公开(公告)号：US20110221307A1

公开(公告)日：2011-09-15

申请号：US13128032

申请日：2009-11-25

申请人： Lianjun Liu ,  Sergio Pacheco ,  Francois Perruchot ,  Emmanuel Defay ,  Patrice Rey

发明人： Lianjun Liu ,  Sergio Pacheco ,  Francois Perruchot ,  Emmanuel Defay ,  Patrice Rey

IPC分类号： H01L41/04

CPC分类号： B81B3/0072 ,  B81B2201/032 ,  H01L41/0933 ,  H01L41/094

摘要： A micro or nano electromechanical transducer device formed on a semiconductor substrate comprises a movable structure which is arranged to be movable in response to actuation of an actuating structure. The movable structure comprises a mechanical structure having at least one mechanical layer having a first thermal response characteristic, at least one layer of the actuating structure having a second thermal response characteristic different to the first thermal response characteristic, and a thermal compensation structure having at least one thermal compensation layer. The thermal compensation layer is different to the at least one layer and is arranged to compensate a thermal effect produced by the mechanical layer and the at least one layer of the actuating structure such that the movement of the movable structure is substantially independent of variations in temperature.

摘要翻译： 形成在半导体衬底上的微型或纳米机电换能器装置包括可移动结构，其被布置成响应于致动结构的致动而是可移动的。 可移动结构包括具有至少一个具有第一热响应特性的机械层的机械结构，至少一层致动结构具有不同于第一热响应特性的第二热响应特性，以及至少具有至少 一个热补偿层。 热补偿层不同于至少一个层，并且被布置成补偿由机械层和致动结构的至少一个层产生的热效应，使得可移动结构的运动基本上与温度变化无关 。

公开(公告)号：US20100276767A1

公开(公告)日：2010-11-04

申请号：US12432377

申请日：2009-04-29

申请人： Lianjun Liu ,  Douglas G. Mitchell

发明人： Lianjun Liu ,  Douglas G. Mitchell

IPC分类号： H01L29/84 ,  H01L21/26

CPC分类号： H04R19/005 ,  H01L29/84 ,  H01L2924/14 ,  H01L2924/30105 ,  H01L2924/3025

摘要： A device comprises a substrate, a micro electro-mechanical systems (MEMS) structure, and a dielectric film. The substrate has a first side and a second side, the second side opposite the first side. The MEMS structure is formed on the first side of the substrate. The cavity is formed in the substrate directly opposite the MEMS structure. The cavity has an opening formed on the second side. The dielectric film is attached to the second side of the substrate and completely covering the opening. In one embodiment, the MEMS structure is a diaphragm for a microphone. Another embodiment includes a method for forming the device.

摘要翻译： 一种器件包括衬底，微电子机械系统（MEMS）结构和电介质膜。 衬底具有第一侧和第二侧，第二侧与第一侧相对。 MEMS结构形成在衬底的第一侧上。 空腔形成在与MEMS结构直接相对的基板中。 空腔具有形成在第二侧上的开口。 电介质膜附着到基片的第二侧并完全覆盖开口。 在一个实施例中，MEMS结构是用于麦克风的隔膜。 另一实施例包括用于形成装置的方法。

公开(公告)号：US07732991B2

公开(公告)日：2010-06-08

申请号：US11864266

申请日：2007-09-28

申请人： Lianjun Liu

发明人： Lianjun Liu

IPC分类号： H01L41/08

CPC分类号： B81B3/0086 ,  B81B2201/0235 ,  B81B2203/0118 ,  H01H57/00 ,  H01H2057/006 ,  H01L41/094 ,  H01L41/257

摘要： A self-poling piezoelectric based MEMS device is configured for piezoelectric actuation in response to application of a device operating voltage. The MEMS device comprises a beam, a first electrode disposed on the beam, a layer of piezoelectric material having a self-poling thickness disposed overlying a portion of the first electrode, and a second electrode overlying the layer of piezoelectric material. The layer of piezoelectric material is self-poled in response to application of the device operating voltage across the first and second electrodes. In addition, the self-poled piezoelectric material has a poling direction established according to a polarity orientation of the device operating voltage as applied across the first and second electrodes.

