公开(公告)号：US20070182941A1

公开(公告)日：2007-08-09

申请号：US11653279

申请日：2007-01-16

申请人： Yukiyasu Arisawa ,  Shoji Mimotogi ,  Shigeru Hasebe

发明人： Yukiyasu Arisawa ,  Shoji Mimotogi ,  Shigeru Hasebe

IPC分类号： G03B27/68

CPC分类号： G03F1/84 ,  G03F7/705 ,  G03F7/70525

摘要： A projection exposure mask acceptance decision system includes assurance object measuring unit to measure quality assurance objects relating to projection exposure mask, first exposure characteristic deterioration quantity calculating unit to calculate first exposure characteristic deterioration quantity caused by deviations in average values of the quality assurance objects measured by the measuring unit, second exposure characteristic deterioration quantity calculating unit to calculate second exposure characteristic deterioration quantity caused by dispersion in the quality assurance objects measured by the measuring unit, sum calculating unit to calculate simple sum of the first and second quantity, root sum square calculating unit to calculate root sum square of the first and second quantity, entire exposure characteristic deterioration quantity calculating unit to calculate entire exposure characteristic deterioration quantity as an interior division value of the simple sum and root sum square, and judgment unit to judge whether the entire exposure characteristic deterioration quantity is acceptable value.

摘要翻译： 投影曝光掩模验收判定系统包括：保证对象测量单元，用于测量与投影曝光掩模相关的质量保证对象;第一曝光特性劣化量计算单元，用于计算由质量保证对象的平均值偏差引起的第一曝光特性劣化量， 测量单元，第二曝光特性劣化量计算单元，用于计算由测量单元测量的质量保证对象中由色散引起的第二曝光特性劣化量;和计算单元，计算第一和第二数量的简单和， 计算第一和第二数量的总和平均值的单位，全部曝光特性劣化量计算单元，计算作为简单和的r的内部分割值的整体曝光特性劣化量 总和平方和判断单元判断整个曝光特性劣化量是否为可接受值。

公开(公告)号：US20060001846A1

公开(公告)日：2006-01-05

申请号：US11170165

申请日：2005-06-30

申请人： Takuya Kono ,  Tatsuhiko Higashiki ,  Takashi Sato ,  Shoji Mimotogi ,  Soichi Inoue

发明人： Takuya Kono ,  Tatsuhiko Higashiki ,  Takashi Sato ,  Shoji Mimotogi ,  Soichi Inoue

IPC分类号： G03B27/00

CPC分类号： G03F7/70625

摘要： An exposure system includes a simulator speculating first and second calculated doses to project first and second reference marks onto first and second resist films, respectively, an exposure tool projecting the first reference mark onto the first resist film at test doses to form test resist patterns, a choose module choosing an optimum pattern among the test resist patterns and choosing a first optimum dose used for the optimum pattern, and a dose calculator calculating a second optimum dose for the second reference mark by correcting the first optimum dose based on the first and the second calculated doses.

摘要翻译： 曝光系统包括模拟器，分别将第一和第二参考标记分别投影到第一和第二抗蚀剂膜上的第一和第二计算剂量，曝光工具以测试剂量将第一参考标记投影到第一抗蚀剂膜上以形成测试抗蚀图案， 选择模块，在测试抗蚀剂图案中选择最佳图案，并选择用于最佳图案的第一最佳剂量;以及剂量计算器，通过基于第一和第二图像校正第一最佳剂量来计算第二参考标记的第二最佳剂量 秒计算剂量。

公开(公告)号：US06967719B2

公开(公告)日：2005-11-22

申请号：US10287522

申请日：2002-11-05

申请人： Takashi Sato ,  Shoji Mimotogi ,  Takahiro Ikeda ,  Soichi Inoue

发明人： Takashi Sato ,  Shoji Mimotogi ,  Takahiro Ikeda ,  Soichi Inoue

IPC分类号： G03F1/44 ,  G03F7/20 ,  G03F7/207 ,  H01L21/027 ,  G01B11/00 ,  G01B9/00 ,  G03F9/00

CPC分类号： G03F7/70516

摘要： There is here disclosed a method for inspecting an exposure apparatus, comprising illuminating a mask, in which a mask-pattern including at least a set of a first mask-pattern and a second mask-pattern mutually different in shape is formed, from a direction in which a point located off an optical axis of an exposure apparatus is a center of illumination, and exposing and projecting an image of the mask-pattern toward an image-receiving element, and measuring a mutual relative distance between images of the first and second mask-patterns exposed and projected on the image-receiving element, thereby inspecting a state of an optical system of the exposure apparatus.

