摘要:
A disposable life-saving garment for use in the event of fire, comprises a body-protecting portion and a head-protecting portion. The body-protecting portion is configured with a lining formed to enclose the body of a wearer and a cover covering the liner, the cover being made of a sealed material that can block the passage of air. A closed air passage is formed between the liner and cover. A compressed air tank is installed in a pocket of the cover and is connected to the air passage through a check valve. An intake hose supplies compressed air from the air passage of the body-protecting portion to the head-protecting portion. The head-protecting portion has a heat-resistant transparent window and a one-way outlet unit. The body-protecting portion and the head-protecting portion are made of a nonflammable material or a fire retardant material.
摘要:
A three-terminal Ovonic Threshold Switch (OTS) is used to provide current to a Phase Change Memory Switch (PCMS) cross point array. The current is started by sending a small current into the second terminal of the three-terminal OTS allowing a larger current to flow from the first terminal to the third terminal of the three-terminal OTS. A method of making the three-terminal OTS is also presented.
摘要:
Disclosed is an anode supported flat-tube solid oxide fuel cell including: a stack including a plurality of unit cells layered therein, each of the unit cells having an anode support, wherein within the anode support, a flow path allowing a fuel gas to flow is formed, and on a surface of the anode support, an electrolyte, a cathode, and an interconnect layer are provided, wherein the interconnect layer positioned between the unit cells constituting the stack is formed by a paste obtained by mixing an electrical conductive material with glass, and on the interconnect layer formed by the paste, a metallic mesh for drawing out a current collection wire is disposed.
摘要:
A substrate bias voltage detection unit compares a level of a substrate bias voltage with a reference voltage in response to a self-refresh signal, an idle signal, and a refresh count signal so as to output an oscillating driving signal, enables the oscillating driving signal when the substrate bias voltage is equal to or higher than a first level in a normal mode, disables the oscillating driving signal when the substrate bias voltage is at a second level in a self-refresh mode, and disables the oscillating driving signal when the substrate bias voltage is at a third level in the self-refresh mode. An oscillation unit outputs an oscillating signal according to the oscillating driving signal. A voltage pumping unit controls pumping of the substrate bias voltage according to an output signal of the oscillation unit and then outputs a pumped substrate bias voltage.
摘要:
Disclosed therein are apparatus and method for manufacturing agricultural water supply hose, which can continuously supply a small quantity of water to various farm products or agricultural crops such as garden fruits. The apparatus and method can firmly bond the nozzle chips on the hose without regard to materials and constituents of the nozzle chips not by thermally bonding the nozzle chips on the inner periphery of the hose but by bonding the nozzle chips on the inner periphery of the hose after coating the inner periphery of the hose with an adhesive which is supplied from an adhesive coating device, thereby increasing durability. The apparatus and method can prevent distortion of the bonded portion and concentration of stress on the bonded portion even though the coefficients in thermal expansion of the nozzle chips and the hose are different from each other since the bonding between the nozzle chips and the hose is carried out after the hose is sufficiently cooled from a melting point. The apparatus and method can supply the nozzle chips up to a place, where the nozzle chips will be bonded, in such a way that the nozzle chips supplied from a bowl feeder is supplied forwardly by constant-speed rollers and then supplied to a portion, which will be bonded, by chip inputting rollers rotating rapidly, thereby supplying the nozzle chips more easily and conveniently.
摘要:
A memory includes a phase change memory element having a memory layer of a calcogenide material and a glue layer of an alloy of the form TiaXbNc where X is selected in the group comprising silicon, aluminum, carbon, or boron, and c may be 0. The nitrogen and silicon are adapted to reduce the diffusion of titanium toward the chalcogenide layer.
摘要翻译:存储器包括相变存储元件,该相变存储元件具有硫化物质材料的存储层和形式为Ti x N b N c C的合金的胶层, / SUB>其中X选自硅,铝,碳或硼,c可以为0.氮和硅适于减少钛向硫族化物层的扩散。
摘要:
A multilevel phase change memory may be formed of a chalcogenide material formed between a pair of spaced electrodes. The cross-sectional area of the chalcogenide material may decrease as the material extends from one electrode to another. As a result, the current density decreases from one electrode to the other. This means that a higher current is necessary to convert the material that has the largest cross-sectional area. As a result, different current levels may be utilized to convert different amounts of the chalcogenide material to the amorphous or reset state. A distinguishable resistance may be associated with each of those different amounts of amorphous material, providing the opportunity to engineer a number of different current selectable programmable states.
摘要:
An anti-fuse circuit includes an anti-fuse device and an electric field control unit. The anti-fuse device is formed having a MOS structure including a first junction, a second junction and a gate terminal. The electric field control unit performs a control operation so that an electric field is formed in the anti-fuse device at the time of an anti-fusing operation. Electric fields formed at the first and second junctions of the anti-fuse device are separately controlled, so that breakdown can occur at two points. Further, the gate terminal of the anti-fuse device is implemented in the form of a band-shaped closed circuit.
摘要:
A method of forming a metal pattern using a selective electroplating process is provided. First, a dielectric layer is formed on an underlying layer. Then, a trench defining blanket region is formed by patterning the dielectric layer. A diffusion barrier layer is conformally formed in the trench and on the blanket region. A polishing/plating stop layer and an upper seed layer are conformally formed on the diffusion barrier layer in a successive manner. The polishing/plating layer in the blanket region is exposed by selectively removing the upper seed layer in the blanket region, and, at the same time, a seed layer pattern remaining in the trenches is formed. An upper conductive layer is formed to fill the trench surrounded by the seed layer pattern using an electroplating process. Then, the dielectric layer in the blanket region is exposed by planarizing the upper conductive layer, the polishing/plating stop layer, the seed layer pattern, and the diffusion barrier layer.
摘要:
Erosion of chalcogenides in phase change memories using ovonic threshold switch selectors can be reduced by controlling columnar morphology in electrodes used in the ovonic threshold switch. The columnar morphology may cause cracks to occur which allow etchants used to etch the ovonic threshold switch to sneak through the ovonic threshold switch and to attack chalcogenides, either in the switch or in the memory element. In one embodiment, the electrode may be split into two metal nitride layers separated by an intervening metal layer.