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31.发明申请公开(公告)号：US20090071940A1
公开(公告)日：2009-03-19
申请号：US12208992
申请日：2008-09-11
CPC分类号： H01L21/67034 , B05C11/08 , B05C13/02 , B05D3/0406 , G03F7/3028 , H01L21/67028 , H01L21/67051 , Y10S134/902
摘要： After a development liquid on a substrate is washed away with a rinse liquid, the rotational speed of the substrate is reduced, so that a liquid layer of the rinse liquid is formed over a top surface of the substrate. Thereafter, the rotational speed of the substrate is increased. The increase in the rotational speed of the substrate causes a centrifugal force to be slightly greater than tension, thereby causing the liquid layer to be held on the substrate with the thickness thereof in its peripheral portion increased and the thickness thereof at the center thereof decreased. Then, gas is discharged toward the center of the liquid layer from a gas supply nozzle, so that a hole is formed at the center of the liquid layer. This causes tension that is balanced with a centrifugal force exerted on the peripheral portion of the liquid layer to disappear. Furthermore, the rotational speed of the substrate is further increased while the gas is discharged. Thus, the liquid layer moves outward from the substrate.
摘要翻译： 在用冲洗液冲洗衬底上的显影液后，减小基片的旋转速度，从而在衬底的顶表面上形成漂洗液体的液体层。 此后，基板的旋转速度增加。 基板的旋转速度的增加使离心力略大于张力，从而使液体层保持在基板的周边部分的厚度增加，其中心部的厚度减小。 然后，气体从气体供给喷嘴向液体中心排出，从而在液体层的中心形成有孔。 这导致张力被平衡，施加在液体层的周边部分上的离心力消失。 此外，在排出气体的同时，基板的旋转速度进一步提高。 因此，液体层从基板向外移动。
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公开(公告)号：US20090073394A1
公开(公告)日：2009-03-19
申请号：US12208925
申请日：2008-09-11
CPC分类号： H01L21/67034 , H01L21/67051 , H01L21/67225
摘要： After a substrate is cleaned, a liquid supply nozzle moves outward from above the center of the substrate while discharging a rinse liquid with the substrate rotated. In this case, a drying region where no rinse liquid exists expands on the substrate. When the liquid supply nozzle moves to above a peripheral portion of the substrate, the rotational speed of the substrate is reduced. The movement speed of the liquid supply nozzle is maintained as it is. Thereafter, the discharge of the rinse liquid is stopped while the liquid supply nozzle moves outward from the substrate. Thus, the drying region spreads over the whole substrate so that the substrate is dried.
摘要翻译： 在清洁基板之后，液体供应喷嘴从衬底的中心向外移动，同时在衬底旋转的同时排出冲洗液体。 在这种情况下，不存在冲洗液的干燥区域在基板上膨胀。 当液体供给喷嘴移动到基板的周边部分上方时，基板的旋转速度降低。 液体供应喷嘴的运动速度保持原样。 此后，在液体供给喷嘴从基板向外移动的同时停止冲洗液的排出。 因此，干燥区域遍及整个基板，使得基板被干燥。
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公开(公告)号：US10134610B2
公开(公告)日：2018-11-20
申请号：US12208992
申请日：2008-09-11
摘要： After a development liquid on a substrate is washed away with a rinse liquid, the rotational speed of the substrate is reduced, so that a liquid layer of the rinse liquid is formed over a top surface of the substrate. Thereafter, the rotational speed of the substrate is increased. The increase in the rotational speed of the substrate causes a centrifugal force to be slightly greater than tension, thereby causing the liquid layer to be held on the substrate with the thickness thereof in its peripheral portion increased and the thickness thereof at the center thereof decreased. Then, gas is discharged toward the center of the liquid layer from a gas supply nozzle, so that a hole is formed at the center of the liquid layer. This causes tension that is balanced with a centrifugal force exerted on the peripheral portion of the liquid layer to disappear. Furthermore, the rotational speed of the substrate is further increased while the gas is discharged. Thus, the liquid layer moves outward from the substrate.
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公开(公告)号：US08894775B2
公开(公告)日：2014-11-25
申请号：US12209039
申请日：2008-09-11
CPC分类号： H01L21/67051
摘要： After a substrate is cleaned, a liquid layer of a rinse liquid is formed so as to cover one surface of the substrate. Then, a liquid supply nozzle moves outward from above the center of the substrate. The liquid supply nozzle is stopped once at the time point where it moves by a predetermined distance from above the center of the substrate. In this time period, the liquid layer is divided within a thin layer region by a centrifugal force, so that a drying core is formed at the center of the liquid layer. Thereafter, the liquid supply nozzle moves outward again, so that a drying region where no rinse liquid exists expands on the substrate with the drying core as its starting point.
