公开(公告)号：US20110105438A1

公开(公告)日：2011-05-05

申请号：US12921697

申请日：2009-03-12

申请人： Timothy A. Riley ,  Lin Cheng

发明人： Timothy A. Riley ,  Lin Cheng

IPC分类号： A61K31/662 ,  C07F9/38 ,  C07F9/40 ,  A61P31/18

CPC分类号： A61K31/662 ,  A61K47/60 ,  C07F9/40 ,  C08G65/3355 ,  C08G2650/02 ,  C08G2650/04 ,  C08G2650/38

摘要： The invention relates to (among other things) oligomer-foscarnet conjugates and related compounds. A conjugate of the invention, when administered by any of a number of administration routes, exhibits advantages over previously administered un-conjugated foscarnet compounds.

摘要翻译： 本发明涉及（尤其）低聚物 - 膦甲酸共轭物和相关化合物。 当通过任何多种施用途径给药时，本发明的缀合物显示出优于先前施用的未缀合的膦甲酸酯化合物的优点。

公开(公告)号：US07604306B1

公开(公告)日：2009-10-20

申请号：US09934549

申请日：2001-08-23

申请人： Lin Cheng

发明人： Lin Cheng

IPC分类号： A47B46/00

CPC分类号： B62B3/003 ,  B62B3/005 ,  B62B3/04 ,  B62B5/0006 ,  B62B2203/02 ,  B62B2501/02 ,  H01L21/6732

摘要： A new transportation cart is provided that separates each reticle box or container from other reticle boxes contained in the cart. The transportation cart provides additional shock absorption, thus eliminating effects of vibration of the reticles, the transportation cart is equipped with ESD protection and provides improved security to the transported reticles.

摘要翻译： 提供了一种新的运输车，其将每个标线盒或容器与包含在推车中的其他标线盒分开。 运输车辆提供额外的减震，从而消除了掩模版振动的影响，运输车辆配备了ESD保护，并为运送的掩模版提供了改进的安全性。

公开(公告)号：US20070217566A1

公开(公告)日：2007-09-20

申请号：US11682013

申请日：2007-03-05

申请人： Yunqiang Chen ,  Lin Cheng ,  Tong Fang ,  Jason Tyan

发明人： Yunqiang Chen ,  Lin Cheng ,  Tong Fang ,  Jason Tyan

IPC分类号： H05G1/60 ,  A61B6/00 ,  G01N23/00 ,  G21K1/12

CPC分类号： G01N23/046 ,  G01N2223/419 ,  G06T11/006 ,  G06T2211/421 ,  G06T2211/424

摘要： A system and method for image reconstruction is disclosed. The method divides iterative image reconstruction into two stages, in the image and Radon space, respectively. In the first stage, filtered back projection and adaptive filtering in the image space are combined to generate a refined reconstructed image of a sinogram residue. This reconstructed image represents an update direction in the image space. In the second stage, the update direction is transformed to the Radon space, and a step size is determined to minimize a difference between the sinogram residue and a Radon transform of the refined reconstructed image of the sinogram residue in the Radon space. These stages are repeated iteratively until the solution converges.

摘要翻译： 公开了一种用于图像重建的系统和方法。 该方法分别在图像和氡空间中将迭代图像重建分为两个阶段。 在第一阶段，滤波反投影和图像空间中的自适应滤波被组合以产生正弦图残差的精细重建图像。 该重建图像表示图像空间中的更新方向。 在第二阶段中，将更新方向转换为Radon空间，并且确定步长以最小化Radon空间中的正弦图残差的精细重建图像的正弦图残差和Radon变换之间的差异。 迭代重复这些阶段，直到解得到收敛。

公开(公告)号：US20060105046A1

公开(公告)日：2006-05-18

申请号：US11332964

申请日：2006-01-17

申请人： Michael Bentley ,  Michael Roberts ,  Xiaoming Shen ,  Lin Cheng

发明人： Michael Bentley ,  Michael Roberts ,  Xiaoming Shen ,  Lin Cheng

IPC分类号： A61K31/485 ,  A61K9/14

CPC分类号： A61K47/60

摘要： The invention provides polymer conjugates of opioid antagonists comprising a polymer, such as poly(ethylene glycol), covalently attached to an opioid antagonist. The linkage between the polymer and the opioid antagonist is preferably hydrolytically stable. The invention also includes a method of treating one or more side effects associated with the use of opioid analgesics, such as constipation, nausea, or pruritus, by administering a polymer conjugate of the invention.

