Fabrication Method of Optical Wiring Board and Optical Printed Circuit Board
    31.
    发明申请
    Fabrication Method of Optical Wiring Board and Optical Printed Circuit Board 失效
    光接线板和光电印刷电路板的制作方法

    公开(公告)号:US20110052118A1

    公开(公告)日:2011-03-03

    申请号:US12866180

    申请日:2009-01-14

    申请人: Yasunobu Matsuoka

    发明人: Yasunobu Matsuoka

    IPC分类号: G02B6/13 G02B6/12 B05D5/06

    摘要: The fabrication of an optical wiring board is performed in the following manner: A core member 13 for a mirror 22 is pattern-formed on a clad layer 11, and simultaneously, using the core member 13, each alignment mark pattern 14 is formed at any position on the clad layer 11. Further, with positioning in reference to each alignment mark 14, the core pattern 13 is subjected to physical cutting to form a bevel part and a concave part 23. Then, a metallic reflective film 18 is coated on the surface of the bevel part. Thereafter, with positioning in reference to each alignment mark 14, an optical wiring core pattern 20 is formed on the clad layer 11 adjacently to the mirror 22.

    摘要翻译: 光线路板的制造以如下方式进行:用于反射镜22的芯构件13在包层11上图案形成,同时使用芯构件13,每个对准标记图案14形成在任何 位置。此外,通过相对于每个对准标记14进行定位,对芯图案13进行物理切割以形成斜面部分和凹部23.然后,在金属反射膜18上涂覆金属反射膜18 斜面部分的表面。 此后,通过相对于每个对准标记14进行定位,在包层11上与反射镜22相邻地形成光布线芯图案20。

    Planar optical waveguide array module and method of fabricating the same
    32.
    发明授权
    Planar optical waveguide array module and method of fabricating the same 失效
    平面光波导阵列模块及其制造方法

    公开(公告)号:US07876984B2

    公开(公告)日:2011-01-25

    申请号:US12470502

    申请日:2009-05-22

    申请人: Yasunobu Matsuoka

    发明人: Yasunobu Matsuoka

    IPC分类号: G02B6/12 G02B6/26

    CPC分类号: B29D11/00663 G02B6/4249

    摘要: The optical element array and an optical waveguide array are optically connected on the substrate. The optical waveguide array includes optical waveguide channels which are the outermost optical waveguide channels on both sides of optical waveguide array channels and each of which is provided with a mirror structure for light redirection. With the optical element array driven by a bias applied thereto, the optical waveguide array is brought near the optical element array. The optical axes of the optical waveguide array channels and the optical element array are aligned while monitoring optical signals outputted from the outermost optical waveguide channels on both sides of the optical waveguide array channels via the mirror structures for light redirection. The optical waveguide array is fixed to the substrate in such a position that the optical signals have a desired output value.

    摘要翻译: 光学元件阵列和光波导阵列在基板上光学连接。 光波导阵列包括光波导通道,它们是光波导阵列通道两侧的最外面的光波导通道,并且每个波导通道设置有用于光重定向的反射镜结构。 通过由施加到其上的偏压驱动的光学元件阵列,使光波导阵列靠近光学元件阵列。 光波导阵列通道和光学元件阵列的光轴在通过用于光重定向的反射镜结构监视从光波导阵列通道两侧的最外侧光波导通道输出的光信号的同时被对准。 光波导阵列固定在基板上,使光信号具有期望的输出值。

    Avalanche photodiode
    34.
    发明申请
    Avalanche photodiode 有权
    雪崩光电二极管

    公开(公告)号:US20060110841A1

    公开(公告)日:2006-05-25

    申请号:US11320750

    申请日:2005-12-30

    IPC分类号: H01L21/00

    CPC分类号: H01L31/1075

    摘要: An avalanche photodiode includes at least one crystal layer having a larger band-gap than that of an absorption layer formed by a composition or material different from that of the absorption layer formed on a junction interface between a compound semiconductor absorbing an optical signal and an Si multiplication layer, and the crystal layer may be intentionally doped with n or p type impurities to cancel electrical influences of the impurities containing oxides present on the junction interface of compound semiconductor and surface of Si.