摘要翻译： 在清洁基板之后，形成冲洗液体的液体层以覆盖基板的一个表面。 然后，液体供给喷嘴从基板的中心的上方向外侧移动。 液体供给喷嘴在从基板的中心上方移动预定距离的时间点停止一次。 在该时间段内，通过离心力将液体层分割成薄层区域，从而在液体层的中央形成干燥芯。 此后，液体供给喷嘴再次向外移动，使得在干燥芯作为起点的基板上不存在冲洗液体的干燥区域膨胀。
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35.发明授权Substrate processing apparatus with multi-speed drying having rinse liquid supplier that moves from center of rotated substrate to its periphery and stops temporarily so that a drying core can form 有权具有多速干燥的基板处理装置，具有从旋转基板的中心向其周边移动的冲洗液供给体，暂时停止，从而干燥芯可以形成公开(公告)号：US08218124B2
公开(公告)日：2012-07-10
申请号：US12208925
申请日：2008-09-11
IPC分类号： G03B27/52
CPC分类号： H01L21/67034 , H01L21/67051 , H01L21/67225
摘要： After a substrate is cleaned, a liquid supply nozzle moves outward from above the center of the substrate while discharging a rinse liquid with the substrate rotated. In this case, a drying region where no rinse liquid exists expands on the substrate. When the liquid supply nozzle moves to above a peripheral portion of the substrate, the rotational speed of the substrate is reduced. The movement speed of the liquid supply nozzle is maintained as it is. Thereafter, the discharge of the rinse liquid is stopped while the liquid supply nozzle moves outward from the substrate. Thus, the drying region spreads over the whole substrate so that the substrate is dried.
摘要翻译： 在清洁基板之后，液体供应喷嘴从衬底的中心向外移动，同时在衬底旋转的同时排出冲洗液体。 在这种情况下，不存在冲洗液的干燥区域在基板上膨胀。 当液体供给喷嘴移动到基板的周边部分上方时，基板的旋转速度降低。 液体供应喷嘴的运动速度保持原样。 此后，在液体供给喷嘴从基板向外移动的同时停止冲洗液的排出。 因此，干燥区域遍及整个基板，使得基板被干燥。
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36.发明申请METHOD AND SYSTEM FOR REMOVAL OF FILMS FROM PERIPHERAL PORTIONS OF A SUBSTRATE 审中-公开从衬底的外围部分去除膜的方法和系统公开(公告)号：US20120037593A1
公开(公告)日：2012-02-16
申请号：US13284603
申请日：2011-10-28
IPC分类号： C23F1/02
CPC分类号： H01L21/31058 , G03F7/168 , H01L21/0276 , H01L21/6708 , H01L21/67259 , H01L21/67706
摘要： A substrate processing apparatus includes an anti-reflection film processing block, a resist film processing block, and a resist cover film processing block. In the processing blocks, an anti-reflection film, a resist film, and a resist cover film are formed on a substrate, respectively. Additionally, a film formed at a peripheral edge of the substrate is removed. The film formed at the peripheral edge of the substrate is removed by supplying a removal liquid capable of dissolving and removing the film to the peripheral edge of the substrate during rotation. When the peripheral edge of the film is removed, the position of the substrate is corrected such that the center of the substrate coincides with the center of a rotation shaft.
摘要翻译： 基板处理装置包括防反射膜处理块，抗蚀剂膜处理块和抗蚀剂覆盖膜处理块。 在处理块中，分别在基板上形成抗反射膜，抗蚀剂膜和抗蚀剂覆盖膜。 此外，除去在基板的周缘形成的膜。 通过在旋转期间通过提供能够将膜溶解并除去膜的周边边缘的去除液体来除去形成在基板的周缘的膜。 当去除膜的外围边缘时，校正基板的位置使得基板的中心与旋转轴的中心重合。
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公开(公告)号：US20090074402A1
公开(公告)日：2009-03-19
申请号：US12209039
申请日：2008-09-11
IPC分类号： G03D5/00
CPC分类号： H01L21/67051
摘要： After a substrate is cleaned, a liquid layer of a rinse liquid is formed so as to cover one surface of the substrate. Then, a liquid supply nozzle moves outward from above the center of the substrate. The liquid supply nozzle is stopped once at the time point where it moves by a predetermined distance from above the center of the substrate. In this time period, the liquid layer is divided within a thin layer region by a centrifugal force, so that a drying core is formed at the center of the liquid layer. Thereafter, the liquid supply nozzle moves outward again, so that a drying region where no rinse liquid exists expands on the substrate with the drying core as its starting point.
