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77 条记录 (耗时 0.029 秒)

    Electrostatic chuck device
    33.
    发明授权
    Electrostatic chuck device 有权
    静电吸盘装置

    公开(公告)号：US07623334B2

    公开(公告)日：2009-11-24

    申请号：US10462765

    申请日：2003-06-17

    申请人： Shigeru Mizuno ,  Masahito Ishihara ,  Sunil Wickramanayaka ,  Naoki Miyazaki

    发明人： Shigeru Mizuno ,  Masahito Ishihara ,  Sunil Wickramanayaka ,  Naoki Miyazaki

    IPC分类号： H01T23/00

    CPC分类号： H01L21/6875 ,  H01L21/6833 ,  H02N13/00

    摘要： An electrostatic chuck device provided with a dielectric plate with a surface embossed to give it a plurality of projections, an electrode, and an external power source, wherein substrate supporting surfaces of the plurality of projections are covered by conductor wiring and the conductor wiring electrically connects the substrate supporting surfaces of the plurality of projections. At the time of substrate processing, when the embossed projections contact the back of the substrate, the back of the substrate and the conductor wiring is made the same in potential due to the migration of the charges, the generation of force between the back of the substrate and the conductor wiring being in contact with the same is prevented, and a rubbing state between the two is prevented. Due to this, the electrostatic chuck device reduces the generation of particles, easily and stably removes and conveys substrates, and realizes a high yield and system operating rate.

    摘要翻译： 一种静电吸盘装置，其具有表面压花的电介质板，以给予多个突起，电极和外部电源，其中所述多个突起的基板支撑表面被导体布线覆盖，并且所述导体布线电连接 多个突起的基板支撑表面。 在基板处理时，当压花突起接触基板的背面时，由于电荷的迁移，基板的背面和导体布线的潜力也相同，因此在 基板和与其接触的导体布线被防止，并且防止了两者之间的摩擦状态。 由此，静电卡盘装置减少了颗粒的产生，容易且稳定地除去和输送基板，实现了高产率和系统运行速度。

    Plasma processing apparatus
    34.
    发明授权
    Plasma processing apparatus 有权
    等离子体处理装置

    公开(公告)号：US06199505B1

    公开(公告)日：2001-03-13

    申请号：US09250402

    申请日：1999-02-16

    申请人： Hisaaki Sato ,  Tsutomu Tsukada ,  Shigeru Mizuno ,  Nobuaki Tsuchiya

    发明人： Hisaaki Sato ,  Tsutomu Tsukada ,  Shigeru Mizuno ,  Nobuaki Tsuchiya

    IPC分类号： C23C16509

    CPC分类号： H01J37/32082 ,  H01J37/32183

    摘要： A plasma processing apparatus includes a cathode 54 having a large diameter part 56 and a long thin small diameter part 58, and the upper end surface of the large diameter part 56 faces the plasma forming space 76. The substrate 66 which is to be processed is mounted on the upper end surface of the large diameter part 56. The lower end of the small diameter part 58 is connected via the matching circuit 60 to the high frequency power source 62. The transmission path within the chamber comprises a large diameter coaxial line, a small diameter coaxial line and a radial line which connects them. The large diameter coaxial line includes the large diameter part 56, the first side wall 42 and the insulator 70. The radial line includes the lower surface of the large diameter part 56, the upper surface of the bottom plate 46 and the gap 72 between them. The small diameter coaxial line includes the small diameter part 58, the second side wall 68 and the gap 74. Appropriate impedance matching is achieved between the two coaxial lines and the radial line.

    摘要翻译： 等离子体处理装置包括具有大直径部分56和长薄小直径部分58的阴极54，并且大直径部分56的上端表面面对等离子体形成空间76.待处理的基板66是 安装在大直径部分56的上端表面上。小直径部分58的下端经由匹配电路60连接到高频电源62.腔室内的传输路径包括大直径同轴线， 小直径同轴线和连接它们的径向线。 大直径同轴线包括大直径部分56，第一侧壁42和绝缘体70.径向线包括大直径部分56的下表面，底板46的上表面和它们之间的间隙72 。 小直径同轴线包括小直径部分58，第二侧壁68和间隙74.在两个同轴线和径向线之间实现适当的阻抗匹配。

    Heater for CVD apparatus
    35.
    发明授权
    Heater for CVD apparatus 失效
    CVD装置加热器

    公开(公告)号：US5766363A

    公开(公告)日：1998-06-16

    申请号：US634873

    申请日：1996-04-19

    申请人： Shigeru Mizuno ,  Kazuhito Watanabe ,  Takanori Yoshimura ,  Nobuyuki Takahashi

    发明人： Shigeru Mizuno ,  Kazuhito Watanabe ,  Takanori Yoshimura ,  Nobuyuki Takahashi

    IPC分类号： H05B3/14 ,  C23C16/44 ,  C23C16/455 ,  C23C16/458 ,  C23C16/46 ,  H01L21/205 ,  H01L21/285 ,  C23C16/00

    CPC分类号： C23C16/45521 ,  C23C16/4585 ,  C23C16/46

    摘要： A heater is used in a CVD apparatus. In the CVD apparatus, reactive gas is supplied through a reactive gas supply plate to a substrate on a substrate holder to deposit a film on the substrate, and a purge gas supply passage is formed by placing a shield mechanism around the substrate holder, the shield mechanism including a ring plate disposed close to the outer periphery of the substrate. During film deposition, purge gas supplied through the purge gas supply passage is blown off from a clearance between the substrate and the ring plate, thereby preventing a film from being deposited on the rear surface of the substrate or the like. A heating element is arranged in a space in the purge gas supply passage close to but not contacting the substrate holder. The heating element is preferably a ceramic heater.

