摘要:
A semiconductor-based all optical wavelength converter is disclosed. An apparatus according to aspects of the present invention includes an optical waveguide disposed in semiconductor material. An optical pump source is optically coupled to direct an optical pump beam having a first wavelength into the optical waveguide. The optical waveguide is further optically coupled to receive an input optical beam having a second wavelength. The optical waveguide is optically coupled to generate an output optical beam having a third wavelength in response to the optical pump beam and the input optical beam in the optical waveguide. A diode structure is disposed in the optical waveguide. The diode structure includes at least P and N regions. The diode structure is biased to generate an electric field to remove free carriers from an optical path through the optical waveguide generated in response to two photon absorption in the optical waveguide.
摘要:
A Raman ring resonator based laser and wavelength converter method and apparatus. In one aspect of the present invention, the disclosed method includes directing a first optical beam of a first wavelength and a first power level into a first ring resonator defined in a semiconductor material. Emission of a second optical beam of a second wavelength is caused in the first ring resonator by propagating the first optical beam around the first ring resonator. The first power level is sufficient to cause the emission of the second optical beam. The first optical beam is directed out of the first ring resonator after a round trip of the first optical beam around the first ring resonator. The second optical beam is recirculated around the first ring resonator to further stimulate the emission of the second optical beam in the first ring resonator.
摘要:
An apparatus and method for modulating a phase of optical beam independent of polarization. In one embodiment, an apparatus according to embodiments of the present invention includes a first region of an optical waveguide disposed in semiconductor material, the first region having a first conductivity type, and a second region of the optical waveguide disposed in the semiconductor material, the second region having a second conductivity type opposite to the first conductivity type. The apparatus also includes a substantially V shaped insulating region disposed between the first and second regions of the optical waveguide, wherein a vertex of the substantially V shaped insulating region forms an intersecting line that is substantially parallel to an optical path of an optical beam to be directed through the optical waveguide.
摘要:
A semiconductor-based laser tuning method and apparatus. In one aspect of the present invention, an apparatus according to an embodiment of the present invention includes a gain medium disposed in a semiconductor substrate. A laser cavity is disposed in the semiconductor substrate and is optically coupled to the gain medium. A first reflector defines one end of the laser cavity. The first reflector includes a first tunable Bragg grating disposed in the semiconductor substrate. The first tunable Bragg grating includes a first plurality of silicon and polysilicon interfaces along the semiconductor substrate such that there is a first plurality of perturbations of a refractive index along the Bragg grating. The first tunable Bragg grating selectively reflects light having a tunable center wavelength so as to emit light through stimulated emission having the tunable center wavelength in the laser cavity. A second reflector defines an other end of the laser cavity.
摘要:
A device for switching an optical beam. In one embodiment, the disclosed optical switching device includes an array of trench capacitors providing a phase array disposed between an optical input port and an optical output port in a semiconductor substrate of an integrated circuit die. In one embodiment, the trench capacitors are biased with control circuitry disposed in the semiconductor substrate on the same integrated circuit die. In one embodiment, the array of trench capacitors are biased by the control circuitry to control a charge distribution in the array to switch an optical beam passing from the optical input port through the array of trench capacitors to the optical output port. In another embodiment, there are a plurality of N optical output ports opposite the optical input port and a phase array is provided by the array of trench capacitors. The array of trench capacitors is biased to control a charge distribution across the phase array. Thus, an incident optical beam from the optical input port is selectively directed to any one of the plurality of N optical output ports. In yet another embodiment, there are a plurality of M optical input ports and corresponding phase arrays opposite the plurality of M optical output ports to provide an M×N optical switch.
摘要:
An integrated circuit device having an embedded heat slug. The integrated circuit device comprises, in one embodiment, a semiconductor substrate having a frontside surface and backside surface. The semiconductor substrate includes an integrated circuit on the frontside surface. A heat slug is disposed in an opening in the backside surface of the semiconductor substrate adjacent the integrated circuit.
摘要:
Devices and techniques for integrating a silicon superlattice optical modulator on a silicon substrate with other circuit elements. The superlattice structure is designed to convert the indirect bandgap structure of silicon into a direct bandgap structure to achieve more efficient optical absorption. The modulator can be fabricated based on a structure of a circuit element by using standard fabrication processes for silicon integrated circuits such as metal oxide semiconductor processing.
摘要:
An apparatus for reducing the reflection of photons off the surface of a semiconductor device under test. In one embodiment, the present invention includes a semiconductor device comprising an integrated circuit formed on the top side of a semiconductor substrate. An anti-reflective coating is disposed over the back side of the semiconductor substrate for reducing the reflection of photons at the silicon/air interface.
摘要:
A semiconductor waveguide based optical receiver is disclosed. An apparatus according to aspects of the present invention includes an absorption region including a first type of semiconductor region proximate to a second type of semiconductor region. The first type of semiconductor is to absorb light in a first range of wavelengths and the second type of semiconductor to absorb light in a second range of wavelengths. A multiplication region is defined proximate to and separate from the absorption region. The multiplication region includes an intrinsic semiconductor region in which there is an electric field to multiply the electrons created in the absorption region.
摘要:
A broadband receiving apparatus includes an antenna to receive a radio signal having a plurality of modulation frequencies. An amplifier drives a laser source from the broadband radio signal to produce an optical signal having a plurality of spectral components. A diffraction grating transforms the optical signal into its spectral components. An array of photo-detectors converts the spectral components into electronic signals corresponding to the plurality of modulation frequencies. A transmitting apparatus includes an array of coherent laser emitters driven by electronic signals corresponding to a plurality of modulation frequencies to produce optical signals corresponding to a plurality of spectral components. A diffraction grating inverse transforms the spectral components into a composite optical signal. A photo-detector converts the composite optical signal into a composite electronic signal including the plurality of modulation frequencies. An amplifier amplifies the composite electronic signal for transmission as a broadband radio signal.