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44 条记录 (耗时 0.029 秒)

    Method for manufacturing a thin film transistor using poly silicon
    31.
    发明申请
    Method for manufacturing a thin film transistor using poly silicon 有权
    使用多晶硅制造薄膜晶体管的方法

    公开(公告)号：US20050130357A1

    公开(公告)日：2005-06-16

    申请号：US10499090

    申请日：2002-01-29

    申请人： Jean-Ho Song ,  Joon-Hoo Choi ,  Beom-Rak Choi ,  Myung-Koo Kang ,  Sook-Young Kang

    发明人： Jean-Ho Song ,  Joon-Hoo Choi ,  Beom-Rak Choi ,  Myung-Koo Kang ,  Sook-Young Kang

    IPC分类号： G02F1/1368 ,  H01L21/20 ,  H01L21/208 ,  H01L21/3065 ,  H01L21/336 ,  H01L29/786

    CPC分类号： H01L29/66757 ,  H01L29/78675

    摘要： A manufacturing method of a thin film transistor. An amorphous silicon thin film is formed on an insulating substrate, and is crystallized by a lateral solidification process with illumination of laser beams into the amorphous silicon thin film to form a polysilicon thin film. Next, protrusion portions protruding from the surface of the polysilicon thin film are removed by plasma dry-etching using a gas mixture including Cl2, SF6 and Ar at the ratio of 3:1:2 to smooth the surface of the polysilicon thin film, and the semiconductor layer is formed by patterning the polysilicon thin film. A gate insulating film covering the semiconductor layer is formed and a gate electrode is formed on the gate insulating film opposite the semiconductor layer. A source region and a drain region opposite each other with respect to the gate electrode are formed by implanting impurities into I the semiconductor layer and a source electrode and drain electrode are forined to be electrically connected to the source region and drain region.

    摘要翻译： 薄膜晶体管的制造方法。 在绝缘基板上形成非晶硅薄膜，并通过横向固化工艺使激光束照射到非晶硅薄膜中而形成多晶硅薄膜而结晶。 接下来，通过使用包含Cl 2，SF 6和Ar的气体混合物的等离子体干蚀刻来除去从多晶硅薄膜的表面突出的突出部分， 3：1：2以平滑多晶硅薄膜的表面，并且通过图案化多晶硅薄膜形成半导体层。 形成覆盖半导体层的栅极绝缘膜，并且在与半导体层相对的栅极绝缘膜上形成栅电极。 通过将杂质注入到半导体层中而形成源极区域和相对于栅极电极相对的漏极区域，源极和漏极电极被电连接到源极区域和漏极区域。

    Device for irradiating a laser beam
    35.
    发明申请
    Device for irradiating a laser beam 有权
    用于照射激光束的装置

    公开(公告)号：US20080070386A1

    公开(公告)日：2008-03-20

    申请号：US11983103

    申请日：2007-11-06

    申请人： Hyun-Jae Kim ,  Myung-Koo Kang

    发明人： Hyun-Jae Kim ,  Myung-Koo Kang

    IPC分类号： H01L21/20

    CPC分类号： H01L27/1285 ,  B23K26/02 ,  B23K26/066 ,  H01L21/02532 ,  H01L21/0268 ,  H01L27/1296 ,  H01L29/66757 ,  H01L29/78675

    摘要： A device for irradiating a laser beam onto an amorphous silicon thin film formed on a substrate. The device includes: a stage mounting the substrate; a laser oscillator for generating a laser beam; a projection lens for focusing and guiding the laser beam onto the thin film; a reflector for reflecting the laser beam guided onto the thin film; a controller for controlling a position of the reflector; and an absorber for absorbing the laser beam reflected by the reflector.

    摘要翻译： 用于将激光束照射到形成在基板上的非晶硅薄膜上的装置。 该装置包括：安装基板的台架; 用于产生激光束的激光振荡器; 用于将激光束聚焦并引导到薄膜上的投影透镜; 用于反射引导到薄膜上的激光束的反射器; 用于控制所述反射器的位置的控制器; 以及用于吸收由反射器反射的激光束的吸收体。

    Array substrate, method of manufacturing the same and method of crystallizing silicon
    36.
    发明申请
    Array substrate, method of manufacturing the same and method of crystallizing silicon 有权
    阵列基板，其制造方法和硅结晶方法

