公开(公告)号：US20180286890A1

公开(公告)日：2018-10-04

申请号：US15923026

申请日：2018-03-16

Applicant: Japan Display Inc.

Inventor： Isao Suzumura ,  Yohei Yamaguchi ,  Hajime Watakabe ,  Akihiro Hanada ,  Hirokazu Watanabe ,  Marina Shiokawa

IPC: H01L27/12 ,  H01L29/786 ,  H01L29/49 ,  H01L21/02 ,  H01L21/465 ,  H01L21/4763 ,  H01L29/66

Abstract: The purpose of the invention is to improve reliability of the TFT of the oxide semiconductor. The invention is characterized as follows. A display device comprising: a substrate including a display area where plural pixels are formed, the pixel includes a first TFT of a first oxide semiconductor; a first gate insulating film is formed on the first oxide semiconductor, a gate electrode is formed on the first gate insulating film, an interlayer insulating film is formed over the gate electrode; the gate insulating film includes a first silicon oxide film, the gate electrode includes a first gate layer made of a second oxide semiconductor and a second gate layer made of metal or alloy; the interlayer insulating film has a first interlayer insulating film including a second silicon oxide film, and a second interlayer insulating film including a first aluminum oxide film on the first interlayer insulating film.

公开(公告)号：US20160027921A1

公开(公告)日：2016-01-28

申请号：US14804395

申请日：2015-07-21

Applicant: Japan Display Inc.

Inventor： Hidekazu MIYAKE ,  Arichika Ishida ,  Norihiro Uemura ,  Hiroto Miyake ,  Isao Suzumura ,  Yohei Yamaguchi

IPC: H01L29/786 ,  H01L29/24 ,  G02F1/1368 ,  H01L27/12

CPC classification number: H01L29/7869 ,  G02F1/1368 ,  G02F2001/13685 ,  G02F2202/104 ,  H01L27/1218 ,  H01L27/1225 ,  H01L29/24 ,  H01L29/66969 ,  H01L29/78696

Abstract: According to one embodiment, a display device includes thin-film transistor. The thin-film transistor includes a first semiconductor layer, a first insulating film, a gate electrode, a second insulating film, a second semiconductor layer, a first electrode and a second electrode. The gap between the bottom surface of the gate electrode and the upper surface of the first channel region of the first semiconductor layer is larger than the gap between the upper surface of the gate electrode and the bottom surface of the second channel region of the second semiconductor layer.

Abstract translation: 根据一个实施例，显示装置包括薄膜晶体管。 薄膜晶体管包括第一半导体层，第一绝缘膜，栅电极，第二绝缘膜，第二半导体层，第一电极和第二电极。 栅电极的底表面和第一半导体层的第一沟道区的上表面之间的间隙大于栅电极的上表面和第二半导体的第二沟道区的底表面之间的间隙 层。

公开(公告)号：US12249654B2

公开(公告)日：2025-03-11

申请号：US18447400

申请日：2023-08-10

Applicant: Japan Display Inc.

Inventor： Yohei Yamaguchi ,  Yuichiro Hanyu ,  Hiroki Hidaka

IPC: H01L29/786 ,  H01L21/02 ,  H01L27/12 ,  H01L29/423 ,  H10K59/123 ,  H10K59/126

Abstract: A semiconductor device including a first oxide semiconductor layer, a first gate electrode opposing the first oxide semiconductor layer, a first gate insulating layer between the first oxide semiconductor layer and the first gate electrode, a first insulating layer covering the first oxide semiconductor layer and having a first opening, a first conductive layer above the first insulating layer and in the first opening, the first conductive layer being electrically connected to the first oxide semiconductor layer, and an oxide layer between an upper surface of the first insulating layer and the first conductive layer, wherein the first insulating layer is exposed from the oxide layer in a region not overlapping the first conductive layer in a plan view.

公开(公告)号：US12237335B2

公开(公告)日：2025-02-25

申请号：US17739486

申请日：2022-05-09

Applicant: Japan Display Inc.

Inventor： Yohei Yamaguchi

IPC: H01L27/12 ,  G02F1/1343 ,  G02F1/1368 ,  G09G3/36 ,  H01L29/66 ,  H01L29/786 ,  H01L27/01

Abstract: The purpose of the invention is to form a stable oxide semiconductor TFT in a display device. The concrete structure is: A display device having a TFT substrate that includes a TFT having an oxide semiconductor layer comprising: the oxide semiconductor layer is formed on a first insulating film that is formed by a silicon oxide layer, the oxide semiconductor layer and an aluminum oxide film are directly formed on the first insulating film. The first insulating film becomes oxygen rich when the aluminum oxide film is formed on the first insulating film by sputtering. Oxygens in the first insulating film is effectively confined in the first insulating film, eventually, the oxygens diffuse to the oxide semiconductor for a stable operation of the oxide semiconductor TFT.

公开(公告)号：US12183830B2

公开(公告)日：2024-12-31

申请号：US17584481

申请日：2022-01-26

Applicant: Japan Display Inc.

Inventor： Yohei Yamaguchi

IPC: H01L29/786 ,  H01L29/66

Abstract: A display device includes a metal layer composed of multiple layers including a lowermost layer lower in an ionization tendency than a middle layer, the lowermost layer being in contact with and on the oxide semiconductor layer. Each channel region is interposed between a corresponding one of the first electrodes and a corresponding one of the second electrodes, constituting a corresponding one of the thin film transistors. The oxide semiconductor layer is continuous between a pair of channel regions included in an adjacent pair of thin film transistors. The metal layer is continuous between a pair of first electrodes included in the adjacent pair of thin film transistors.

