公开(公告)号：US20210246016A1

公开(公告)日：2021-08-12

申请号：US17150527

申请日：2021-01-15

Applicant: Infineon Technologies AG

Inventor： Stephan Pindl ,  Carsten Ahrens ,  Stefan Jost ,  Ulrich Krumbein ,  Matthias Reinwald

IPC: B81B7/00 ,  B81C1/00 ,  G01N29/24 ,  G01N33/00

Abstract: An infrared emitter with a glass lid for emitting infrared radiation comprises a package enclosing a cavity, wherein a first part is transparent for infrared radiation and a second part comprises a glass material and a heating structure configured for emitting the infrared radiation, wherein the heating structure is arranged in the cavity between the first part and the second part of the package.

公开(公告)号：US20210066495A1

公开(公告)日：2021-03-04

申请号：US17004187

申请日：2020-08-27

Applicant: Infineon Technologies AG

Inventor： Edward Fuergut ,  Philipp Sebastian Koch ,  Stephan Pindl ,  Hans-Joachim Schulze

IPC: H01L29/78 ,  H01L29/16 ,  H01L29/66 ,  H01L29/423

Abstract: A power semiconductor device includes a semiconductor body having a front side surface, and a first passivation layer arranged above the front side surface. The first passivation layer is a polycrystalline diamond layer.

公开(公告)号：US20200066845A1

公开(公告)日：2020-02-27

申请号：US16548144

申请日：2019-08-22

Applicant: Infineon Technologies AG

Inventor： Christoph Glacer ,  Stephan Pindl ,  Werner Weber ,  Sebastian Wittmann

IPC: H01L29/16 ,  H01L23/532

Abstract: In accordance with an embodiment, a method for producing a graphene-based sensor includes providing a carrier substrate; forming a carrier structure on the carrier substrate, wherein one or more separating structures are formed on an upper side of the carrier structure; and performing a wet chemical transfer of a graphene layer onto the upper side of the carrier structure that comprises the separating structures, where the separating structures and a tear strength of the graphene layer are matched to one another such that the graphene layer respectively tears at the separating structures during the wet chemical transfer.

公开(公告)号：US10546752B2

公开(公告)日：2020-01-28

申请号：US16227761

申请日：2018-12-20

Applicant: Infineon Technologies AG

Inventor： Stephan Pindl ,  Daniel Lugauer ,  Dominic Maier ,  Alfons Dehe

IPC: H01L21/306 ,  H01L21/20 ,  H01L21/18 ,  H01L33/00 ,  H01L21/762 ,  H01L23/31 ,  H01L23/057 ,  H01L23/053 ,  G01N27/12 ,  H01L23/29 ,  H01L23/00 ,  H01L21/02 ,  H01L21/302 ,  G01N27/02 ,  G01N33/00 ,  H01L21/56 ,  H01L23/538 ,  H05K1/18

Abstract: According to an embodiment, a sensor package includes an electrically insulating substrate including a cavity in the electrically insulating substrate, an ambient sensor, an integrated circuit die embedded in the electrically insulating substrate, and a plurality of conductive interconnect structures coupling the ambient sensor to the integrated circuit die. The ambient sensor is supported by the electrically insulating substrate and arranged adjacent the cavity.

公开(公告)号：US10384934B2

公开(公告)日：2019-08-20

申请号：US15923599

申请日：2018-03-16

Applicant: Infineon Technologies AG

Inventor： Alfons Dehe ,  Stephan Pindl ,  Bernhard Knott ,  Carsten Ahrens

IPC: B81C1/00 ,  H04R19/00 ,  H04R19/04 ,  H04R31/00

Abstract: A method for manufacturing a MEMS device is disclosed. Moreover a MEMS device and a module including a MEMS device are disclosed. An embodiment includes a method for manufacturing MEMS devices includes forming a MEMS stack over a first main surface of a substrate, forming a polymer layer over a second main surface of the substrate and forming a first opening in the polymer layer and the substrate such that the first opening abuts the MEMS stack.

公开(公告)号：US20180146512A1

公开(公告)日：2018-05-24

申请号：US15818835

申请日：2017-11-21

Applicant: Infineon Technologies AG

Inventor： Stephan Pindl ,  Daniel Porwol ,  Johann Strasser

IPC: H05B3/00 ,  G02B5/20 ,  G02B5/26 ,  G01N21/17

Abstract: A method for producing an infrared emitter arrangement is provided. The method includes providing a carrier. The carrier includes at least one infrared emitter structure at a first side of the carrier and at least one cutout at a second side of the carrier, said second side being situated opposite the first side of the carrier, wherein the at least one cutout extends from the second side of the carrier in the direction of the at least one infrared emitter structure. The method further includes securing an infrared filter layer structure at the second side of the carrier in such a way that the at least one cutout separates the at least one infrared emitter structure from the infrared filter layer structure.

公开(公告)号：US09503823B2

公开(公告)日：2016-11-22

申请号：US14582223

申请日：2014-12-24

Applicant: Infineon Technologies AG

Inventor： Stefan Barzen ,  Andre Brockmeier ,  Marc Fueldner ,  Stephan Pindl ,  Wolfgang Friza

IPC: H04R9/08 ,  H04R23/00

CPC classification number: H04R19/016

Abstract: A capacitive microphone may include a housing, a membrane, and a first backplate, wherein a first insulating layer may be disposed on a first side of the first backplate facing the membrane and a second insulating layer may be disposed on a second side of the first backplate opposite to the first side of the first backplate. A further insulating layer may be disposed on a side wall of at least one of a plurality of perforation holes in the first backplate. Each conductive surface of the first backplate may be covered with insulating material.

Abstract translation: 电容麦克风可以包括壳体，膜和第一背板，其中第一绝缘层可以设置在第一背板的面向膜的第一侧上，并且第二绝缘层可以设置在第一绝缘层的第二侧上 背板与第一背板的第一侧相对。 另外的绝缘层可以设置在第一背板中的多个穿孔中的至少一个的侧壁上。 第一背板的每个导电表面可以用绝缘材料覆盖。