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公开(公告)号：US20060063318A1
公开(公告)日：2006-03-23
申请号：US10938778
申请日：2004-09-10
申请人： Suman Datta , Jack Kavalieros , Mark Doczy , Matthew Metz , Marko Radosavljevic , Amlan Majumdar , Justin Brask , Robert Chau
发明人： Suman Datta , Jack Kavalieros , Mark Doczy , Matthew Metz , Marko Radosavljevic , Amlan Majumdar , Justin Brask , Robert Chau
IPC分类号： H01L21/336 , H01L21/8234
CPC分类号： H01L51/102 , B82Y10/00 , H01L51/0048 , H01L51/0052 , H01L51/0545 , H01L51/105
摘要： Ambipolar conduction can be reduced in carbon nanotube transistors by forming a gate electrode of a metal. Metal sidewall spacers having different workfunctions than the gate electrode may be formed to bracket the metal gate electrode.
摘要翻译： 通过形成金属的栅电极，可以在碳纳米管晶体管中减少双极传导。 可以形成具有与栅电极不同的功函数的金属侧壁间隔物以支撑金属栅电极。
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公开(公告)号：US20090289245A1
公开(公告)日：2009-11-26
申请号：US11524067
申请日：2006-09-19
IPC分类号： H01L29/66 , H01L21/336
CPC分类号： H01L29/127 , B82Y10/00 , H01L29/0665 , H01L29/0673 , H01L51/0048 , H01L51/0508 , H01L51/0512 , Y10S977/72 , Y10S977/721 , Y10S977/742 , Y10S977/858 , Y10S977/859
摘要： Faceted catalytic dots are used for directing the growth of carbon nanotubes. In one example, a faceted dot is formed on a substrate for a microelectronic device. A growth promoting dopant is applied to a facet of the dot using an angled implant, and a carbon nanotube is grown on the doped facet of the dot.
摘要翻译： 方面的催化点用于指导碳纳米管的生长。 在一个示例中，在微电子器件的基板上形成刻面点。 使用成角度的植入物将生长促进掺杂剂施加到点的小平面，并且在点的掺杂面上生长碳纳米管。
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公开(公告)号：US07638383B2
公开(公告)日：2009-12-29
申请号：US11524067
申请日：2006-09-19
IPC分类号： H01L21/336 , H01L21/8234
CPC分类号： H01L29/127 , B82Y10/00 , H01L29/0665 , H01L29/0673 , H01L51/0048 , H01L51/0508 , H01L51/0512 , Y10S977/72 , Y10S977/721 , Y10S977/742 , Y10S977/858 , Y10S977/859
摘要： Faceted catalytic dots are used for directing the growth of carbon nanotubes. In one example, a faceted dot is formed on a substrate for a microelectronic device. A growth promoting dopant is applied to a facet of the dot using an angled implant, and a carbon nanotube is grown on the doped facet of the dot.
摘要翻译： 方面的催化点用于指导碳纳米管的生长。 在一个示例中，在微电子器件的基板上形成刻面点。 使用成角度的植入物将生长促进掺杂剂施加到点的小平面，并且在点的掺杂面上生长碳纳米管。
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公开(公告)号：US08344425B2
公开(公告)日：2013-01-01
申请号：US12655463
申请日：2009-12-30
申请人： Marko Radosavljevic , Uday Shah , Gilbert Dewey , Niloy Mukherjee , Robert S. Chau , Jack Kavalieros , Ravi Pillarisetty , Titash Rakshit , Matthew V. Metz
发明人： Marko Radosavljevic , Uday Shah , Gilbert Dewey , Niloy Mukherjee , Robert S. Chau , Jack Kavalieros , Ravi Pillarisetty , Titash Rakshit , Matthew V. Metz
IPC分类号： H01L29/12 , H01L21/20 , H01L21/336 , H01L21/18
CPC分类号： H01L29/0665 , B82Y10/00 , B82Y40/00 , H01L29/0673 , H01L29/42364 , H01L29/66462 , H01L29/66795 , H01L29/7786 , H01L29/785
摘要： Methods of forming microelectronic structures are described. Embodiments of those methods include forming a III-V tri-gate fin on a substrate, forming a cladding material around the III-V tri-gate fin, and forming a hi k gate dielectric around the cladding material.