摘要翻译： 在清洁基板之后，形成冲洗液体的液体层以覆盖基板的一个表面。 然后，液体供给喷嘴从基板的中心的上方向外侧移动。 液体供给喷嘴在从基板的中心上方移动预定距离的时间点停止一次。 在该时间段内，通过离心力将液体层分割成薄层区域，从而在液体层的中央形成干燥芯。 此后，液体供给喷嘴再次向外移动，使得在干燥芯作为起点的基板上不存在冲洗液体的干燥区域膨胀。
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38.发明申请Method and system for removal of films from peripheral portions of a substrate 审中-公开从基板的周边部分去除膜的方法和系统公开(公告)号：US20080226830A1
公开(公告)日：2008-09-18
申请号：US11897965
申请日：2007-08-31
CPC分类号： H01L21/31058 , G03F7/168 , H01L21/0276 , H01L21/6708 , H01L21/67259 , H01L21/67706
摘要： A substrate processing apparatus includes an anti-reflection film processing block, a resist film processing block, and a resist cover film processing block. In the processing blocks, an anti-reflection film, a resist film, and a resist cover film are formed on a substrate, respectively. Additionally, a film formed at a peripheral edge of the substrate is removed. The film formed at the peripheral edge of the substrate is removed by supplying a removal liquid capable of dissolving and removing the film to the peripheral edge of the substrate during rotation. When the peripheral edge of the film is removed, the position of the substrate is corrected such that the center of the substrate coincides with the center of a rotation shaft.
摘要翻译： 基板处理装置包括防反射膜处理块，抗蚀剂膜处理块和抗蚀剂覆盖膜处理块。 在处理块中，分别在基板上形成抗反射膜，抗蚀剂膜和抗蚀剂覆盖膜。 此外，除去在基板的周缘形成的膜。 通过在旋转期间通过提供能够将膜溶解并除去膜的周边边缘的去除液体来除去形成在基板的周缘的膜。 当去除膜的外围边缘时，校正基板的位置使得基板的中心与旋转轴的中心重合。
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公开(公告)号：US08034190B2
公开(公告)日：2011-10-11
申请号：US12719788
申请日：2010-03-08
申请人： Shuichi Yasuda , Masashi Kanaoka , Koji Kaneyama , Tadashi Miyagi , Kasuhito Shigemori , Toru Asano , Akihiro Hisai , Hiroshi Kobayashi , Tsuyoshi Okumura
发明人： Shuichi Yasuda , Masashi Kanaoka , Koji Kaneyama , Tadashi Miyagi , Kasuhito Shigemori , Toru Asano , Akihiro Hisai , Hiroshi Kobayashi , Tsuyoshi Okumura
CPC分类号： G03F7/70991 , G03F7/7075 , Y10S438/906 , Y10S438/908
摘要： A substrate processing apparatus comprises an indexer block, an anti-reflection film processing block, a resist film processing block, a development processing block, and an interface block. An exposure device is arranged adjacent to the interface block. The interface block comprises washing processing units and an interface transport mechanism. Before a substrate is subjected to exposure processing by the exposure device, the substrate is transported to a washing processing unit by the interface transport mechanism. The substrate is washed and dried by the washing processing unit.
摘要翻译： 基板处理装置包括分度器块，抗反射膜处理块，抗蚀剂膜处理块，显影处理块和界面块。 曝光装置设置在接口块附近。 接口块包括洗涤处理单元和接口传送机构。 在通过曝光装置对基板进行曝光处理之前，通过界面传送机构将基板输送到洗涤处理单元。 洗涤基体并通过洗涤处理单元干燥。
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公开(公告)号：US20060291854A1
公开(公告)日：2006-12-28
申请号：US11474614
申请日：2006-06-21
IPC分类号： G03D5/00
CPC分类号： G03D7/00 , G03F7/11 , G03F7/2041 , H01L21/0206 , H01L21/31116 , H01L21/31138 , H01L21/31144 , H01L21/67034 , H01L21/67051 , H01L21/67173 , H01L21/67178 , H01L21/67225 , H01L21/67742
摘要： A substrate processing apparatus comprises an indexer block, an anti-reflection film processing block, a resist film processing block, a development processing block, a resist cover film processing block, a resist cover film removal block, a cleaning/drying processing block and an interface block. These blocks are arranged in the substrate processing apparatus in the above order. An exposure device is arranged adjacent to the interface block of the substrate processing apparatus. A hydrophobic processing unit is arranged in the resist cover film processing block and applies hydrophobic processing to the substrate before exposure processing.
摘要翻译： 基板处理装置包括分度器块，抗反射膜处理块，抗蚀剂膜处理块，显影处理块，抗蚀剂覆盖膜处理块，抗蚀剂覆盖膜去除块，清洁/干燥处理块和 界面块 这些块按照上述顺序排列在基板处理装置中。 曝光装置被布置成与基板处理装置的界面块相邻。 在抗蚀剂覆盖膜处理块中设置疏水处理单元，在曝光处理之前对基板进行疏水处理。
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