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    Method of manufacturing electrically erasable semiconductor non-volatile memory device
    1.
    发明授权
    Method of manufacturing electrically erasable semiconductor non-volatile memory device 失效
    电可擦除半导体非易失性存储器件的制造方法

    公开(公告)号：US5950085A

    公开(公告)日：1999-09-07

    申请号：US620929

    申请日：1996-03-22

    申请人： Yoshikazu Kojima ,  Tetsuya Maeda

    发明人： Yoshikazu Kojima ,  Tetsuya Maeda

    IPC分类号： H01L21/8247 ,  H01L21/336 ,  H01L27/115 ,  H01L29/423 ,  H01L29/788 ,  H01L29/792

    CPC分类号： H01L29/66825 ,  H01L29/42324 ,  H01L29/7883

    摘要： A method of manufacturing an electrically erasable semiconductor non-volatile memory device comprises forming a field insulating film on a surface of a semiconductor substrate having a first conductivity type. A gate insulating film is formed on the surface of the semiconductor substrate. Source and drain regions having a second conductivity type are formed in the surface of the semiconductor substrate in spaced-apart relationship with each other by introducing impurity ions having the second conductivity type into the semiconductor substrate with an acceleration energy sufficient to form a peak value of impurity concentration at a depth of more than approximately 500 .ANG. from the surface of the semiconductor substrate. The gate insulating film is then etched on the drain region to form a tunnel region having opposite sides connected to the field insulating film. Thereafter, a tunnel insulating film is formed on the tunnel region and a floating gate electrode is formed over the source region, the drain region and the semiconductor substrate through the gate insulating film and the tunnel insulating film. A control insulating film is then formed on the floating gate electrode, and a control gate electrode is formed over the floating gate electrode through the control insulating film.

    摘要翻译： 一种制造电可擦除半导体非易失性存储器件的方法包括在具有第一导电类型的半导体衬底的表面上形成场绝缘膜。 在半导体衬底的表面上形成栅极绝缘膜。 具有第二导电类型的源极和漏极区域以相互间隔的关系形成在半导体衬底的表面中，通过将具有第二导电类型的杂质离子引入到半导体衬底中，具有足以形成峰值的加速度能量 在半导体衬底的表面上的深度大于约500的杂质浓度。 然后在漏极区上蚀刻栅极绝缘膜，以形成具有连接到场绝缘膜的相对侧的隧道区域。 此后，在隧道区域上形成隧道绝缘膜，并且通过栅极绝缘膜和隧道绝缘膜在源区域，漏极区域和半导体衬底上形成浮栅电极。 然后在浮栅上形成控制绝缘膜，通过控制绝缘膜在浮栅上形成控制栅电极。

    Low power oscillation circuit and non-volatile semiconductor memory having ring oscillator
    3.
    发明授权
    Low power oscillation circuit and non-volatile semiconductor memory having ring oscillator 失效
    低功耗振荡电路和具有环形振荡器的非易失性半导体存储器

    公开(公告)号：US06188293B1

    公开(公告)日：2001-02-13

    申请号：US08713089

    申请日：1996-09-16

    申请人： Masanori Miyagi ,  Yoshikazu Kojima

    发明人： Masanori Miyagi ,  Yoshikazu Kojima

    IPC分类号： H03B524

    CPC分类号： H03K3/011 ,  H03K3/0315 ,  H03K3/354 ,  H03K5/133 ,  H03K2005/00039 ,  H03K2005/0013 ,  H03K2005/00195

    摘要： An low-power consumption integrated ring oscillator capable of stable operation throughout a wide voltage range without undergoing a large frequency change includes a first constant voltage generating circuit having an enhancement mode P-MOS transistor and a depletion mode N-MOS transistor and a second constant voltage generating circuit having a depletion mode N-MOS transistor and an enhancement mode N-MOS transistor. A first constant voltage generated by the first constant voltage circuit is applied to a gate electrode of a P-MOS transistor of transmission gates connected between respective cascaded inverters of the ring oscillator. A second constant voltage generated by the second constant voltage generating circuit is connected to the gate electrode of an N-MOS transistor of the transmission gates. By this construction, current consumption is reduced and battery lifetime can be increased. The boosting circuit for writing and erasing an EEPROM circuit may be formed with the low power ring oscillator.

