公开(公告)号：US08466811B2

公开(公告)日：2013-06-18

申请号：US12845199

申请日：2010-07-28

Applicant: Sang Seung Kang ,  Jae Hong Kim ,  Chan Kyu Park ,  Cheon Shu Park ,  Dae Ha Lee ,  Min Su Jang ,  Hyeon Sung Cho ,  Joo Chan Sohn ,  Jae Yeon Lee ,  Yun Koo Chung

Inventor： Sang Seung Kang ,  Jae Hong Kim ,  Chan Kyu Park ,  Cheon Shu Park ,  Dae Ha Lee ,  Min Su Jang ,  Hyeon Sung Cho ,  Joo Chan Sohn ,  Jae Yeon Lee ,  Yun Koo Chung

IPC: H03K17/94

CPC classification number: G06F3/014

Abstract: Provided are a thimble-type intermediation device and a method for recognizing a finger gesture using the same. The thimble-type intermediation device includes: a motion sensing unit sensing a motion of a user's finger and generating the sensed result as motion data; a tactile sensing block sensing a tactile behavior of the user's finger and generating the sensed result as tactile data; a control unit recognizing the gesture and tactile behavior of the user's finger on the basis of the generated motion data and tactile data, and outputting the recognition result as recognition result information; and a wireless communication unit transmitting the recognition result information to a robot system.

Abstract translation: 提供了一种套管式中介装置和使用该中空装置识别手指手势的方法。 套筒式中介装置包括：运动感测单元，感测用户手指的运动并产生感测结果作为运动数据; 感测感测块，感测用户手指的触觉行为，并产生感测结果作为触觉数据; 基于生成的运动数据和触觉数据识别用户手指的手势和触觉行为，并输出识别结果作为识别结果信息的控制单元; 以及将识别结果信息发送到机器人系统的无线通信单元。

公开(公告)号：US08336166B2

公开(公告)日：2012-12-25

申请号：US12663208

申请日：2007-06-12

Applicant: Jae Hong Kim

Inventor： Jae Hong Kim

IPC: E05F5/02

CPC classification number: E05F5/006 ,  E05F5/08 ,  E05F5/10 ,  E05Y2201/21 ,  E05Y2201/212 ,  E05Y2201/256 ,  E05Y2201/264 ,  E05Y2900/20 ,  Y10T16/61 ,  Y10T16/615 ,  Y10T16/625

Abstract: A hinge damper is configured to be adhered to a door hinge of the furniture having a door to attenuate impact and is designed in a small size but to attenuate a large amount of impact. In the hinge damper, first and second seals are formed in an oil seal to prevent air from being introduced. A cross rib is formed on a piston to absorb a larger amount of impact with a small size. The hinge damper can be sized as small as a size of a screw used for fixing the hinge.

Abstract translation: 铰链阻尼器构造成粘附到具有门的家具的门铰链上以减弱冲击，并且设计成小尺寸，但是可以减少大量的冲击。 在铰链阻尼器中，第一和第二密封件形成在油封中以防止空气被引入。 在活塞上形成横肋，以较小的尺寸吸收较大量的冲击。 铰链阻尼器的尺寸可以小到用于固定铰链的螺钉的尺寸。

公开(公告)号：US08278218B2

公开(公告)日：2012-10-02

申请号：US13241415

申请日：2011-09-23

Applicant: Joon Seok Oh ,  Seung Jin Yeom ,  Baek Mann Kim ,  Dong Ha Jung ,  Jeong Tae Kim ,  Nam Yeal Lee ,  Jae Hong Kim

Inventor： Joon Seok Oh ,  Seung Jin Yeom ,  Baek Mann Kim ,  Dong Ha Jung ,  Jeong Tae Kim ,  Nam Yeal Lee ,  Jae Hong Kim

IPC: H01L21/44

CPC classification number: H01L21/76846 ,  H01L21/76856 ,  H01L23/53238 ,  H01L2924/0002 ,  H01L2924/00

Abstract: An electrical conductor having a multilayer diffusion barrier of use in a resultant semiconductor device is presented. The electrical conductor line includes an insulation layer, a diffusion barrier, and a metal line. The insulation layer is formed on a semiconductor substrate and having a metal line forming region. The diffusion barrier is formed on a surface of the metal line forming region of the insulation layer and has a multi-layered structure made of TaN layer, an MoxOy layer and an Mo layer. The metal line is formed on the diffusion barrier to fill the metal line forming region of the insulation layer.

