公开(公告)号：US06891746B2

公开(公告)日：2005-05-10

申请号：US10351013

申请日：2003-01-25

申请人： Lung T. Tran ,  Manish Sharma

发明人： Lung T. Tran ,  Manish Sharma

IPC分类号： G11C11/15 ,  G11C11/16 ,  H01L21/8246 ,  H01L27/105 ,  H01L43/08 ,  G11C11/14

CPC分类号： G11C11/16

摘要： A magneto-resistive device includes first and second ferromagnetic layers having different coercivities, and a spacer layer between the first and second layers. Each ferromagnetic layer has a magnetization that can be oriented in either of two directions.

摘要翻译： 磁阻装置包括具有不同矫顽力的第一和第二铁磁层以及第一和第二层之间的间隔层。 每个铁磁层具有可以在两个方向中的任一方向上取向的磁化。

公开(公告)号：US20050083728A1

公开(公告)日：2005-04-21

申请号：US10690372

申请日：2003-10-21

申请人： Manish Sharma

发明人： Manish Sharma

IPC分类号： G06F3/041 ,  G06F3/03 ,  G06F3/033 ,  G06F3/046 ,  G11C11/00 ,  G11C11/15 ,  G11C11/16 ,  H01L21/8246 ,  H01L27/105 ,  H01L27/22 ,  H01L43/08

CPC分类号： G06F3/046 ,  G11C11/16

摘要： This invention provides a soft-reference magnetic memory digitizing device. In a particular embodiment the digitizing device includes an array of soft-reference magnetic memory cells. Each memory cell has at least one ferromagnetic sense layer characterized by an alterable orientation of magnetization, the orientation changing upon the substantially proximate application of at east one externally-applied magnetic field as may be provided by a magnetically tipped stylus. Each memory cell also provides at least one ferromagnetic soft-reference layer having a non-pinned orientation of magnetization. An intermediate layer forming a magnetic tunnel junction is placed between the sense layer and soft-reference layer. The orientation of the sense layer is not substantially affected by the soft-reference layer. A related method of use involving a magnetic stylus is also provided.

摘要翻译： 本发明提供一种软参考磁存储数字化装置。 在特定实施例中，数字化装置包括软参考磁存储单元的阵列。 每个存储器单元具有至少一个铁磁感应层，其特征在于磁化方向的可变方向，该方向在基本上接近施加在东侧一个外部施加的磁场上可能由磁性尖头的触笔提供。 每个存储单元还提供至少一个铁磁软参考层，其具有非固定取向的磁化。 形成磁性隧道结的中间层被放置在感测层和软参考层之间。 感测层的取向基本上不受软参考层的影响。 还提供了涉及磁性笔的相关使用方法。

公开(公告)号：US06803274B2

公开(公告)日：2004-10-12

申请号：US10233109

申请日：2002-08-30

申请人： Manish Sharma ,  Lung Tran

发明人： Manish Sharma ,  Lung Tran

IPC分类号： H01L21336

CPC分类号： H01L27/222 ,  H01L43/12

摘要： An exemplary nonvolatile memory array comprises a substrate and a plurality of memory cells formed on the substrate, each of the memory cells being addressable via at least first and second conductors during operations. An exemplary memory cell in the exemplary memory array includes a ferromagnetic annular data layer having an opening, the opening enabling the second conductor to electrically contact the first conductor, an intermediate layer on at least a portion of the annular data layer, and a soft reference layer on at least a portion of the intermediate layer.

摘要翻译： 示例性非易失性存储器阵列包括衬底和形成在衬底上的多个存储器单元，每个存储器单元可在操作期间通过至少第一和第二导体寻址。 示例性存储器阵列中的示例性存储器单元包括具有开口的铁磁环形数据层，该开口使得第二导体能够电接触第一导体，环形数据层的至少一部分上的中间层和软参考 层在中间层的至少一部分上。

公开(公告)号：US06795281B2

公开(公告)日：2004-09-21

申请号：US09963933

申请日：2001-09-25

申请人： Lung Tran ,  Manish Sharma ,  Manoj Bhattacharyya

发明人： Lung Tran ,  Manish Sharma ,  Manoj Bhattacharyya

IPC分类号： H01L2984

CPC分类号： B82Y25/00 ,  G11C11/16 ,  H01F10/3277

摘要： A memory device includes a data layer having a magnetization that can be oriented in first and second directions; and a synthetic ferrimagnet reference layer. The data and reference layers have different coercivities.