    摘要翻译： 能够在宽电压范围内稳定工作而不经历大的频率变化的低功耗集成环形振荡器包括具有增强型P-MOS晶体管和耗尽型N-MOS晶体管的第一恒定电压产生电路和第二常数 具有耗尽型N-MOS晶体管和增强型N-MOS晶体管的电压产生电路。 由第一恒压电路产生的第一恒定电压被施加到连接在环形振荡器的各个级联反相器之间的传输门的P-MOS晶体管的栅电极。 由第二恒压产生电路产生的第二恒定电压连接到传输门的N-MOS晶体管的栅电极。 通过这种结构，电流消耗降低，并且可以提高电池寿命。 用于写入和擦除EEPROM电路的升压电路可以由低功率环形振荡器形成。

    Charge/discharge control circuit and chargeable electric power source apparatus
    5.
    发明授权
    Charge/discharge control circuit and chargeable electric power source apparatus 有权
    充放电控制电路和充电电源装置

    公开(公告)号：US6097177A

    公开(公告)日：2000-08-01

    申请号：US196699

    申请日：1998-11-20

    申请人： Minoru Sudo ,  Takayuki Takashina ,  Yoshikazu Kojima ,  Sadashi Shimoda ,  Hiroshi Mukainakano

    发明人： Minoru Sudo ,  Takayuki Takashina ,  Yoshikazu Kojima ,  Sadashi Shimoda ,  Hiroshi Mukainakano

    IPC分类号： H02J7/00 ,  H02J7/14 ,  H01M10/46

    CPC分类号： H02J7/0026 ,  H02J7/0031 ,  H02J7/1438 ,  H02J2007/004 ,  H02J7/0034

    摘要： A charge/discharge control circuit for controlling the charging and discharging of a secondary cell has a voltage dividing circuit for dividing an output voltage of the secondary cell, which may comprise plural cells, an overcharge detection circuit for detecting an overcharge state of the secondary cell, an overdischarge detection circuit for detecting an overdischarge state of the secondary cell, and a control circuit for receiving and processing an output signal of the overcharge detecting circuit and the overdischarge detecting circuit and controlling the switch. In a preferred embodiment, an overcharge reference voltage source used for the overcharge voltage detection circuit is used also as an overdischarge reference voltage source for the overdischarge voltage detection circuit.

    摘要翻译： 用于控制二次电池的充电和放电的充电/放电控制电路具有分压电路，用于对可能包括多个电池的二次电池的输出电压进行分压，用于检测二次电池的过充电状态的过充电检测电路 用于检测二次电池的过放电状态的过放电检测电路，以及用于接收和处理过充电检测电路和过放电检测电路的输出信号并控制开关的控制电路。 在优选实施例中，用于过充电电压检测电路的过充电参考电压源也用作过放电电压检测电路的过放电参考电压源。

    High voltage inverter circuit
    6.
    发明授权
    High voltage inverter circuit 失效
    高压逆变电路

    公开(公告)号：US5965921A

    公开(公告)日：1999-10-12

    申请号：US680346

    申请日：1996-07-17

    申请人： Yoshikazu Kojima

    发明人： Yoshikazu Kojima

    IPC分类号： H01L21/8234 ,  H01L21/8238 ,  H01L27/06 ,  H01L27/088 ,  H01L27/092 ,  H01L29/76 ,  H01L27/01 ,  H01L29/00 ,  H01L29/94

    CPC分类号： H01L27/0688 ,  H01L27/0922

    摘要： In an integrated circuit type semiconductor device consisting of MISFETs, high rated voltage characteristic is obtained in a gate insulation film structure of a thin film. Further, a reduction in the manufacturing cost of semiconductor devices including high-rated voltage and low rated voltage MISFETs. An intermediate gate electrode is provided which overlies a channel formation region and a gate region with the same gate insulation film being sandwiched therebetween. The gate region is provided on the surface of a substrate. The channel formation region has an impedance indirectly controllable via the intermediate gate electrode upon application of a voltage to the gate region. The intermediate gate electrode is provided with a voltage reset(set) means connected thereto for eliminating the occurrence of charge-up.

