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321 条记录 (耗时 0.055 秒)

    Lighting system
    32.
    发明授权
    Lighting system 有权
    照明系统

    公开(公告)号：US08441184B2

    公开(公告)日：2013-05-14

    申请号：US13442100

    申请日：2012-04-09

    申请人： Junichiro Sakata

    发明人： Junichiro Sakata

    IPC分类号： G09G3/10

    CPC分类号： H01L51/5036 ,  G09G3/3208 ,  G09G3/3216 ,  G09G3/3225 ,  G09G2320/048 ,  G09G2320/0666 ,  H01L27/3211 ,  H01L27/3244 ,  H01L51/5278 ,  H05B33/0896

    摘要： The present invention provides a lighting system which uses a stacked light emitting element provided with a plurality of light emitting units and causes little change in emission color even after a long time of usage. A lighting system is provided, including a first light emitting element including a plurality of light emitting units; a second light emitting element; a first control means which controls light emission of the first light emitting element; and a second control means which controls light emission of the second light emitting element, where the first light emitting element emits light of a first emission color that is an initial emission color and a second emission color that is an emission color after change over time, and the second light emitting element emits light of a complementary color of the second emission color. The above structure suppresses color shift due to change over time.

    摘要翻译： 本发明提供一种照明系统，其使用具有多个发光单元的堆叠发光元件，并且即使在长时间使用之后也几乎不发生发光颜色的变化。 提供一种照明系统，包括包括多个发光单元的第一发光元件; 第二发光元件; 第一控制装置，其控制第一发光元件的发光; 以及第二控制装置，其控制第二发光元件的发光，其中第一发光元件发射作为初始发光颜色的第一发光颜色的光和作为随时间变化的发光颜色的第二发光颜色， 并且第二发光元件发射第二发射颜色的互补色的光。 上述结构抑制随着时间的变化而引起的颜色偏移。

    Semiconductor device and method for manufacturing the same
    35.
    发明授权
    Semiconductor device and method for manufacturing the same 有权
    半导体装置及其制造方法

    公开(公告)号：US08384085B2

    公开(公告)日：2013-02-26

    申请号：US12851097

    申请日：2010-08-05

    申请人： Hajime Kimura ,  Junichiro Sakata ,  Kohei Toyotaka

    发明人： Hajime Kimura ,  Junichiro Sakata ,  Kohei Toyotaka

    IPC分类号： H01L29/04

    CPC分类号： H01L27/124 ,  H01L27/1225

    摘要： An object is to provide a semiconductor device in which characteristics of a driver circuit portion are improved while the aperture ratio of a pixel portion is increased. Alternatively, it is an object to provide a semiconductor device with low power consumption or to provide a semiconductor device in which the threshold voltage of a transistor can be controlled. The semiconductor device includes a substrate having an insulating surface, a pixel portion provided over the substrate, and at least some of driver circuits for driving the pixel portion. A transistor included in the pixel portion and a transistor included in the driver circuit are top-gate bottom-contact transistors. Electrodes and a semiconductor layer of the transistor in the pixel portion have light-transmitting properties. The resistance of electrodes in the driver circuit is lower than the electrodes included in the transistor in the pixel portion.

    摘要翻译： 本发明的目的在于提供一种在像素部分的开口率增加的同时改善驱动电路部分的特性的半导体器件。 或者，目的是提供一种具有低功耗的半导体器件或提供可以控制晶体管的阈值电压的半导体器件。 半导体器件包括具有绝缘表面的衬底，设置在衬底上的像素部分和用于驱动像素部分的至少一些驱动器电路。 包括在像素部分中的晶体管和包括在驱动器电路中的晶体管是顶栅极底接触晶体管。 像素部分中的电极和晶体管的半导体层具有透光性。 驱动电路中的电极的电阻比像素部分中的晶体管中包含的电极低。