摘要翻译： 存储器件包括具有可以在第一和第二方向上定向的磁化的数据层; 和合成亚铁磁参考层。 数据和参考层具有不同的矫顽力。

公开(公告)号：US06538920B2

公开(公告)日：2003-03-25

申请号：US09825093

申请日：2001-04-02

申请人： Manish Sharma ,  Lung T. Tran

发明人： Manish Sharma ,  Lung T. Tran

IPC分类号： G11C1114

CPC分类号： H01L43/08 ,  B82Y25/00 ,  G11C11/15 ,  G11C11/16 ,  H01F10/3254 ,  H01F10/3268 ,  H01L27/222

摘要： A magnetic memory cell having read conductor that is wholly clad with a high magnetic permeability soft magnetic material for a pinned-on-the-fly soft ferromagnetic reference layer is disclosed. The magnetic memory cell includes a ferromagnetic data layer, an intermediate layer formed on the ferromagnetic data layer, and a soft ferromagnetic reference layer formed on the intermediate layer. The soft ferromagnetic reference layer includes a read conductor and a ferromagnetic cladding that completely surrounds the read conductor to form a cladded read conductor. The soft ferromagnetic reference layer has a non-pinned orientation of magnetization. When an externally supplied read current flows through the read conductor, the read conductor generates a magnetic field that does not saturate the ferromagnetic cladding and is substantially contained within the ferromagnetic cladding and is operative to dynamically pin the orientation of magnetization in a desired direction. Optionally, the soft ferromagnetic reference layer can include a ferromagnetic cap layer positioned between the ferromagnetic cladding and the intermediate layer and magnetically coupled with the ferromagnetic cladding. A bit of data stored in the ferromagnetic data layer is read by measuring a resistance between the ferromagnetic data layer and the soft ferromagnetic reference layer. The ferromagnetic cladding substantially reduces fringe magnetic fields, reduces the number and complexity of the of layers needed to form a prior pinned reference layer, and reduces a magnitude of the read current sufficient to read the bit of data.

摘要翻译： 公开了一种具有读取导体的磁存储单元，其全部包裹有用于固定在飞行中的软铁磁参考层的高磁导率软磁材料。 磁存储单元包括铁磁数据层，形成在铁磁数据层上的中间层和形成在中间层上的软铁磁参考层。 软铁磁参考层包括完全包围读取导体以形成包层读取导体的读取导体和铁磁包层。 软铁磁参考层具有非固定取向的磁化。 当外部提供的读取电流流过读取导体时，读取导体产生不使铁磁性包层饱和并且基本上包含在铁磁包层内的磁场，并且可操作以在期望的方向上动态地引导磁化取向。 可选地，软铁磁参考层可以包括位于铁磁包层和中间层之间并与铁磁包层磁耦合的铁磁盖层。 通过测量铁磁数据层和软铁磁参考层之间的电阻来读取存储在铁磁数据层中的一些数据。 铁磁包层基本上减少了边缘磁场，减少了形成先前固定参考层所需的层的数量和复杂性，并且减小了足以读取数据位的读取电流的大小。

公开(公告)号：US06473337B1

公开(公告)日：2002-10-29

申请号：US09983404

申请日：2001-10-24

申请人： Lung T. Tran ,  Manish Sharma ,  Thomas C. Anthony

发明人： Lung T. Tran ,  Manish Sharma ,  Thomas C. Anthony

IPC分类号： G11C1115

CPC分类号： H01L27/222 ,  G11C11/15

摘要： A memory device includes dual tunnel junction memory cells having a magnetic tunnel junction in series with a tunnel junction. The magnetic tunnel junction can be changed from a first resistance state to a second resistance state during a write operation. The magnetic tunnel junction can have a differing resistance-voltage characteristic than the tunnel junction, and the differing resistance-voltage characteristics allow the magnetic tunnel junction to be blown without blowing the tunnel junction during a write operation. The change in resistance state of the magnetic tunnel junction changes the resistance of the selected memory cell, which is detectable during a read operation.

摘要翻译： 存储器件包括双隧道结存储器单元，其具有与隧道结串联的磁性隧道结。 在写入操作期间，磁性隧道结可以从第一电阻状态改变到第二电阻状态。 磁性隧道结可以具有与隧道结不同的电阻 - 电压特性，并且不同的电阻 - 电压特性允许磁性隧道结在写入操作期间不会吹动隧道结而被吹动。 磁性隧道结的电阻状态的改变改变了所选择的存储单元的电阻，这在读取操作期间是可检测的。

公开(公告)号：US06470120B2

公开(公告)日：2002-10-22

申请号：US09736789

申请日：2000-12-13

申请人： Evan D. H. Green ,  Manish Sharma

发明人： Evan D. H. Green ,  Manish Sharma

IPC分类号： G02B626

CPC分类号： G02B6/3843 ,  G02B6/4204 ,  G02B6/422 ,  G02B6/4225 ,  G02B6/4226 ,  G02B6/4227

摘要： Apparatus and associated method for aligning optical components including lenses, filters, lasers, fiber optics, etc. The apparatus aligns a first optic element and a second optic element and includes a frame and a sleeve. The frame defines a frame bore along a longitudinal axis thereof. The sleeve defines an eccentric bore configured to contain the first optic element or the second optic element. The sleeve is rotatably coupled in the frame bore to align the first optic element with the second optic element in a plane intersected by the longitudinal axis.

