公开(公告)号：US07510624B2

公开(公告)日：2009-03-31

申请号：US11016166

申请日：2004-12-17

申请人： Qiwei Liang ,  Siqing Lu

发明人： Qiwei Liang ,  Siqing Lu

IPC分类号： H01L21/306 ,  C23C16/455 ,  C23C16/00

CPC分类号： C23C16/45563 ,  C23C16/507 ,  H01J37/3244 ,  H01J37/32449

摘要： A gas distributor for use in a semiconductor processing chamber is provided. The gas distributor comprises a gas inlet, a gas outlet, and a stem section having a spiral thread. The gas distributor further comprises a body having a gas deflecting surface that extends radially outward away from the stem section and a lower face disposed on the opposite side of the body from the gas deflecting surface, a lateral seat disposed between the spiral thread and the gas deflecting surface, and a gas passageway that extends from the gas inlet through the stem section and body to the gas outlet. In a specific embodiment, the lateral seat is adapted to hold a sealing member.

摘要翻译： 提供一种用于半导体处理室的气体分配器。 气体分配器包括气体入口，气体出口和具有螺旋线的杆段。 所述气体分配器还包括具有气体偏转表面的主体，所述气体偏转表面从所述杆部分径向向外延伸，以及设置在所述主体的与所述气体偏转表面相反的一侧的下表面，设置在所述螺旋线和气体之间的侧面座 偏转表面，以及从气体入口通过阀杆部分和主体延伸到气体出口的气体通道。 在具体实施例中，侧座适于保持密封构件。

公开(公告)号：US20090031955A1

公开(公告)日：2009-02-05

申请号：US11830589

申请日：2007-07-30

申请人： Siqing Lu ,  Balaji Chandrasekaran ,  Paul Edward Gee ,  Nitin K. Ingle ,  Dmitry Lubomirsky ,  Zheng Yuan ,  Ellie Y. Yieh

发明人： Siqing Lu ,  Balaji Chandrasekaran ,  Paul Edward Gee ,  Nitin K. Ingle ,  Dmitry Lubomirsky ,  Zheng Yuan ,  Ellie Y. Yieh

IPC分类号： C23C16/00 ,  B23B31/30

CPC分类号： C23C16/4586 ,  C23C16/4584 ,  Y10T279/11

摘要： Embodiments of a vacuum chuck having an axisymmetrical and/or more uniform thermal profile are provided herein. In some embodiments, a vacuum chuck includes a body having a support surface for supporting a substrate thereupon; a plurality of axisymmetrically arranged grooves formed in the support surface, at least some of the grooves intersecting; and a plurality of chucking holes formed through the body and within the grooves, the chucking holes for fluidly coupling the grooves to a vacuum source during operation, wherein the chucking holes are disposed in non-intersecting portions of the grooves.

摘要翻译： 具有轴对称和/或更均匀的热分布的真空吸盘的实施例在此提供。 在一些实施例中，真空卡盘包括具有用于支撑基板的支撑表面的主体; 形成在支撑表面中的多个轴对称布置的槽，至少一些槽相交; 以及在所述槽内形成的多个夹持孔，所述夹持孔用于在操作期间将所述槽流体耦合到真空源，其中所述夹紧孔设置在所述槽的非交叉部分中。

公开(公告)号：US20070029046A1

公开(公告)日：2007-02-08

申请号：US11196850

申请日：2005-08-04

申请人： Shijian Li ,  Siqing Lu ,  Irene Chou ,  Young Lee ,  Tetsuya Ishikawa

发明人： Shijian Li ,  Siqing Lu ,  Irene Chou ,  Young Lee ,  Tetsuya Ishikawa

IPC分类号： C23F1/00 ,  H01L21/20 ,  C23C16/00

CPC分类号： C23C16/4581 ,  C23C16/505 ,  H01J37/321 ,  H01J37/32706 ,  H01J2237/2001 ,  H01J2237/3321 ,  H01L21/67069 ,  H01L21/67248 ,  H01L21/68742 ,  H01L21/6875 ,  H01L21/68757

摘要： A substrate processing system is provided. A housing defines a processing chamber. A plasma-generating system is operatively coupled to the processing chamber. A substrate support member is disposed within the processing chamber and configured to hold a substrate during substrate processing. A ceramic insert is disposed over the substrate support member such that the ceramic insert is disposed between the substrate support member and the substrate during substrate processing. A gas-delivery system is configured to introduce gases into the processing chamber. A controller controls the plasma-generating system and the gas-delivery system.

摘要翻译： 提供了基板处理系统。 壳体限定处理室。 等离子体产生系统可操作地耦合到处理室。 衬底支撑构件设置在处理室内并且构造成在衬底处理期间保持衬底。 陶瓷插入件设置在衬底支撑构件上方，使得陶瓷插入件在衬底处理期间设置在衬底支撑构件和衬底之间。 气体输送系统构造成将气体引入处理室。 控制器控制等离子体产生系统和气体输送系统。

公开(公告)号：US20060075967A1

公开(公告)日：2006-04-13

申请号：US10963030

申请日：2004-10-12

申请人： Siqing Lu ,  Canfeng Lai ,  Qiwei Liang ,  Maolin Long ,  Irene Chou ,  Jason Bloking ,  Steven Kim ,  Ellie Yieh

发明人： Siqing Lu ,  Canfeng Lai ,  Qiwei Liang ,  Maolin Long ,  Irene Chou ,  Jason Bloking ,  Steven Kim ,  Ellie Yieh

IPC分类号： H01L21/20 ,  C23C16/00

CPC分类号： H01J37/321 ,  C23C16/045 ,  C23C16/401 ,  C23C16/507 ,  H05B6/26

摘要： A substrate processing system is provided with a housing defining a process chamber. A substrate holder is disposed within the process chamber and configured to support a substrate during substrate processing. A gas delivery system is configured to introduce a gas into the process chamber. A pressure-control system is provided for maintaining a selected pressure within the process chamber. A high-density-plasma generating system is operatively coupled with the process chamber and includes a coil for inductively coupling energy into a plasma formed within the process chamber. It also includes magneto-dielectric material proximate the coil for concentrating a magnetic field generated by the coil. A controller is also provided for controlling the gas-delivery system, the pressure-control system, and the high-density-plasma generating system.

摘要翻译： 衬底处理系统设置有限定处理室的壳体。 衬底保持器设置在处理室内并且构造成在衬底处理期间支撑衬底。 气体输送系统构造成将气体引入处理室。 提供压力控制系统以保持处理室内的选定压力。 高密度等离子体发生系统与处理室可操作地耦合，并且包括用于将能量感应耦合到处理室内形成的等离子体中的线圈。 它还包括靠近线圈的磁电介质材料，用于集中由线圈产生的磁场。 还提供用于控制气体输送系统，压力控制系统和高密度等离子体产生系统的控制器。