公开(公告)号：US20190052362A1

公开(公告)日：2019-02-14

申请号：US16100727

申请日：2018-08-10

Applicant: Luxtera, Inc.

Inventor： Mark Peterson ,  Subal Sahni ,  Peter De Dobbelaere

IPC: H04B10/25 ,  G02B27/09 ,  G02B6/38 ,  G02B27/10 ,  G02B5/20 ,  H04J14/02 ,  G02B6/02

Abstract: Methods and systems for a free space CWDM MUX/DEMUX for integration with a grating coupler based silicon platform may include an optical assembly comprising a lens array and a plurality of thin film filter splitters having angled reflective surfaces. The optical assembly may be operable to receive an input optical signal comprising a plurality of optical signals at different wavelengths via an optical fiber, focus the input optical signal onto a first thin film filter splitter, reflect a first of the optical signals into the lens array and passing others to a second thin film filter splitter, and reflect a second optical signal into the lens array and passing others to a third of the plurality of thin film filter splitters.

公开(公告)号：US10205533B2

公开(公告)日：2019-02-12

申请号：US15231332

申请日：2016-08-08

Applicant: Luxtera, Inc.

Inventor： Gianlorenzo Masini ,  Subal Sahni

IPC: H04B10/60 ,  G01J1/44 ,  H01L31/0224 ,  H01L31/028 ,  H01L31/0368 ,  H01L31/11 ,  H03F3/08

Abstract: A method and system for optoelectronic receivers utilizing waveguide heterojunction phototransistors (HPTs) integrated in a wafer are disclosed and may include receiving optical signals via optical fibers operably coupled to a top surface of the chip. Electrical signals may be generated utilizing HPTs that detect the optical signals. The electrical signals may be amplified via voltage amplifiers, or transimpedance amplifiers, the outputs of which may be utilized to bias the HPTs by a feedback network. The optical signals may be coupled into opposite ends of the HPTs. A collector of the HPTs may comprise a silicon layer and a germanium layer, a base may comprise a silicon germanium alloy with germanium composition ranging from 70% to 100%, and an emitter including crystalline or poly Si or SiGe. The optical signals may be demodulated by communicating a mixer signal to a base terminal of the HPTs.

公开(公告)号：US10027420B2

公开(公告)日：2018-07-17

申请号：US14752696

申请日：2015-06-26

Applicant: Luxtera, Inc.

Inventor： Subal Sahni ,  Kam-Yan Hon ,  Attila Mekis ,  Gianlorenzo Masini ,  Lieven Verslegers

IPC: G02F1/225 ,  H04B10/00 ,  H04B10/548 ,  G02F1/025

Abstract: Methods and systems for a silicon-based optical phase modulator with high modal overlap are disclosed and may include, in an optical modulator having a rib waveguide in which a cross-shaped depletion region separates four alternately doped sections: receiving an optical signal at one end of the optical modulator, modulating the received optical signal by applying a modulating voltage, and communicating a modulated optical signal out of an opposite end of the modulator. The modulator may be in a silicon photonically-enabled integrated circuit which may be in a complementary-metal oxide semiconductor (CMOS) die. An optical mode may be centered on the cross-shaped depletion region. The four alternately doped sections may include: a shallow depth p-region, a shallow depth n-region, a deep p-region, and a deep n-region. The shallow depth p-region may be electrically coupled to the deep p-region periodically along the length of the modulator.

公开(公告)号：US10025120B2

公开(公告)日：2018-07-17

申请号：US14105527

申请日：2013-12-13

Applicant: Luxtera Inc.

Inventor： Ali Ayazi ,  Gianlorenzo Masini ,  Subal Sahni ,  Attila Mekis ,  Thierry Pinguet

IPC: G02F1/025 ,  G02F1/225 ,  G02F1/21

Abstract: Methods and systems for a low-parasitic silicon high-speed phase modulator are disclosed and may include fabricating an optical phase modulator that comprises a PN junction waveguide formed in a silicon layer, wherein the silicon layer may be on an oxide layer and the oxide layer may be on a silicon substrate. The PN junction waveguide may have p-doped and n-doped regions on opposite sides along a length of the PN junction waveguide, and portions of the p-doped and n-doped regions may be removed. Contacts may be formed on remaining portions of the p-doped and n-doped regions. Portions of the p-doped and n-doped regions may be removed symmetrically about the PN junction waveguide. Portions of the p-doped and n-doped regions may be removed in a staggered fashion along the length of the PN junction waveguide. Etch transition features may be removed along the p-doped and n-doped regions.

公开(公告)号：US20160352431A1

公开(公告)日：2016-12-01

申请号：US15231332

申请日：2016-08-08

Applicant: Luxtera, Inc.

