Abstract:
Described herein is a method and liquid-based precursor composition for depositing a multicomponent film. In one embodiment, the method and compositions described herein are used to deposit Germanium Tellurium (GeTe), Antimony Tellurium (SbTe), Antimony Germanium (SbGe), Germanium Antimony Tellurium (GST), Indium Antimony Tellurium (IST), Silver Indium Antimony Tellurium (AIST), Cadmium Telluride (CdTe), Cadmium Selenide (CdSe), Zinc Telluride (ZnTe), Zinc Selenide (ZnSe), Copper indium gallium selenide (CIGS) films or other tellurium and selenium based metal compounds for phase change memory and photovoltaic devices.
Abstract:
The objective of this invention is to make solar water heating affordable and compatible with conventional gas or electric water heaters. Solar energy is clean and renewable. However, solar water heating has not been in wide use in the US mainly due to two reasons: first, the cost of a current solar water heater is generally too expensive for an average household; second, a typical solar water heater uses ethylene glycerol as a heat transfer fluid to prevent freezing and needs additional space for an extra exchange tank. Our design includes evacuated tube collector panels for efficient collection of solar energy, utilizes two unique three-way adaptors to connect solar collector panels to a conventional water heater for storing solar hot water, and is operational even in freezing temperature. These improvements eliminate the need for an extra exchange tank and significantly reduce the cost of a solar water heater.
Abstract:
A method for routing switch is disclosed. The method comprises: when a network device forwards traffic through N equal-cost multi-path (ECMP) routes to a destination, if M of these routes are inactive, then for each inactive route, determining an alternative route for replacing the inactive route from N-M active routes, and modifying the inactive route to the alternative route so as to switch the traffic of the inactive route onto the alternative route, wherein N and M are positive integer numbers, with N being greater than or equal to 2 and M being greater than or equal to 1 and smaller than N.
Abstract:
A method for compensating for a wavelength shift in a wavelength selective switch (WSS), and a device therefor. The device comprises a fixed seat (301) as well as a rotation beam (304) and a compensation block (302) that have different thermal expansion amounts, the rotation beam (304) and the compensation block (302) being fixedly adhered to the fixed seat (301). In the method, a combined structure of the rotation beam (304) and the compensation block (302) with different thermal expansion amounts is adopted; the combined structure rotates by means of different expansion amounts generated by the rotation beam (304) and the compensation block (302) at the same external temperature, and further drives an optical element of the WSS to rotate, hence compensating for a wavelength shift of the WSS. The method is safe and reliable; the device has a simple structure, and is convenient to encapsulate, is applicable to various WSS optical paths, and does not affect advantages of the optical path structure of the WSS.
Abstract:
This invention discloses the synthesis of metal chalcogenides using chemical vapor deposition (CVD) process, atomic layer deposition (ALD) process, or wet solution process. Ligand exchange reactions of organosilyltellurium or organosilylselenium with a series of metal compounds having neucleophilic substituents generate metal chalcogenides. This chemistry is used to deposit germanium-antimony-tellurium (GeSbTe) and germanium-antimony-selenium (GeSbSe) films or other tellurium and selenium based metal compounds for phase change memory and photovoltaic devices.
Abstract:
Described herein is a method and liquid-based precursor composition for depositing a multicomponent film. In one embodiment, the method and compositions described herein are used to deposit Germanium Tellurium (GeTe), Antimony Tellurium (SbTe), Antimony Germanium (SbGe), Germanium Antimony Tellurium (GST), Indium Antimony Tellurium (IST), Silver Indium Antimony Tellurium (AIST), Cadmium Telluride (CdTe), Cadmium Selenide (CdSe), Zinc Telluride (ZnTe), Zinc Selenide (ZnSe), Copper indium gallium selenide (CIGS) films or other tellurium and selenium based metal compounds for phase change memory and photovoltaic devices.
Abstract:
Device for aiding the production of a mesh, includes storing first numerical data defining a surface to be processed, a partitioner calculating three-dimensional work cells given initial points, each work cell associated with a point in space, a tiling tool actuating the partitioner with a first set of initial points, defined with respect to the surface, so as to obtain a first set of work cells, an evaluator calculating a cumulative quantity representing the sum of the moments of the points of the work cells with respect to their associated points, and an optimizer iteratively actuating the tiling tool and the evaluator with a set of initial points drawn from the previous sets, according to a rule calculated to minimize said cumulative quantity. The moments are determined by a chosen nonnative function, of order higher than or equal to two and/or according to an adaptation matrix representing an anisotropy field.
Abstract:
A wavelength selective switch (WSS) with hitless switching. The WSS includes the fiber collimator array, the focusing lens, collimating lens, diffraction grating, focusing lens, and attenuation reflection unit array. Each attenuation reflection unit has an interconnected transmission-type MEMS attenuator and a one-dimension MEMS reflector. The transmission-type MEMS attenuator is positioned in the front of the one-dimension MEMS reflector. The central axis of the transmission-type MEMS attenuator aligns and coincides with that of the one-dimension MEMS reflector, with the two central axes being glued together. The WSS of the present invention effectively utilizes the combination of a one-dimension reflector array and a transmission-type optical attenuator chip. With the use of one-dimension reflector array, instead of the known two-dimension reflector array, the complexity of design and manufacture is greatly reduced, thereby reducing the production costs of the switch.
Abstract:
This invention related to method to form silicon dioxide films that have extremely low wet etch rate in HF solution using a thermal CVD process, ALD process or cyclic CVD process in which the silicon precursor is selected from one of: R1nR2mSi(NR3R4)4-n-m; and, a cyclic silazane of (R1R2SiNR3)p, where R1 is an alkenyl or an aromatic, such as vinyl, allyl, and phenyl; R2, R3, and R4 are selected from H, alkyl with C1-C10, linear, branched, or cyclic, an alkenyl with C2-C10 linear, branched, or cyclic, and aromatic; n=1-3, m=0-2; p=3-4.
Abstract translation:本发明涉及使用热CVD法,ALD法或循环CVD法在HF溶液中具有非常低的湿蚀刻速率的二氧化硅膜的方法,其中硅前体选自以下之一:R1nR2mSi(NR3R4)4-nm ; 和(R 1 R 2 SiNR 3)p的环状硅氮烷,其中R 1是烯基或芳族,例如乙烯基,烯丙基和苯基; R2,R3和R4选自H为具有C1-C10,直链,支链或环状的烷基,具有C2-C10直链,支链或环状和芳族的烯基; n = 1-3,m = 0-2; p = 3-4。
Abstract:
Antimicrobial silicone-based dressings, such as wound dressings, are disclosed. An example dressing comprises a transparent and self-adhesive gel sheet cured from a liquid containing silicone, the sheet having dispersed therein (i) particulates of a chlorhexidine compound that is not soluble in the liquid; and (ii) at least one other antimicrobial. Methods of making the silicone-based dressings and methods of use are also disclosed.