    Transistor, semiconductor device including the transistor, and manufacturing method of the transistor and the semiconductor device
    39.
    发明授权
    Transistor, semiconductor device including the transistor, and manufacturing method of the transistor and the semiconductor device 有权
    晶体管，包括晶体管的半导体器件，以及晶体管和半导体器件的制造方法

    公开(公告)号：US08278657B2

    公开(公告)日：2012-10-02

    申请号：US12699974

    申请日：2010-02-04

    申请人： Junichiro Sakata ,  Hiromichi Godo ,  Takashi Shimazu

    发明人： Junichiro Sakata ,  Hiromichi Godo ,  Takashi Shimazu

    IPC分类号： H01L29/786

    CPC分类号： H01L29/7869 ,  H01L29/78669 ,  H01L29/78696

    摘要： To suppress deterioration in electrical characteristics in a transistor including an oxide semiconductor layer or a semiconductor device including the transistor. In a transistor in which a channel layer is formed using an oxide semiconductor, a silicon layer is provided in contact with a surface of the oxide semiconductor layer. Further, the silicon layer is provided in contact with at least a region of the oxide semiconductor layer, in which a channel is formed, and a source electrode layer and a drain electrode layer are provided in contact with regions of the oxide semiconductor layer, over which the silicon layer is not provided.

    摘要翻译： 为了抑制包括氧化物半导体层的晶体管或包括晶体管的半导体器件的电特性的劣化。 在其中使用氧化物半导体形成沟道层的晶体管中，提供与氧化物半导体层的表面接触的硅层。 此外，硅层设置成与至少形成沟道的氧化物半导体层的区域接触，并且提供与氧化物半导体层的区域接触的源电极层和漏电极层， 不提供硅层。

    Light emitting device and electronic appliance using the same
    40.
    发明授权
    Light emitting device and electronic appliance using the same 有权
    发光装置及使用其的电子设备

    公开(公告)号：US08252434B2

    公开(公告)日：2012-08-28

    申请号：US13185867

    申请日：2011-07-19

    申请人： Yuji Iwaki ,  Satoshi Seo ,  Takahiro Kawakami ,  Hisao Ikeda ,  Junichiro Sakata ,  Tomoya Aoyama

    发明人： Yuji Iwaki ,  Satoshi Seo ,  Takahiro Kawakami ,  Hisao Ikeda ,  Junichiro Sakata ,  Tomoya Aoyama

    IPC分类号： H05B33/12

    CPC分类号： H01L51/0052 ,  H01L51/0071 ,  H01L51/0081 ,  H01L51/5052 ,  H01L51/5088 ,  H05B33/22 ,  Y10S428/917

    摘要： A light emitting device comprises a pair of electrodes and a mixed layer provided between the pair of electrodes. The mixed layer contains an organic compound which contains no nitrogen atoms, i.e., an organic compound which dose not have an arylamine skeleton, and a metal oxide. As the organic compound, an aromatic hydrocarbon having an anthracene skeleton is preferably used. As such an aromatic hydrocarbon, t-BuDNA, DPAnth, DPPA, DNA, DMNA, t-BuDBA, and the like are listed. As the metal oxide, molybdenum oxide, vanadium oxide, ruthenium oxide, rhenium oxide, and the like are preferably used. Further, the mixed layer preferably shows absorbance per 1 μm of 1 or less or does not show a distinct absorption peak in a spectrum of 450 to 650 nm when an absorption spectrum is measured.

    摘要翻译： 发光器件包括一对电极和设置在该对电极之间的混合层。 混合层含有不含氮原子的有机化合物即不具有芳胺骨架的有机化合物和金属氧化物。 作为有机化合物，优选使用具有蒽骨架的芳香族烃。 作为这样的芳烃，列举了t-BuDNA，DPAnth，DPPA，DNA，DMNA，t-BuDBA等。 作为金属氧化物，优选使用氧化钼，氧化钒，氧化钌，氧化铼等。 此外，当测量吸收光谱时，混合层优选显示每1μm的吸光度为1或更小，或者在450至650nm的光谱中不显示不同的吸收峰。