    摘要翻译: 雪崩光电二极管包括至少一个具有比由吸收层形成的吸收层的组成或材料形成的吸收层更大的带隙的晶体层,所述组合物或材料与形成在吸收光信号的化合物半导体和Si 可以有意地用n或p型杂质掺杂晶体层,以消除存在于化合物半导体的结界面和Si表面上的存在的氧化物的杂质的电学影响。

    SEMICONDUCTOR PHOTODETECTOR WITH OHMIC CONTACT AREAS FORMED TO PREVENT INCIDENT LIGHT FROM RESOLVING THE AREAS, SEMICONDUCTOR PHOTO RECEIVER AND SEMICONDUCTOR DEVICE INSTALLED WITH THE SEMICONDUCTOR PHOTODETECTOR
    35.
    发明授权
    SEMICONDUCTOR PHOTODETECTOR WITH OHMIC CONTACT AREAS FORMED TO PREVENT INCIDENT LIGHT FROM RESOLVING THE AREAS, SEMICONDUCTOR PHOTO RECEIVER AND SEMICONDUCTOR DEVICE INSTALLED WITH THE SEMICONDUCTOR PHOTODETECTOR 有权
    具有OHMIC联系方式的半导体光电转换器,用于防止偶然的光源解决领域,半导体照相接收器和半导体器件与半导体光电二极管安装

    公开(公告)号:US06670600B2

    公开(公告)日:2003-12-30

    申请号:US09905956

    申请日:2001-07-17

    IPC分类号: H01L3100

    摘要: An ultrahigh speed, high sensitivity photodetector, optical module and/or optical transmission device made by reducing the size of a surface illuminated type photodetector to decrease capacitance C. The effective detecting area on a side of the substrate that is opposite to a light incidence side of the substrate in a surface illuminated type photodetector and that is reached by the incident light passing through the semiconductor includes a plurality of ohmic contact areas and a reflector. The reflector may be a laminate comprised of two films in contact with the semiconductor including a transparent film (lower) and a metal film (upper). The size of the ohmic contacts may be small when compared to the wavelength of light incident on the surface of the photodetector. The photodetector may be used in ultrahigh speed, high sensitivity optical modules, semiconductor photo receivers and optical transmission devices with increased transmission capacities.

    摘要翻译: 通过减小表面照明型光电检测器的尺寸以减小电容C制成的超高速度,高灵敏度的光电检测器,光学模块和/或光传输装置。基板的与光入射侧相反的一侧上的有效检测区域 在通过半导体的入射光所达到的表面照明型光电检测器中的基板包括多个欧姆接触区域和反射器。 反射器可以是由包括透明膜(下)和金属膜(上部)的与半导体接触的两个膜组成的层压体。 当与入射在光电检测器表面上的光的波长相比时,欧姆接触的尺寸可能很小。 光电检测器可以用于具有增加的传输容量的超高速,高灵敏度光学模块,半导体光电接收器和光传输装置中。

    Fabrication method of optical wiring board and optical printed circuit board
    36.
    发明授权
    Fabrication method of optical wiring board and optical printed circuit board 失效
    光接线板和光电印刷电路板的制作方法

    公开(公告)号:US08639067B2

    公开(公告)日:2014-01-28

    申请号:US12866180

    申请日:2009-01-14

    申请人: Yasunobu Matsuoka

    发明人: Yasunobu Matsuoka

    IPC分类号: G02B6/12

    摘要: The fabrication of an optical wiring board is performed in the following manner: A core member 13 for a mirror 22 is pattern-formed on a clad layer 11, and simultaneously, using the core member 13, each alignment mark pattern 14 is formed at any position on the clad layer 11. Further, with positioning in reference to each alignment mark 14, the core pattern 13 is subjected to physical cutting to form a bevel part and a concave part 23. Then, a metallic reflective film 18 is coated on the surface of the bevel part. Thereafter, with positioning in reference to each alignment mark 14, an optical wiring core pattern 20 is formed on the clad layer 11 adjacently to the mirror 22.