公开(公告)号：US20050109495A1

公开(公告)日：2005-05-26

申请号：US10956163

申请日：2004-09-30

申请人： Lin Cheng ,  Zengyuan Guo

发明人： Lin Cheng ,  Zengyuan Guo

IPC分类号： F22D1/32 ,  F28D7/00 ,  F28D7/06 ,  F28F13/10 ,  F28D1/00

CPC分类号： F22D1/32 ,  F28D7/0066 ,  F28D7/0083 ,  F28D7/06 ,  F28F13/10

摘要： A complex flow-path heat exchanger having U-shaped tube and cantilever combined coil, which can achieve, in this type heat exchanger, a simple construction, a complex flow of steam within the same one heat exchange shell body, a high heat exchange efficiency, and a low energy loss. The technical gift of the present invention is that, after entering into the heat exchanger, steam firstly effects heat exchange on the U-shaped tube flow path shell side to be cooled and condensed, thereafter entering into flow path tube side of the cantilever combined coil, which are disposed within the same one shell, for a secondary heat exchange, and subsequently flowing out of the heat exchanger after being subcooled. Such steam-water heat exchanger having a complex flow path are advantageous in a small steam flow resistance of the U-shaped tube flow path shell side; a higher condensate water flow velocity in the cantilever combined coils flow path tube; a high heat exchange coefficient; good coordination of the temperature difference fields of the hot and cold fluids in the heat exchanger; and a high heat exchange efficiency. Therefore, the present heat exchanger can be a new generation product relative to the currently-used conventional low-temperature, low-pressure and corrosion-free heat exchangers.

摘要翻译： 一种具有U形管和悬臂组合线圈的复杂流路热交换器，在这种类型的热交换器中可以实现简单的结构，同一个热交换壳体内蒸汽的复杂流动，高的热交换效率 ，和低能量损失。 本发明的技术内容是，在进入热交换器之后，蒸汽首先在U形管流路壳体侧进行热交换以冷却和冷凝，然后进入悬臂组合线圈的流路管侧 它们被设置在相同的一个壳体内，用于二次热交换，并且随后在过冷却之后流出热交换器。 这种具有复杂流动路径的蒸汽 - 水热交换器在U形管流动通道壳侧的小的蒸汽流动阻力方面是有利的; 悬臂组合线圈流路管中冷凝水流速较高; 高热交换系数; 热交换器中冷热流体的温差场的协调良好; 并具有较高的热交换效率。 因此，本发明的热交换器可以相对于目前常规的低温，低压和无腐蚀的热交换器而言是新一代产品。

公开(公告)号：USD911835S1

公开(公告)日：2021-03-02

申请号：US29677217

申请日：2019-01-18

申请人： Lin Cheng

设计人： Lin Cheng

公开(公告)号：US10541306B2

公开(公告)日：2020-01-21

申请号：US13610993

申请日：2012-09-12

申请人： Michael John O'Loughlin ,  Lin Cheng ,  Albert Augustus Burk, Jr. ,  Anant Kumar Agarwal ,  Alexander Suvorov

发明人： Michael John O'Loughlin ,  Lin Cheng ,  Albert Augustus Burk, Jr. ,  Anant Kumar Agarwal ,  Alexander Suvorov

IPC分类号： H01L29/16 ,  H01L21/02 ,  H01L21/322 ,  H01L21/265

摘要： A semiconductor die and a process for fabricating the semiconductor die are disclosed. The semiconductor die has a substrate and a silicon carbide (SiC) epitaxial structure on the substrate. The SiC epitaxial structure includes at least a first N-type SiC layer, at least a first P-type SiC layer, and carbon vacancy reduction material, which has been implanted into a surface of the SiC epitaxial structure. Further, the SiC epitaxial structure has been annealed to mobilize the carbon vacancy reduction material to diffuse carbon atoms substantially throughout the SiC epitaxial structure, thereby increasing an average carrier lifetime in the SiC epitaxial structure.

公开(公告)号：US09601605B2

公开(公告)日：2017-03-21

申请号：US13438902

申请日：2012-04-04

申请人： Qingchun Zhang ,  Anant K. Agarwal ,  Lin Cheng

发明人： Qingchun Zhang ,  Anant K. Agarwal ,  Lin Cheng

IPC分类号： H01L29/73 ,  H01L29/06 ,  H01L29/74 ,  H01L29/16

CPC分类号： H01L29/7302 ,  H01L29/0626 ,  H01L29/1608 ,  H01L29/7424

摘要： A bipolar junction transistor (BJT), which includes a collector layer, a base layer on the collector layer, an emitter layer on the base layer, and a recess region embedded in the collector layer, is disclosed. A base-collector plane is between the base layer and the collector layer. The recess region is may be below the base-collector plane. Further, the recess region and the base layer are a first type of semiconductor material. By embedding the recess region in the collector layer, the recess region and the collector layer form a first P-N junction, which may provide a point of avalanche for the BJT. Further, the collector layer and the base layer form a second P-N junction. By separating the point of avalanche from the second P-N junction, the BJT may avalanche robustly, thereby reducing the likelihood of avalanche induced failures, particularly in silicon carbide (SiC) BJTs.