摘要翻译： 这里公开了一种用于检查曝光装置的方法，包括：照射掩模，其中形成至少包括一组第一掩模图案和形成相互不同形状的第二掩模图案的掩模图案， 其中位于曝光装置的光轴外的点是照明中心，并且将图案的图像曝光并投影到图像接收元件，并且测量第一和第二图像的图像之间的相对相对距离 掩模图案曝光并投影在图像接收元件上，从而检查曝光装置的光学系统的状态。

公开(公告)号：US20050153540A1

公开(公告)日：2005-07-14

申请号：US10969996

申请日：2004-10-22

申请人： Shoji Mimotogi ,  Hiroko Nakamura ,  Kazuya Fukuhara ,  Satoshi Tanaka ,  Soichi Inoue

发明人： Shoji Mimotogi ,  Hiroko Nakamura ,  Kazuya Fukuhara ,  Satoshi Tanaka ,  Soichi Inoue

IPC分类号： G03F7/26 ,  G03F7/20 ,  H01L21/027 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/461 ,  H01L21/4763 ,  H01L21/768

CPC分类号： G03F7/70425 ,  G03F7/70466 ,  H01L21/76816

摘要： A method of forming a contact hole on a substrate by using a projection aligner comprising a lighting system including a light source, an aperture, and a condenser lens, a photo mask on which light from the lighting system is incident, and a projection lens for projecting the light from the photo mask onto the substrate, comprises forming a first photosensitive resist film on the substrate; exposing the first photosensitive resist film by using a photo mask in which mask patterns are cyclically arranged in a first direction and a second direction which is orthogonal to the first direction and a first aperture having light transmission parts arranged symmetrically with respect to a center point in the first direction; developing the exposed first photosensitive resist film to form first lines and linear spaces; forming a second photosensitive resist film on the substrate; exposing the second photosensitive resist film by using the photo mask and a second aperture having light transmission parts arranged symmetrically with respect to a center point in the second direction; and developing the second photosensitive resist film to form second lines and linear spaces which are orthogonal to the first lines and linear spaces.

摘要翻译： 一种通过使用包括光源，孔径和聚光透镜的照明系统的投影对准器在基板上形成接触孔的方法，来自照明系统的光入射的光掩模和用于 将来自光掩模的光投射到基板上，包括在基板上形成第一光敏抗蚀剂膜; 通过使用掩模图案沿与第一方向正交的第一方向和第二方向循环布置的光掩模曝光第一光敏抗蚀剂膜，以及具有相对于中心点对称布置的光传输部分的第一孔 第一个方向 显影第一光敏抗蚀剂膜以形成第一线和线性空间; 在所述基板上形成第二光敏抗蚀剂膜; 通过使用光掩模曝光第二光敏抗蚀剂膜，并且具有相对于第二方向的中心点对称布置的透光部分的第二孔; 并显影第二光敏抗蚀剂膜以形成与第一线和线性空间正交的第二线和线性空间。

公开(公告)号：US06418553B1

公开(公告)日：2002-07-09

申请号：US09522951

申请日：2000-03-10

申请人： Akiko Yamada ,  Koji Hashimoto ,  Shoji Mimotogi

发明人： Akiko Yamada ,  Koji Hashimoto ,  Shoji Mimotogi

IPC分类号： G06F760

CPC分类号： G06F17/5068 ,  G03F1/32

摘要： There are provided a circuit designing method using a half-tone phase shift mask for forming a circuit pattern on a semiconductor substrate, and a computer-readable medium having recorded a program for causing a computer to execute the circuit designing method. The circuit designing method comprises the steps of: calculating a first lithography process tolerance, which is an index satisfying a range of a dimensional fluctuation allowed when a basic pattern representative of the circuit pattern is formed on the semiconductor substrate, and calculating a second lithography process tolerance, which is an index capable of avoiding the formation of a side lobe capable of being produced on the semiconductor substrate when the basic pattern is formed on the semiconductor substrate using the half-tone phase shift mask, respectively, using an optical simulation; calculating a common lithography process tolerance comprising an overlapping region of the first lithography process tolerance and the second lithography process tolerance; preparing an inhibiting rule for excluding a circuit pattern including the basic pattern, which is below a reference value previously set on the basis of the common lithography process tolerance, from an object to be designed; and designing a circuit using the inhibiting rule.

