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231 条记录 (耗时 0.028 秒)

    Method for fabricating film bulk acoustic resonators to achieve high-Q and low loss
    31.
    发明授权
    Method for fabricating film bulk acoustic resonators to achieve high-Q and low loss 有权
    制造薄膜体声共振器以实现高Q和低损耗的方法

    公开(公告)号：US06662419B2

    公开(公告)日：2003-12-16

    申请号：US10023594

    申请日：2001-12-17

    申请人： Li-Peng Wang ,  Qing Ma ,  Valluri Rao

    发明人： Li-Peng Wang ,  Qing Ma ,  Valluri Rao

    IPC分类号： H04R1700

    CPC分类号： H03H9/174 ,  H03H3/02 ,  H03H2003/023 ,  Y10T29/42 ,  Y10T29/49005 ,  Y10T29/4908 ,  Y10T29/49156

    摘要： A method for forming film bulk acoustic resonator devices includes depositing a first portion of a first electrode, and a piezoelectric layer onto the substrate. The method includes removing a portion of the substrate under the piezoelectric layer and under the portion of the first electrode, and depositing a second portion of the first electrode onto the piezoelectric film layer and onto the first portion of the first electrode.

    摘要翻译： 一种用于形成膜体声波谐振器装置的方法包括将第一电极的第一部分和压电层沉积到衬底上。 该方法包括：在压电层下方和第一电极的部分之下去除衬底的一部分，并将第一电极的第二部分沉积到压电膜层上并且沉积到第一电极的第一部分上。

    Ferroelectric memory and method in which polarity of domain of ferroelectric memory is determined using ratio of currents
    33.
    发明授权
    Ferroelectric memory and method in which polarity of domain of ferroelectric memory is determined using ratio of currents 有权
    铁电存储器和其中使用电流比确定铁电存储器的极性的方法

    公开(公告)号：US08068405B2

    公开(公告)日：2011-11-29

    申请号：US11772194

    申请日：2007-06-30

    申请人： Qing Ma ,  Valluri R. Rao ,  Li-Peng Wang ,  Nathan Franklin

    发明人： Qing Ma ,  Valluri R. Rao ,  Li-Peng Wang ,  Nathan Franklin

    IPC分类号： G11B9/02

    CPC分类号： G11C11/22

    摘要： Methods and arrangements for data storage are discussed. Embodiments include applying a first voltage between a tip and an electrode, thereby forming a polarized domain in a ferroelectric material between 1 nanometer (nm) and 50 nm in thickness. The embodiments may also include applying another voltage through the tip, thereby generating a current responsive to an orientation of the polarized domain. The embodiments may also include measuring the current and determining the orientation of the polarized domain, based upon the measuring.

    摘要翻译： 讨论了数据存储的方法和布置。 实施例包括在尖端和电极之间施加第一电压，从而在厚度在1nm（nm）到50nm之间的铁电材料中形成极化畴。 实施例还可以包括通过尖端施加另一电压，从而产生响应于偏振域的取向的电流。 实施例还可以包括基于测量来测量电流并确定极化畴的取向。

    Ferroelectric layer with domains stabilized by strain
    35.
    发明授权
    Ferroelectric layer with domains stabilized by strain 有权
    具有由菌株稳定的结构域的铁电层

    公开(公告)号：US07867786B2

    公开(公告)日：2011-01-11

    申请号：US11958826

    申请日：2007-12-18

    申请人： Qing Ma ,  Li-Peng Wang ,  Valluri Rao

    发明人： Qing Ma ,  Li-Peng Wang ,  Valluri Rao

    IPC分类号： H01L21/00 ,  H01L21/02

    CPC分类号： G11B9/02 ,  C30B23/02 ,  C30B25/02 ,  C30B29/32 ,  H01L21/28291

    摘要： The present invention describes a method including: providing a substrate; forming an underlying layer over the substrate; heating the substrate; forming a ferroelectric layer over the underlying layer, the ferroelectric layer having a thickness below a critical thickness, the underlying layer having a smaller lattice constant than the ferroelectric layer; cooling the substrate to room temperature; and inducing a compressive strain in the ferroelectric layer.

    摘要翻译： 本发明描述了一种方法，包括：提供衬底; 在衬底上形成下层; 加热基板; 在所述下层上形成铁电层，所述铁电层的厚度低于临界厚度，所述下层具有比所述铁电层更小的晶格常数; 将基板冷却至室温; 并在铁电层中产生压应变。

    Method and media for improving ferroelectric domain stability in an information storage device
    36.
    发明授权
    Method and media for improving ferroelectric domain stability in an information storage device 失效
    用于提高信息存储装置中铁电畴稳定性的方法和介质