公开(公告)号：US12170288B2

公开(公告)日：2024-12-17

申请号：US17958515

申请日：2022-10-03

Applicant: Japan Display Inc.

Inventor： Yohei Yamaguchi

IPC: H01L27/12 ,  G02F1/1333 ,  G02F1/1362 ,  H01L21/02 ,  H01L21/311 ,  H01L21/822

Abstract: A wiring structure includes a structure body including a pattern, a first conductive layer above the structure body, the first conductive layer having a shape, the shape crossing an edge of a pattern of the structure body and reflecting a step of the edge of the pattern of the structure body, a first insulating layer above the first conductive layer, the first insulating layer having a first opening overlapping the edge of the pattern of the structure body in a plane view, and r is arranged with a second opening in a region overlapping the semiconductor layer in a plane view, a second conductive layer in the first opening, the second conductive layer being connected to the first conductive layer.

公开(公告)号：US11189734B2

公开(公告)日：2021-11-30

申请号：US16735800

申请日：2020-01-07

Applicant: Japan Display Inc.

Inventor： Yohei Yamaguchi ,  Yuichiro Hanyu ,  Hiroki Hidaka

IPC: H01L27/00 ,  H01L29/00 ,  H01L29/786 ,  H01L29/423 ,  H01L21/02 ,  H01L27/12 ,  H01L21/00 ,  H01L27/32

Abstract: A semiconductor device including a first oxide semiconductor layer, a first gate electrode opposing the first oxide semiconductor layer, a first gate insulating layer between the first oxide semiconductor layer and the first gate electrode, a first insulating layer covering the first oxide semiconductor layer and having a first opening, a first conductive layer above the first insulating layer and in the first opening, the first conductive layer being electrically connected to the first oxide semiconductor layer, and an oxide layer between an upper surface of the first insulating layer and the first conductive layer, wherein the first insulating layer is exposed from the oxide layer in a region not overlapping the first conductive layer in a plan view.

公开(公告)号：US11133337B2

公开(公告)日：2021-09-28

申请号：US16852925

申请日：2020-04-20

Applicant: Japan Display Inc.

Inventor： Hajime Watakabe ,  Isao Suzumura ,  Akihiro Hanada ,  Yohei Yamaguchi

IPC: H01L27/00 ,  H01L29/00 ,  H01L27/12 ,  H01L29/24 ,  H01L29/66 ,  H01L29/786

Abstract: A display device including a substrate having thin film transistors (TFT) comprising: the TFT including an oxide semiconductor film, a gate electrode and an insulating film formed between the oxide semiconductor film and the gate electrode, wherein a first aluminum oxide film and a second aluminum oxide film, which is formed on the first aluminum oxide film, are formed between the insulating film and the gate electrode, an oxygen concentration in the first aluminum oxide film is bigger than an oxygen concentration in the second aluminum oxide film.

公开(公告)号：US10895792B2

公开(公告)日：2021-01-19

申请号：US16711544

申请日：2019-12-12

Applicant: Japan Display Inc.

Inventor： Yohei Yamaguchi ,  Arichika Ishida ,  Hidekazu Miyake ,  Hiroto Miyake ,  Isao Suzumura

IPC: H01L27/12 ,  H01L29/786 ,  G02F1/1368 ,  G02F1/1362 ,  G02F1/1343 ,  H01L29/423

Abstract: According to one embodiment, a semiconductor device includes an insulating substrate, a first metal layer on the insulating substrate, a first insulating layer on the insulating substrate and the first metal layer, a semiconductor layer on the first insulating layer, a second insulating layer on the semiconductor layer and the first insulating layer, a second metal layer on the second insulating layer, and a first electrode and a second electrode which are electrically connected to the semiconductor layer. The first metal layer overlaps the second metal layer. A third metal layer contacts a top surface of the second metal layer and a top surface of the first metal layer.

公开(公告)号：US10580801B2

公开(公告)日：2020-03-03

申请号：US15978464

申请日：2018-05-14

Applicant: Japan Display Inc.

Inventor： Isao Suzumura ,  Hajime Watakabe ,  Akihiro Hanada ,  Hirokazu Watanabe ,  Yohei Yamaguchi ,  Marina Shiokawa ,  Ryotaro Kimura

IPC: G02F1/1343 ,  G02F1/1368 ,  G02F1/1362 ,  G02F1/1337 ,  H01L27/12 ,  H01L29/786 ,  G02F1/1333 ,  H01L27/32

Abstract: The purpose of the invention is to form a flexible display device where the substrate is made of resin, wherein the TFT can be annealed in high temperature; consequently, a reliability of the TFT is improved. The concrete measure is as follows. A display device having a pixel electrode and a TFT including a semiconductor layer on a substrate comprising: a source region of the semiconductor layer connects with a source electrode, a drain region of the semiconductor layer connects with a drain electrode; the pixel electrode connects with the source electrode; the drain electrode connects with a video signal line; a distance between the drain electrode and the substrate is smaller than a distance between the semiconductor and the substrate, the semiconductor layer is formed between the pixel electrode and the substrate.