公开(公告)号：US10056290B2

公开(公告)日：2018-08-21

申请号：US15198827

申请日：2016-06-30

申请人： International Business Machines Corporation

发明人： Sean D. Burns ,  Lawrence A. Clevenger ,  Nelson M. Felix ,  Sivananda K. Kanakasabapathy ,  Christopher J. Penny ,  Nicole Saulnier

IPC分类号： H01L21/4763 ,  H01L23/48 ,  H01L23/52 ,  H01L21/768 ,  H01L23/528 ,  H01L23/522

CPC分类号： H01L21/76816 ,  H01L21/76877 ,  H01L23/5226 ,  H01L23/528

摘要： A method of forming a self-aligned pattern of vias in a semiconductor device comprises forming a first layer of mandrels, then forming a second layer of mandrels orthogonal to the first layer of mandrels. The layout of the first and second layers of mandrels defines a pattern that can be used to create vias in a semiconductor material. Other embodiments are also described.

公开(公告)号：US20230058218A1

公开(公告)日：2023-02-23

申请号：US17407519

申请日：2021-08-20

申请人： International Business Machines Corporation

发明人： Injo Ok ,  Nicole Saulnier ,  Muthumanickam Sankarapandian ,  Andrew Herbert Simon ,  Steven Michael McDermott ,  Iqbal Rashid Saraf

IPC分类号： H01L45/00

摘要： A phase change memory (PCM) cell includes an electrode, a heater electrically connected to the electrode, a PCM material electrically connected to the heater, a second electrode electrically connected to the PCM material, an electrical insulator surrounding the PCM material, and a shield positioned between the PCM material and the electrical insulator, the shield comprising a reactive-ion-etching-resistant material.

公开(公告)号：US20220407005A1

公开(公告)日：2022-12-22

申请号：US17353098

申请日：2021-06-21

申请人： International Business Machines Corporation

发明人： Injo Ok ,  Nicole Saulnier ,  Kevin W. Brew ,  Steven Michael McDermott ,  Lawrence A. Clevenger ,  Hari Prasad Amanapu ,  ADRA CARR ,  PRASAD BHOSALE

IPC分类号： H01L45/00

摘要： A method for forming a phase-change memory cell includes depositing a metal layer over a wafer such that the metal layer covers connection structures of the wafer. The method further includes removing a portion of the metal layer such that the connection structures of the wafer remain covered by a remaining portion of the metal layer. The method further includes forming a phase-change memory stack on a stack area of the remaining portion of the metal layer. The method further includes removing the remaining portion of the metal layer except in the stack area.

公开(公告)号：US11476418B2

公开(公告)日：2022-10-18

申请号：US17114605

申请日：2020-12-08

申请人： INTERNATIONAL BUSINESS MACHINES CORPORATION

发明人： Injo Ok ,  Ruqiang Bao ,  Andrew Herbert Simon ,  Kevin W. Brew ,  Nicole Saulnier ,  Iqbal Rashid Saraf ,  Prasad Bhosale

IPC分类号： H01L45/00

摘要： A semiconductor structure may include a heater surrounded by a second dielectric layer, a projection liner on top of the second dielectric layer, and a phase change material layer above the projection liner. A top surface of the projection liner may be substantially flush with a top surface of the heater. The projection liner may separate the phase change material layer from the second dielectric layer. The projection liner may provide a parallel conduction path in the crystalline phase and the amorphous phase of the phase change material layer. The semiconductor structure may include a bottom electrode below and in electrical contact with the heater and a top electrode above and in electrical contact with the phase change material layer.

公开(公告)号：US11283015B2

公开(公告)日：2022-03-22

申请号：US16828328

申请日：2020-03-24

申请人： INTERNATIONAL BUSINESS MACHINES CORPORATION

发明人： Timothy Mathew Philip ,  Nicole Saulnier ,  Lawrence A. Clevenger

IPC分类号： H01L45/00

摘要： A method of forming a phase change memory device is provided. The method includes forming a spacer layer on a substrate, and forming a heater terminal contact in the spacer layer. The method further includes forming a liner layer on the heater terminal contact and the spacer layer, and forming a heater terminal in electrical contact with the heater terminal contact in the liner layer. The method further includes forming a conductive projection segment on the heater terminal. The method further includes forming a phase change material layer on the conductive projection segment, and forming a phase change material terminal on the phase change material layer, wherein an electrical current can pass between the heater terminal and the phase change material terminal through the phase change material layer.

