公开(公告)号：US06976902B2

公开(公告)日：2005-12-20

申请号：US10850688

申请日：2004-05-21

申请人： Ja-Eung Koo ,  Jong-Won Lee ,  Sung-Bae Lee ,  Duk-Ho Hong ,  Sang-Rok Hah ,  Hong-Seong Son

发明人： Ja-Eung Koo ,  Jong-Won Lee ,  Sung-Bae Lee ,  Duk-Ho Hong ,  Sang-Rok Hah ,  Hong-Seong Son

IPC分类号： B24B37/02 ,  B24B37/04 ,  B24B49/10 ,  B24B49/14 ,  B24B1/00

CPC分类号： B24B37/013 ,  B24B49/10 ,  B24B49/14

摘要： There is provided a chemical mechanical polishing apparatus, which may include a polishing table rotated by a polishing table motor and having a pad thereon, a carrier head located above the polishing table to be rotatable by the driving of a carrier head motor and having a wafer located under the bottom thereof, a slurry supplier for supplying a slurry to the upper portion of the polishing table, a first polishing end point detector for detecting a polishing end point through the temperature change of the temperature sensor, at least one temperature sensor for detecting the temperature of a polishing region (the wafer, the pad, and the slurry), and a second polishing end point detector for detecting a polishing end point from the changes of load current, voltage, and resistance of the carrier head motor. Further, instead of the second polishing end point detector, an optical signal polishing end point detector may be employed, for detecting the polishing end point by the light illuminated on the wafer and reflected from the wafer.

摘要翻译： 提供了一种化学机械抛光装置，其可以包括由抛光台马达旋转并且具有垫的抛光台，位于抛光台上方的载体头可以通过载体头马达的驱动旋转并具有晶片 位于其底部的浆料供应器，用于向抛光台的上部供应浆料;第一抛光终点检测器，用于通过温度传感器的温度变化检测抛光终点;至少一个检测温度传感器 抛光区域（晶片，焊盘和浆料）的温度，以及用于从承载头电动机的负载电流，电压和电阻的变化检测抛光终点的第二抛光终点检测器。 此外，代替第二研磨终点检测器，可以采用光信号抛光终点检测器，用于通过照射在晶片上的光并从晶片反射来检测抛光终点。

公开(公告)号：US07282451B2

公开(公告)日：2007-10-16

申请号：US11216686

申请日：2005-08-31

申请人： Duk Ho Hong ,  Kyoung Woo Lee ,  Markus Naujok ,  Roman Knoefler

发明人： Duk Ho Hong ,  Kyoung Woo Lee ,  Markus Naujok ,  Roman Knoefler

IPC分类号： H01L21/302

CPC分类号： C25D5/022 ,  H01L21/31144 ,  H01L21/76802 ,  H01L21/76877 ,  H01L23/485 ,  H01L2924/0002 ,  H01L2924/00

摘要： Methods of forming metal interconnect layers include forming an electrically insulating layer having a contact hole therein, on a semiconductor substrate and then forming a recess in the electrically insulating layer, at a location adjacent the contact hole. The contact hole and the recess are then filled with a first electrically conductive material (e.g., tungsten (W)). At least a portion of the first electrically conductive material within the contact hole is then exposed. This exposure occurs by etching back a portion of the electrically insulating layer using the first electrically conductive material within the contact hole and within the recess as an etching mask. The first electrically conductive material within the recess is then removed to expose another portion of the electrically insulating layer. Following this, the exposed portion of the first electrically conductive material is covered with a second electrically conductive material (e.g., copper (Cu)), which directly contacts the exposed portion of the first electrically conductive material. This covering step results in the definition of a wiring pattern including the first and second electrically conductive materials.

公开(公告)号：US06924234B2

公开(公告)日：2005-08-02

申请号：US10233805

申请日：2002-09-03

申请人： Ja-Hyung Han ,  Sang-Rok Hah ,  Hong-Seong Son ,  Duk-Ho Hong ,  Byung-Lyul Park

发明人： Ja-Hyung Han ,  Sang-Rok Hah ,  Hong-Seong Son ,  Duk-Ho Hong ,  Byung-Lyul Park

IPC分类号： H01L21/304 ,  H01L21/02 ,  H01L21/321 ,  H01L21/3213 ,  H01L21/768 ,  H01L21/44 ,  H01L21/302

CPC分类号： H01L21/02074 ,  H01L21/3212 ,  H01L21/32134 ,  H01L21/76838 ,  H01L21/7684

摘要： In a method and apparatus for polishing a Cu metal layer and a method for forming Cu metal wiring, Cu oxide created by a surface oxidation of a Cu metal layer is removed from the wafer. The Cu metal layer, in which Cu oxide is removed, is polished. By polishing the Cu metal layer using the above method, process failures, such as scratches, caused by the presence of remnants of Cu oxide during subsequent polishing can be prevented.

