公开(公告)号：US20120179041A1

公开(公告)日：2012-07-12

申请号：US13496760

申请日：2010-11-09

申请人： Katsumi Nakagawa

发明人： Katsumi Nakagawa

IPC分类号： A61B8/14 ,  A61B6/00

CPC分类号： A61B5/0095 ,  A61B5/0073 ,  A61B5/7257 ,  A61B8/00 ,  A61B8/08 ,  G01S15/8977 ,  G01S15/8993

摘要： An image forming apparatus has acoustic transducers; and an image processing unit which calculates intensity of acoustic waves irradiated from regions inside a subject respectively by processing received signals, which are output from the acoustic transducers, by a Fourier-domain method. The image processing unit includes: a coefficient memory which stores coefficients computed in advance, the coefficient being a value determined only by a position of the acoustic transducer, position of the region and a time of receipt of the acoustic wave; a multiplier unit which multiplies the received signal of the acoustic transducer by the corresponding coefficient; and a voxel memory which accumulates multiplication results of the multiplier unit for each region.

摘要翻译： 图像形成装置具有声学换能器; 以及图像处理单元，其通过以傅立叶域方式处理从声换能器输出的接收信号，分别计算从被摄体内的区域照射的声波的强度。 图像处理单元包括：系数存储器，其存储预先计算的系数，系数是仅由声换能器的位置确定的值，区域的位置和声波的接收时间; 乘法器单元，其将所述声换能器的接收信号乘以相应的系数; 以及累积每个区域的乘法器单元的相乘结果的体素存储器。

公开(公告)号：US20060194417A1

公开(公告)日：2006-08-31

申请号：US10530189

申请日：2003-10-10

申请人： Shunichi Ishihara ,  Katsumi Nakagawa ,  Hiroshi Sato ,  Takehito Yoshino ,  Shoji Nishida ,  Noritaka Ukiyo ,  Masaaki Iwane ,  Yukiko Iwasaki ,  Masaki Mizutani

发明人： Shunichi Ishihara ,  Katsumi Nakagawa ,  Hiroshi Sato ,  Takehito Yoshino ,  Shoji Nishida ,  Noritaka Ukiyo ,  Masaaki Iwane ,  Yukiko Iwasaki ,  Masaki Mizutani

IPC分类号： H01L31/0376 ,  H01L21/20

CPC分类号： C30B29/06 ,  C30B11/00 ,  H01L31/182 ,  Y02E10/546 ,  Y02P70/521

摘要： A polycrystalline silicon substrate for a solar cell formed by growing a high purity polycrystalline silicon layer on a surface of a base obtained by slicing a polycrystalline silicon ingot obtained by melting metallurgical grade silicon and performing one-direction solidification, wherein one-direction solidification is performed on a melt prepared by adding B to molten metallurgical grade silicon at an amount of 2×1018 cm−3 to 5×1019 cm−3 based on the concentration in the melt to produce the polycrystalline silicon ingot. With this structure, it is possible to easily obtain a polycrystalline silicon substrate having resistivity and the type of conductivity suitable for manufacture of a solar cell.

摘要翻译： 一种用于太阳能电池的多晶硅衬底，其通过在通过熔化冶金级硅获得的多晶硅锭切片并进行单向凝固而获得的基底表面上生长高纯度多晶硅层而形成，其中执行单向凝固 在通过以2×10 18 cm -3至5×10 19 cm -3的量向熔融冶金级硅中加入B制备的熔体上， 3，根据熔体中的浓度制造多晶硅锭。 利用这种结构，可以容易地获得具有电阻率的多晶硅基板和适合制造太阳能电池的导电类型。

公开(公告)号：US07022181B2

公开(公告)日：2006-04-04

申请号：US10014418

申请日：2001-12-14

申请人： Katsumi Nakagawa ,  Tetsuro Saito ,  Tatsumi Shoji ,  Takehito Yoshino ,  Shoji Nishida ,  Noritaka Ukiyo ,  Masaaki Iwane ,  Masaki Mizutani

发明人： Katsumi Nakagawa ,  Tetsuro Saito ,  Tatsumi Shoji ,  Takehito Yoshino ,  Shoji Nishida ,  Noritaka Ukiyo ,  Masaaki Iwane ,  Masaki Mizutani

IPC分类号： C30B19/00

CPC分类号： C30B19/062 ,  C30B19/00 ,  C30B29/06 ,  Y10S117/911

摘要： In a liquid phase growth process comprising immersing a substrate in a melt held in a crucible, a crystal material having been dissolved in the melt, and growing a crystal on the substrate, at least a group of substrates to be immersed in the melt held in the crucible are fitted to the supporting rack at a position set aside from the center of rotation of the crucible or supporting rack, and the crystal is grown on the surface of the substrate thus disposed. This can provide a liquid phase growth process which can attain a high growth rate, can enjoy uniform distribution of growth rate in each substrate and between the substrates even when substrates are set in a large number in one batch, and can readily keep the melt from reaction and contamination even when the system has a large size, and provide a liquid phase growth system suited for carrying out the process.