    公开(公告)号：US07626846B2

    公开(公告)日：2009-12-01

    申请号：US11778571

    申请日：2007-07-16

    申请人： Valluri Ramana Rao ,  Li-Peng Wang ,  Qing Ma ,  Byong Man Kim

    发明人： Valluri Ramana Rao ,  Li-Peng Wang ,  Qing Ma ,  Byong Man Kim

    IPC分类号： G11C11/22

    CPC分类号： G11B9/02 ,  Y10S977/947

    摘要： A media for an information storage device includes a substrate of single-crystal silicon, a buffer layer of an epitaxial single crystal insulator formed over the substrate, a bottom electrode layer of an epitaxial single crystal conductor formed over the buffer layer, a ferroelectric layer of an epitaxial single crystal ferroelectric material formed over the bottom electrode layer, and an overlayer of an epitaxial single crystal material formed over the ferroelectric layer. Dipole charges generally having a first orientation exist at an interface between the bottom electrode layer and the ferroelectric layer includes, while dipole charges generally having a second orientation opposite the first orientation exist at an interface between the ferroelectric layer and the overlayer includes.

    摘要翻译： 用于信息存储装置的介质包括单晶硅衬底，在衬底上形成的外延单晶绝缘体的缓冲层，形成在缓冲层上的外延单晶导体的底电极层，形成在缓冲层上的铁电层 形成在底部电极层上的外延单晶铁电材料，以及形成在铁电体层上的外延单晶材料的覆层。 通常具有第一取向的偶极电荷存在于底电极层和铁电层之间的界面处，其中通常具有与第一取向相反的第二取向的偶极电荷存在于铁电层和覆层之间的界面处。

    Silicon micromachined ultra-sensitive vibration spectrum sensor array (VSSA)
    37.
    发明授权
    Silicon micromachined ultra-sensitive vibration spectrum sensor array (VSSA) 失效
    硅微加工超灵敏振动光谱传感器阵列（VSSA）

    公开(公告)号：US07559242B2

    公开(公告)日：2009-07-14

    申请号：US11097059

    申请日：2005-03-31

    申请人： Li-Peng Wang ,  Qing Ma ,  Valluri Rao ,  Goutam Paul

    发明人： Li-Peng Wang ,  Qing Ma ,  Valluri Rao ,  Goutam Paul

    IPC分类号： G01D21/00

    CPC分类号： G01H1/00

    摘要： An apparatus comprising a substrate and an array of vibration sensors formed on the substrate, the array comprising two or more vibration sensors, wherein each vibration sensor in the array has a different noise floor and a different operational frequency range than any of the other vibration sensors in the array. A process comprising forming an array of vibration sensors on a substrate, the array comprising two or more vibration sensors, wherein each of the two or more vibration sensors in the array has a different noise floor and a different operational frequency range than any of the other vibration sensors in the array. Other embodiments are disclosed and claimed.

    摘要翻译： 一种包括衬底和形成在衬底上的振动传感器阵列的装置，该阵列包括两个或更多个振动传感器，其中阵列中的每个振动传感器具有与任何其它振动传感器不同的本底噪声和不同的工作频率范围 在阵列中。 一种方法，包括在衬底上形成振动传感器阵列，所述阵列包括两个或更多个振动传感器，其中所述阵列中的所述两个或更多个振动传感器中的每一个具有不同于其他噪声的基底和不同的工作频率范围 阵列中的振动传感器。 公开和要求保护其他实施例。

    Gas phase chemical sensor based on film bulk resonators (FBAR)
    38.
    发明申请
    Gas phase chemical sensor based on film bulk resonators (FBAR) 审中-公开
    基于薄膜体谐振器（FBAR）的气相化学传感器

    公开(公告)号：US20070000305A1

    公开(公告)日：2007-01-04

    申请号：US11174059

    申请日：2005-06-30

    申请人： Qing Ma ,  Li-Peng Wang ,  Valluri Rao

    发明人： Qing Ma ,  Li-Peng Wang ,  Valluri Rao

    IPC分类号： G01N29/02

    CPC分类号： G01N29/022 ,  G01N29/036 ,  G01N33/54373 ,  G01N2291/021 ,  G01N2291/0255 ,  G01N2291/0256 ,  G01N2291/0426 ,  G01N2291/106

    摘要： An FBAR device may be chemically functionalized by depositing an interactive layer so that targeted chemicals are preferentially adsorbed. Such miniaturized chemical sensors may be combined with wireless network technology. For example, a chemical sensor may be integrated in a cell phone, PDA, a watch, or a car with wireless connection and GPS. Since such devices are widely populated, a national sensor network may be established. Consequently, a national toxicity map can be generated in real time. Detailed chemical information may be obtained, such as if a chemical is released by a source fixed on ground or by a moving object, or if is spread by explosives or by wind and so on.

    摘要翻译： FBAR器件可以通过沉积交互层进行化学功能化，从而优先吸附目标化学物质。 这种小型化学传感器可以与无线网络技术组合。 例如，化学传感器可以集成在具有无线连接和GPS的手机，PDA，手表或汽车中。 由于这样的设备被广泛地填充，所以可以建立国家传感器网络。 因此，可以实时生成国家毒性图。 可以获得详细的化学信息，例如化学品被固定在地面上的源或被移动的物体释放，或者如果被爆炸物或风等传播。