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    FABRICATION OF STABLE ELECTRODE/DIFFUSION BARRIER LAYERS FOR THERMOELECTRIC FILLED SKUTTERUDITE DEVICES
    32.
    发明申请
    FABRICATION OF STABLE ELECTRODE/DIFFUSION BARRIER LAYERS FOR THERMOELECTRIC FILLED SKUTTERUDITE DEVICES 有权
    稳定电极/扩散障碍层的制造用于热电填充的SKUTTERUDITE设备

    公开(公告)号：US20140377901A1

    公开(公告)日：2014-12-25

    申请号：US14310840

    申请日：2014-06-20

    Applicant: University of Houston System ,  Massachusetts Institute of Technology

    Inventor： Qing Jie ,  Zhifeng Ren ,  Gang Chen

    IPC: H01L35/34 ,  H01L35/20 ,  H01L35/22

    CPC classification number: H01L35/34 ,  H01L35/08 ,  H01L35/14 ,  H01L35/20 ,  H01L35/22

    Abstract: Disclosed are methods for the manufacture of n-type and p-type filled skutterudite thermoelectric legs of an electrical contact. A first material of CoSi2 and a dopant are ball-milled to form a first powder which is thermo-mechanically processed with a second powder of n-type skutterudite to form a n-type skutterudite layer disposed between a first layer and a third layer of the doped-CoSi2. In addition, a plurality of components such as iron, and nickel, and at least one of cobalt or chromium are ball-milled form a first powder that is thermo-mechanically processed with a p-type skutterudite layer to form a p-type skutterudite layer “second layer” disposed between a first and a third layer of the first powder. The specific contact resistance between the first layer and the skutterudite layer for both the n-type and the p-type skutterudites subsequent to hot-pressing is less than about 10.0 μΩ·cm2.

    Abstract translation: 公开了用于制造电触头的n型和p型填充方钴矿热电腿的方法。 将CoSi 2和掺杂剂的第一材料球磨以形成用n型方钴矿的第二粉末热机械加工的第一粉末，以形成设置在第一层和第三层之间的n型方钴矿层 掺杂CoSi2。 此外，将多种组分如铁和镍以及至少一种钴或铬球磨成形成第一粉末，其用p型方钴矿层热机械加工以形成p型方钴矿 层“第二层”设置在第一和第三层之间。 在热压之后的n型和p型方钴矿的第一层和方钴矿层之间的具体接触电阻小于约10.0μΩ·cmgr·cm 2。

    Transparent, anti-fog tape or film and related devices and methods
    36.
    发明授权
    Transparent, anti-fog tape or film and related devices and methods 有权

    公开(公告)号：US12209207B2

    公开(公告)日：2025-01-28

    申请号：US17833101

    申请日：2022-06-06

    Applicant: Massachusetts Institute of Technology

    Inventor： Gang Chen ,  Xuanhe Zhao ,  Shaoting Lin ,  Yoichiro Tsurimaki

    IPC: C09J183/06 ,  C09J7/24 ,  C09J7/30

    Abstract: The present disclosure generally relates to a stretchable anti-fogging tape (SAT) that can be applied to diverse transparent materials with varied curvatures for persistent fogging prevention. The SAT comprises three synergistically-combined transparent layers: i) a stretchable middle layer with high elastic recovery to keep transparent materials tightly bound; ii) an anti-fogging top layer to impart hydrophilicity to transparent materials; and iii) an adhesive bottom layer to form robust yet reversible adhesion between transparent materials and SATs. The SAT can be configured to have water condensate form a predominantly continuous film thereon in response to a high humidity environment At least two applications are demonstrated, including the SAT-adhered eyeglasses and goggles for clear fog-free vision, and the SAT-adhered condensation cover for efficient solar-powered freshwater production.

    Fabrication of stable electrode/diffusion barrier layers for thermoelectric filled skutterudite devices
    38.
    发明授权
    Fabrication of stable electrode/diffusion barrier layers for thermoelectric filled skutterudite devices 有权

    公开(公告)号：US10818832B2

    公开(公告)日：2020-10-27

    申请号：US15627593

    申请日：2017-06-20

    Applicant: University of Houston System ,  Massachusetts Institute of Technology

    Inventor： Qing Jie ,  Zhifeng Ren ,  Gang Chen

    IPC: H01L35/34 ,  H01L35/14 ,  H01L35/08 ,  H01L35/18 ,  H01L35/20 ,  H01L35/22

    Abstract: Disclosed are methods for the manufacture of n-type and p-type filled skutterudite thermoelectric legs of an electrical contact. A first material of CoSi2 and a dopant are ball-milled to form a first powder which is thermo-mechanically processed with a second powder of n-type skutterudite to form a n-type skutterudite layer disposed between a first layer and a third layer of the doped-CoSi2. In addition, a plurality of components such as iron, and nickel, and at least one of cobalt or chromium are ball-milled form a first powder that is thermo-mechanically processed with a p-type skutterudite layer to form a p-type skutterudite layer “second layer” disposed between a first and a third layer of the first powder. The specific contact resistance between the first layer and the skutterudite layer for both the n-type and the p-type skutterudites subsequent to hot-pressing is less than about 10.0 μΩ·cm2.

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