    摘要翻译： 在CVD装置中使用加热器。 在CVD装置中，反应性气体通过反应性气体供应板供应到衬底保持器上的衬底以在衬底上沉积膜，并且通过将屏蔽机构放置在衬底保持器周围形成吹扫气体供给通道，屏蔽 机构包括靠近基板的外周设置的环板。 在膜沉积期间，通过吹扫气体供应通道供应的吹扫气体从基板和环板之间的间隙吹出，从而防止膜沉积在基板的后表面等上。 加热元件布置在靠近但不接触衬底保持器的吹扫气体供给通道的空间中。 加热元件优选为陶瓷加热器。

    Low pressure vapor phase growth apparatus
    36.
    发明授权
    Low pressure vapor phase growth apparatus 失效
    低压气相生长装置

    公开(公告)号：US5033407A

    公开(公告)日：1991-07-23

    申请号：US477255

    申请日：1990-02-07

    申请人： Shigeru Mizuno ,  Isamu Morisako

    发明人： Shigeru Mizuno ,  Isamu Morisako

    IPC分类号： C23C16/46 ,  C23C16/44 ,  C23C16/48 ,  H01L21/205

    CPC分类号： C23C16/481

    摘要： A low pressure vapor phase growth apparatus is disclosed. The apparatus comprises a window made of a light-transmissive material, a gas feeder for feeding a reactive gas, an exhauster for pumping gases out after a chemical reaction, a lamp for effecting radiant heating of a substrate with a radiation emitted therefrom and transmitted through said light-transmissive window, and a cooling mechanism for forcibly cooling said light-transmissive window. The substrate and the light-transmissive window are maintained in no mutual contact with a gap therebetween having a width of at most the mean free path of a gas existing in the gap. The reactive gas fed through the gas feeder undergoes the chemical reaction on the obverse surface of the substrate to form a thin film thereon.

    Print-head of a dot-printer
    37.
    发明授权
    Print-head of a dot-printer 失效
    点印机的打印头

    公开(公告)号：US4411538A

    公开(公告)日：1983-10-25

    申请号：US290300

    申请日：1981-08-05

    申请人： Kiyomitsu Asano ,  Toshikatsu Kondo ,  Shigeru Mizuno

    发明人： Kiyomitsu Asano ,  Toshikatsu Kondo ,  Shigeru Mizuno

    IPC分类号： B41J2/26 ,  B41J2/28 ,  B41J3/12

    CPC分类号： B41J2/28

    摘要： A print head adapted to be used for a dot-printer. A novel support device is disposed in the print head for pivotally supporting one end of each of a plurality of armatures on a support member. The support device in this invention comprises; (a) a leaf spring disposed longitudinally of the armature, secured at one end thereof to the support member and at the other end thereof to the armature, and provided in a middle portion thereof with a through-bore, and (b) a wire spring extending through the through-bore in the leaf spring at a right angle thereto, and secured at one end thereof to the support member and at the other end thereof to the armature.

    摘要翻译： 适用于点阵式打印机的打印头。 一种新颖的支撑装置设置在打印头中，用于将多个电枢中的每一个的一端枢转地支撑在支撑构件上。 本发明的支撑装置包括： （a）沿电枢纵向设置的板簧，其一端固定在支撑构件上，另一端固定在电枢上，并在其中间部分设有通孔，（b）电线 弹簧以与其成直角的方式延伸穿过板簧中的通孔，并且其一端固定在支撑构件上，另一端固定在电枢上。

    Electrostatic chuck device
    39.
    发明申请
    Electrostatic chuck device 有权

    公开(公告)号：US20090059462A1

    公开(公告)日：2009-03-05

    申请号：US12289207

    申请日：2008-10-22

    申请人： Shigeru Mizuno ,  Masahito Ishihara ,  Sunil Wickramanayaka ,  Naoki Miyazaki

    发明人： Shigeru Mizuno ,  Masahito Ishihara ,  Sunil Wickramanayaka ,  Naoki Miyazaki

    IPC分类号： H01L21/683

    CPC分类号： H01L21/6875 ,  H01L21/6833 ,  H02N13/00

    摘要： An electrostatic chuck device provided with a dielectric plate with a surface embossed to give it a plurality of projections, an electrode, and an external power source, wherein substrate supporting surfaces of the plurality of projections are covered by conductor wiring and the conductor wiring electrically connects the substrate supporting surfaces of the plurality of projections. At the time of substrate processing, when the embossed projections contact the back of the substrate, the back of the substrate and the conductor wiring is made the same in potential due to the migration of the charges, the generation of force between the back of the substrate and the conductor wiring being in contact with the same is prevented, and a rubbing state between the two is prevented. Due to this, the electrostatic chuck device reduces the generation of particles, easily and stably removes and conveys substrates, and realizes a high yield and system operating rate.