Image processing device
    32.
    发明授权
    Image processing device 有权
    图像处理装置

    公开(公告)号:US08161406B2

    公开(公告)日:2012-04-17

    申请号:US12283690

    申请日:2008-09-15

    申请人: Tetsuya Maeda

    发明人: Tetsuya Maeda

    IPC分类号: G06F3/048

    摘要: An image processing device 100 includes a mode selection processing portion 50 capable of selecting a desired operational mode, a program registration processing portion 51 for storing in a program memory portion 57 the selected operational mode as a piece of program information, a program selection processing portion 52 capable of selecting a desired piece of program information from a plurality of pieces of program information stored in the program memory portion 57, a program call processing portion 53 for setting the operational mode on the basis of the piece of program information selected by the program selection processing portion 52, and a program information search processing portion 54 for searching a piece of program information from the plurality of pieces of program information stored in the program memory portion 57 on the basis of a piece of search key information corresponding to an individual operational mode.

    摘要翻译: 图像处理装置100包括能够选择期望的操作模式的模式选择处理部分50,用于在程序存储器部分57中存储所选择的操作模式作为一条节目信息的节目注册处理部分51,节目选择处理部分 能够从存储在程序存储器部分57中的多个程序信息中选择所需程序信息的程序呼叫处理部分53,用于根据程序选择的程序信息设置操作模式 选择处理部分52以及节目信息搜索处理部分54,用于根据与单独操作对应的一条搜索关键信息,从存储在程序存储部分57中的多条节目信息中搜索节目信息 模式。

    Silicon nitride-melilite composite sintered body and device utilizing the same
    34.
    发明授权
    Silicon nitride-melilite composite sintered body and device utilizing the same 有权
    氮化硅 - 辉石复合烧结体及其利用方法

    公开(公告)号:US08071496B2

    公开(公告)日:2011-12-06

    申请号:US12616514

    申请日:2009-11-11

    IPC分类号: C04B35/587 G01R31/26

    摘要: A silicon nitride-melilite composite sintered body in accordance with the invention includes silicon nitride and a melilite Me2Si3O3N4, where Me denotes a metal element combining with silicon nitride to generate the melilite. The silicon nitride-melilite composite sintered body contains Si in a range of 41 to 83 mole percent in Si3N4 equivalent and Me in a range of 13 to 50 mole percent in oxide equivalent. The silicon nitride-melilite composite sintered body has an average thermal expansion coefficient that is arbitrarily adjustable in a range of 2 to 6 ppm/K at temperatures of 23 to 150° C. The silicon nitride-melilite composite sintered body has a high Young's modulus, a high mechanical strength, and excellent sintering performance. A device used for inspection of semiconductor in accordance with the invention utilizes such a silicon nitride-melilite composite sintered body.

    摘要翻译: 根据本发明的氮化硅 - 辉石复合烧结体包括氮化硅和Meliteite Me2Si3O3N4,其中Me表示与氮化硅结合以产生melilite的金属元素。 氮化硅 - 辉石复合烧结体的Si 3 N 4当量中Si为41〜83摩尔%,Me为氧化物当量的13〜50摩尔%。 氮化硅 - 辉石复合烧结体的平均热膨胀系数在23〜150℃的温度范围内可以在2〜6ppm / K的范围内任意调整。氮化硅 - 辉石复合烧结体的杨氏模量高 ,机械强度高,烧结性能优异。 根据本发明的用于半导体检查的装置利用这种氮化硅 - 辉石复合烧结体。

    Image processing device
    35.
    发明申请
    Image processing device 有权
    图像处理装置

    公开(公告)号:US20090089708A1

    公开(公告)日:2009-04-02

    申请号:US12283690

    申请日:2008-09-15

    申请人: Tetsuya Maeda

    发明人: Tetsuya Maeda

    IPC分类号: G06F3/048

    摘要: An image processing device 100 includes a mode selection processing portion 50 capable of selecting a desired operational mode, a program registration processing portion 51 for storing in a program memory portion 57 the selected operational mode as a piece of program information, a program selection processing portion 52 capable of selecting a desired piece of program information from a plurality of pieces of program information stored in the program memory portion 57, a program call processing portion 53 for setting the operational mode on the basis of the piece of program information selected by the program selection processing portion 52, and a program information search processing portion 54 for searching a piece of program information from the plurality of pieces of program information stored in the program memory portion 57 on the basis of a piece of search key information corresponding to an individual operational mode.