摘要翻译： 响应于器件工作电压的应用，自极化基于压电的MEMS器件被配置为用于压电致动。 MEMS器件包括光束，设置在光束上的第一电极，具有设置在第一电极的一部分上的自极化厚度的压电材料层和覆盖在压电材料层上的第二电极。 响应于在第一和第二电极上施加器件工作电压，压电材料层是自极化的。 此外，自极化压电材料具有根据施加在第一和第二电极上的器件工作电压的极性取向而建立的极化方向。

公开(公告)号：US07663196B2

公开(公告)日：2010-02-16

申请号：US11673015

申请日：2007-02-09

申请人： Lianjun Liu ,  Melvy F. Miller

发明人： Lianjun Liu ,  Melvy F. Miller

IPC分类号： H01L27/14 ,  H01L29/82 ,  H01L29/84 ,  H01L29/00

CPC分类号： B81C1/00253 ,  H01L28/10 ,  H01L28/60

摘要： A device 20 includes substrates 22 and 24 coupled to form a volume 32 between the substrates. A surface 28 of the substrate 22 faces a surface 30 of the substrate 24. A metal-insulator-metal capacitor 34 is formed on one of the surfaces 28 and 30. A conductive element 58 spans between a top electrode 56 of the capacitor 34 and the other surface 28 and 30. Vias 64 and 66 extend through the substrate 22 and are electrically interconnected with the conductive element 58 and a bottom electrode 52 of the capacitor 34. Another device 72 includes an underpass transmission line 92 formed on a surface 80 of a substrate 74 within a volume 84 formed between the substrate 74 and another substrate 76. The line 92 underlies an integrated device 96 formed on a surface 78 of the substrate 74.

摘要翻译： 装置20包括联接以在基板之间形成体积32的基板22和24。 基板22的表面28面向基板24的表面30.金属 - 绝缘体 - 金属电容器34形成在一个表面28和30上。导电元件58跨越电容器34的顶部电极56和 另一个表面28和30.通道64和66延伸穿过基板22，并与导电元件58和电容器34的底部电极52电互连。另一个装置72包括形成在表面80上的地下通道传输线92 形成在衬底74和另一衬底76之间的体积84内的衬底74.线92位于形成在衬底74的表面78上的集成器件96的下面。

公开(公告)号：US07586238B2

公开(公告)日：2009-09-08

申请号：US11465319

申请日：2006-08-17

申请人： Lianjun Liu

发明人： Lianjun Liu

IPC分类号： H01L41/04 ,  H01H57/00

CPC分类号： H01H59/0009 ,  H01H1/50 ,  H01H11/0062 ,  H01H47/002 ,  H01H2057/006 ,  H01H2201/02

摘要： A micro electromechanical switch has a movable portion positioned to form an electrical connection between a first electrical contact and a second electrical contact. A piezoelectric electrode is formed on the movable portion. The piezoelectric electrode causes the movable portion to move in response to a driver voltage. A piezo element is formed on the movable portion of the switch. The piezo element is for detecting movement of the movable portion between an open position and a closed position. The piezo element is also used to detect switch bouncing when the switch transitions from the open position to the closed position. In one embodiment, the piezo element is a piezoelectric element and in another embodiment the piezo element is a piezo-resistive element.

摘要翻译： 微机电开关具有可移动部分，其被定位成在第一电接触件和第二电接触件之间形成电连接。 压电电极形成在可动部分上。 压电电极使可动部分响应于驱动器电压而移动。 压电元件形成在开关的可移动部分上。 压电元件用于检测可动部分在打开位置和关闭位置之间的移动。 当开关从打开位置转换到关闭位置时，压电元件还用于检测开关跳动。 在一个实施例中，压电元件是压电元件，在另一个实施例中，压电元件是压电元件。

