公开(公告)号：US09047940B2

公开(公告)日：2015-06-02

申请号：US13738524

申请日：2013-01-10

Applicant: Intermolecular Inc. ,  Kabushiki Kaisha Toshiba ,  SanDisk 3D LLC

Inventor： Federico Nardi ,  Yun Wang

IPC: G11C11/00 ,  G11C13/00 ,  H01L45/00 ,  H01L27/24

CPC classification number: G11C13/0007 ,  G11C13/0069 ,  G11C2013/0083 ,  G11C2213/12 ,  G11C2213/15 ,  G11C2213/52 ,  G11C2213/71 ,  H01L27/2463 ,  H01L27/2481 ,  H01L45/06 ,  H01L45/08 ,  H01L45/085 ,  H01L45/1233 ,  H01L45/145 ,  H01L45/146 ,  H01L45/147 ,  H01L45/149

Abstract: Provided are resistive random access memory (ReRAM) cells forming arrays and methods of operating such cells and arrays. The ReRAM cells of the same array may have the same structure, such as have the same bottom electrodes, top electrodes, and resistive switching layers. Yet, these cells may be operated in a different manner. For example, some ReRAM cells may be restively switched using lower switching voltages than other cells. The cells may also have different data retention characteristics. These differences may be achieved by using different forming operations for different cells or, more specifically, flowing forming currents in different directions for different cells. The resulting conductive paths formed within the resistive switching layers are believed to switch at or near different electrode interfaces, i.e., within a so called switching zone. In some embodiments, a switching zone of a ReRAM cell may be changed even after the initial formation.

Abstract translation: 提供形成阵列的电阻随机存取存储器（ReRAM）单元和操作这样的单元和阵列的方法。 相同阵列的ReRAM单元可以具有相同的结构，例如具有相同的底部电极，顶部电极和电阻式开关层。 然而，这些电池可以以不同的方式操作。 例如，可以使用比其他单元更低的开关电压来重新切换一些ReRAM单元。 细胞也可能具有不同的数据保留特征。 这些差异可以通过对于不同的单元使用不同的成形操作来实现，或者更具体地，针对不同的单元流动形成不同方向的电流。 形成在电阻开关层内的所得导电路径被认为在不同的电极接口处，即在所谓的开关区域内或附近切换。 在一些实施例中，即使在初始形成之后，ReRAM单元的切换区也可能改变。

公开(公告)号：US09040413B2

公开(公告)日：2015-05-26

申请号：US13714162

申请日：2012-12-13

Applicant: Intermolecular Inc. ,  Kabushiki Kaisha Toshiba ,  SanDisk 3D LLC

Inventor： Randall J. Higuchi ,  Chien-Lan Hsueh ,  Yun Wang

IPC: H01L21/44 ,  H01L45/00 ,  H01L27/24

CPC classification number: H01L45/1608 ,  H01L27/2409 ,  H01L27/2463 ,  H01L45/08 ,  H01L45/10 ,  H01L45/1233 ,  H01L45/145 ,  H01L45/146 ,  H01L45/1616

Abstract: A nonvolatile memory device contains a resistive switching memory element with improved device switching performance and lifetime by custom tailoring the average concentration of defects in the resistive switching film and methods of forming the same. The nonvolatile memory element includes a first electrode layer, a second electrode layer, and a resistive switching layer disposed between the first electrode layer and the second electrode layer. The resistive switching layer comprises a first sub-layer and a second sub-layer, wherein the first sub-layer has more defects than the first sub-layer. A method includes forming a first sub-layer on the first electrode layer by a first ALD process and forming a second sub-layer on the first sub-layer by a second ALD process, where the first sub-layer has a different amount of defects than the second sub-layer.

Abstract translation: 非易失性存储器件包含电阻式开关存储器元件，通过定制电阻式开关膜中的平均缺陷浓度及其形成方法，具有改进的器件切换性能和寿命。 非易失性存储元件包括设置在第一电极层和第二电极层之间的第一电极层，第二电极层和电阻开关层。 电阻开关层包括第一子层和第二子层，其中第一子层具有比第一子层更多的缺陷。 一种方法包括通过第一ALD工艺在第一电极层上形成第一子层，并通过第二ALD工艺在第一子层上形成第二子层，其中第一子层具有不同的缺陷量 比第二个子层。

公开(公告)号：US09018068B2

公开(公告)日：2015-04-28

申请号：US13869800

申请日：2013-04-24

Applicant: Intermolecular Inc.