Abstract translation: 本发明提供了一种在所得半导体器件中使用的具有多层扩散阻挡层的电导体。 电导体线包括绝缘层，扩散阻挡层和金属线。 绝缘层形成在半导体衬底上并具有金属线形成区域。 扩散阻挡层形成在绝缘层的金属线形成区域的表面上，具有由TaN层，MoxOy层和Mo层构成的多层结构。 金属线形成在扩散阻挡层上以填充绝缘层的金属线形成区域。

公开(公告)号：US08239747B2

公开(公告)日：2012-08-07

申请号：US12216744

申请日：2008-07-10

Applicant: Kyoung Lae Cho ,  Jae Hong Kim ,  Yoon Dong Park ,  Jun Jin Kong ,  Dong Hyuk Chae

Inventor： Kyoung Lae Cho ,  Jae Hong Kim ,  Yoon Dong Park ,  Jun Jin Kong ,  Dong Hyuk Chae

IPC: G06F11/00

CPC classification number: G06F11/1072 ,  H03M13/09 ,  H03M13/15 ,  H03M13/1515 ,  H03M13/152

Abstract: Example embodiments may provide a memory device and memory data reading method. The memory device according to example embodiments may include a multi-bit cell array, an error detector which may read a first data page from a memory page in the multi-bit cell array and may detect an error-bit of the first data page, and an estimator which may identify a multi-bit cell where the error-bit is stored and may estimate data stored in the identified multi-bit cell among data of a second data page. Therefore, the memory device and memory data reading method may have an effect of reducing an error when reading data stored in the multi-bit cell and monitoring a state of the multi-bit cell without additional overhead.

Abstract translation: 示例性实施例可以提供存储器件和存储器数据读取方法。 根据示例实施例的存储器件可以包括多位单元阵列，错误检测器，其可以从多位单元阵列中的存储器页读取第一数据页，并且可以检测第一数据页的错误位， 以及估计器，其可以识别存储错误位的多位单元，并且可以估计存储在所识别的多位单元中的数据在第二数据页的数据中。 因此，存储器件和存储器数据读取方法可以具有当读取存储在多位单元中的数据并且监视多位单元的状态而没有额外开销时减小误差的效果。

公开(公告)号：US08085599B2

公开(公告)日：2011-12-27

申请号：US12801505

申请日：2010-06-11

Applicant: Kyoung Lae Cho ,  Seung-Hwan Song ,  Yoon Dong Park ,  Jun Jin Kong ,  Jae Hong Kim

Inventor： Kyoung Lae Cho ,  Seung-Hwan Song ,  Yoon Dong Park ,  Jun Jin Kong ,  Jae Hong Kim

IPC: G11C11/34

CPC classification number: G11C11/5628 ,  G11C16/32 ,  G11C16/349 ,  G11C29/00 ,  G11C2211/5634

Abstract: Memory devices and/or methods that may estimate characteristics of multi-bit cell are provided. A memory device may include: a multi-bit cell array; a monitoring unit to extract a threshold voltage change over time value for reference threshold voltage states selected from a plurality of threshold voltage states corresponding to data stored in the multi-bit cell array; and an estimation unit to estimate a threshold voltage change over time values for the plurality of threshold voltage states based on the extracted threshold voltage change. Through this, it is possible to monitor a change over time of threshold voltages of a memory cell.

Abstract translation: 提供了可以估计多位单元特性的存储器件和/或方法。 存储器设备可以包括：多位单元阵列; 监测单元，用于提取从对应于存储在多位单元阵列中的数据的多个阈值电压状态中选择的参考阈值电压状态的时间值的阈值电压变化; 以及估计单元，用于基于所提取的阈值电压变化来估计所述多个阈值电压状态的时间值的阈值电压变化。 由此，可以监视存储单元的阈值电压随时间的变化。

公开(公告)号：US08059467B2

公开(公告)日：2011-11-15

申请号：US12382351

申请日：2009-03-13

Applicant: Jae Hong Kim ,  Kyoung Lae Cho ,  Yong June Kim ,  Dong Hyuk Chae

Inventor： Jae Hong Kim ,  Kyoung Lae Cho ,  Yong June Kim ,  Dong Hyuk Chae

IPC: G11C11/34 ,  G11C16/04

CPC classification number: G11C16/10 ,  G11C11/5628 ,  G11C2211/5621

Abstract: Memory devices and/or memory programming methods are provided. A memory device may include: a memory cell array including a plurality of memory cells; a programming unit configured to apply a plurality of pulses corresponding to a program voltage to a gate terminal of each of the plurality of memory cells, and to apply a program condition voltage to a bit line connected with a memory cell having a threshold voltage lower than a verification voltage from among the plurality of memory cells; and a control unit configured to increase the program voltage during a first time interval by a first increment for each pulse, and to increase the program voltage during a second time interval by a second increment for each pulse. Through this, it may be possible to reduce a width of a distribution of threshold voltages of a memory cell.