摘要翻译： 用于对准包括透镜，滤光器，激光器，光纤等的光学部件的装置和相关方法。该装置对准第一光学元件和第二光学元件，并且包括框架和套筒。 框架沿其纵向轴线限定框架孔。 套筒限定了配置成容纳第一光学元件或第二光学元件的偏心孔。 套筒可旋转地联接在框架孔中，以将第一光学元件与第二光学元件对准在与纵向轴线相交的平面中。

公开(公告)号：US06404674B1

公开(公告)日：2002-06-11

申请号：US09825461

申请日：2001-04-02

申请人： Thomas C. Anthony ,  Manish Sharma

发明人： Thomas C. Anthony ,  Manish Sharma

IPC分类号： G11C1115

CPC分类号： G11C11/16 ,  B82Y10/00 ,  H01L27/222

摘要： A magnetic memory cell having read-write conductor that is wholly clad with a high magnetic permeability soft magnetic material for a pinned-on-the-fly soft ferromagnetic reference layer is disclosed. The magnetic memory cell includes a ferromagnetic data layer, an intermediate layer formed on the ferromagnetic data layer, and a soft ferromagnetic reference layer having a non-pinned orientation of magnetization formed on the intermediate layer. The soft ferromagnetic reference layer includes a read-write conductor and a ferromagnetic cladding that completely surrounds the read-write conductor to form a cladded read-write conductor. During a read operation, a read current flowing through the read-write conductor generates a read magnetic field that does not saturate the ferromagnetic cladding. During a write operation, a write current flowing through the read-write conductor generates a write magnetic field that saturates the ferromagnetic cladding and extends to the ferromagnetic data layer.

摘要翻译： 公开了一种具有读写导体的磁存储单元，该导体全部用高导磁率的软磁材料包覆在一个固定的软铁磁参考层上。 磁存储单元包括铁磁数据层，形成在铁磁数据层上的中间层和在中间层上形成的具有非磁化取向的磁化铁磁参考层。 软铁磁参考层包括完全包围读写导体以形成包层读写导体的读写导体和铁磁包层。 在读操作期间，流经读写导体的读电流产生不使铁磁包层饱和的读磁场。 在写入操作期间，流过读写导体的写入电流产生使铁磁包层饱和并延伸到铁磁数据层的写入磁场。

公开(公告)号：US5432602A

公开(公告)日：1995-07-11

申请号：US211717

申请日：1994-04-25

申请人： Manish Sharma ,  Hiroyuki Ibe

发明人： Manish Sharma ,  Hiroyuki Ibe

IPC分类号： G01J3/12 ,  G01J9/00 ,  G01J3/28

CPC分类号： G01J9/00 ,  G01J2003/1265

摘要： A small-sized, inexpensive light wavelength measuring apparatus which has no mechanical movable sections but which is capable of high-speed measurement and high measurement precision to improve in reliability. In the light wavelength measuring apparatus, the intensity of incoming light is modulated by a light modulator in response to a reference signal supplied from a signal source and the modulation light is provided with a delay corresponding to the wavelength thereof through a group delay dispersion medium. The light is then converted into an electrical signal by a photoelectric converter, and a phase difference between the electrical signal and reference signal is obtained by a phase comparator, thereby measuring the wavelength of the incoming light.

摘要翻译： PCT No.PCT / JP93 / 01187 Sec。 371日期1994年04月25日 102（e）日期1994年4月25日PCT提交1993年8月25日PCT公布。 出版物WO94 / 04894 日期：1994年3月3日。一种小型，便宜的光波长测量装置，其不具有机械可移动部分，但能够进行高速测量和高测量精度，以提高可靠性。 在光波长测量装置中，响应于从信号源提供的参考信号，由光调制器调制入射光的强度，并且通过组延迟分散介质向调制光提供与其波长相对应的延迟。 然后通过光电转换器将光转换成电信号，并且通过相位比较器获得电信号和参考信号之间的相位差，从而测量入射光的波长。

公开(公告)号：US09163946B2

公开(公告)日：2015-10-20

申请号：US12510965

申请日：2009-07-28

申请人： Mahesh Chowdhary ,  Arun Kumar ,  Manish Sharma ,  Kolin Paul ,  Mahaveer Jain ,  Gagan Narula

发明人： Mahesh Chowdhary ,  Arun Kumar ,  Manish Sharma ,  Kolin Paul ,  Mahaveer Jain ,  Gagan Narula

IPC分类号： G01C17/00 ,  G01C21/16 ,  G01C21/20

CPC分类号： G01C21/165 ,  G01C21/20

摘要： A method and apparatus of detecting and using motion modes in a mobile device is described. Movement data is collected from an inertial motion unit (IMU) of the mobile device and compared to two or more sets of training data, each set of training data corresponding to a different motion mode. Then, a motion mode is determined to be the current mode of the mobile device on the results of the comparison. The motion mode is used by the mobile device in a variety of applications.

摘要翻译： 描述了一种在移动设备中检测和使用运动模式的方法和装置。 从移动设备的惯性运动单元（IMU）收集移动数据，并与两组或多组训练数据进行比较，每组训练数据对应于不同的运动模式。 然后，将运动模式确定为比较结果的移动设备的当前模式。 运动模式由移动设备在各种应用中使用。