Inventor： Randall J. Higuchi ,  Chien-Lan Hsueh ,  Yun Wang

IPC: H01L45/00 ,  H01L27/24 ,  H01L21/02

CPC classification number: H01L27/2463 ,  H01L21/0228 ,  H01L45/04 ,  H01L45/1233 ,  H01L45/145 ,  H01L45/1616

Abstract: A nonvolatile resistive memory element includes a novel switching layer and methods of forming the same. The switching layer includes a material having bistable resistance properties and formed by bonding silicon to oxygen or nitrogen. The switching layer may include at least one of SiOx, SiOxNy, or SiNx. Advantageously, the SiOx, SiOxNy, and SiNx generally remain amorphous after thermal anneal processes are used to form the devices, such as ReRAM devices.

Abstract translation: 非易失性电阻性存储元件包括新型开关层及其形成方法。 开关层包括具有双稳电阻性质并通过将硅键合到氧或氮而形成的材料。 开关层可以包括SiO x，SiO x N y或SiN x中的至少一种。 有利地，在使用热退火工艺来形成诸如ReRAM器件的器件之后，SiO x，SiO x N y和SiN x通常保持非晶态。

公开(公告)号：US09006023B2

公开(公告)日：2015-04-14

申请号：US14492363

申请日：2014-09-22

Applicant: Intermolecular Inc.

Inventor： Yun Wang ,  Imran Hashim

IPC: H01L29/02 ,  H01L45/00

CPC classification number: H01L45/146 ,  H01L27/2463 ,  H01L27/2481 ,  H01L45/08 ,  H01L45/12 ,  H01L45/1233 ,  H01L45/1253 ,  H01L45/145 ,  H01L45/147 ,  H01L45/16 ,  H01L45/1608 ,  H01L45/1616 ,  H01L45/1625

Abstract: Provided are resistive random access memory (ReRAM) cells having diffusion barrier layers formed from various materials, such as beryllium oxide or titanium silicon nitrides. Resistive switching layers used in ReRAM cells often need to have at least one inert interface such that substantially no materials pass through this interface. The other (reactive) interface may be used to introduce and remove defects from the resistive switching layers causing the switching. While some electrode materials, such as platinum and doped polysilicon, may form inert interfaces, these materials are often difficult to integrate. To expand electrode material options, a diffusion barrier layer is disposed between an electrode and a resistive switching layer and forms the inert interface with the resistive switching layer. In some embodiments, tantalum nitride and titanium nitride may be used for electrodes separated by such diffusion barrier layers.

Abstract translation: 提供了具有由各种材料形成的扩散阻挡层的电阻随机存取存储器（ReRAM）单元，例如氧化铍或钛硅氮化物。 在ReRAM单元中使用的电阻开关层通常需要具有至少一个惰性界面，使得基本上没有材料通过该界面。 另一个（反应式）接口可用于引入和去除导致切换的电阻式开关层的缺陷。 虽然一些电极材料（例如铂和掺杂多晶硅）可能形成惰性界面，但是这些材料通常难以整合。 为了扩大电极材料选择，扩散阻挡层设置在电极和电阻开关层之间，并与电阻式开关层形成惰性界面。 在一些实施例中，氮化钽和氮化钛可用于由这种扩散阻挡层分开的电极。

公开(公告)号：US08913418B2

公开(公告)日：2014-12-16

申请号：US13891472

申请日：2013-05-10

Applicant: Intermolecular Inc. ,  Kabushiki Kaisha Toshiba ,  SanDisk 3D LLC

Inventor： Yun Wang ,  Vidyut Gopal ,  Chien-Lan Hsueh

IPC: H01L45/00 ,  G11C13/00

CPC classification number: H01L45/10 ,  G11C13/0002 ,  G11C13/0007 ,  G11C2213/15 ,  G11C2213/51 ,  G11C2213/56 ,  G11C2213/71 ,  G11C2213/77 ,  H01L45/08 ,  H01L45/1253 ,  H01L45/1266 ,  H01L45/145 ,  H01L45/146 ,  H01L45/1616 ,  H01L45/1625 ,  H01L45/1641

Abstract: Provided are resistive random access memory (ReRAM) cells and methods of fabricating thereof. A stack including a defect source layer, a defect blocking layer, and a defect acceptor layer disposed between the defect source layer and the defect blocking layer may be subjected to annealing. During the annealing, defects are transferred in a controllable manner from the defect source layer to the defect acceptor layer. At the same time, the defects are not transferred into the defect blocking layer thereby creating a lowest concentration zone within the defect acceptor layer. This zone is responsible for resistive switching. The precise control over the size of the zone and the defect concentration within the zone allows substantially improvement of resistive switching characteristics of the ReRAM cell. In some embodiments, the defect source layer includes aluminum oxynitride, the defect blocking layer includes titanium nitride, and the defect acceptor layer includes aluminum oxide.

