公开(公告)号：US20250003757A1

公开(公告)日：2025-01-02

申请号：US18342879

申请日：2023-06-28

Applicant: International Business Machines Corporation

Inventor： Michael S. Gordon ,  Mattias Fitzpatrick ,  Brian Paul Gaucher ,  Kevin W. Brew

IPC: G01C21/34

Abstract: According to one embodiment, a method, computer system, and computer program product for selective GPS navigation is provided. The embodiment may include determining a type of a vehicle operated by a user. The embodiment may also include, in response to determining a segment of a navigational route being traversed by the vehicle prohibits the type or is obstructed, presenting a notification to the user of the prohibition or the obstruction through a graphical user interface associated with a device dictating the navigational route. The embodiment may further include calculating a reroute that avoids the prohibition and/or the obstruction. The embodiment may also include presenting the reroute to the user.

公开(公告)号：US20240237544A1

公开(公告)日：2024-07-11

申请号：US18150816

申请日：2023-01-06

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： Kevin W. Brew ,  Ching-Tzu Chen ,  Timothy Mathew Philip ,  JIN PING HAN ,  Injo Ok

IPC: H10N50/10 ,  H01L23/528 ,  H10N50/01

CPC classification number: H10N50/10 ,  H01L23/5283 ,  H10N50/01

Abstract: Embodiments of present invention provide a vertical magnetic tunnel junction (MTJ) structure. The structure includes an L-shaped MTJ stack including an L-shaped reference layer conformally on an L-shaped performance enhancing layer; an L-shaped tunnel barrier layer conformally on the L-shaped reference layer; and an L-shaped free layer conformally on the L-shaped tunnel barrier layer, where a vertical portion of the L-shaped MTJ stack is adjacent to a sidewall of a metal stud, the metal stud being directly on top of a metal wire in a dielectric layer. The structure further includes a first and a second electrode contacting a horizontal portion and a vertical portion of the L-shaped MTJ stack. A method of forming the same is also provided.

公开(公告)号：US12002753B2

公开(公告)日：2024-06-04

申请号：US17545260

申请日：2021-12-08

Applicant: International Business Machines Corporation

Inventor： Kevin W. Brew ,  Lan Yu ,  Ruilong Xie ,  Kangguo Cheng

IPC: H01L23/525

CPC classification number: H01L23/5256

Abstract: A semiconductor structure includes a first electrode; a second electrode; a dielectric material between the first electrode and the second electrode, the dielectric material having at least one wall extending from the first electrode to the second electrode to define a void within the dielectric material and between the first electrode and the second electrode; and a layer of phase change material on the at least one wall of the dielectric material and in contact with the first electrode and the second electrode.

公开(公告)号：US20240074336A1

公开(公告)日：2024-02-29

申请号：US17894549

申请日：2022-08-24

Applicant: International Business Machines Corporation

Inventor： Injo Ok ,  Timothy Mathew Philip ,  Jin Ping Han ,  Ching-Tzu Chen ,  Kevin W. Brew ,  Lili Cheng

IPC: H01L45/00

CPC classification number: H01L45/126 ,  H01L45/06 ,  H01L45/1233 ,  H01L45/1675

Abstract: A memory device and method of forming a projection liner under a mushroom phase change memory device with sidewall electrode process scheme to provide self-aligned patterning of resistive projection liner during sidewall electrode formation.

公开(公告)号：US20230200265A1

公开(公告)日：2023-06-22

申请号：US17552429

申请日：2021-12-16

Applicant: International Business Machines Corporation

Inventor： Kevin W. Brew ,  Injo Ok ,  Sanjay C. Mehta ,  Matthew T. Shoudy ,  Nicole Saulnier ,  Iqbal Rashid Saraf

IPC: H01L45/00 ,  H01L27/24

CPC classification number: H01L45/06 ,  H01L45/145 ,  H01L45/1675 ,  H01L45/1691 ,  H01L45/1253 ,  H01L45/1608 ,  H01L45/1683 ,  H01L27/2463

Abstract: A phase change memory structure including a bottom electrode; a top electrode; a first phase change material between the bottom electrode and the top electrode; a first dielectric surrounding the first phase change material; a second dielectric surrounding the top electrode, the second dielectric having selective adhesion to a metal as compared to the first phase change material; a first metal feature contacting the bottom electrode; and a second metal feature contacting the top electrode.