摘要翻译： 提供了一种使用半色调相移掩模在半导体衬底上形成电路图案的电路设计方法，以及记录有使计算机执行电路设计方法的程序的计算机可读介质。 电路设计方法包括以下步骤：计算第一光刻处理容差，其是当在半导体衬底上形成表示电路图案的基本图案时允许的尺寸波动的范围的索引，以及计算第二光刻处理 公差，其是当使用光学模拟分别使用半色调相移掩模在半导体衬底上形成基本图案时能够避免形成能够在半导体衬底上产生的旁瓣的指标; 计算公共光刻工艺公差，其包括第一光刻工艺公差和第二光刻工艺公差的重叠区域; 准备将包含基本图案的电路图案排除在低于基于普通光刻加工公差的预先设定的基准值的电路图案的禁止规则; 并使用禁止规则设计电路。

公开(公告)号：US06294297B1

公开(公告)日：2001-09-25

申请号：US09255860

申请日：1999-02-23

申请人： Shoji Mimotogi

发明人： Shoji Mimotogi

IPC分类号： G03C500

CPC分类号： G03F7/705 ,  G03F7/70558 ,  G03F7/70641

摘要： A process tolerance calculating method which, in order to obtain a process tolerance in a process for forming a pattern on an object, to be processed, with the use of a projection light exposure apparatus, calculates a process tolerance for finding a relation of a light exposure amount and focal point position corresponding to a finished pattern of an allowable dimension value, comprising the steps of: (1) measuring a variation in dimension of a to-be-formed pattern in terms of its length by varying a light exposure amount and focal point position by the projecting light exposure apparatus; (2) finding a dependence of the measured pattern dimension upon the light exposure amount, at each varying focal position through a curve approximation; (3) finding a dependence of the pattern dimension which is found through the curve approximation upon the focal point position at each varying light exposure amount; (4) finding a light exposure amount corresponding to a finished pattern of an allowable dimension value, at each focal point position, from a result obtained at the step (3); and (5) finding a dependence of the light exposure amount upon the focal point position corresponding to the pattern of an allowable dimension value from a result obtained from the step (4).

摘要翻译： 一种过程公差计算方法，为了在使用投影式曝光装置处理的待处理对象物的处理中获得处理公差，计算出用于求出光的关系的处理公差 曝光量和焦点位置对应于允许尺寸值的完成图案，包括以下步骤：（1）通过改变曝光量来测量要形成的图案的长度方面的尺寸变化，以及 通过投影曝光装置的焦点位置;（2）通过曲线近似在每个变化焦点位置处找到所测量的图案尺寸对曝光量的依赖性;（3）找到找到的图案尺寸的依赖性 通过在每个变化的曝光量的焦点位置上的曲线近似;（4）找到对应于允许的完成图案的曝光量 在每个焦点位置处从步骤（3）获得的结果的尺寸值; 和（5）根据从步骤（4）获得的结果，找到对应于允许尺寸值的图案的焦点位置的曝光量的依赖性。

公开(公告)号：US08809072B2

公开(公告)日：2014-08-19

申请号：US13051961

申请日：2011-03-18

申请人： Chikaaki Kodama ,  Toshiya Kotani ,  Shigeki Nojima ,  Shoji Mimotogi

发明人： Chikaaki Kodama ,  Toshiya Kotani ,  Shigeki Nojima ,  Shoji Mimotogi

IPC分类号： H01L21/66 ,  G01R31/26

CPC分类号： G03F1/36

摘要： According to a sub-resolution assist feature arranging method in embodiments, it is selected which of a rule base and a model base is set for which pattern region on pattern data corresponding to a main pattern as a type of the method of arranging the sub-resolution assist feature for improving resolution of the main pattern formed on a substrate. Then, the sub-resolution assist feature by the rule base is arranged in a pattern region set as the rule base and the sub-resolution assist feature by the model base is arranged in a pattern region set as the model base.

