公开(公告)号：US20070295356A1

公开(公告)日：2007-12-27

申请号：US11472593

申请日：2006-06-22

申请人： Paul Alejon Fontejon ,  Yunxiao Gao ,  Yinshi Liu ,  Ning Shi

发明人： Paul Alejon Fontejon ,  Yunxiao Gao ,  Yinshi Liu ,  Ning Shi

IPC分类号： B08B6/00 ,  C23F1/00

CPC分类号： C23C14/564 ,  C23C14/021 ,  H01J37/32706 ,  H01J2237/022

摘要： The method and apparatus of the embodiments of the present invention employ an in-situ particle decontamination technique that allows for such decontamination while a wafer is a vacuum tool or deposition chamber, thereby eliminating the need for another device for performing decontamination. This in-situ decontamination is effective for particle contamination resulting, for example, from tool resident mechanical component. Furthermore, particle decontamination is performed in the presence of plasma, having a potential for helping to maximize a “self bias” voltage, under RF conditions, and is integrated into the vacuum process.

摘要翻译： 本发明的实施例的方法和装置采用原位颗粒去污技术，其在晶片是真空工具或沉积室的同时可以进行这种净化，从而消除了对进行去污的其它装置的需要。 这种原位去污对于例如由工具驻留的机械部件产生的颗粒污染是有效的。 此外，在等离子体的存在下进行颗粒净化，其具有在RF条件下有助于最大化“自偏压”电压的潜力，并且被集成到真空过程中。

公开(公告)号：US20070081277A1

公开(公告)日：2007-04-12

申请号：US11244712

申请日：2005-10-06

申请人： Liesl Folks ,  Guohan Hu ,  Yinshi Liu ,  Kenneth Mackay ,  Vladimir Nikitin ,  James Nix ,  Neil Smith

发明人： Liesl Folks ,  Guohan Hu ,  Yinshi Liu ,  Kenneth Mackay ,  Vladimir Nikitin ,  James Nix ,  Neil Smith

IPC分类号： G11B5/127 ,  G11B5/33

CPC分类号： G11B5/11 ,  B82Y25/00 ,  G01R33/093 ,  G11B5/3163 ,  G11B5/3912

摘要： Methods and apparatus provide a magnetic head that includes a magnetoresistive read sensor disposed between a first magnetic shield and a second magnetic shield. The second magnetic shield is configured to reduce effects on the read sensor due to unevenness in a topography of the read sensor.

摘要翻译： 方法和装置提供一种磁头，其包括设置在第一磁屏蔽和第二磁屏蔽之间的磁阻读取传感器。 第二磁屏蔽被配置为由于读取传感器的形状的不均匀性而减小对读取传感器的影响。

公开(公告)号：US06391172B2

公开(公告)日：2002-05-21

申请号：US09139240

申请日：1998-08-25

申请人： Robert S. Cole ,  Mathew S. Cooper ,  Stephen P. Turner ,  Yinshi Liu ,  Michael McCarty ,  Rodney L. Scagline

发明人： Robert S. Cole ,  Mathew S. Cooper ,  Stephen P. Turner ,  Yinshi Liu ,  Michael McCarty ,  Rodney L. Scagline

IPC分类号： C22C1900

CPC分类号： C22C19/07 ,  C22F1/10 ,  C23C14/3414

摘要： A high purity cobalt sputter target is disclosed which contains a face centered cubic (fcc) phase and a hexagonal close packed (hcp) phase, wherein the value of the ratio of X-ray diffraction peak intensity, Ifcc(200)/Ihcp(10 {overscore (1)}1), is smaller than the value of the same ratio in a high purity cobalt material obtained by cooling fcc cobalt to room temperature from the high temperature at which it is molten. High purity cobalt is defined as having an oxygen content of not more than 500 ppm, a Ni content of not more than 200 ppm, contents of Fe, Al and Cr of not more than 50 ppm each, and Na and K of less than 0.5 ppm. The disclosed sputter target is manufactured by subjecting the material to cold-working treatments (less than 422° C.). Annealing the material, at a temperature in the range 300-422° C. for several hours, between cold working treatments significantly increases the amount of cold work which could be imparted into the material. The high purity cobalt is deformed in such a way so as to cause the (0002) hcp plane to be tilted between 10-35° from the target normal. The aforementioned phase proportions and crystallographic texture significantly improves the sputtering efficiency and material utilization.