Abstract translation: 提供了电阻随机存取存储器（ReRAM）单元及其制造方法。 可以对包括缺陷源层，缺陷阻挡层和设置在缺陷源层和缺陷阻挡层之间的缺陷受主层的堆叠进行退火。 在退火过程中，缺陷以可控方式从缺陷源层转移到缺陷受体层。 同时，缺陷不会转移到缺陷阻挡层中，从而在缺陷受体层内形成最低浓度区。 该区域负责电阻交换。 精确控制区域的尺寸和区域内的缺陷浓度允许ReRAM单元的电阻开关特性得到显着改善。 在一些实施例中，缺陷源层包括氮氧化铝，缺陷阻挡层包括氮化钛，缺陷受主层包括氧化铝。

公开(公告)号：US08866118B2

公开(公告)日：2014-10-21

申请号：US13724126

申请日：2012-12-21

Applicant: Intermolecular Inc. ,  Kabushiki Kaisha Toshiba ,  SanDisk 3D LLC

Inventor： Federico Nardi ,  Yun Wang

IPC: H01L29/02 ,  H01L45/00

CPC classification number: H01L45/06 ,  H01L27/2409 ,  H01L27/2436 ,  H01L27/2463 ,  H01L45/065 ,  H01L45/08 ,  H01L45/10 ,  H01L45/1233 ,  H01L45/1253 ,  H01L45/141 ,  H01L45/145 ,  H01L45/146 ,  H01L45/147 ,  H01L45/148 ,  H01L45/16 ,  H01L45/1616 ,  H01L51/0098

Abstract: A nonvolatile memory device contains a resistive switching memory element with improved device switching performance and life and methods for forming the same. The nonvolatile memory device has a first layer on a substrate, a resistive switching layer on the first layer, and a second layer. The resistive switching layer is disposed between the first layer and the second layer and the resistive switching layer comprises a material having the same morphology as the top surface of the first layer. A method of forming a nonvolatile memory element in a ReRAM device includes forming a resistive switching layer on a first layer and forming a second layer, so that the resistive switching layer is disposed between the first layer and the second layer. The resistive switching layer comprises a material formed with the same morphology as the top surface of the first layer.

公开(公告)号：US08852996B2

公开(公告)日：2014-10-07

申请号：US13721587

申请日：2012-12-20

Applicant: Intermolecular Inc. ,  Kabushiki Kaisha Toshiba ,  SanDisk 3D LLC

Inventor： Yun Wang ,  Tony P. Chiang ,  Tim Minvielle ,  Takeshi Yamaguchi

IPC: H01L29/02 ,  H01L45/00

CPC classification number: H01L45/1633 ,  H01L27/2481 ,  H01L45/08 ,  H01L45/1233 ,  H01L45/146 ,  H01L45/1616 ,  H01L45/1641

Abstract: Provided are carbon doped resistive switching layers, resistive random access memory (ReRAM) cells including these layers, as well as methods of forming thereof. Carbon doping of metal containing materials creates defects in these materials that allow forming and breaking conductive paths as evidenced by resistive switching. Relative to many conventional dopants, carbon has a lower diffusivity in many suitable base materials. As such, these carbon doped materials exhibit structural stability and consistent resistive switching over many operating cycles. Resistive switching layers may include as much as 30 atomic percent of carbon, making the dopant control relatively simple and flexible. Furthermore, carbon doping has acceptor characteristics resulting in a high resistivity and low switching currents, which are very desirable for ReRAM applications. Carbon doped metal containing layer may be formed from metalorganic precursors at temperatures below saturation ranges of atomic layer deposition.

Abstract translation: 提供碳掺杂电阻开关层，包括这些层的电阻随机存取存储器（ReRAM）单元以及其形成方法。 含金属材料的碳掺杂在这些材料中产生缺陷，允许形成和断开导电路径，如电阻式开关所证明的。 相对于许多常规掺杂剂，碳在许多合适的基材中具有较低的扩散系数。 因此，这些碳掺杂材料在许多操作循环中表现出结构稳定性和一致的电阻切换。 电阻开关层可以包括多达30原子％的碳，使得掺杂剂控制相对简单和灵活。 此外，碳掺杂具有导致高电阻率和低开关电流的受体特性，这对于ReRAM应用是非常需要的。 含碳掺杂金属的层可以在低于原子层沉积的饱和范围的温度下由金属有机前体形成。

公开(公告)号：US20140175367A1

公开(公告)日：2014-06-26

申请号：US13722569

申请日：2012-12-20

Applicant: INTERMOLECULAR INC. ,  KABUSHIKI KAISHA TOSHIBA ,  SANDISK 3D LLC

Inventor： Mihir Tendulkar ,  Vidyut Gopal ,  Imran Hashim ,  Tim Minvielle ,  Yun Wang ,  Takeshi Yamaguchi

IPC: H01L45/00

CPC classification number: H01L45/1616 ,  H01L27/2463 ,  H01L27/2481 ,  H01L45/08 ,  H01L45/1233 ,  H01L45/145 ,  H01L45/146