Abstract translation: 提供存储器件和/或存储器编程方法。 存储器件可以包括：包括多个存储器单元的存储单元阵列; 编程单元，被配置为将与编程电压相对应的多个脉冲施加到所述多个存储单元中的每一个的栅极端子，并且将编程状态电压施加到与具有低于阈值电压的阈值电压的存储单元连接的位线 来自所述多个存储单元中的验证电压; 以及控制单元，被配置为在每个脉冲的第一时间间隔期间增加编程电压的第一增量，并且在第二时间间隔期间增加每个脉冲的第二增量的编程电压。 由此，可以减小存储单元的阈值电压分布的宽度。

公开(公告)号：US07981781B2

公开(公告)日：2011-07-19

申请号：US12471801

申请日：2009-05-26

Applicant: Joon Seok Oh ,  Seung Jin Yeom ,  Jae Hong Kim

Inventor： Joon Seok Oh ,  Seung Jin Yeom ,  Jae Hong Kim

IPC: H01L21/44 ,  H01L21/425 ,  H01L21/4763

CPC classification number: H01L21/76846 ,  H01L21/76856 ,  H01L21/76873 ,  Y10T428/26 ,  Y10T428/31678

Abstract: A metal line of a semiconductor device includes an insulation layer formed on a semiconductor substrate. The insulation layer has a metal line forming region. A diffusion barrier is formed on a surface of the metal line forming region of the insulation layer. The diffusion barrier includes a stack structure including an MoxSiyNz layer and an Mo layer. A metal layer is formed on the diffusion barrier to fill the metal line forming region of the insulation layer.

Abstract translation: 半导体器件的金属线包括形成在半导体衬底上的绝缘层。 绝缘层具有金属线形成区域。 在绝缘层的金属线形成区域的表面上形成扩散阻挡层。 扩散阻挡层包括具有MoxSiyNz层和Mo层的堆叠结构。 在扩散阻挡层上形成金属层以填充绝缘层的金属线形成区域。

公开(公告)号：US07934377B2

公开(公告)日：2011-05-03

申请号：US11977650

申请日：2007-10-25

Applicant: Dong Soo Kim ,  Jae Hoon Lee ,  Chun Seung Lee ,  Jae Hong Kim ,  Joong Seon Joh ,  Eun Tae Jeung

Inventor： Dong Soo Kim ,  Jae Hoon Lee ,  Chun Seung Lee ,  Jae Hong Kim ,  Joong Seon Joh ,  Eun Tae Jeung

IPC: F16D31/02

CPC classification number: E02F9/2207 ,  E02F9/2285 ,  E02F9/2292 ,  F15B21/008 ,  F15B21/087 ,  F15B2211/20538 ,  F15B2211/20592 ,  F15B2211/3144 ,  F15B2211/329 ,  F15B2211/36 ,  F15B2211/6054 ,  F15B2211/6313 ,  F15B2211/6316 ,  F15B2211/6346 ,  F15B2211/7053 ,  F15B2211/8616

Abstract: An apparatus for easing an impact on a boom of an excavator and a method of controlling the same are disclosed, which can minimize the vibration occurring in the boom due to the impact on a boom cylinder by actively controlling an amount of hydraulic fluid being supplied to the boom cylinder when the operation of the boom cylinder is suddenly stopped due to an operator's sudden manipulation of an operation lever for a working device. The apparatus includes first and second hydraulic pumps; a boom cylinder; a main control valve; an operation lever for supplying pilot signal pressure to a spool of the main control valve when an operator manipulates the operation lever; operation lever detection means for detecting boom up and boom down signal pressures according to an amount of manipulation of the operation lever; boom cylinder pressure detection means for detecting pressures generated in a large chamber and a small chamber of the boom cylinder; a controller for calculating and outputting a control signal of the main control valve if the boom cylinder has been suddenly stopped; and boom vibration preventing means for controlling the pilot signal pressure being supplied from the second hydraulic pump to the main control valve.