摘要翻译： 公开了一种高纯度钴溅射靶，其包含面心立方（fcc）相和六方密堆积（hcp）相，其中X射线衍射峰强度Ifcc（200）/ Ihcp（10 {overscore（1）} 1）小于通过从熔融的高温将fcc钴冷却至室温获得的高纯度钴材料的相同比例的值。 高纯度钴被定义为氧含量不大于500ppm，Ni含量不超过200ppm，Fe，Al和Cr含量不大于50ppm，Na和K小于0.5 ppm。 公开的溅射靶是通过对材料进行冷加工处理（小于422℃）来制造的。 在300-422℃的温度范围内将材料退火几个小时，在冷加工处理之间显着地增加可以赋予材料的冷加工量。 高纯度钴以这样的方式变形，以使（0002）hcp平面从目标法线倾斜10-35°。 上述相比例和晶体结构显着提高了溅射效率和材料利用率。

公开(公告)号：US5993621A

公开(公告)日：1999-11-30

申请号：US893892

申请日：1997-07-11

申请人： Yinshi Liu

发明人： Yinshi Liu

IPC分类号： C22C14/00 ,  C22F1/00 ,  C22F1/18 ,  C23C14/34

CPC分类号： C23C14/3414 ,  C22F1/183 ,  Y10T428/12806 ,  Y10T428/31678

摘要： Described is a titanium sputtering target to provide improved step coverage and a method of making same.

摘要翻译： 描述了提供改进的台阶覆盖的钛溅射靶及其制造方法。

公开(公告)号：US08066893B2

公开(公告)日：2011-11-29

申请号：US12343044

申请日：2008-12-23

申请人： Amanda Baer ,  Wen-Chien David Hsiao ,  John I. Kim ,  Yinshi Liu ,  Vladimir Nikitin ,  Trevor W. Olson ,  Hicham Moulay Sougrati ,  Yuan Yao

发明人： Amanda Baer ,  Wen-Chien David Hsiao ,  John I. Kim ,  Yinshi Liu ,  Vladimir Nikitin ,  Trevor W. Olson ,  Hicham Moulay Sougrati ,  Yuan Yao

IPC分类号： B44C1/22 ,  B23P15/00

CPC分类号： G11B5/3163 ,  G11B5/1278 ,  G11B5/3116

摘要： A method for manufacturing a magnetic write head having a stepped, recessed, high magnetic moment pole connected with a write pole. The stepped pole structure helps to channel magnetic flux to the write pole without leaking write field to the magnetic medium. This allows the write head to maintain a high write field strength at very small bit sizes. The method includes depositing a dielectric layer and a first CMP layer over substrate that can include a magnetic shaping layer. A mask is formed over the dielectric layer, the mask having an opening to define the stepped pole structure. The image of the mask is transferred into the dielectric layer. A high magnetic moment material is deposited and a chemical mechanical polishing is performed to planarize the magnetic material and dielectric layer.

摘要翻译： 一种用于制造具有与写入极连接的阶梯式，凹入的高磁矩极的磁性写入头的方法。 阶梯式极点结构有助于将磁通量传递到写入极，而不会将写入场泄漏到磁性介质。 这允许写头在非常小的位尺寸下保持高的写场强度。 该方法包括在可包括磁性成形层的衬底上沉积介电层和第一CMP层。 在电介质层上形成掩模，掩模具有限定阶梯极结构的开口。 掩模的图像被转移到电介质层中。 沉积高磁矩材料并执行化学机械抛光以使磁性材料和电介质层平坦化。

公开(公告)号：US07799138B2

公开(公告)日：2010-09-21

申请号：US11472593

申请日：2006-06-22

申请人： Paul Alejon Fontejon, Jr. ,  Yunxiao Gao ,  Yinshi Liu ,  Ning Shi

发明人： Paul Alejon Fontejon, Jr. ,  Yunxiao Gao ,  Yinshi Liu ,  Ning Shi

IPC分类号： C25F3/30

CPC分类号： C23C14/564 ,  C23C14/021 ,  H01J37/32706 ,  H01J2237/022

摘要： The method and apparatus of the embodiments of the present invention employ an in-situ particle decontamination technique that allows for such decontamination while a wafer is a vacuum tool or deposition chamber, thereby eliminating the need for another device for performing decontamination. This in-situ decontamination is effective for particle contamination resulting, for example, from tool resident mechanical component. Furthermore, particle decontamination is performed in the presence of plasma, having a potential for helping to maximize a “self bias” voltage, under RF conditions, and is integrated into the vacuum process.

