公开(公告)号：US06221756B1

公开(公告)日：2001-04-24

申请号：US09262619

申请日：1999-03-04

申请人： Masaki Hara

发明人： Masaki Hara

IPC分类号： H01L214763

CPC分类号： H01L21/31612 ,  H01L21/02164 ,  H01L21/022 ,  H01L21/02211 ,  H01L21/02271 ,  H01L21/02274 ,  H01L21/02304 ,  H01L21/0234 ,  H01L21/02343 ,  H01L21/02359 ,  H01L21/31051 ,  H01L21/76801 ,  H01L21/76819 ,  H01L21/76826 ,  H01L21/76832 ,  H01L21/76834

摘要： A method of forming an interlayer film on a substrate with a plurality of patterns formed thereon wherein the interlayer film is deposited on the substrate by a process comprising a plurality of steps in each of which a portion of the film is deposited so as to have different fluidity with the same source material. In the first aspect of the method, a portion of the interlayer film is at first deposited so as to have relatively reduced fluidity, so that the film is formed with an almost uniform thickness regardless of any pattern width on the substrate. After this, the rest portion of the film is deposited so that it has relatively increased fluidity so as to fill up the trough between the patterns. In the second aspect of the method, an undercoating film is formed in advance which is then treated to be hydrophobic so that a portion of the interlayer film deposited thereon reduces its fluidity, by which the portion is uniformly deposited regardless of any pattern width. Then, the rest portion of the film is deposited over the above portion of the film with relatively increased fluidity.

摘要翻译： 一种在其上形成有多个图案的基板上形成中间膜的方法，其中通过包括多个步骤的方法将所述中间膜沉积在所述基板上，所述多个步骤中的所述层的一部分被沉积以具有不同的 在该方法的第一方面中，首先沉积一部分层间膜以具有相对降低的流动性，使得膜形成为几乎均匀的厚度，而不管任何图案宽度如何 底物。 之后，沉积薄膜的其余部分，使其具有相对增加的流动性，以填充图案之间的槽。在该方法的第二方面，预先形成底涂膜，然后将其处理为 疏水性使得沉积在其上的层间膜的一部分减小其流动性，通过该流动性部分均匀地沉积，而不管任何图案宽度。 然后，膜的其余部分以相对增加的流动性沉积在膜的上述部分上。

公开(公告)号：US6075536A

公开(公告)日：2000-06-13

申请号：US138574

申请日：1998-08-24

申请人： Kazuo Kunieda ,  Masaki Hara

发明人： Kazuo Kunieda ,  Masaki Hara

IPC分类号： G06F3/14 ,  G06F3/033 ,  G06F3/048 ,  G06F12/00 ,  G06F17/30 ,  G06T15/10 ,  G06F3/00 ,  G06T17/00

CPC分类号： G06F3/04815 ,  G06T15/10

摘要： To provide an information visualizing system for presenting information of items to a user flexibly and automatically according to user's manipulation to control a virtual space, the information visualizing includes a target object indicator (22) for designating certain of visual object displayed in the virtual space as target objects whereof positional relation to a target indication object displayed in the virtual space satisfies a certain condition; a related-information generator (23 and 24) for generating related-information to be displayed in connection to the target objects according to relational condition designated by the user by processing information concerning the target objects; a target object revisor (26) for controlling the target object indicator to update the target objects automatically at appropriate intervals according to the situation of the virtual space; and a related-information (27) revisor for controlling the related-information generator (23 and 24) to update the related-information automatically at appropriate intervals according to the situation of the virtual space.