摘要翻译： 在用于抛光Cu金属层的方法和装置以及形成Cu金属布线的方法中，通过Cu金属层的表面氧化产生的Cu氧化物从晶片上去除。 抛光除去Cu氧化物的Cu金属层。 通过使用上述方法对Cu金属层进行研磨，可以防止在随后的研磨过程中由于存在Cu氧化物残留而引起的划痕等处理失败。

公开(公告)号：US20050070090A1

公开(公告)日：2005-03-31

申请号：US10875434

申请日：2004-06-24

申请人： Hyo-Jong Lee ,  Jong-Won Lee ,  Duk-Ho Hong ,  Sang-Rok Hah ,  Hong-Seong Son ,  Jin-Sung Chung ,  Jae-Soo Ahn

发明人： Hyo-Jong Lee ,  Jong-Won Lee ,  Duk-Ho Hong ,  Sang-Rok Hah ,  Hong-Seong Son ,  Jin-Sung Chung ,  Jae-Soo Ahn

IPC分类号： H01L21/28 ,  H01L21/768 ,  H01L23/532 ,  H01L21/48 ,  H01L21/44 ,  H01L21/4763 ,  H01L21/50

CPC分类号： H01L21/76846 ,  H01L21/7684 ,  H01L21/76849 ,  H01L21/76864 ,  H01L21/76873 ,  H01L21/76879 ,  H01L23/53238 ,  H01L2924/0002 ,  H01L2924/00

摘要： A method of forming a metal pattern using a selective electroplating process is provided. First, a dielectric layer is formed on an underlying layer. Then, a trench defining blanket region is formed by patterning the dielectric layer. A diffusion barrier layer is conformally formed in the trench and on the blanket region. A polishing/plating stop layer and an upper seed layer are conformally formed on the diffusion barrier layer in a successive manner. The polishing/plating layer in the blanket region is exposed by selectively removing the upper seed layer in the blanket region, and, at the same time, a seed layer pattern remaining in the trenches is formed. An upper conductive layer is formed to fill the trench surrounded by the seed layer pattern using an electroplating process. Then, the dielectric layer in the blanket region is exposed by planarizing the upper conductive layer, the polishing/plating stop layer, the seed layer pattern, and the diffusion barrier layer.

摘要翻译： 提供了使用选择性电镀工艺形成金属图案的方法。 首先，在下层形成介电层。 然后，通过图案化介电层形成限定覆盖区域的沟槽。 扩散阻挡层在沟槽和覆盖区域中共形地形成。 抛光/电镀停止层和上部种子层以连续的方式共形地形成在扩散阻挡层上。 通过选择性地去除覆盖区域中的上部种子层，暴露覆盖区域中的抛光/镀覆层，并且同时形成留在沟槽中的晶种层图案。 形成上导电层以使用电镀工艺填充由种子层图案包围的沟槽。 然后，通过平坦化上导电层，抛光/电镀停止层，种子层图案和扩散阻挡层来曝光覆盖区域中的电介质层。

公开(公告)号：US07166019B2

公开(公告)日：2007-01-23

申请号：US11044373

申请日：2005-01-27

申请人： Moo-Yong Park ,  Ja-Eung Koo ,  Sang-Cheol Han ,  Duk-Ho Hong

发明人： Moo-Yong Park ,  Ja-Eung Koo ,  Sang-Cheol Han ,  Duk-Ho Hong

IPC分类号： B24B49/00

CPC分类号： B24B37/30 ,  Y10T279/11

摘要： A flexible membrane for a polishing head and a chemical mechanical polishing (CMP) apparatus having the same are provided. The flexible membrane for a polishing head includes a compressing plate having a first face and a second face opposite to the first face. The first face of the compressing plate holds a substrate with a vacuum provided thereto and compresses the substrate on a polishing pad. The second face of the compressing plate is combined with a supporter of the polishing head. The second face and the supporter define a space to which the vacuum for holding the substrate and a first pneumatic pressure for compressing the substrate are applied. A dividing member combined with the supporter is formed on the second face. The dividing member divides the space into at least two regions. A pneumatic pressure-introducing portion is formed at the dividing member. A second pneumatic pressure is provided to the compressing plate through the pneumatic pressure-introducing portion.

