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38 条记录 (耗时 0.03 秒)

    FREQUENCY SYNTHESIZER
    31.
    发明申请
    FREQUENCY SYNTHESIZER 审中-公开
    频率合成器

    公开(公告)号：US20130214836A1

    公开(公告)日：2013-08-22

    申请号：US13882827

    申请日：2011-04-19

    申请人： Kenichi Tajima ,  Hideyuki Nakamizo ,  Morishige Hieda

    发明人： Kenichi Tajima ,  Hideyuki Nakamizo ,  Morishige Hieda

    IPC分类号： H03L7/087

    CPC分类号： H03L7/087 ,  H03L7/085 ,  H03L7/113 ,  H03L7/197

    摘要： A phase difference detecting circuit 3 includes a sync detecting circuit 21 for detecting establishment of phase sync from phase difference signals D and U generated by a D-type flip-flop 13, and a switch 22 for supplying, unless the sync detecting circuit 21 detects the establishment of the phase sync, the control voltage Vt1 generated by the current-output-matching loop filter 15 to a voltage-controlled oscillator 4, and for supplying, when the sync detecting circuit 21 detects the establishment of the phase sync, the control voltage Vt2 generated by the voltage-output-matching loop filter 20 to the voltage-controlled oscillator 4.

    摘要翻译： 相位差检测电路3包括用于检测由D型触发器13产生的相位差信号D和U的相位同步建立的同步检测电路21以及用于提供的开关22，除非同步检测电路21检测到 建立相位同步，由电流输出匹配环路滤波器15产生的控制电压Vt1到压控振荡器4，并且当同步检测电路21检测到相位同步的建立时，提供控制 由电压 - 输出匹配环路滤波器20产生的电压Vt2到压控振荡器4。

    THERMOELECTRIC ELEMENT AND THERMOELECTRIC MODULE
    32.
    发明申请
    THERMOELECTRIC ELEMENT AND THERMOELECTRIC MODULE 审中-公开
    热电元件和热电模块

    公开(公告)号：US20130014796A1

    公开(公告)日：2013-01-17

    申请号：US13580559

    申请日：2011-02-28

    申请人： Kenichi Tajima

    发明人： Kenichi Tajima

    IPC分类号： H01L35/32

    CPC分类号： H01L35/08 ,  H01L35/32

    摘要： There are provided a thermoelectric element and a thermoelectric module that are manufacturable at low cost, suffer little from deterioration in thermoelectric characteristics even after a long period of use, and excel in durability. A thermoelectric element of the invention includes a columnar thermoelectric element main body, an insulating layer disposed on a periphery of the thermoelectric element main body, and a metal layer disposed on an end face of the thermoelectric element main body, the metal layer covering an end face of the insulating layer. Accordingly, a reaction with a solder is prevented and high thermoelectric characteristics is maintained even during a long period of use.

    摘要翻译： 提供了以低成本制造的热电元件和热电模块，即使在长时间使用后也几乎不受热电特性的劣化的影响，耐久性也优异。 本发明的热电元件包括​​柱状热电元件主体，设置在热电元件主体的周围的绝缘层和设置在热电元件主体的端面上的金属层，金属层覆盖端部 绝缘层的表面。 因此，防止与焊料的反应，即使在长时间使用中也保持高的热电特性。

    MULTIPORT AMPLIFIER AND WIRELESS DEVICE USING THE SAME
    34.
    发明申请
    MULTIPORT AMPLIFIER AND WIRELESS DEVICE USING THE SAME 有权
    多功能放大器和无线设备

    公开(公告)号：US20110267141A1

    公开(公告)日：2011-11-03

    申请号：US13142542

    申请日：2009-10-01

    申请人： Masatake Hangai ,  Kazutomi Mori ,  Kenichi Tajima ,  Yukihiro Tahara ,  Morishige Hieda

    发明人： Masatake Hangai ,  Kazutomi Mori ,  Kenichi Tajima ,  Yukihiro Tahara ,  Morishige Hieda

    IPC分类号： H03F1/00

    CPC分类号： H03F3/68 ,  H03F3/24 ,  H03F3/602 ,  H03F2200/204

    摘要： A multiport amplifier and a wireless device using the same are obtained in which isolation among output terminals is improved, whereby the quality of communication is improved. The multiport amplifier includes an input hybrid, an output hybrid, a plurality of amplifiers and a plurality of gain and phase control circuits that are inserted between the input hybrid and the output hybrid, a plurality of output coupling circuits that are inserted between the output hybrid and a plurality of output terminals so that they receive output extraction signals corresponding to a plurality of output signals, and a feedback circuit including a frequency selection circuit that is inserted between the plurality of output coupling circuits and the plurality of gain and phase control circuits.