    摘要翻译： 在由MISFET组成的集成电路型半导体器件中，在薄膜的栅绝缘膜结构中获得高额定电压特性。 此外，降低包括高额定电压和低额定电压MISFET的半导体器件的制造成本。 提供了一个中间栅极电极，其位于沟道形成区域和栅极区域之间，其间夹有相同的栅极绝缘膜。 栅极区域设置在基板的表面上。 沟道形成区域在向栅极区域施加电压时具有经由中间栅电极间接控制的阻抗。 中间栅电极设置有与其连接的电压复位（集合）装置，以消除充电的发生。

    Real-time semiconductor radiation detector
    9.
    发明授权
    Real-time semiconductor radiation detector 失效
    实时半导体辐射探测器

    公开(公告)号：US5757040A

    公开(公告)日：1998-05-26

    申请号：US667453

    申请日：1996-06-21

    申请人： Yutaka Saito ,  Yoshikazu Kojima

    发明人： Yutaka Saito ,  Yoshikazu Kojima

    IPC分类号： H01L27/14 ,  H01L27/146 ,  H01L31/10 ,  H01L31/00

    CPC分类号： H01L27/14658 ,  H01L27/14643 ,  H01L27/14681

    摘要： Semiconductor radial rays detector is provided that improves a breakdown voltage yield of a gate insulating film of a semiconductor radial rays detector and prevents an increase in resistance of a gate electrode caused by the improvement in the breakdown voltage yield. In the inventive semiconductor radial rays detector, material used as a gate electrode 1 of a reading condenser is not an Al film (aluminum film) but a POLY Si film (a polycrystalline silicon film), or silicide or metal including silicide with a high melting point such as WSi (tungsten silicide) (strictly its composition is indefinite as expressed as W.sub.x Si.sub.y) or TiSi (titan silicide) (expressed as Ti.sub.x Si, in the same manner). Further, a contact hole 2 is provided on the gate electrode 1 through an inter-insulating film 4 as the inter-insulating film for wiring, and an Al electrode 3 coupled to an output terminal is provided over the contact

    摘要翻译： 提供半导体径向射线检测器，其提高半导体径向射线检测器的栅极绝缘膜的击穿电压产生，并且防止由于击穿电压产量的提高而引起的栅电极的电阻增加。 在本发明的半导体径向射线检测器中，用作读取冷凝器的栅电极1的材料不是Al膜（铝膜），而是POLY Si膜（多晶硅膜），或者包含高熔点的硅化物的硅化物或金属 （硅化钨）（严格地说，其组成如WxSiy所表示的不定）或TiSi（钛硅化物）（以相同的方式表示为TixSi）。 此外，通过作为布线用绝缘膜的绝缘膜4在栅电极1上设置接触孔2，并且在触点上设置耦合到输出端子的Al电极3

    Motor driven bell
    10.
    发明授权
    Motor driven bell 失效
    电机铃

    公开(公告)号：US4952907A

    公开(公告)日：1990-08-28

    申请号：US437077

    申请日：1989-11-14

    申请人： Yoshikazu Kojima

    发明人： Yoshikazu Kojima

    IPC分类号： G10K1/064

    CPC分类号： G10K1/064

    摘要： In a motor driven bell, a pair of cam members are operatively connected to a drive shaft of a motor. One of the cam members acts directly on a leaf spring for moving a hammer attached to the leaf spring generally in parallel relation to the axis of rotation of the cam member to thereby allow the hammer to strike against an associated gong. The other cam member is disposed generally parallel to the cam member so that the leaf spring interposes therebetween. Therefore, the cam members define an amplitude of the leaf spring, whereby the hammer is able to strike against the gong without mis-striking.

    摘要翻译： 在马达驱动的钟罩中，一对凸轮件与马达的驱动轴可操作地连接。 一个凸轮部件直接作用在板簧上，用于使与弹簧的旋转轴线平行的锤子附着在板簧上移动，从而允许锤子撞击相关联的锣。 另一个凸轮构件大致平行于凸轮构件设置，使得片簧间隔开。 因此，凸轮构件限定了板簧的振幅，由此锤子能够在不发生打击的情况下撞击锣。