公开(公告)号：US07567782B2

公开(公告)日：2009-07-28

申请号：US11494821

申请日：2006-07-28

申请人： Lianjun Liu ,  Melvy F. Miller

发明人： Lianjun Liu ,  Melvy F. Miller

IPC分类号： H04B1/04

CPC分类号： H04B1/0458 ,  H04B1/0067

摘要： Methods and apparatus are provided to enable a transceiver (200) or transmitter including a single PA line-up (210) to transmit signals having frequencies in two or more different frequency bands, and/or having two or more different modulation types, and/or having two or more different RF power levels. The single PA line-up includes at least one variable matching circuit (216) and a variable harmonic filter (240) to tune match and tune filter communication signals prior to transmission. The variable matching circuit and the variable harmonic filter each include at least one variable capacitive element (2160 and 2400) that switches ON/OFF depending on whether a low frequency signal or a high frequency signal is being transmitted. Each variable capacitive element includes separate direct current and radio frequency terminals to enable the single PA line-up to change signal modulation and/or RF power levels in addition to frequencies.

摘要翻译： 提供了方法和装置，以使包括单个PA阵列（210）的收发机（200）或发射机能够发送具有两个或多个不同频带中的频率和/或具有两个或多个不同调制类型的频率，和/ 或具有两个或更多个不同的RF功率电平。 单个PA阵列包括至少一个可变匹配电路（216）和可变谐波滤波器（240），以在传输之前调谐匹配和调谐滤波器通信信号。 可变匹配电路和可变谐波滤波器各自包括至少一个可变电容元件（2160和2400），其根据是否正在发送低频信号或高频信号来接通/断开。 每个可变电容元件包括单独的直流电和射频终端，以使得单个PA阵列除频率之外还能改变信号调制和/或RF功率电平。

公开(公告)号：US07462335B2

公开(公告)日：2008-12-09

申请号：US10259845

申请日：2002-09-30

申请人： Lianjun Liu ,  Wayne L. Johnson

发明人： Lianjun Liu ,  Wayne L. Johnson

IPC分类号： B01J19/12 ,  H05B31/48

CPC分类号： H01J37/32082 ,  C23C16/509 ,  C23C16/52 ,  H01J37/32532 ,  H01J37/32935 ,  H01J37/32972 ,  H01J37/3299 ,  H05H1/0037

摘要： A method of adjusting plasma processing of a substrate in a plasma reactor having an electrode assembly. The method includes the steps of positioning the substrate in the plasma reactor, creating a plasma in the plasma reactor, monitoring optical emissions emanating from a plurality of different regions of the plasma in a direction substantially parallel to the surface of the substrate during plasma processing of the substrate, and determining an integrated power spectrum for each of the different plasma regions and comparing each of the integrated power spectra to a predetermined value. One aspect of the method includes utilizing an electrode assembly having a plurality of electrode segments and adjusting RF power delivered to the one or more electrode segments based on differences in the integrated power spectra from the predetermined value. Another aspect of the invention includes altering the flow of gas to different regions of the plasma in response to differences in the integrated power spectra detected by the fiber optic sensors. Several types of novel electrode assemblies suitable for carrying out the method of the invention are also disclosed.

摘要翻译： 一种在具有电极组件的等离子体反应器中调整衬底的等离子体处理的方法。 该方法包括以下步骤：将衬底定位在等离子体反应器中，在等离子体反应器中产生等离子体，在等离子体处理期间在基本上平行于衬底的表面的方向上监测从等离子体的多个不同区域发出的光发射 并且确定每个不同等离子体区域的综合功率谱，并将每个积分功率谱与预定值进行比较。 该方法的一个方面包括利用具有多个电极段的电极组件，并且基于来自预定值的积分功率谱的差异来调节传递到一个或多个电极段的RF功率。 本发明的另一方面包括响应于由光纤传感器检测到的积分功率谱的差异，改变气体流到等离子体的不同区域。 还公开了适用于实施本发明方法的几种类型的新型电极组件。

公开(公告)号：US07414316B2

公开(公告)日：2008-08-19

申请号：US11366928

申请日：2006-03-01

申请人： Lianjun Liu ,  Marie E. Borucki

发明人： Lianjun Liu ,  Marie E. Borucki

IPC分类号： H01L23/48

CPC分类号： H01L25/0657 ,  H01L2225/06513 ,  H01L2225/06541 ,  H01L2225/06589 ,  H01L2924/0002 ,  H01L2924/00

摘要： A semiconductor structure (100) includes a first substrate (110) having a first semiconductor device (112) formed therein, a second substrate (120) having a second device (122) formed therein and vertically-integrated above the first substrate (110), and a thermal isolation gap (130) disposed between the first device (112) and the second device (122). The thermal isolation gap (130) may be formed, for example, using an etched dielectric layer formed on first substrate (110), using an etched cavity in the second substrate (120), or by including a bonding layer (140) that has a gap or void incorporated therein.

