公开(公告)号：US09059269B2

公开(公告)日：2015-06-16

申请号：US13738532

申请日：2013-01-10

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： Alan B. Botula ,  Alvin J. Joseph ,  James A. Slinkman ,  Randy L. Wolf

IPC: H01L21/339 ,  H01L23/48 ,  H01L27/12 ,  H01L29/78 ,  H01L29/66

CPC classification number: H01L23/34 ,  H01L21/84 ,  H01L23/3677 ,  H01L27/1203 ,  H01L29/665 ,  H01L29/78 ,  H01L29/7841 ,  H01L2924/0002 ,  H01L2924/00

Abstract: An approach for sinking heat from a transistor is provided. A method includes forming a substrate contact extending from a first portion of a silicon-on-insulator (SOI) island to a substrate. The method also includes forming a transistor in a second portion of the SOI island. The method further includes electrically isolating the substrate contact from the transistor by doping the first portion of the SOI island.

Abstract translation: 提供了一种从晶体管吸收热量的方法。 一种方法包括形成从绝缘体上硅（SOI）岛的第一部分延伸到衬底的衬底接触。 该方法还包括在SOI岛的第二部分中形成晶体管。 该方法还包括通过掺杂SOI岛的第一部分来将衬底接触与晶体管电隔离。

公开(公告)号：US08951896B2

公开(公告)日：2015-02-10

申请号：US13929955

申请日：2013-06-28

Applicant: International Business Machines Corporation

Inventor： Alan B. Botula ,  Jeffrey E. Hanrahan ,  Mark D. Jaffe ,  Alvin J. Joseph ,  Dale W. Martin ,  Gerd Pfeiffer ,  James A. Slinkman

IPC: H01L21/30 ,  H01L21/46 ,  H01L21/04

CPC classification number: H01L21/76251 ,  H01L21/04 ,  H01L21/265 ,  H01L21/26506 ,  H01L21/324

Abstract: According to a method herein, a first side of a substrate is implanted with a first material to change a crystalline structure of the first side of the substrate from a first crystalline state to a second crystalline state, after the first material is implanted. A second material is deposited on the first side of the substrate, after the first material is implanted. A first side of an insulator layer is bonded to the second material on the first side of the substrate. Integrated circuit devices are formed on a second side of the insulator layer, opposite the first side of the insulator layer, after the insulator layer is bonded to the second material. The integrated circuit devices are thermally annealed. The first material maintains the second crystalline state of the first side of the substrate during the annealing.

公开(公告)号：US20150001622A1

公开(公告)日：2015-01-01

申请号：US13929256

申请日：2013-06-27

Applicant: International Business Machines Corporation

Inventor： Michel J. Abou-Khalil ,  Alan B. Botula ,  Mark D. Jaffe ,  Alvin J. Joseph ,  James A. Slinkman

IPC: H01L29/786 ,  H01L21/28

CPC classification number: H01L29/78654 ,  H01L21/28123 ,  H01L21/84 ,  H01L29/66613

Abstract: An integrated recessed thin body field effect transistor (FET) and methods of manufacture are disclosed. The method includes recessing a portion of a semiconductor material. The method further includes forming at least one gate structure within the recessed portion of the semiconductor material.

Abstract translation: 公开了集成的凹陷薄体场效应晶体管（FET）及其制造方法。 该方法包括使半导体材料的一部分凹陷。 该方法还包括在半导体材料的凹陷部分内形成至少一个栅极结构。