摘要翻译： 本发明的实施例的方法和装置采用原位颗粒去污技术，其在晶片是真空工具或沉积室的同时可以进行这种净化，从而消除了对进行去污的其它装置的需要。 这种原位去污对于例如由工具驻留的机械部件产生的颗粒污染是有效的。 此外，在等离子体的存在下进行颗粒净化，其具有在RF条件下有助于最大化“自偏压”电压的潜力，并且被集成到真空过程中。

公开(公告)号：US20090168257A1

公开(公告)日：2009-07-02

申请号：US11966086

申请日：2007-12-28

申请人： Wen-Chien David Hsiao ,  Yinshi Liu ,  Yi Zheng

发明人： Wen-Chien David Hsiao ,  Yinshi Liu ,  Yi Zheng

IPC分类号： G11B5/33

CPC分类号： G11B5/3163 ,  G11B5/1278 ,  G11B5/3116 ,  G11B5/315

摘要： A magnetic write head for perpendicular magnetic recording. The magnetic write head includes a write pole having a pole tip region and a flared region. The write pole also has a trailing, wrap-around magnetic shield that is separated from the sides of the write pole by a non-magnetic side gap layer. The write head is formed such that the side gap spacing is larger in the flared region than in the pole tip region. This varying gap spacing can be formed by depositing a non-magnetic material using a collimated sputter deposition aligned substantially perpendicular to the air bearing surface. This collimated sputtering deposits the non-magnetic material more readily on the sides of the write pole in the flared region than in the pole tip region.

摘要翻译： 用于垂直磁记录的磁写头。 磁写头包括具有极尖区域和扩口区域的写入极。 写极还具有通过非磁性侧间隙层与写入极的两侧分离的后围环绕磁屏蔽。 写头形成为使得扩张区域中的侧间隙间隔大于极尖区域中的间隙间距。 可以通过使用基本垂直于空气轴承表面排列的准直溅射沉积物沉积非磁性材料来形成这种变化的间隙间隔。 这种准直的溅射使非磁性材料更容易地在扩展区域中的写入极的侧面上比在磁极尖端区域中沉积。

公开(公告)号：US07500302B2

公开(公告)日：2009-03-10

申请号：US11104212

申请日：2005-04-11

申请人： Wen-Chien Hsiao ,  Terence Lam ,  Yinshi Liu ,  Michael Yang ,  Samuel Yuan

发明人： Wen-Chien Hsiao ,  Terence Lam ,  Yinshi Liu ,  Michael Yang ,  Samuel Yuan

IPC分类号： G11B5/127 ,  H04R31/00

CPC分类号： G11B5/3116 ,  G11B5/23 ,  G11B5/3163 ,  Y10T29/49032 ,  Y10T29/49043 ,  Y10T29/49044 ,  Y10T29/49046 ,  Y10T29/49048 ,  Y10T29/49052

摘要： Embodiments of the present invention recite a process for fabricating a write gap structure for a magnetic recording head. In one embodiment, at least one layer of inert material is deposited which is disposed proximate to the P2 pole of a magnetic recording head. A layer of magnetic material is deposited which is disposed between the layer of inert material and the P1 pedestal (P1P) of the magnetic recording head. In embodiments of the present invention, a second layer of inert material is deposited which is disposed between the layer of magnetic material and the P1P of the magnetic recording head. In embodiments of the present invention, the throat height of the write gap structure is defined wherein the layer of magnetic material and the inert layer only overlie a portion of the P1 pedestal of the magnetic recording head.