Inventor： Gianlorenzo Masini ,  Subal Sahni

IPC: H04B10/60 ,  G01J1/44 ,  H01L31/0368 ,  H01L31/0224 ,  H01L31/11 ,  H01L31/028

CPC classification number: H04B10/60 ,  G01J1/44 ,  G01J2001/446 ,  H01L31/022408 ,  H01L31/028 ,  H01L31/03682 ,  H01L31/1105 ,  H03F3/08

Abstract: A method and system for optoelectronic receivers utilizing waveguide heterojunction phototransistors (HPTs) integrated in a wafer are disclosed and may include receiving optical signals via optical fibers operably coupled to a top surface of the chip. Electrical signals may be generated utilizing HPTs that detect the optical signals. The electrical signals may be amplified via voltage amplifiers, or transimpedance amplifiers, the outputs of which may be utilized to bias the HPTs by a feedback network. The optical signals may be coupled into opposite ends of the HPTs. A collector of the HPTs may comprise a silicon layer and a germanium layer, a base may comprise a silicon germanium alloy with germanium composition ranging from 70% to 100%, and an emitter including crystalline or poly Si or SiGe. The optical signals may be demodulated by communicating a mixer signal to a base terminal of the HPTs.

Abstract translation: 公开了利用集成在晶片中的波导异质结光电晶体管（HPT）的光电子接收器的方法和系统，并且可以包括通过可操作地耦合到芯片顶表面的光纤接收光信号。 可以利用检测光信号的HPT产生电信号。 电信号可以经由电压放大器或跨阻放大器来放大，其输出可用于通过反馈网络偏置HPT。 光信号可以耦合到HPT的相对端。 HPT的集电极可以包括硅层和锗层，碱可以包括具有70％至100％的锗组成的硅锗合金，以及包括晶体或多晶硅或SiGe的发射极。 可以通过将混合器信号传送到HPT的基站来解调光信号。

公开(公告)号：US20160320576A1

公开(公告)日：2016-11-03

申请号：US15205400

申请日：2016-07-08

Applicant: Luxtera, Inc.

Inventor： Michael Mack ,  Subal Sahni ,  Steffen Gloeckner

IPC: G02B6/42 ,  H04B10/079 ,  G02B6/32

CPC classification number: G02B6/4286 ,  G02B6/32 ,  G02B6/34 ,  G02B6/4206 ,  G02B6/4214 ,  H04B10/07955 ,  H04B10/25

Abstract: Methods and systems for optical power monitoring of a light source assembly coupled to a silicon photonically-enabled integrated circuit (chip) are disclosed and may include, in a system comprising an optical source assembly coupled to the chip: emitting a primary beam from a front facet of a laser in the optical source assembly and a secondary beam from a back facet of the laser, directing the primary beam to an optical coupler in the chip, directing the secondary beam to a surface-illuminated photodiode in the chip, and monitoring an output power of the laser utilizing an output signal from the photodiode. The primary beam may comprise an optical source for a photonics transceiver in the chip. The focused primary beam and the secondary beam may be directed to the chip using reflectors in a lid of the optical source assembly.

公开(公告)号：US20160155884A1

公开(公告)日：2016-06-02

申请号：US14926916

申请日：2015-10-29

Applicant: Luxtera, Inc.

Inventor： Kam-Yan Hon ,  Gianlorenzo Masini ,  Subal Sahni

IPC: H01L31/11 ,  H01L31/0352 ,  H01L31/028

Abstract: Methods and systems for germanium-on-silicon photodetectors without germanium layer contacts are disclosed and may include, in a semiconductor die having a photodetector, where the photodetector includes an n-type silicon layer, a germanium layer, a p-type silicon layer, and a metal contact on each of the n-type silicon layer and the p-type silicon layer: receiving an optical signal, absorbing the optical signal in the germanium layer, generating an electrical signal from the absorbed optical signal, and communicating the electrical signal out of the photodetector via the n-type silicon layer and the p-type silicon layer. The photodetector may include a horizontal or vertical junction double heterostructure where the germanium layer is above the n-type and p-type silicon layers. An intrinsically-doped silicon layer may be below the germanium layer between the n-type silicon layer and the p-type silicon layer. A top portion of the germanium layer may be p-doped.