公开(公告)号：US06824609B2

公开(公告)日：2004-11-30

申请号：US10229123

申请日：2002-08-28

申请人： Tetsuro Saito ,  Katsumi Nakagawa ,  Tatsumi Shoji ,  Takehito Yoshino ,  Shoji Nishida ,  Masaki Mizutani

发明人： Tetsuro Saito ,  Katsumi Nakagawa ,  Tatsumi Shoji ,  Takehito Yoshino ,  Shoji Nishida ,  Masaki Mizutani

IPC分类号： C30B1900

CPC分类号： C30B19/064 ,  C30B19/02 ,  C30B19/06 ,  C30B29/06 ,  Y10S117/90 ,  Y10T117/1016 ,  Y10T117/1024

摘要： A liquid phase growth method is provided which comprises dipping a seed substrate in a solution in a vessel having a crystal raw material melted therein and growing a crystal on the substrate, wherein a fin is provided on a bottom of the vessel, for regulating a flow of the solution from a central portion outside in a radial direction in the vessel; a flow-regulating plate is provided in the vicinity of an inner sidewall of the vessel, for regulating a flow of the solution from the bottom upwardly; and the vessel is rotated while regulating a flow of the solution by an action of the fin and the flow-regulating plate to bring the solution into contact with the seed substrate. Thus, there is provided a liquid phase growth method and apparatus capable of providing a high growth rate and showing little difference in the growth rate among the substrates or within the same substrate even when a number of substrates are charged in one batch.

摘要翻译： 提供一种液相生长方法，其包括将种子基底浸入溶液中，其中晶体原料熔化在其中并在基底上生长晶体，其中在容器的底部设置有用于调节流动的翅片 从容器中沿径向外侧的中心部分的溶液; 流量调节板设置在容器的内侧壁附近，用于调节溶液从底部向上的流动; 并且通过翅片和流动调节板的作用调节溶液的流动以使溶液与种子基底接触来旋转容器。 因此，提供了一种液相生长方法和装置，其能够提供高生长速率，并且即使在一批中填充多个基板时，基板之间或同一基板内的生长速度几乎没有差异。

公开(公告)号：US06756289B1

公开(公告)日：2004-06-29

申请号：US09638398

申请日：2000-08-15

申请人： Katsumi Nakagawa ,  Takao Yonehara ,  Shoji Nishida ,  Kiyofumi Sakaguchi

发明人： Katsumi Nakagawa ,  Takao Yonehara ,  Shoji Nishida ,  Kiyofumi Sakaguchi

IPC分类号： H01L2146

CPC分类号： H01L21/02032 ,  C30B19/12 ,  H01L21/02381 ,  H01L21/02513 ,  H01L21/02532 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/0262 ,  H01L21/02625 ,  H01L21/02628 ,  H01L21/2007 ,  H01L21/3063 ,  H01L21/76251 ,  H01L29/66772 ,  H01L29/78654 ,  H01L31/068 ,  H01L31/0687 ,  H01L31/1804 ,  H01L33/0062 ,  Y02E10/544 ,  Y02E10/547 ,  Y02P70/521 ,  Y10S438/977

摘要： To accomplish both of higher performance of a crystal and lower cost in a semiconductor member, and to produce a solar cell having a high efficiency and a flexible shape at low cost, the semiconductor member is produced by the following steps, (a) forming a porous layer in the surface region of a substrate, (b) immersing the porous layer into a melting solution in which elements for forming a semiconductor layer to be grown is dissolved, under a reducing atmosphere at a high temperature, to grow a crystal semiconductor layer on the surface of the porous layer, (c) bonding another substrate onto the surface of the substrate on which the porous layer and the semiconductor layer are formed and (d) separating the substrate from the another substrate at the porous layer.