    摘要翻译: 图像处理装置100包括能够选择期望的操作模式的模式选择处理部分50,用于在程序存储器部分57中存储所选择的操作模式作为一条节目信息的节目注册处理部分51,节目选择处理部分 能够从存储在程序存储器部分57中的多个程序信息中选择所需程序信息的程序呼叫处理部分53,用于根据程序选择的程序信息设置操作模式 选择处理部分52以及节目信息搜索处理部分54,用于根据与单独操作对应的一条搜索关键信息,从存储在程序存储部分57中的多条节目信息中搜索节目信息 模式。

    Method of manufacturing electrically erasable semiconductor non-volatile
memory device
    37.
    发明授权
    Method of manufacturing electrically erasable semiconductor non-volatile memory device 失效
    电可擦除半导体非易失性存储器件的制造方法

    公开(公告)号:US5950085A

    公开(公告)日:1999-09-07

    申请号:US620929

    申请日:1996-03-22

    摘要: A method of manufacturing an electrically erasable semiconductor non-volatile memory device comprises forming a field insulating film on a surface of a semiconductor substrate having a first conductivity type. A gate insulating film is formed on the surface of the semiconductor substrate. Source and drain regions having a second conductivity type are formed in the surface of the semiconductor substrate in spaced-apart relationship with each other by introducing impurity ions having the second conductivity type into the semiconductor substrate with an acceleration energy sufficient to form a peak value of impurity concentration at a depth of more than approximately 500 .ANG. from the surface of the semiconductor substrate. The gate insulating film is then etched on the drain region to form a tunnel region having opposite sides connected to the field insulating film. Thereafter, a tunnel insulating film is formed on the tunnel region and a floating gate electrode is formed over the source region, the drain region and the semiconductor substrate through the gate insulating film and the tunnel insulating film. A control insulating film is then formed on the floating gate electrode, and a control gate electrode is formed over the floating gate electrode through the control insulating film.

    摘要翻译: 一种制造电可擦除半导体非易失性存储器件的方法包括在具有第一导电类型的半导体衬底的表面上形成场绝缘膜。 在半导体衬底的表面上形成栅极绝缘膜。 具有第二导电类型的源极和漏极区域以相互间隔的关系形成在半导体衬底的表面中,通过将具有第二导电类型的杂质离子引入到半导体衬底中,具有足以形成峰值的加速度能量 在半导体衬底的表面上的深度大于约500的杂质浓度。 然后在漏极区上蚀刻栅极绝缘膜,以形成具有连接到场绝缘膜的相对侧的隧道区域。 此后,在隧道区域上形成隧道绝缘膜,并且通过栅极绝缘膜和隧道绝缘膜在源区域,漏极区域和半导体衬底上形成浮栅电极。 然后在浮栅上形成控制绝缘膜,通过控制绝缘膜在浮栅上形成控制栅电极。

    Driver program
    39.
    发明授权
    Driver program 有权
    驱动程序

    公开(公告)号:US08860987B2

    公开(公告)日:2014-10-14

    申请号:US13236335

    申请日:2011-09-19

    IPC分类号: H04N1/00 G06F3/12

    摘要: A non-transitory computer readable medium stores a driver program for an image forming apparatus. The driver program causes the computer to perform the steps of: (a) causing a display device of the computer to display a driver screen that transmits a job request to the image forming apparatus in accordance with a user operation of a user; and (b) if a predetermined user interface element in the driver screen is operated, causing the image forming apparatus to transmit user setting information on the user to the computer and causing the display device of the computer to display a user setting information page that includes the user setting information.

    摘要翻译: 非暂时性计算机可读介质存储图像形成装置的驱动程序。 驱动程序使计算机执行以下步骤:(a)使计算机的显示装置根据用户的用户操作显示向图像形成装置发送作业请求的驱动程序画面; 以及(b)如果驱动程序画面中的预定用户界面元素被操作,使图像形成装置向用户发送用户设置信息给计算机,并使计算机的显示装置显示包括 用户设置信息。