Abstract translation: 公开了没有锗层接触的锗硅上光电探测器的方法和系统，并且可以包括在具有光电检测器的半导体管芯中，其中光电检测器包括n型硅层，锗层，p型硅层， 以及在n型硅层和p型硅层中的每一个上的金属接触：接收光信号，吸收锗层中的光信号，从吸收的光信号产生电信号，并传送电信号 通过n型硅层和p型硅层离开光电检测器。 光电检测器可以包括水平或垂直结双异质结构，其中锗层在n型和p型硅层之上。 本征掺杂的硅层可以在n型硅层和p型硅层之间的锗层的下方。 锗层的顶部可以是p掺杂的。

公开(公告)号：US20150381273A1

公开(公告)日：2015-12-31

申请号：US14752729

申请日：2015-06-26

Applicant: Luxtera, Inc.

Inventor： Steffen Gloeckner ,  Subal Sahni ,  Joseph Balardeta ,  Simon Pang ,  Scott Denton

IPC: H04B10/077 ,  H04L1/24 ,  H04B10/40

CPC classification number: H04L1/243 ,  H04B10/0779 ,  H04B10/40 ,  H04B10/801 ,  H04L1/244

Abstract: Methods and systems for an optoelectronic built-in self-test (BIST) system for silicon photonics optical transceivers are disclosed and may include, in an optoelectronic transceiver having a transmit (Tx) path and a receive (Rx) path, where the Rx path includes a main Rx path and a BIST loopback path: generating a pseudo-random bit sequence (PRBS) signal, generating an optical signal in the Tx path by applying the PRBS signal to a modulator, communicating the optical signal to the BIST loopback path and converting to an electrical signal utilizing a photodetector, the photodetector being a replica of a photodetector in the main Rx path, and assessing the performance of the Tx and Rx paths by extracting a PRBS signal from the electrical signal. The transceiver may be a single complementary-metal oxide semiconductor (CMOS) die or in two CMOS die, where a first comprises electronic devices and a second comprises optical devices.

Abstract translation: 公开了用于硅光子学光收发器的光电内置自测（BIST）系统的方法和系统，并且可以包括在具有发射（Tx）路径和接收（Rx）路径的光电收发器中，其中Rx路径 包括主Rx路径和BIST环回路径：产生伪随机位序列（PRBS）信号，通过将PRBS信号施加到调制器来产生Tx路径中的光信号，将光信号传送到BIST环回路径，以及 利用光电检测器转换为电信号，所述光电检测器是主Rx路径中的光电检测器的复制品，并且通过从电信号提取PRBS信号来评估Tx和Rx路径的性能。 收发器可以是单个互补金属氧化物半导体（CMOS）管芯或两个CMOS管芯，其中第一个包括电子器件，第二个包括光学器件。

公开(公告)号：US10892845B2

公开(公告)日：2021-01-12

申请号：US16512983

申请日：2019-07-16

Applicant: Luxtera, Inc.

Inventor： Mark Peterson ,  Subal Sahni ,  Peter De Dobbelaere

IPC: H04B10/00 ,  H04J14/02 ,  H04B10/40 ,  G02B6/42 ,  G02B6/293 ,  H04J14/00

Abstract: Methods and systems for a free space CWDM MUX/DEMUX for integration with a grating coupler based silicon platform may include an optical assembly coupled to a photonic chip. The optical assembly includes a lens array on the top surface of the chip, an angled mirror, a transparent spacer, and a plurality of thin film filters. The optical assembly may receive an input optical signal comprising a plurality of optical signals at different wavelengths via an optical fiber coupled to the optical assembly, communicate the plurality of optical signals through the transparent spacer, pass a first of the plurality of optical signals through a corresponding one of the plurality of thin film filters while reflecting others of the plurality of optical signals back into the transparent spacer, and reflect the others of the plurality of signals towards a second of the plurality of thin film filters.

公开(公告)号：US10735100B2

公开(公告)日：2020-08-04

申请号：US16519533

申请日：2019-07-23

Applicant: Luxtera, Inc.

Inventor： Michael Mack ,  Anders Dahl ,  Subal Sahni ,  Steffen Gloeckner

IPC: H04B10/00 ,  H04B10/40 ,  G02B6/42 ,  G02B6/124 ,  G02B6/028 ,  H04B10/2581 ,  H01L21/68 ,  H05K13/04 ,  G02B6/12

Abstract: Methods and systems for optical alignment to a silicon photonically-enabled integrated circuit may include aligning an optical assembly to a photonics die comprising a transceiver by, at least, communicating optical signals from the optical assembly into a plurality of grating couplers in the photonics die, communicating the one or more optical signals from the plurality of grating couplers to optical taps, with each tap having a first output coupled to the transceiver and a second output coupled to a corresponding output grating coupler, and monitoring an output optical signal communicated out of said photonic chip via said output grating couplers. The monitored output optical signal may be maximized by adjusting a position of the optical assembly. The optical assembly may include an optical source assembly comprising one or more lasers or the optical assembly may comprise a fiber array. Such a fiber array may include single mode optical fibers.