摘要翻译： 描述形成微电子结构的方法。 这些方法的实施例包括在基板上形成III-V三栅极翅片，在III-V三栅极鳍周围形成包层材料，以及在包层材料周围形成Hi栅极电介质。
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公开(公告)号：US20110156004A1
公开(公告)日：2011-06-30
申请号：US12655463
申请日：2009-12-30
申请人： Marko Radosavljevic , Uday Shah , Gilbert Dewey , Niloy Mukherjee , Robert S. Chau , Jack Kavalieros , Ravi Pillarisetty , Titash Rakshit , Matthew V. Metz
发明人： Marko Radosavljevic , Uday Shah , Gilbert Dewey , Niloy Mukherjee , Robert S. Chau , Jack Kavalieros , Ravi Pillarisetty , Titash Rakshit , Matthew V. Metz
IPC分类号： H01L29/775 , H01L21/20 , H01L21/336
CPC分类号： H01L29/0665 , B82Y10/00 , B82Y40/00 , H01L29/0673 , H01L29/42364 , H01L29/66462 , H01L29/66795 , H01L29/7786 , H01L29/785
摘要： Methods of forming microelectronic structures are described. Embodiments of those methods include forming a III-V tri-gate fin on a substrate, forming a cladding material around the III-V tri-gate fin, and forming a hi k gate dielectric around the cladding material.
摘要翻译： 描述形成微电子结构的方法。 这些方法的实施例包括在基板上形成III-V三栅极翅片，在III-V三栅极鳍周围形成包层材料，以及在包层材料周围形成Hi栅极电介质。
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公开(公告)号：US09006707B2
公开(公告)日：2015-04-14
申请号：US11712191
申请日：2007-02-28
IPC分类号： H01L29/06 , H01L21/8238 , H01L21/8252 , B82Y10/00 , H01L21/8258 , H01L27/06 , H01L29/04
CPC分类号： H01L21/823807 , B82Y10/00 , H01L21/02381 , H01L21/02463 , H01L21/02546 , H01L21/8252 , H01L21/8258 , H01L27/0605 , H01L29/045 , H01L29/0665 , H01L29/0673 , H01L29/151 , H01L29/201 , H01L29/207 , H01L29/365
摘要： In one embodiment, the present invention includes a method for forming a logic device, including forming an n-type semiconductor device over a silicon (Si) substrate that includes an indium gallium arsenide (InGaAs)-based stack including a first buffer layer, a second buffer layer formed over the first buffer layer, a first device layer formed over the second buffer layer. Further, the method may include forming a p-type semiconductor device over the Si substrate from the InGaAs-based stack and forming an isolation between the n-type semiconductor device and the p-type semiconductor device. Other embodiments are described and claimed.
摘要翻译： 在一个实施例中，本发明包括一种用于形成逻辑器件的方法，包括在硅（Si）衬底上形成n型半导体器件，该衬底包括基于砷化铟镓（InGaAs）的堆叠，其包括第一缓冲层， 形成在第一缓冲层上的第二缓冲层，形成在第二缓冲层上的第一器件层。 此外，该方法可以包括从基于InGaAs的叠层在Si衬底上形成p型半导体器件，并且在n型半导体器件和p型半导体器件之间形成隔离。 描述和要求保护其他实施例。
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37.发明授权Transistor for non volatile memory devices having a carbon nanotube channel and electrically floating quantum dots in its gate dielectric 失效用于在其栅极电介质中具有碳纳米管通道和电浮置量子点的非易失性存储器件的晶体管公开(公告)号：US07608883B2
公开(公告)日：2009-10-27
申请号：US12072971
申请日：2008-02-28
申请人： Marko Radosavljevic , Amlan Majumdar , Suman Datta , Justin Brask , Brian Doyle , Robert Chau
发明人： Marko Radosavljevic , Amlan Majumdar , Suman Datta , Justin Brask , Brian Doyle , Robert Chau
IPC分类号： H01L29/76
CPC分类号： G11C13/025 , B82Y10/00 , G11C2213/17 , H01L29/78696 , H01L51/0048 , H01L51/0541
摘要： A transistor is described having a source electrode and a drain electrode. The transistor has at least one semiconducting carbon nanotube that is electrically coupled between the source and drain electrodes. The transistor has a gate electrode and dielectric material containing one or more quantum dots between the carbon nanotube and the gate electrode.