摘要翻译： 为了在半导体部件中实现更高的晶体性能和更低的成本，并且以低成本制造具有高效率和柔性形状的太阳能电池，通过以下步骤制造半导体部件，（a）形成 （b）在还原性气氛下在高温下将多孔层浸入其中溶解要生长的半导体层形成元素的熔融溶液中，以生长晶体半导体层 在多孔层的表面上，（c）将另一个衬底粘合到其上形成有多孔层和半导体层的衬底的表面上，以及（d）在多孔层处将衬底与另一衬底分离。

公开(公告)号：US06500731B1

公开(公告)日：2002-12-31

申请号：US09662604

申请日：2000-09-14

申请人： Katsumi Nakagawa ,  Shoji Nishida

发明人： Katsumi Nakagawa ,  Shoji Nishida

IPC分类号： H01L2146

CPC分类号： H01L21/6835 ,  H01L21/76259 ,  H01L21/76838 ,  H01L31/022433 ,  H01L31/0475 ,  H01L31/048 ,  H01L31/1804 ,  H01L31/1896 ,  H01L2221/68359 ,  H01L2924/3025 ,  Y02E10/547 ,  Y02P70/521

摘要： A process for producing a semiconductor device module comprises the steps of forming a first substrate having a separation layer having thereon a plurality of independent semiconductor layers and semiconductor devices individually formed on the plurality of semiconductor layers, electrically connecting the semiconductor devices one another on the first substrate, and separating the plurality of semiconductor layers from the first substrate at the separation layer to transfer the semiconductor layers to a second substrate.

摘要翻译： 一种制造半导体器件模块的方法包括以下步骤：形成具有分离层的第一衬底，其上具有多个独立的半导体层和分别形成在所述多个半导体层上的半导体器件，所述半导体器件分别形成在所述多个半导体层上， 衬底，并且在分离层处将多个半导体层与第一衬底分离，以将半导体层转移到第二衬底。

公开(公告)号：US06452091B1

公开(公告)日：2002-09-17

申请号：US09614548

申请日：2000-07-12

申请人： Katsumi Nakagawa ,  Takao Yonehara ,  Yasuyoshi Takai ,  Kiyofumi Sakaguchi ,  Noritaka Ukiyo ,  Masaaki Iwane ,  Yukiko Iwasaki

发明人： Katsumi Nakagawa ,  Takao Yonehara ,  Yasuyoshi Takai ,  Kiyofumi Sakaguchi ,  Noritaka Ukiyo ,  Masaaki Iwane ,  Yukiko Iwasaki

IPC分类号： H01L2102

CPC分类号： H01L21/76259 ,  H01L21/304 ,  Y10T156/1002 ,  Y10T156/1028 ,  Y10T156/1041 ,  Y10T156/1048 ,  Y10T156/1049

摘要： The peeling of a thin-film single-crystal from a substrate is carried out so that the directions of straight lines on the single-crystal surface made by planes on which the single-crystal is apt to cleave are different from the front line direction of the peeled single-crystal. This single-crystal is used in a solar cell and a drive circuit member of an image display element. A method is provided which prevents a decrease in quality and yield of a single crystal layer when it is peeled from a substrate. A flexible solar cell module having a thin film single-crystal layer is made so that its flexing direction is different from the single-crystal's cleaving direction. Thus, a thin-film single-crystal solar cell module having excellent durability and reliability due to a lack of defect or cracking during production and use, and a method for producing the same, is provided.

摘要翻译： 进行从基板剥离薄膜单晶，使得由单晶易于劈开的平面制成的单晶面上的直线的方向不同于 剥离的单晶。 该单晶体用于太阳能电池和图像显示元件的驱动电路部件。 提供了当从基板剥离时防止单晶层的质量和产量降低的方法。 制成具有薄膜单晶层的柔性太阳能电池模块，使其挠曲方向与单晶的分裂方向不同。 因此，提供了由于在生产和使用期间缺少缺陷或破裂而具有优异的耐久性和可靠性的薄膜单晶太阳能电池组件及其制造方法。