Abstract translation: 公开了一种用于减轻对挖掘机的起重臂的冲击的装置及其控制方法，其可以通过主动地控制供给至动臂的液压流体的量来最小化由于对动臂缸的冲击而引起的动臂中产生的振动 当操作者突然操作用于工作装置的操作杆时，动臂缸的操作突然停止时的动臂缸。 该装置包括第一和第二液压泵; 动臂缸; 主控阀; 操作杆，用于当操作者操作操作杆时，将主控信号压力提供给主控制阀的阀芯; 操作杆检测装置，用于根据操作杆的操纵量检测吊杆上升和吊杆下降信号压力; 用于检测在动臂缸的大室和小室中产生的压力的动臂缸压力检测装置; 控制器，用于如果动臂缸突然停止则计算和输出主控制阀的控制信号; 以及用于控制从第二液压泵供给至主控制阀的先导信号压力的起重臂振动防止装置。

公开(公告)号：US07929346B2

公开(公告)日：2011-04-19

申请号：US12216745

申请日：2008-07-10

Applicant: Dong Hun Yu ,  Kyoung Lae Cho ,  Dong Hyuk Chae ,  Jun Jin Kong ,  Jae Hong Kim ,  Seung-Hwan Song

Inventor： Dong Hun Yu ,  Kyoung Lae Cho ,  Dong Hyuk Chae ,  Jun Jin Kong ,  Jae Hong Kim ,  Seung-Hwan Song

IPC: G11C16/06 ,  G11C16/34 ,  G11C16/26

CPC classification number: G11C7/1006 ,  G11C7/14 ,  G11C11/5642 ,  G11C29/00 ,  G11C29/028 ,  G11C29/42 ,  G11C29/50 ,  G11C2211/5634

Abstract: Example embodiments may relate to a method and an apparatus for reading data stored in a memory, for example, providing a method and an apparatus for controlling a reference voltage based on an error of the stored data. Example embodiments may provide a memory data detecting apparatus including a first voltage comparator to compare a threshold voltage of a memory cell with a first reference voltage, a first data determiner to determine a value of at least one data bit stored in the memory cell according to a result of the comparison, an error verifier to verify whether an error occurs in the determined value, a reference voltage determiner to determine a second reference voltage that is lower than the first reference voltage based on a result of the verification, and a second data determiner to re-determine the value of the data based on the determined second reference voltage.

Abstract translation: 示例性实施例可以涉及用于读取存储在存储器中的数据的方法和装置，例如提供一种基于存储的数据的错误来控制参考电压的方法和装置。 示例性实施例可以提供一种存储器数据检测装置，其包括用于将存储器单元的阈值电压与第一参考电压进行比较的第一电压比较器，第一数据确定器，用于根据存储器单元存储的至少一个数据位的值，根据 比较结果，用于验证所确定的值是否发生错误验证器，基于验证结果确定低于第一参考电压的第二参考电压的参考电压确定器，以及第二数据 确定器，以基于所确定的第二参考电压重新确定数据的值。

公开(公告)号：US07831881B2

公开(公告)日：2010-11-09

申请号：US12230832

申请日：2008-09-05

Applicant: Heeseok Eun ,  Jae Hong Kim ,  Jun Jin Kong

Inventor： Heeseok Eun ,  Jae Hong Kim ,  Jun Jin Kong

IPC: H04L1/00

CPC classification number: G11C29/52 ,  G11C11/5642 ,  G11C29/00 ,  G11C2029/0411 ,  G11C2211/5634

Abstract: The data detecting apparatus may provide a voltage comparison unit that compares a reference voltage, associated with a specific data bit from among a plurality of data bits stored in a memory cell, with a threshold voltage in the memory cell, a detection unit that detects a value of the specific data bit based on a result of the voltage comparison unit, and a decision unit that decides whether the specific data bit is successfully detected based on whether an error occurs in the detected data. The detection unit may re-detect a value of the specific data bit based on detection information with respect to at least one of an upper data bit and a lower data bit in relation to the specific data bit, in response to a result of the decision unit.

Abstract translation: 数据检测装置可以提供电压比较单元，其将存储在存储单元中的多个数据位中的与特定数据位相关联的参考电压与存储单元中的阈值电压进行比较，检测单元检测 基于电压比较单元的结果的特定数据位的值，以及判定单元，其基于检测到的数据中是否发生错误来判定是否成功检测到特定数据位。 响应于决定的结果，检测单元可以基于关于特定数据比特的上位数据位和下位数据位中的至少一个的检测信息重新检测特定数据位的值 单元。