    公开(公告)号：US20070026549A1

    公开(公告)日：2007-02-01

    申请号：US11386630

    申请日：2006-03-22

    申请人： Soong-Yong Joo ,  Myung-Koo Kang

    发明人： Soong-Yong Joo ,  Myung-Koo Kang

    IPC分类号： H01L21/00

    CPC分类号： H01L27/1285 ,  H01L21/0242 ,  H01L21/02422 ,  H01L21/02532 ,  H01L21/0268 ,  H01L21/02691 ,  H01L27/1296 ,  H01L29/04 ,  H01L29/66757

    摘要： An array substrate includes a base substrate, a switching element, and a pixel electrode. The switching element is on the base substrate. The switching element includes a poly silicon pattern having at least one block. Grains are formed in each of the at least one block that are extended in a plurality of directions. The pixel electrode is electrically connected to the switching element. Therefore, current mobility and design margin of the switching element are improved.

    摘要翻译： 阵列基板包括基底基板，开关元件和像素电极。 开关元件在基底基板上。 开关元件包括具有至少一个块的多晶硅图案。 在沿多个方向延伸的至少一个块中的每一个中形成谷粒。 像素电极电连接到开关元件。 因此，提高了开关元件的电流移动性和设计余量。

    Display device and method of driving the same
    37.
    发明申请
    Display device and method of driving the same 审中-公开
    显示装置及其驱动方法

    公开(公告)号：US20060176263A1

    公开(公告)日：2006-08-10

    申请号：US11256449

    申请日：2005-10-20

    申请人： Myung-Koo Kang ,  Lintao Zhang ,  Jung-Sun Lee ,  Jong-Hwa Park

    发明人： Myung-Koo Kang ,  Lintao Zhang ,  Jung-Sun Lee ,  Jong-Hwa Park

    IPC分类号： G09G3/36

    CPC分类号： G09G3/3677 ,  G09G3/3685 ,  G09G2300/0408 ,  G09G2330/026 ,  G09G2330/12

    摘要： A display device includes a data driver, an inverter, a display panel, and an intercept unit. The data driver provides an image signal and the scan driver generates a control signal corresponding to the image signal. The inverter provides an inverted control signal. The display panel has a PMOS transistor that provides the image signal to a pixel electrode based on the inverted control signal. The interception unit intercepts an abnormal signal that is forwarded to the PMOS transistor. Therefore, a signal having an abnormal voltage level may be interrupted to prevent display defects resulting from the abnormal voltage level.

    摘要翻译： 显示装置包括数据驱动器，逆变器，显示面板和截距单元。 数据驱动器提供图像信号，扫描驱动器产生对应于图像信号的控制信号。 逆变器提供反相控制信号。 显示面板具有PMOS晶体管，其基于反相控制信号将图像信号提供给像素电极。 拦截单元拦截转发到PMOS晶体管的异常信号。 因此，可能中断具有异常电压电平的信号，以防止由异常电压电平引起的显示缺陷。

    Array substrate, method of manufacturing the same and method of crystallizing silicon
    40.
    发明授权
    Array substrate, method of manufacturing the same and method of crystallizing silicon 有权
    阵列基板，其制造方法和硅结晶方法

    公开(公告)号：US07405464B2

    公开(公告)日：2008-07-29

    申请号：US11386630

    申请日：2006-03-22

    申请人： Soong-Yong Joo ,  Myung-Koo Kang

    发明人： Soong-Yong Joo ,  Myung-Koo Kang

    IPC分类号： H01L29/00

    CPC分类号： H01L27/1285 ,  H01L21/0242 ,  H01L21/02422 ,  H01L21/02532 ,  H01L21/0268 ,  H01L21/02691 ,  H01L27/1296 ,  H01L29/04 ,  H01L29/66757

    摘要： An array substrate includes a base substrate, a switching element, and a pixel electrode. The switching element is on the base substrate. The switching element includes a poly silicon pattern having at least one block. Grains are formed in each of the at least one block that are extended in a plurality of directions. The pixel electrode is electrically connected to the switching element. Therefore, current mobility and design margin of the switching element are improved.

    摘要翻译： 阵列基板包括基底基板，开关元件和像素电极。 开关元件在基底基板上。 开关元件包括具有至少一个块的多晶硅图案。 在沿多个方向延伸的至少一个块中的每一个中形成谷粒。 像素电极电连接到开关元件。 因此，提高了开关元件的电流移动性和设计余量。