Abstract: Provided are resistive random access memory (ReRAM) cells that include thin resistive switching layers. In some embodiments, the resistive switching layers have a thickness of less than about 50 Angstroms and even less than about 30 Angstroms. The resistive switching characteristics of such thin layers are maintained by controlling their compositions and using particular fabrication techniques. Specifically, low oxygen vacancy metal oxides, such as tantalum oxide, may be used. The concentration of oxygen vacancies may be less than 5 atomic percent. In some embodiments, the resistive switching layers also include nitrogen and. For example, compositions of some specific resistive switching layers may be represented by Ta2O5-XNY, where Y

Abstract translation: 提供了包括薄电阻开关层的电阻随机存取存储器（ReRAM）单元。 在一些实施例中，电阻式开关层的厚度小于约50埃，甚至小于约30埃。 通过控制它们的组成和使用特定的制造技术来维持这种薄层的电阻开关特性。 具体地，可以使用氧化钽等低氧空位金属氧化物。 氧空位的浓度可以小于5原子％。 在一些实施例中，电阻式开关层还包括氮和。 例如，一些特定电阻开关层的组成可以由Ta 2 O 5-X N Y表示，其中Y <（X-0.01）。 电阻开关层可以使用原子层沉积（ALD）形成。

公开(公告)号：US20140175362A1

公开(公告)日：2014-06-26

申请号：US13721450

申请日：2012-12-20

Applicant: Intermolecular Inc. ,  Kabushiki Kaisha Toshiba ,  SanDisk 3D LLC

Inventor： Mihir Tendulkar ,  Imran Hashim ,  Tim Minvielle ,  Yun Wang ,  Takeshi Yamaguchi

IPC: H01L45/00

CPC classification number: H01L45/1253 ,  H01L27/2463 ,  H01L45/08 ,  H01L45/146 ,  H01L45/1616 ,  H01L45/1625

Abstract: Provided are ReRAM cells, each having at least one interface between an electrode and a resistive switching layers with a maximum field value of less than 0.25. The electrode materials forming such interfaces include tantalum nitrides doped with lanthanum, aluminum, erbium yttrium, or terbium (e.g., TaX(Dopant)YN, where X is at least about 0.95). The electrode materials have low work functions (e.g., less than about 4.5 eV). At the same time, the resistive switching materials have high relative dielectric permittivities (e.g., greater than about 30) and high electron affinities (greater than about for 3.5 eV). Niobium oxide is one example of a suitable resistive switching material. Another electrode interfacing the resistive switching layer may have different characteristics and, in some embodiments, may be an inert electrode.

Abstract translation: 提供的是ReRAM单元，每个单元在电极和电阻切换层之间具有至少一个界面，其最大场值小于0.25。 形成这种界面的电极材料包括掺杂有镧，铝，铒钇或铽的钽氮化物（例如TaX（掺杂剂）YN，其中X为至少约0.95）。 电极材料具有低功函数（例如小于约4.5eV）。 同时，电阻式开关材料具有较高的相对介电常数（例如大于约30）和高电子亲和力（大于3.5eV）。 氧化铌是合适的电阻式开关材料的一个例子。 连接电阻式开关层的另一电极可以具有不同的特性，并且在一些实施例中可以是惰性电极。

公开(公告)号：US08735217B2

公开(公告)日：2014-05-27

申请号：US14017942

申请日：2013-09-04

Applicant: Intermolecular Inc. ,  Kabushiki Kaisha Toshiba ,  SanDisk 3D LLC

Inventor： Hieu Pham ,  Vidyut Gopal ,  Imran Hashim ,  Tim Minvielle ,  Dipankar Pramanik ,  Yun Wang ,  Takeshi Yamaguchi ,  Hong Sheng Yang

IPC: H01L29/02

CPC classification number: C23C14/345 ,  C23C14/0042 ,  C23C14/0641 ,  C23C14/083 ,  C23C14/225 ,  H01L27/2409 ,  H01L27/2463 ,  H01L45/08 ,  H01L45/12 ,  H01L45/1233 ,  H01L45/1266 ,  H01L45/145 ,  H01L45/146 ,  H01L45/16 ,  H01L45/1608 ,  H01L45/1616 ,  H01L45/1625

Abstract: A nonvolatile memory element is disclosed comprising a first electrode, a near-stoichiometric metal oxide memory layer having bistable resistance, and a second electrode in contact with the near-stoichiometric metal oxide memory layer. At least one electrode is a resistive electrode comprising a sub-stoichiometric transition metal nitride or oxynitride, and has a resistivity between 0.1 and 10 Ωcm. The resistive electrode provides the functionality of an embedded current-limiting resistor and also serves as a source and sink of oxygen vacancies for setting and resetting the resistance state of the metal oxide layer. Novel fabrication methods for the second electrode are also disclosed.