公开(公告)号：US11610941B2

公开(公告)日：2023-03-21

申请号：US17104169

申请日：2020-11-25

Applicant: International Business Machines Corporation

Inventor： Kevin W. Brew ,  Takashi Ando ,  Michael Rizzolo ,  Lawrence A. Clevenger

IPC: H01L27/24 ,  H01L27/11507 ,  H01L27/22

Abstract: A non-volatile memory cell includes a thin film resistor (TFR) in series and between a top state influencing electrode and a top wire. The TFR limits or generally reduces the electrical current at the top state influencing electrode from the top wire. As such, non-volatile memory cell endurance may be improved and adverse impacts to component(s) that neighbor the non-volatile memory cell may be limited. The TFR is additionally utilized as an etch stop when forming a top wire trench associated with the fabrication of the top wire. In some non-volatile memory cells where cell symmetry is desired, an additional TFR may be formed between a bottom wire and a bottom state influencing electrode.

公开(公告)号：US11271151B2

公开(公告)日：2022-03-08

申请号：US16438906

申请日：2019-06-12

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： Injo Ok ,  Balasubramanian Pranatharthiharan ,  Kevin W. Brew ,  Wei Wang

IPC: H01L45/00 ,  G11C13/00

Abstract: A method is presented for reducing a reset current for a phase change memory (PCM). The method includes forming a bottom electrode, constructing a PCM cell structure including a plurality of phase change memory layers and a plurality of heat transfer layers, wherein the plurality of phase change memory layers are assembled in an alternating configuration with respect to the plurality of heat transfer layers, and forming a top electrode over the PCM cell structure. The plurality of phase change memory layers are arranged perpendicular to the top and bottom electrodes. Additionally, airgaps are defined adjacent the PCM cell structure.

公开(公告)号：US20210135104A1

公开(公告)日：2021-05-06

申请号：US16671748

申请日：2019-11-01

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： Injo Ok ,  Kevin W. Brew ,  Timothy M. Philip ,  Muthumanickam Sankarapandian ,  Sanjay C. Mehta ,  Nicole Saulnier ,  Steven M. Mcdermott

IPC: H01L45/00 ,  G11C13/00

Abstract: A phase change material memory device is provided. The phase change material memory device includes one or more electrical contacts in a substrate, and a dielectric cover layer on the electrical contacts and substrate. The phase change material memory device further includes a lower conductive shell in a trench above one of the one or more electrical contacts, and an upper conductive shell on the lower conductive shell in the trench. The phase change material memory device further includes a conductive plug filling the upper conductive shell. The phase change material memory device further includes a liner layer on the dielectric cover layer and conductive plug, and a phase change material block on the liner layer on the dielectric cover layer and in the trench.

公开(公告)号：US10953329B2

公开(公告)日：2021-03-23

申请号：US16575514

申请日：2019-09-19

Applicant: International Business Machines Corporation

Inventor： James R. Kozloski ,  Michael S. Gordon ,  Ryan T. Gordon ,  Kevin W. Brew ,  Clifford A. Pickover

IPC: A63F13/00 ,  A63F13/52 ,  A63F13/30 ,  A63F13/216 ,  G06F3/01 ,  G06F16/9537 ,  A63F13/795 ,  A63F13/25 ,  A63F13/65 ,  A63F13/217

Abstract: A cohort associated with a user is identified. A virtual object is generated according to the cohort. An augmented reality setting of a location is generated in relation to the user. A context of the location is determined. The virtual object is modified in the augmented reality setting according to the context and the cohort.

公开(公告)号：US20200009459A1

公开(公告)日：2020-01-09

申请号：US16575514

申请日：2019-09-19

Applicant: International Business Machines Corporation

Inventor： James R. Kozloski ,  Michael S. Gordon ,  Ryan T. Gordon ,  Kevin W. Brew ,  Clifford A. Pickover

IPC: A63F13/52 ,  A63F13/30 ,  A63F13/216 ,  G06F3/01 ,  G06F16/9537

Abstract: A cohort associated with a user is identified. A virtual object is generated according to the cohort. An augmented reality setting of a location is generated in relation to the user. A context of the location is determined. The virtual object is modified in the augmented reality setting according to the context and the cohort.