公开(公告)号：US09396946B2

公开(公告)日：2016-07-19

申请号：US13229266

申请日：2011-09-09

申请人： Sarit Dhar ,  Lin Cheng ,  Sei-Hyung Ryu ,  Anant Agarwal ,  John Williams Palmour ,  Erik Maki ,  Jason Gurganus ,  Daniel Jenner Lichtenwalner

发明人： Sarit Dhar ,  Lin Cheng ,  Sei-Hyung Ryu ,  Anant Agarwal ,  John Williams Palmour ,  Erik Maki ,  Jason Gurganus ,  Daniel Jenner Lichtenwalner

IPC分类号： H01L21/3205 ,  H01L21/04 ,  H01L21/02 ,  H01L29/51 ,  H01L29/739 ,  H01L29/78 ,  H01L29/06 ,  H01L29/16

CPC分类号： H01L29/7802 ,  H01L21/02142 ,  H01L21/02164 ,  H01L21/02172 ,  H01L21/02175 ,  H01L21/022 ,  H01L21/02282 ,  H01L21/02288 ,  H01L21/02378 ,  H01L21/045 ,  H01L21/049 ,  H01L29/0619 ,  H01L29/1606 ,  H01L29/1608 ,  H01L29/513 ,  H01L29/517 ,  H01L29/518 ,  H01L29/7395 ,  H01L29/78 ,  H01L29/7813

摘要： Embodiments of a semiconductor device having increased channel mobility and methods of manufacturing thereof are disclosed. In one embodiment, the semiconductor device includes a substrate including a channel region and a gate stack on the substrate over the channel region. The gate stack includes an alkaline earth metal. In one embodiment, the alkaline earth metal is Barium (Ba). In another embodiment, the alkaline earth metal is Strontium (Sr). The alkaline earth metal results in a substantial improvement of the channel mobility of the semiconductor device.

摘要翻译： 公开了具有增加的信道移动性的半导体器件及其制造方法的实施例。 在一个实施例中，半导体器件包括在沟道区上的衬底上包括沟道区和栅叠层的衬底。 栅极堆叠包括碱土金属。 在一个实施方案中，碱土金属是钡（Ba）。 在另一个实施方案中，碱土金属是锶（Sr）。 碱土金属导致半导体器件的沟道迁移率的显着改善。

公开(公告)号：US09269580B2

公开(公告)日：2016-02-23

申请号：US13229276

申请日：2011-09-09

申请人： Sarit Dhar ,  Lin Cheng ,  Sei-Hyung Ryu ,  Anant Agarwal ,  John Williams Palmour ,  Jason Gurganus

发明人： Sarit Dhar ,  Lin Cheng ,  Sei-Hyung Ryu ,  Anant Agarwal ,  John Williams Palmour ,  Jason Gurganus

IPC分类号： H01L29/51 ,  H01L29/78 ,  H01L21/28 ,  H01L21/04 ,  H01L21/02 ,  H01L29/739 ,  H01L29/06 ,  H01L29/16

CPC分类号： H01L29/7802 ,  H01L21/02142 ,  H01L21/02164 ,  H01L21/02172 ,  H01L21/02175 ,  H01L21/022 ,  H01L21/02282 ,  H01L21/02288 ,  H01L21/02378 ,  H01L21/045 ,  H01L21/049 ,  H01L29/0619 ,  H01L29/1606 ,  H01L29/1608 ,  H01L29/513 ,  H01L29/517 ,  H01L29/518 ,  H01L29/7395 ,  H01L29/78 ,  H01L29/7813

摘要： Embodiments of a semiconductor device having increased channel mobility and methods of manufacturing thereof are disclosed. In one embodiment, the semiconductor device includes a substrate including a channel region and a gate stack on the substrate over the channel region. The gate stack includes an alkaline earth metal. In one embodiment, the alkaline earth metal is Barium (Ba). In another embodiment, the alkaline earth metal is Strontium (Sr). The alkaline earth metal results in a substantial improvement of the channel mobility of the semiconductor device.

摘要翻译： 公开了具有增加的信道移动性的半导体器件及其制造方法的实施例。 在一个实施例中，半导体器件包括在沟道区上的衬底上包括沟道区和栅叠层的衬底。 栅极堆叠包括碱土金属。 在一个实施方案中，碱土金属是钡（Ba）。 在另一个实施方案中，碱土金属是锶（Sr）。 碱土金属导致半导体器件的沟道迁移率的显着改善。