摘要翻译： 本发明的实施例背诵了一种用于制造用于磁记录头的写间隙结构的方法。 在一个实施例中，沉积至少一层惰性材料，其被布置成靠近磁记录头的P2极。 沉积磁性材料层，其设置在惰性材料层与磁记录头的P1基座（P1P）之间。 在本发明的实施例中，沉积第二层惰性材料，该层被设置在磁性材料层和磁记录头的P1P之间。 在本发明的实施例中，限定了写入间隙结构的喉部高度，其中磁性材料层和惰性层仅覆盖在磁记录头的P1基座的一部分上。

公开(公告)号：US20070283557A1

公开(公告)日：2007-12-13

申请号：US11772665

申请日：2007-07-02

申请人： Tsung Chen ,  Yimin Hsu ,  Yinshi Liu

发明人： Tsung Chen ,  Yimin Hsu ,  Yinshi Liu

IPC分类号： G11B5/187

CPC分类号： G11B5/1871 ,  G11B5/1278 ,  G11B5/3116 ,  G11B5/3163 ,  Y10T29/49032 ,  Y10T29/49043 ,  Y10T29/49044 ,  Y10T29/49046 ,  Y10T29/49048 ,  Y10T29/49052

摘要： A method of fabricating a single-pole perpendicular magnetic recording head to contain a bevel angle promotion layer that facilitates the fabrication of the bevel angle in a trapezoidal main pole. The bevel angle promotion layer is made of a non-magnetic material that is softer than the material (e.g., Al2O3) that normally underlies the main pole. In one embodiment, the bevel angle promotion layer is formed between an end of the yoke and the air bearing surface (ABS), with the top surface of the bevel angle promotion layer being substantially coplanar wit the top surface of the yoke. In other embodiment the bevel angle promotion layer is integrated with a leading edge taper material, which is formed of a magnetic material, to broaden the magnetic flux path between the yoke and the main pole.

摘要翻译： 一种制造单极垂直磁记录头的方法，其包含有助于在梯形主极中制造斜角的斜角促进层。 斜角促进层由比通常位于主极下方的材料（例如，Al 2 O 3 O 3）更柔软的非磁性材料制成。 在一个实施例中，斜角促进层形成在轭的端部和空气支承表面（ABS）之间，斜角促进层的顶表面基本上与轭的顶表面共面。 在其他实施例中，斜角促进层与由磁性材料形成的前缘锥形材料整合，以扩大轭和主极之间的磁通路径。

公开(公告)号：US07248431B1

公开(公告)日：2007-07-24

申请号：US10837350

申请日：2004-04-30

申请人： Yinshi Liu ,  Benjamin Chen ,  Kyusik Sin ,  Hongping Yuan

发明人： Yinshi Liu ,  Benjamin Chen ,  Kyusik Sin ,  Hongping Yuan

IPC分类号： G11B5/127 ,  G11B5/187 ,  G11B5/147

CPC分类号： G11B5/3116 ,  G11B5/1278 ,  G11B5/235 ,  G11B5/3163 ,  Y10T29/49039 ,  Y10T29/49043 ,  Y10T29/49052

摘要： A method of fabricating a write head for perpendicular recording is provided. The write head has a pole, a shield in proximity to the pole, and a gap between the pole and the shield. The method includes forming a pole layer on an undercoat layer, forming a mask over at least a portion of the pole layer, and forming the pole by removing material from the pole layer. The pole has a top surface, a first side, and a second side. The method further includes forming a first gap portion of the gap along the first side and along the second side of the pole, forming a protective layer over at least a portion of the first gap portion, removing the mask, and removing the protective layer. The method further includes forming a second gap portion of the gap over at least the top surface of the pole and forming the shield over at least the second gap portion.

摘要翻译： 提供一种制造用于垂直记录的写入头的方法。 写头具有极，靠近极的屏蔽，以及极与屏蔽之间的间隙。 该方法包括在底涂层上形成极层，在极层的至少一部分上形成掩模，并通过从极层去除材料形成极。 极具有顶表面，第一侧和第二侧。 该方法还包括沿着第一侧沿着极的第二侧形成间隙的第一间隙部分，在第一间隙部分的至少一部分上形成保护层，去除掩模，以及去除保护层。 所述方法还包括在至少所述极的顶表面上形成所述间隙的第二间隙部分，并在至少所述第二间隙部分上形成所述屏蔽。