公开(公告)号：US06391108B2

公开(公告)日：2002-05-21

申请号：US09208377

申请日：1998-12-10

申请人： Shoji Nishida ,  Katsumi Nakagawa ,  Noritaka Ukiyo ,  Masaaki Iwane

发明人： Shoji Nishida ,  Katsumi Nakagawa ,  Noritaka Ukiyo ,  Masaaki Iwane

IPC分类号： C30B1900

CPC分类号： C30B19/06 ,  C30B19/02 ,  C30B29/06

摘要： Provided are a liquid phase growth method of silicon crystal comprising a step of injecting a source gas containing at least silicon atoms into a solvent to decompose the source gas and, simultaneously therewith, dissolving the silicon atoms into the solvent, thereby supplying the silicon atoms into the solvent, and a step of dipping or contacting a substrate into or with the solvent, thereby growing a silicon crystal on the substrate; and a method of producing a solar cell utilizing the aforementioned method. Also provided is a liquid phase growth apparatus of a silicon crystal comprising means for holding a solvent in which silicon atoms are dissolved, and means for dipping or contacting a substrate into or with the solvent, the apparatus further comprising means for injecting a source gas containing at least silicon atoms into the solvent. These provide a liquid phase growth method of a silicon crystal and a production method of a solar cell each having high volume productivity and permitting continuous growth.

摘要翻译： 提供了一种硅晶体的液相生长方法，其包括将至少含有硅原子的源气体注入溶剂中以分解源气体，同时将硅原子溶解到溶剂中，从而将硅原子供给到 溶剂，以及将基材浸渍或接触溶剂或与溶剂接触的步骤，从而在基材上生长硅晶体; 以及利用上述方法制造太阳能电池的方法。 还提供了一种硅晶体的液相生长装置，其包括用于保持其中硅原子溶解的溶剂的装置，以及用于将基底浸入或接触溶剂或与溶剂接触的装置，该装置还包括用于注入含有 至少硅原子进入溶剂。 这些提供硅晶体的液相生长方法和各自具有高体积生产率并允许连续生长的太阳能电池的制造方法。

公开(公告)号：US06258702B1

公开(公告)日：2001-07-10

申请号：US09190100

申请日：1998-11-12

申请人： Katsumi Nakagawa ,  Kozo Arao ,  Yukiko Iwasaki

发明人： Katsumi Nakagawa ,  Kozo Arao ,  Yukiko Iwasaki

IPC分类号： H01L2128

CPC分类号： H01L21/02565 ,  H01L21/02425 ,  H01L21/02628 ,  H01L21/02639 ,  H01L21/16 ,  H01L29/872 ,  H01L31/022425 ,  Y02E10/50

摘要： A film-forming method for forming a cuprous oxide film includes the steps of immersing a substrate having at least an electrically conductive surface in a solution containing copper ion and nitrate ion which are coexistent therein, and causing deposition of the cuprous oxide film on the electrically conductive surface of the substrate by way of cathodic reaction. A process for producing a semiconductor device such as a solar cell or a rectifier also is provided using the film-forming method.

摘要翻译： 用于形成氧化亚铜膜的成膜方法包括以下步骤：将至少具有导电表面的基材浸入含有共存于其中的铜离子和硝酸根离子的溶液中，并使氧化亚铜膜沉积在电 通过阴极反应形成衬底的导电表面。 使用成膜方法也可以提供太阳能电池或整流器等半导体装置的制造方法。

公开(公告)号：US06211038B1

公开(公告)日：2001-04-03

申请号：US09047325

申请日：1998-03-25

申请人： Katsumi Nakagawa ,  Takao Yonehara ,  Shoji Nishida ,  Kiyofumi Sakaguchi ,  Yukiko Iwasaki

发明人： Katsumi Nakagawa ,  Takao Yonehara ,  Shoji Nishida ,  Kiyofumi Sakaguchi ,  Yukiko Iwasaki

IPC分类号： H01L2176

CPC分类号： H01L21/76259

摘要： A method for manufacturing a thin-film crystalline solar cell includes the steps of (i) forming a porous layer including a large number of fine pores in a surface portion of a crystalline substrate, (ii) transforming a part of the porous layer including the surface thereof into a smooth layer which does not include fine pores by providing the porous layer with excitation energy, and (iii) peeling the smooth layer from the substrate. The excitation energy is provided, for example, by performing heat treatment in a hydrogen atmosphere, irradiating with light having a wavelength equal to or less than 600 nm, or irradiating with an electron beam. It is thereby possible to form a thin-film crystalline semiconductor layer on an inexpensive and flexible substrate by simple processes.

摘要翻译： 制造薄膜结晶太阳能电池的方法包括以下步骤：（i）在结晶基材的表面部分形成包含大量细孔的多孔层，（ii）将包含 通过向多孔层提供激发能量而将其表面形成不包括细孔的光滑层，以及（iii）从基板剥离光滑层。 励磁能量例如通过在氢气氛中进行热处理，用波长等于或小于600nm的光照射或用电子束照射来提供。 从而可以通过简单的工艺在便宜且柔性的基板上形成薄膜晶体半导体层。