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    LOW TEMPERATURE SACVD PROCESSES FOR PATTERN LOADING APPLICATIONS
    3.
    发明申请
    LOW TEMPERATURE SACVD PROCESSES FOR PATTERN LOADING APPLICATIONS 审中-公开
    用于模式加载应用的低温SACVD工艺

    公开(公告)号：US20080311754A1

    公开(公告)日：2008-12-18

    申请号：US12137372

    申请日：2008-06-11

    申请人： BALAJI CHANDRASEKARAN ,  Douglas E. Manning ,  Nitin K. Ingle ,  Rong Pan ,  Zheng Yuan ,  Sidharth Bhatia

    发明人： BALAJI CHANDRASEKARAN ,  Douglas E. Manning ,  Nitin K. Ingle ,  Rong Pan ,  Zheng Yuan ,  Sidharth Bhatia

    IPC分类号： H01L21/311 ,  H01L21/31

    CPC分类号： H01L21/02164 ,  C23C16/042 ,  C23C16/402 ,  H01L21/02216 ,  H01L21/02271 ,  H01L21/28132 ,  H01L21/31604

    摘要： A method of improving pattern loading in a deposition of a silicon oxide film is described. The method may include providing a deposition substrate to a deposition chamber, and adjusting a temperature of the deposition substrate to about 250° C. to about 325° C. An ozone containing gas may be introduced to the deposition chamber at a first flow rate of about 1.5 slm to about 3 slm, where the ozone concentration in the gas is about 6% to about 12%, by wt. TEOS may also be introduced to the deposition chamber at a second flow rate of about 2500 mgm to about 4500 mgm. The deposition rate of the silicon oxide film is controlled by a reaction rate of a reaction of the ozone and TEOS at a deposition surface of the substrate.

    摘要翻译： 描述了在氧化硅膜沉积中改进图案加载的方法。 该方法可以包括向沉积室提供沉积衬底，以及将沉积衬底的温度调节到约250℃至约325℃。含臭氧气体可以以第一流速 约1.5slm至约3slm，其中气体中的臭氧浓度为约6重量％至约12重量％。 TEOS还可以以约2500mgm至约4500mgm的第二流速引入沉积室。 氧化硅膜的沉积速率由基板的沉积表面处的臭氧与TEOS的反应的反应速率控制。