摘要翻译： 提供了一种用于抛光头的柔性膜和具有该柔性膜的化学机械抛光（CMP）装置。 用于抛光头的柔性膜包括具有第一面和与第一面相对的第二面的压缩板。 压缩板的第一面保持提供真空的基板，并将基板压在抛光垫上。 压缩板的第二面与抛光头的支撑件组合。 第二面和支撑件限定了用于保持基板的真空和用于压缩基板的第一气动压力的空间。 与支撑件组合的分隔构件形成在第二面上。 分隔构件将空间分成至少两个区域。 在分隔构件上形成气压导入部。 通过气动压力引入部分向压缩板提供第二气动压力。

公开(公告)号：US20050176354A1

公开(公告)日：2005-08-11

申请号：US11044373

申请日：2005-01-27

申请人： Moo-Yong Park ,  Ja-Eung Koo ,  Sang-Cheol Han ,  Duk-Ho Hong

发明人： Moo-Yong Park ,  Ja-Eung Koo ,  Sang-Cheol Han ,  Duk-Ho Hong

IPC分类号： B24B37/005 ,  B24B37/30 ,  H01L21/304 ,  B24B1/00

CPC分类号： B24B37/30 ,  Y10T279/11

摘要： A flexible membrane for a polishing head and a chemical mechanical polishing (CMP) apparatus having the same are provided. The flexible membrane for a polishing head includes a compressing plate having a first face and a second face opposite to the first face. The first face of the compressing plate holds a substrate with a vacuum provided thereto and compresses the substrate on a polishing pad. The second face of the compressing plate is combined with a supporter of the polishing head. The second face and the supporter define a space to which the vacuum for holding the substrate and a first pneumatic pressure for compressing the substrate are applied. A dividing member combined with the supporter is formed on the second face. The dividing member divides the space into at least two regions. A pneumatic pressure-introducing portion is formed at the dividing member. A second pneumatic pressure is provided to the compressing plate through the pneumatic pressure-introducing portion.

摘要翻译： 提供了一种用于抛光头的柔性膜和具有该柔性膜的化学机械抛光（CMP）装置。 用于抛光头的柔性膜包括具有第一面和与第一面相对的第二面的压缩板。 压缩板的第一面保持提供真空的基板，并将基板压在抛光垫上。 压缩板的第二面与抛光头的支撑件组合。 第二面和支撑件限定了用于保持基板的真空和用于压缩基板的第一气动压力的空间。 与支撑件组合的分隔构件形成在第二面上。 分隔构件将空间分成至少两个区域。 在分隔构件上形成气压导入部。 通过气动压力引入部分向压缩板提供第二气动压力。

公开(公告)号：US20050048875A1

公开(公告)日：2005-03-03

申请号：US10850688

申请日：2004-05-21

申请人： Ja-Eung Koo ,  Jong-Won Lee ,  Sung-Bae Lee ,  Duk-Ho Hong ,  Sang-Rok Hah ,  Hong-Seong Son

发明人： Ja-Eung Koo ,  Jong-Won Lee ,  Sung-Bae Lee ,  Duk-Ho Hong ,  Sang-Rok Hah ,  Hong-Seong Son

IPC分类号： B24B37/02 ,  B24B37/04 ,  B24B49/10 ,  B24B49/14 ,  B24B49/00 ,  B24B1/00

CPC分类号： B24B37/013 ,  B24B49/10 ,  B24B49/14

摘要： There is provided a chemical mechanical polishing apparatus, which may include a polishing table rotated by a polishing table motor and having a pad thereon, a carrier head located above the polishing table to be rotatable by the driving of a carrier head motor and having a wafer located under the bottom thereof, a slurry supplier for supplying a slurry to the upper portion of the polishing table, a first polishing end point detector for detecting a polishing end point through the temperature change of the temperature sensor, at least one temperature sensor for detecting the temperature of a polishing region (the wafer, the pad, and the slurry), and a second polishing end point detector for detecting a polishing end point from the changes of load current, voltage, and resistance of the carrier head motor. Further, instead of the second polishing end point detector, an optical signal polishing end point detector may be employed, for detecting the polishing end point by the light illuminated on the wafer and reflected from the wafer.

公开(公告)号：US07435673B2

公开(公告)日：2008-10-14

申请号：US11237987

申请日：2005-09-28

申请人： Kyoung Woo Lee ,  Ja-Hum Ku ,  Duk Ho Hong ,  Wan Jae Park

发明人： Kyoung Woo Lee ,  Ja-Hum Ku ,  Duk Ho Hong ,  Wan Jae Park

IPC分类号： H01L21/4763

CPC分类号： H01L21/7684 ,  H01L21/76801 ,  H01L21/76802 ,  H01L21/76877

摘要： Methods of forming metal interconnect structures include forming a first electrically insulating layer on a semiconductor substrate and forming a second electrically insulating layer on the first electrically insulating layer. The second and first electrically insulating layers are selectively etched in sequence to define a contact hole therein. A first metal layer (e.g., tungsten) is deposited. This first metal layer extends on the second electrically insulating layer and into the contact hole. The first metal layer is then patterned to expose the second electrically insulating layer. The second electrically insulating layer is selectively etched for a sufficient duration to expose the first electrically insulating layer and expose a metal plug within the contact hole. This selective etching step is performed using the patterned first metal layer as an etching mask. A seam within the exposed metal plug is then filled with an electrically conductive filler material (e.g., CoWP). A second metal layer is then formed on the exposed metal plug containing the electrically conductive filler material.