摘要翻译： 为了提供信息可视化系统，用于根据用户的操纵灵活自动地向用户呈现项目的信息以控制虚拟空间，所述信息可视化包括目标对象指示符（22），用于指定虚拟空间中显示的某些可视对象为 与虚拟空间中显示的目标指示对象的位置关系的目标对象满足一定条件; 相关信息生成器（23和24），用于根据用户通过处理与目标对象有关的信息指定的关系条件来生成与目标对象相关联地显示的相关信息; 用于根据所述虚拟空间的情况以适当的间隔自动地更新所述目标对象的目标对象指示器（26）; 以及相关信息（27），用于控制相关信息生成器（23和24），以根据虚拟空间的情况以适当的间隔自动更新相关信息。

公开(公告)号：US5889292A

公开(公告)日：1999-03-30

申请号：US571728

申请日：1995-12-13

申请人： Toshiyuki Sameshima ,  Masaki Hara ,  Naoki Sano ,  Dharam Pal Gosain ,  Setsuo Usui

发明人： Toshiyuki Sameshima ,  Masaki Hara ,  Naoki Sano ,  Dharam Pal Gosain ,  Setsuo Usui

IPC分类号： H01L29/78 ,  H01L21/20 ,  H01L21/268 ,  H01L21/336 ,  H01L29/786 ,  H01L29/04 ,  H01L27/108 ,  H01L29/76 ,  H01L31/0328

CPC分类号： H01L29/78684 ,  H01L29/66742

摘要： The present invention is directed to a thin film transistor (TFT) structure having a channel region formed of a crystallized SiGe and is to provide a thin film transistor having a large carrier mobility. In this case, a channel region (4) is formed of a crystallized SiGe thin film.

摘要翻译： 本发明涉及具有由结晶化SiGe形成的沟道区的薄膜晶体管（TFT）结构，并提供具有大载流子迁移率的薄膜晶体管。 在这种情况下，沟道区（4）由结晶的SiGe薄膜形成。

公开(公告)号：US5648276A

公开(公告)日：1997-07-15

申请号：US250679

申请日：1994-05-26

申请人： Masaki Hara ,  Naoki Sano ,  Toshiyuki Sameshima ,  Atsushi Kohno ,  Mitsunobu Sekiya ,  Yasuhiro Kanaya ,  Michihisa Yano

发明人： Masaki Hara ,  Naoki Sano ,  Toshiyuki Sameshima ,  Atsushi Kohno ,  Mitsunobu Sekiya ,  Yasuhiro Kanaya ,  Michihisa Yano

IPC分类号： H01L21/205 ,  H01L21/20 ,  H01L21/324 ,  H01L21/336 ,  H01L29/78 ,  H01L29/786

CPC分类号： H01L21/67207 ,  H01L29/4908 ,  H01L29/66757 ,  H01L29/78618 ,  H01L29/78675 ,  H01L29/78696

摘要： A method and an apparatus for fabricating a thin film semiconductor device are disclosed. An a-Si:H thin film produced on a wafer is melting-recrystallized by irradiating a laser beam to it in a laser annealing chamber to produce a polycrystalline Si thin film. The wafer is then transported to a CVD chamber without exposing it to the outside air. A gate insulating film is produced on a clean surface of the polycrystalline Si thin film in the CVD chamber. In another case, an a-Si:H thin film is melting-recrystallized in the laser annealing chamber to produce a polycrystalline Si thin film and then the wafer is transported to a hydrogenating chamber without exposing it to the outside air. Thereafter the polycrystalline Si thin film is plasma hydrogenated in the hydrogenating chamber. The method and apparatus can fabricate thin film semiconductor devices having a high performance and a high reliability with a good uniformity by making a clean and high quality semiconductor/insulator interface or by hydrogenating a semiconductor thin film without changes in electrical conductivity.

摘要翻译： 公开了一种用于制造薄膜半导体器件的方法和装置。 在晶片上制造的a-Si：H薄膜通过在激光退火室中照射激光束而产生多晶Si薄膜而进行熔融再结晶。 然后将晶片输送到CVD室，而不将其暴露于外部空气。 在CVD室中的多晶Si薄膜的清洁表面上产生栅极绝缘膜。 在另一种情况下，a-Si：H薄膜在激光退火室中熔融再结晶以产生多晶Si薄膜，然后将晶片输送到氢化室，而不暴露于外部空气。 此后，多晶Si薄膜在氢化室中被等离子体氢化。 该方法和装置可以通过制造清洁且高质量的半导体/绝缘体界面或通过不导电导电性的变化来氢化半导体薄膜来制造具有高性能和高可靠性的薄膜半导体器件。