公开(公告)号：US11227793B2

公开(公告)日：2022-01-18

申请号：US15967705

申请日：2018-05-01

申请人： International Business Machines Corporation

发明人： Sean D. Burns ,  Lawrence A. Clevenger ,  Nelson M. Felix ,  Sivananda K. Kanakasabapathy ,  Christopher J. Penny ,  Nicole Saulnier

IPC分类号： H01L23/48 ,  H01L23/52 ,  H01L21/44 ,  H01L21/48 ,  H01L21/768 ,  H01L23/528 ,  H01L23/522

摘要： A method of forming a self-aligned pattern of vias in a semiconductor device comprises forming a first layer of mandrels, then forming a second layer of mandrels orthogonal to the first layer of mandrels. The layout of the first and second layers of mandrels defines a pattern that can be used to create vias in a semiconductor material. Other embodiments are also described.

公开(公告)号：US20210305503A1

公开(公告)日：2021-09-30

申请号：US16828328

申请日：2020-03-24

申请人： INTERNATIONAL BUSINESS MACHINES CORPORATION

发明人： Timothy Mathew Philip ,  Nicole Saulnier ,  Lawrence A. Clevenger

IPC分类号： H01L45/00

摘要： A method of forming a phase change memory device is provided. The method includes forming a spacer layer on a substrate, and forming a heater terminal contact in the spacer layer. The method further includes forming a liner layer on the heater terminal contact and the spacer layer, and forming a heater terminal in electrical contact with the heater terminal contact in the liner layer. The method further includes forming a conductive projection segment on the heater terminal. The method further includes forming a phase change material layer on the conductive projection segment, and forming a phase change material terminal on the phase change material layer, wherein an electrical current can pass between the heater terminal and the phase change material terminal through the phase change material layer.

公开(公告)号：US10937961B2

公开(公告)日：2021-03-02

申请号：US16182293

申请日：2018-11-06

申请人： International Business Machines Corporation

发明人： Injo Ok ,  Myung-Hee Na ,  Nicole Saulnier ,  Balasubramanian Pranatharthiharan

IPC分类号： H01L45/00 ,  H01L27/24

摘要： A Phase-change-memory (PCM) cell and method of forming the PCM are provided. In an illustrative embodiment, a method of forming a PCM cell includes forming a first layer of a first germanium-antimony-tellurium (GST) type material over at least a portion of the bottom and sides of a pore through a dielectric layer of low dielectric material to a bottom electrode. The method also includes forming a second layer of a second GST type material over the first GST type material along the bottom and sides of the pore over the bottom electrode. The first GST type material is different from the second GST type material.

公开(公告)号：US20200266100A1

公开(公告)日：2020-08-20

申请号：US16277528

申请日：2019-02-15

申请人： International Business Machines Corporation

发明人： Nicole Saulnier ,  Indira Seshadri ,  Lawrence A. Clevenger ,  Leigh Anne H. Clevenger ,  Gauri Karve ,  Fee Li Lie ,  Isabel Cristina Chu ,  Hosadurga Shobha ,  Ekmini A. De Silva

IPC分类号： H01L21/768 ,  H01L21/311

摘要： Techniques to improve CD width and depth uniformity between features with different layout densities are provided. In one aspect, a method of forming a contact structure includes: patterning features in different regions of a dielectric at different layout densities whereby, due to etch loading effects, the features are patterned to different depths in the dielectric and have different bottom dimensions; depositing a sacrificial spacer into/lining the features whereby some of the features are pinched-off by the sacrificial spacer; opening up the sacrificial spacer at bottoms of one or more of the features that are not pinched-off by the sacrificial spacer; selectively extending the one or more features in the dielectric, such that the one or more features have a discontinuous taper with a stepped sidewall profile; removing the sacrificial spacer; and filling the features with a conductive material to form the contact structure. A contact structure is also provided.

公开(公告)号：US20200136043A1

公开(公告)日：2020-04-30

申请号：US16172643

申请日：2018-10-26

申请人： International Business Machines Corporation

发明人： Injo OK ,  Myung-Hee Na ,  Nicole Saulnier ,  Balasubramanian Pranatharthiharan

IPC分类号： H01L45/00 ,  H01L27/24

摘要： A self-align metal contact for a phase control memory (PCM) element is provided that mitigates unwanted residual tantalum nitride (TaN) particles that would otherwise remain after patterning a TaN surface using an RIE process.