摘要翻译： 描述了具有源电极和漏电极的晶体管。 晶体管具有至少一个电耦合在源极和漏极之间的半导体碳纳米管。 晶体管具有在碳纳米管和栅电极之间含有一个或多个量子点的栅电极和电介质材料。
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公开(公告)号：US20080203381A1
公开(公告)日：2008-08-28
申请号：US11712191
申请日：2007-02-28
IPC分类号： H01L29/06 , H01L21/8238
CPC分类号： H01L21/823807 , B82Y10/00 , H01L21/02381 , H01L21/02463 , H01L21/02546 , H01L21/8252 , H01L21/8258 , H01L27/0605 , H01L29/045 , H01L29/0665 , H01L29/0673 , H01L29/151 , H01L29/201 , H01L29/207 , H01L29/365
摘要： In one embodiment, the present invention includes a method for forming a logic device, including forming an n-type semiconductor device over a silicon (Si) substrate that includes an indium gallium arsenide (InGaAs)-based stack including a first buffer layer, a second buffer layer formed over the first buffer layer, a first device layer formed over the second buffer layer. Further, the method may include forming a p-type semiconductor device over the Si substrate from the InGaAs-based stack and forming an isolation between the n-type semiconductor device and the p-type semiconductor device. Other embodiments are described and claimed.
摘要翻译： 在一个实施例中，本发明包括一种用于形成逻辑器件的方法，包括在硅（Si）衬底上形成n型半导体器件，该衬底包括基于砷化铟镓（InGaAs）的堆叠，其包括第一缓冲层， 形成在第一缓冲层上的第二缓冲层，形成在第二缓冲层上的第一器件层。 此外，该方法可以包括从基于InGaAs的叠层在Si衬底上形成p型半导体器件，并且在n型半导体器件和p型半导体器件之间形成隔离。 描述和要求保护其他实施例。
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公开(公告)号：US20060223243A1
公开(公告)日：2006-10-05
申请号：US11095829
申请日：2005-03-30
申请人： Marko Radosavljevic , Justin Brask , Suman Datta , Amlan Majumdar , Robert Chau
发明人： Marko Radosavljevic , Justin Brask , Suman Datta , Amlan Majumdar , Robert Chau
CPC分类号： H01L51/105 , B82Y10/00 , H01L51/0048 , H01L51/0052 , H01L51/0512
摘要： A metal to Carbon nanotube contact region is described that comprises a chemical bond between the metal and the Carbon nanotube.
摘要翻译： 描述了金属与碳纳米管接触区域，其包括金属和碳纳米管之间的化学键。
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公开(公告)号：US07638169B2
公开(公告)日：2009-12-29
申请号：US11391920
申请日：2006-03-28
IPC分类号： C23C16/00
CPC分类号： B82Y40/00 , B82Y30/00 , C01B32/162
摘要： Embodiments of the invention include apparatuses and methods relating to directed carbon nanotube growth using a patterned layer. In some embodiments, the patterned layer includes an inhibitor material that directs the growth of carbon nanotubes.
摘要翻译： 本发明的实施例包括与使用图案化层的定向碳纳米管生长相关的装置和方法。 在一些实施方案中，图案化层包括引导碳纳米管生长的抑制剂材料。
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