公开(公告)号：US5001744A

公开(公告)日：1991-03-19

申请号：US277568

申请日：1988-11-29

申请人： Tsutomu Nishino ,  Osamu Hirata ,  Shoji Suzuki ,  Masaki Hara ,  Shinji Tsuchida ,  Minoru Ogata

发明人： Tsutomu Nishino ,  Osamu Hirata ,  Shoji Suzuki ,  Masaki Hara ,  Shinji Tsuchida ,  Minoru Ogata

IPC分类号： H04M11/06 ,  H04M11/00

CPC分类号： H04M11/06 ,  Y10S379/902

摘要： Disclosed is a communication system which accommodates at least one central office network line and a plurality of extensions, and which is adapted to control line connection between the central office network line and the plurality of extensions. When a call from the central office network line is detected, it is determined in response to the call whether a control signal characteristic of data communication, such as a CST signal, is being sent by the other party's device. If such a control signal is being sent, a line to which a data processor is connected is selected and connected to the calling line. This makes it possible to connect an information processor and a telephone to a common central office network line, and to connect a call answered by another telephone to a desired information processor rapidly through a simple operation. Accordingly, it is unnecessary to assign a special-purpose central office network line to an information processor. When the information processor is not in use, therefore, another telephone may employ the same line. This improves the efficiency of line utilization.

摘要翻译： 公开了一种通信系统，其容纳至少一个中心局网络线路和多个分机，并且其适于控制中心局网络线路与多个分机之间的线路连接。 当检测到来自中心局网络线路的呼叫时，响应于该呼叫确定对方的设备是否正在发送诸如CST信号的数据通信的控制信号特性。 如果正在发送这样的控制信号，则选择连接数据处理器的线并将其连接到呼叫线路。 这使得可以将信息处理器和电话连接到公共中心局网络线路，并且通过简单的操作将由另一个电话应答的呼叫快速连接到期望的信息处理器。 因此，不需要将专用中心局网线分配给信息处理器。 因此，当信息处理器不使用时，另一个电话机可以使用相同的线路。 这提高了线路利用效率。

公开(公告)号：USD310517S

公开(公告)日：1990-09-11

申请号：US98956

申请日：1987-09-18

申请人： Masaki Hara ,  Masayuki Sakai ,  Masaharu Sawatani ,  Midori Yonezawa ,  Katsuo Fukuyama

设计人： Masaki Hara ,  Masayuki Sakai ,  Masaharu Sawatani ,  Midori Yonezawa ,  Katsuo Fukuyama

公开(公告)号：USD307265S

公开(公告)日：1990-04-17

申请号：US52665

申请日：1987-05-21

申请人： Masaki Hara ,  Masayuki Sakai ,  Naoto Katoh

设计人： Masaki Hara ,  Masayuki Sakai ,  Naoto Katoh

公开(公告)号：US06433390B1

公开(公告)日：2002-08-13

申请号：US09625475

申请日：2000-07-25

申请人： Masaki Hara

发明人： Masaki Hara

IPC分类号： H01L2701

CPC分类号： B81C3/001 ,  H01L21/2007 ,  H01L21/50 ,  H01L2224/05568 ,  H01L2224/05573 ,  H01L2224/05647 ,  H01L2224/16225 ,  H01L2224/81 ,  H01L2924/00014

摘要： In fabricating bonded substrate structures having a device-housing space therein, microstructures in the bonded substrates are prevented from being broken or damaged, and the yield of the bonded substrate structures fabricated is increased. A through-groove capable of connecting the device-housing space to the outside is formed in the bonded surface of one substrate. Thus configured, the atmosphere inside the device-housing space is kept the same as the outside atmosphere while openings that reach the device-housing space are formed through the bonded substrate structure by etching the structure, and the device-housing space is prevented from being subjected to any rapid pressure change in the process of forming the openings. The depth of the through-groove may be the same as that of the recess for the device-housing space. Thus configured, the through-groove may be formed in one and the same etching treatment for forming the device-housing space. The through-groove may be partly sealed with a Pb bump or the like, and the atmosphere inside the device-housing space can be insulated from the outside atmosphere in any stage of processing the bonded substrate structure.