    摘要翻译: 光线路板的制造以如下方式进行:用于反射镜22的芯构件13在包层11上图案形成,同时使用芯构件13,每个对准标记图案14形成在任何 位置。此外,通过相对于每个对准标记14进行定位,对芯图案13进行物理切割以形成斜面部分和凹部23.然后,在金属反射膜18上涂覆金属反射膜18 斜面部分的表面。 此后,通过相对于每个对准标记14进行定位,在包层11上与反射镜22相邻地形成光布线芯图案20。

    Optical Module
    37.
    发明申请
    Optical Module 审中-公开
    光模块

    公开(公告)号:US20120328229A1

    公开(公告)日:2012-12-27

    申请号:US13490513

    申请日:2012-06-07

    IPC分类号: G02F1/295 G02B6/36

    CPC分类号: G02B6/4201

    摘要: There is provided an optical module including photonic devices set in array, prepared by integrating a plurality of photonic devices with each other in such a state as arranged in such a array as to enable light beams to output in the common direction. The plural photonic devices each include a first electrode, and a second electrode, arranged in the same direction as the plural photonic devices are arranged, and the first and second electrodes of the photonic devices adjacent to each other are disposed such that respective electrode layouts are a mirror image of each other.

    摘要翻译: 提供了一种光学模块,其包括设置在阵列中的光子器件,其通过以如此排列成使得光束能够沿共同方向输出的状态彼此集成多个光子器件而制备。 多个光子器件各自包括沿与多个光子器件相同的方向排列的第一电极和第二电极,并且彼此相邻的光子器件的第一和第二电极被布置成使得各自的电极布局是 彼此的镜像。

    Optoelectronic Integrated Circuit Device and Communications Equipment Using Same
    38.
    发明申请
    Optoelectronic Integrated Circuit Device and Communications Equipment Using Same 失效
    光电集成电路设备及通讯设备

    公开(公告)号:US20090003761A1

    公开(公告)日:2009-01-01

    申请号:US11658587

    申请日:2004-09-29

    IPC分类号: G02B6/12

    摘要: A photoelectric integrated circuit device, in which photonic devices provided on the same substrate as the LSI are densely arranged along the four sides of the LSI, and characteristic degradation of the laser diode or photo detector due to heat generation can be prevented, furthermore optical wiring is easily performed on the board. A quadrilateral package substrate 11; an LSI package 13 mounted on the package substrate 11; photonic devices 12 mounted along two or more sides of the LSI package 13; first photonic devices electrically connected to I/O terminals disposed on one side of the LSI package 13; second photonic devices electrically connected to I/O terminals disposed on a different side of the LSI package 13; first optical waveguides for connecting between the optical signal I/O terminals of the first photonic devices and an external component or device; and second optical waveguides for connecting between the optical I/O terminals of the second photonic devices and an external component or device; wherein the first and second optical waveguides are terminated on the same side edge of the package substrate 11.

    摘要翻译: 可以防止其中设置在与LSI相同的基板上的光子器件沿着LSI的四侧密集布置的光电集成电路器件,并且可以防止由于发热而导致的激光二极管或光电检测器的特性劣化,此外,光布线 很容易在电路板上执行。 四边形封装基板11; 安装在封装基板11上的LSI封装13; 沿着LSI封装13的两侧或两侧安装的光子器件12; 电连接到设置在LSI封装13一侧的I / O端子的第一光子器件; 电连接到设置在LSI封装13的不同侧的I / O端子的第二光子器件; 用于连接第一光子器件的光信号I / O端子与外部元件或器件之间的第一光波导; 以及用于连接第二光子器件的光学I / O端子和外部部件或器件的第二光波导; 其中第一和第二光波导端接在封装基板11的同一侧边上。

    Avalanche photodiode
    39.
    发明授权
    Avalanche photodiode 有权
    雪崩光电二极管

    公开(公告)号:US07422919B2

    公开(公告)日:2008-09-09

    申请号:US11320750

    申请日:2005-12-30

    IPC分类号: H01L21/00

    CPC分类号: H01L31/1075

    摘要: An avalanche photodiode includes at least one crystal layer having a larger band-gap than that of an absorption layer formed by a composition or material different from that of the absorption layer formed on a junction interface between a compound semiconductor absorbing an optical signal and an Si multiplication layer, and the crystal layer may be intentionally doped with n or p type impurities to cancel electrical influences of the impurities containing oxides present on the junction interface of compound semiconductor and surface of Si.

    摘要翻译: 雪崩光电二极管包括至少一个具有比由吸收层形成的吸收层的组成或材料形成的吸收层更大的带隙的晶体层,所述组合物或材料与形成在吸收光信号的化合物半导体和Si 可以有意地用n或p型杂质掺杂晶体层,以消除存在于化合物半导体的结界面和Si表面上的存在的氧化物的杂质的电学影响。