摘要翻译： 根据实施例中的子分辨率辅助特征排列方法，选择规则库和模型库中的哪一个被设置为对应于主图案的图案数据上的哪个图案区域作为安排子图形的方法的类型， 分辨率辅助功能，用于提高在基板上形成的主图案的分辨率。 然后，将规则库的子分辨率辅助特征设置在设置为规则库的图案区域中，并且由模型库将子分辨率辅助特征排列在设置为模型库的图案区域中。

公开(公告)号：US08230369B2

公开(公告)日：2012-07-24

申请号：US12395481

申请日：2009-02-27

申请人： Akiko Mimotogi ,  Satoshi Tanaka ,  Shoji Mimotogi ,  Takashi Sato

发明人： Akiko Mimotogi ,  Satoshi Tanaka ,  Shoji Mimotogi ,  Takashi Sato

IPC分类号： G06F17/50

CPC分类号： G03F7/705 ,  G03F1/36 ,  G03F1/70

摘要： A method of simulating an optical intensity distribution on a substrate when a mask pattern formed on the mask is transferred to the substrate through a projection optical system by irradiating an illumination light obliquely on a mask surface of the mask, which comprises setting a phase difference between a zero-order diffraction light and a first-order diffraction light determined according to at least one of a distance between the zero-order diffraction light and the first-order diffraction light on a pupil of the projection optical system, thickness of a light-shielding portion formed on the mask, angle defined by an optical axis direction of the illumination light and an incident direction on the mask, and a difference between a size of the mask pattern and a half cycle of the mask pattern, and carrying out a simulation of the optical intensity distribution on the substrate according to the set phase difference.

摘要翻译： 当掩模上形成的掩模图案通过投影光学系统通过将照明光倾斜地照射到掩模的掩模表面上时，模拟基板上的光强度分布的方法，该方法包括设置掩模的掩模表面之间的相位差 根据投影光学系统的光瞳上的零级衍射光与一级衍射光之间的距离中的至少一个所确定的零级衍射光和一级衍射光， 形成在掩模上的屏蔽部分，由照明光的光轴方向和掩模上的入射方向限定的角度以及掩模图案的尺寸与掩模图案的半周期之间的差异，并且进行模拟 根据设定的相位差在基板上的光强度分布。

公开(公告)号：US08154710B2

公开(公告)日：2012-04-10

申请号：US12400677

申请日：2009-03-09

申请人： Shoji Mimotogi ,  Yasuharu Sato

发明人： Shoji Mimotogi ,  Yasuharu Sato

IPC分类号： G03B27/32 ,  G03B27/52

CPC分类号： G03B27/32 ,  G03F7/705

摘要： A lithography process window analyzing method for setting a process window based on ranges of exposure amounts and focus positions, and giving evaluation of reliability of the set process window, includes setting, based on a plurality of process conditions including exposure amounts and focus positions in the performed exposure processing, analysis reliability M for process conditions including an arbitrary exposure amount and an arbitrary focus position; calculating reliability R of the process window based on the analysis reliability M concerning the process conditions included in the process window; and comparing a magnitude relation between the reliability R and a predetermined threshold and determining presence or absence of reliability of the process window according to a result of the comparison.

摘要翻译： 一种用于基于曝光量和焦点位置的范围来设置处理窗口的光刻处理窗口分析方法，以及对设置的处理窗口的可靠性的评估，包括基于多个处理条件，包括曝光量和焦点位置 执行曝光处理，包括任意曝光量和任意焦点位置的处理条件的分析可靠度M; 基于与处理窗口中包含的处理条件有关的分析可靠度M来计算处理窗口的可靠度R; 以及根据比较结果比较可靠度R和预定阈值之间的大小关系，并确定处理窗口的可靠性的存在与否。

公开(公告)号：US07685556B2

公开(公告)日：2010-03-23

申请号：US11062437

申请日：2005-02-23

申请人： Kazuya Fukuhara ,  Daisuke Kawamura ,  Shoji Mimotogi

发明人： Kazuya Fukuhara ,  Daisuke Kawamura ,  Shoji Mimotogi

IPC分类号： G06F17/50

CPC分类号： G03F7/705 ,  G03F1/36 ,  G03F1/70 ,  G03F7/70133 ,  G03F7/70433

摘要： According to an aspect of the invention, there is provided a mask data correction method used when forming a photomask used in a photolithography process, comprising correcting mask data on the basis of simulation performed by using information including nonuniformity of an illumination luminance distribution in an exposure apparatus which uses the photomask formed by using the mask data obtained by the correction result.

摘要翻译： 根据本发明的一个方面，提供了一种掩模数据校正方法，该方法在形成光刻工艺中使用的光掩模时使用，包括：基于通过使用包括曝光中的照度亮度分布的不均匀性的信息进行的模拟来校正掩模数据 使用通过使用通过校正结果获得的掩模数据形成的光掩模的装置。