    摘要翻译： 获得多端口放大器和使用该多端口放大器的无线装置，其中提高了输出端子之间的隔离，从而提高了通信质量。 多端口放大器包括插入在输入混合电路和输出混合电路之间的输入混合电路，输出混合电路，多个放大器和多个增益和相位控制电路，多个输出耦合电路插入在输出混合 以及多个输出端子，使得它们接收对应于多个输出信号的输出提取信号，以及包括插入在多个输出耦合电路和多个增益和相位控制电路之间的频率选择电路的反馈电路。

    Thermoelectric material, thermoelectric element, thermoelectric module and methods for manufacturing the same
    37.
    发明申请
    Thermoelectric material, thermoelectric element, thermoelectric module and methods for manufacturing the same 有权
    热电材料，热电元件，热电模块及其制造方法

    公开(公告)号：US20070095383A1

    公开(公告)日：2007-05-03

    申请号：US10570569

    申请日：2004-08-25

    申请人： Kenichi Tajima

    发明人： Kenichi Tajima

    IPC分类号： H01L35/16 ,  H01L35/20

    CPC分类号： H01L35/16 ,  C22C12/00 ,  H01L23/38 ,  H01L35/34 ,  H01L2924/0002 ,  H01L2924/00

    摘要： T provide an N type thermoelectric material having figure of the merit improved to be comparable to or higher than that of P type thermoelectric material, the N type thermoelectric material of the present invention contains at least one kind of Bi and Sb and at least one kind of Te and Se as main components, and contains bromine (Br) and iodine (I) to have carrier in such a concentration that corresponds to the contents of bromine (Br) and iodine (I).

    摘要翻译： T提供具有改善了与P型热电材料相当或更高的品质因数的N型热电材料，本发明的N型热电材料包含至少一种Bi和Sb以及至少一种 的Te和Se为主要成分，并含有溴（Br）和碘（I），其载体的浓度对应于溴（Br）和碘（I）的含量。

    Semiconductor integrated circuit device
    38.
    发明授权
    Semiconductor integrated circuit device 失效
    半导体集成电路器件

    公开(公告)号：US07193912B2

    公开(公告)日：2007-03-20

    申请号：US11136510

    申请日：2005-05-25

    申请人： Tadahiro Obara ,  Masatoshi Hasegawa ,  Yousuke Tanaka ,  Tomofumi Hokari ,  Kenichi Tajima

    发明人： Tadahiro Obara ,  Masatoshi Hasegawa ,  Yousuke Tanaka ,  Tomofumi Hokari ,  Kenichi Tajima

    IPC分类号： G11C7/00 ,  G11C7/02 ,  G11C11/34

    CPC分类号： G11C7/12 ,  G11C2207/005 ,  H01L27/105 ,  H01L27/10897

    摘要： A DRAM whose operation is sped up and power consumption is reduced is provided. A pair of precharge MOSFETs for supplying a precharge voltage to a pair of input/output nodes of a CMOS sense amplifier is provided; the pair of input/output nodes are connected to a complementary bit-line pair via a selection switch MOSFET; a first equalize MOSFET is provided between the complementary bit-line pair for equalizing them; a memory cell is provided between one of the complementary bit-line pair and a word line intersecting with it; gate insulators of the selection switch MOSFETs and first equalize MOSFET are formed by first film thickness; a gate insulator of the precharge MOSFET is formed by second film thickness thinner than the first film thickness; a precharge signal corresponding to a power supply voltage is supplied to the precharge MOSFET; and an equalize signal and a selection signal corresponding to a boost voltage are supplied to the first equalize MOSFET and the selection switch MOSFET, respectively.

    摘要翻译： 提供了其操作加快并且功耗降低的DRAM。 提供一对用于向CMOS读出放大器的一对输入/输出节点提供预充电电压的预充电MOSFET; 一对输入/输出节点经由选择开关MOSFET连接到互补位线对; 在互补位线对之间提供第一均衡MOSFET以使它们均衡; 在互补位线对之一和与其相交的字线之间提供存储单元; 选择开关MOSFET和第一均衡MOSFET的栅极绝缘体由第一膜厚度形成; 预充电MOSFET的栅极绝缘体由比第一膜厚度薄的第二膜厚形成; 对应于电源电压的预充电信号被提供给预充电MOSFET; 并且将均衡信号和对应于升压电压的选择信号分别提供给第一均衡MOSFET和选择开关MOSFET。