摘要翻译： 形成金属互连结构的方法包括在半导体衬底上形成第一电绝缘层，并在第一电绝缘层上形成第二电绝缘层。 依次选择性地蚀刻第二和第一电绝缘层以在其中限定接触孔。 沉积第一金属层（例如钨）。 该第一金属层在第二电绝缘层上延伸并进入接触孔。 然后将第一金属层图案化以暴露第二电绝缘层。 选择性地蚀刻第二电绝缘层足够的持续时间以暴露第一电绝缘层并在接触孔内露出金属插塞。 使用图案化的第一金属层作为蚀刻掩模来执行该选择性蚀刻步骤。 暴露的金属插头内的接缝然后用导电填充材料（例如，CoWP）填充。 然后在暴露的包含导电填料的金属塞上形成第二金属层。

公开(公告)号：US20060270228A1

公开(公告)日：2006-11-30

申请号：US11501791

申请日：2006-08-09

申请人： Hyo-Jong Lee ,  Jong-Won Lee ,  Duk-Ho Hong ,  Sang-Rok Hah ,  Hong-Seong Son ,  Jin-Sung Chung ,  Jae-Soo Ahn

发明人： Hyo-Jong Lee ,  Jong-Won Lee ,  Duk-Ho Hong ,  Sang-Rok Hah ,  Hong-Seong Son ,  Jin-Sung Chung ,  Jae-Soo Ahn

IPC分类号： H01L21/44

CPC分类号： H01L21/76846 ,  H01L21/7684 ,  H01L21/76849 ,  H01L21/76864 ,  H01L21/76873 ,  H01L21/76879 ,  H01L23/53238 ,  H01L2924/0002 ,  H01L2924/00

摘要： A method of forming a metal pattern using a selective electroplating process is provided. First, a dielectric layer is formed on an underlying layer. Then, a trench defining blanket region is formed by patterning the dielectric layer. A diffusion barrier layer is conformally formed in the trench and on the blanket region. A polishing/plating stop layer and an upper seed layer are conformally formed on the diffusion barrier layer in a successive manner. The polishing/plating layer in the blanket region is exposed by selectively removing the upper seed layer in the blanket region, and, at the same time, a seed layer pattern remaining in the trenches is formed. An upper conductive layer is formed to fill the trench surrounded by the seed layer pattern using an electroplating process. Then, the dielectric layer in the blanket region is exposed by planarizing the upper conductive layer, the polishing/plating stop layer, the seed layer pattern, and the diffusion barrier layer.

摘要翻译： 提供了使用选择性电镀工艺形成金属图案的方法。 首先，在下层形成介电层。 然后，通过图案化介电层形成限定覆盖区域的沟槽。 扩散阻挡层在沟槽和覆盖区域中共形地形成。 抛光/电镀停止层和上部种子层以连续的方式共形地形成在扩散阻挡层上。 通过选择性地去除覆盖区域中的上部种子层，暴露覆盖区域中的抛光/镀覆层，并且同时形成留在沟槽中的晶种层图案。 形成上导电层以使用电镀工艺填充由种子层图案包围的沟槽。 然后，通过平坦化上导电层，抛光/电镀停止层，种子层图案和扩散阻挡层来曝光覆盖区域中的电介质层。

公开(公告)号：US20050148292A1

公开(公告)日：2005-07-07

申请号：US11052342

申请日：2005-02-07

申请人： Ja-Hyung Hau ,  Sang-Rok Hah ,  Hong-Seong Son ,  Duk-Ho Hong ,  Byung-Lyul Park

发明人： Ja-Hyung Hau ,  Sang-Rok Hah ,  Hong-Seong Son ,  Duk-Ho Hong ,  Byung-Lyul Park

IPC分类号： H01L21/304 ,  H01L21/02 ,  H01L21/321 ,  H01L21/3213 ,  H01L21/768 ,  B24B7/00

CPC分类号： H01L21/02074 ,  H01L21/3212 ,  H01L21/32134 ,  H01L21/76838 ,  H01L21/7684

摘要： In a method and apparatus for polishing a Cu metal layer and a method for forming Cu metal wiring, Cu oxide created by a surface oxidation of a Cu metal layer is removed from the wafer. The Cu metal layer, in which Cu oxide is removed, is polished. By polishing the Cu metal layer using the above method, process failures, such as scratches, caused by the presence of remnants of Cu oxide during subsequent polishing can be prevented.