摘要翻译： 半导体结构（100）包括具有形成在其中的第一半导体器件（112）的第一衬底（110），具有形成在其中并垂直集成在第一衬底（110）上方的第二器件（122）的第二衬底（120） 以及设置在第一装置（112）和第二装置（122）之间的热隔离间隙（130）。 热隔离间隙（130）可以例如使用在第一基板（110）上形成的蚀刻介电层，使用第二基板（120）中的蚀刻空腔，或者通过包括具有 其中包含间隙或空隙。

公开(公告)号：US20080122560A1

公开(公告)日：2008-05-29

申请号：US11593896

申请日：2006-11-07

申请人： Lianjun Liu

发明人： Lianjun Liu

IPC分类号： H01P1/00 ,  H01L21/50

CPC分类号： B81B7/0077 ,  B81B2207/092

摘要： An integrated passive device (20) includes a first wafer (22), a first integrated device (28) formed on a first surface (24) of the wafer (22), and a second integrated device (30) formed on a second surface (26) of the wafer (22), the second surface (26) opposing the first surface (24). A microelectromechanical (MEMS) device (72) includes a second wafer (74) having a MEMS component (76) formed thereon. The integrated passive device (20) and the MEMS device (72) are coupled to form an IPD/MEMS stacked device (70) in accordance with a fabrication process (90). The fabrication process (90) calls for forming (94) the second integrated device (30) on the second surface (26) of the wafer (22), constructing (100) the MEMS component (76) on the wafer (74), coupling (104) the wafers (22, 74), then creating the first integrated device (28) on the first surface (24) of the first wafer (22).

摘要翻译： 集成无源器件（20）包括第一晶片（22），形成在晶片（22）的第一表面（24）上的第一集成器件（28）和形成在晶片（22）的第二表面 （22）的第二表面（26），与第一表面（24）相对的第二表面（26）。 微机电（MEMS）装置（72）包括其上形成有MEMS部件（76）的第二晶片（74）。 集成无源器件（20）和MEMS器件（72）根据制造工艺（90）耦合以形成IPD / MEMS堆叠器件（70）。 制造工艺（90）要求在晶片（22）的第二表面（26）上形成（94）第二集成器件（30），在晶片（74）上构造（100）MEMS部件（76） 耦合（104）晶片（22,74），然后在第一晶片（22）的第一表面（24）上产生第一集成器件（28）。

公开(公告)号：US07018553B2

公开(公告)日：2006-03-28

申请号：US10418041

申请日：2003-04-18

申请人： Lianjun Liu ,  Wayne L. Johnson

发明人： Lianjun Liu ,  Wayne L. Johnson

IPC分类号： H01L21/00 ,  G01R31/00

CPC分类号： H01J37/32082 ,  C23C16/509 ,  C23C16/52 ,  H01J37/32532 ,  H01J37/32935 ,  H01J37/32972 ,  H01J37/3299 ,  H05H1/0037

摘要： A method of adjusting plasma processing of a substrate in a plasma reactor having an electrode assembly. The method includes the steps of positioning the substrate in the plasma reactor, creating a plasma in the plasma reactor, monitoring optical emissions emanating from a plurality of different regions of the plasma in a direction substantially parallel to the surface of the substrate during plasma processing of the substrate, and determining an integrated power spectrum for each of the different plasma regions and comparing each of the integrated power spectra to a predetermined value. One aspect of the method includes utilizing an electrode assembly having a plurality of electrode segments and adjusting RF power delivered to the one or more electrode segments based on differences in the integrated power spectra from the predetermined value. Another aspect of the invention includes altering the flow of gas to different regions of the plasma in response to differences in the integrated power spectra detected by the fiber optic sensors. Several types of novel electrode assemblies suitable for carrying out the method of the invention are also disclosed.