摘要翻译： 在制造其中具有器件容纳空间的键合衬底结构中，防止粘合衬底中的微结构被破坏或损坏，并且所制造的键合衬底结构的产量增加。 在一个基板的接合表面上形成能够将装置容纳空间连接到外部的通槽。 如此构成，通过蚀刻该结构，通过键合衬底结构形成到达器件容纳空间的开口，使得器件容纳空间内的气氛保持与外部气氛相同，并且防止器件容纳空间 在形成开口的过程中经受任何快速的压力变化。 通孔的深度可以与用于装置容纳空间的凹部的深度相同。 如此构成，可以在用于形成器件容纳空间的同一蚀刻处理中形成贯通槽。 贯通槽可以用Pb凸块等部分地密封，并且在处理结合的衬底结构的任何阶段中，器件容纳空间内的气氛可以与外部气氛绝缘。

公开(公告)号：US06353528B1

公开(公告)日：2002-03-05

申请号：US09083343

申请日：1998-05-22

申请人： Yuuichi Hori ,  Shinya Matsuno ,  Naotomo Hokajou ,  Masaki Hara

发明人： Yuuichi Hori ,  Shinya Matsuno ,  Naotomo Hokajou ,  Masaki Hara

IPC分类号： D01F912

CPC分类号： H01G11/72 ,  C01B32/382 ,  H01G11/32 ,  Y02E60/13

摘要： Disclosed is a solid activated carbon and a process for manufacturing the solid activated carbon which is particularly suitable for electrode materials used in an electric double layer capacitor and various batteries. The use of the solid activated carbon makes it possible to prepare an activated carbon substrate having high mechanical strength and practical capacitance while the content of activated carbon is high. The solid activated carbon comprises an activated carbon powder and/or an activated carbon fiber, a carburized substance of a PVA or a resin derived from PVA, and a PVA or a resin derived from PVA. The process for manufacturing the solid activated carbon comprises, molding a molding material consisting of an activated carbon powder and/or an activated carbon fiber, a PVA or a resin derived from PVA or a mixture of a PVA or a resin derived from PVA and a mesophase using a known molding method, aging the molded compact in air and heat-treating the aged compact in a non-oxidizing atmosphere.

摘要翻译： 公开了固体活性炭和固体活性炭的制造方法，其特别适用于双电层电容器和各种电池中使用的电极材料。 使用固体活性炭可以制备具有高机械强度和实用电容的活性炭基材，同时活性炭的含量高。 固体活性炭包括活性炭粉末和/或活性炭纤维，PVA或由PVA衍生的树脂的渗碳物质，PVA或衍生自PVA的树脂。 制造固体活性炭的方法包括：将由活性炭粉末和/或活性碳纤维，PVA或衍生自PVA的树脂或PVA或衍生自PVA的树脂的混合物和/ 使用已知的成型方法的中间相，在空气中老化成型体，在非氧化性气氛中对老化的成形体进行热处理。

公开(公告)号：US5910015A

公开(公告)日：1999-06-08

申请号：US25616

申请日：1998-02-18

申请人： Toshiyuki Sameshima ,  Masaki Hara ,  Naoki Sano ,  Dharam Pal Gosain ,  Setsuo Usui

发明人： Toshiyuki Sameshima ,  Masaki Hara ,  Naoki Sano ,  Dharam Pal Gosain ,  Setsuo Usui

IPC分类号： H01L29/78 ,  H01L21/20 ,  H01L21/268 ,  H01L21/336 ,  H01L29/786 ,  H01L21/84

CPC分类号： H01L29/78684 ,  H01L29/66742

摘要： The present invention is directed to a thin film transistor (TFT) structure having a channel region formed of a crystallized SiGe and is to provide a thin film transistor having a large carrier mobility. In this case, a channel region (4) is formed of a crystallized SiGe thin film.

摘要翻译： 本发明涉及具有由结晶化SiGe形成的沟道区的薄膜晶体管（TFT）结构，并提供具有大载流子迁移率的薄膜晶体管。 在这种情况下，沟道区（4）由结晶的SiGe薄膜形成。