公开(公告)号：US20080067337A1

公开(公告)日：2008-03-20

申请号：US11779899

申请日：2007-07-19

申请人： Mayuka Oosaki ,  Chie Shishido ,  Maki Tanaka ,  Hiroki Kawada

发明人： Mayuka Oosaki ,  Chie Shishido ,  Maki Tanaka ,  Hiroki Kawada

IPC分类号： G01D18/00 ,  G01N23/00

CPC分类号： G01N23/225 ,  H01J2237/2823

摘要： In the case of monitoring a resolution of a scanning electron microscope, it is required to prepare a sample and to use a measuring algorithm so as to reduce the pattern dependency of an index value of resolution to be measured in order to measure a variation in the size of an electron beam with a high degree of accuracy. According to the present invention, there is used a sample having a sectional shape which is appropriate for monitoring the resolution, that is, the sample has a pattern with such a sectional shape that a side wall of the pattern is inclined so as to prevent an electron beam irradiated on the sample from impinging upon the side wall of the pattern. With this configuration, it is possible carry out such resolution monitor that does not depend upon a sectional shape of a pattern.

摘要翻译： 在监视扫描电子显微镜的分辨率的情况下，需要准备样本并使用测量算法，以便降低待测量的分辨率的指标值的图案依赖性，以便测量所测量的分辨率 具有高精度的电子束尺寸。 根据本发明，使用具有适合于监视分辨率的截面形状的样品，即，样品具有图案侧壁倾斜的截面形状的图案，以防止 照射在样品上的电子束撞击在图案的侧壁上。 利用这种配置，可以执行不依赖于图案的截面形状的这种分辨率监视器。

公开(公告)号：US20070187595A1

公开(公告)日：2007-08-16

申请号：US11673057

申请日：2007-02-09

申请人： Maki Tanaka ,  Chie Shishido

发明人： Maki Tanaka ,  Chie Shishido

IPC分类号： G01N23/00

CPC分类号： G01N23/2251 ,  G01N2223/6116 ,  H01J2237/24578

摘要： To provide a consistent, high-speed, high-precision measurement method based on an electron beam simulation by reflecting the apparatus characteristics of a CD-SEM in an electron beam simulation, the present invention discloses a method for measuring a measurement target pattern with a CD-SEM, the method comprising the steps of performing an electron beam simulation on various target pattern shapes, which is reflected apparatus characteristic and image acquisition conditions; creating SEM simulated waveforms; storing a combination of the created SEM simulated waveforms and pattern shape information corresponding to the created SEM simulated waveforms as a library; comparing an acquired actual electron microscope image with the SEM simulated waveforms; selecting the SEM simulated waveform that is most similar to the actual electron microscope image; and estimating the shape of the measurement target pattern from the pattern shape information corresponding to the selected SEM simulated waveform.

摘要翻译： 为了通过在电子束模拟中反映CD-SEM的装置特性，基于电子束模拟提供一致的，高速，高精度的测量方法，本发明公开了一种用于测量目标图案的方法， CD-SEM，该方法包括以下步骤：对各种目标图案形状进行电子束模拟，反射装置特性和图像采集条件; 创建SEM模拟波形; 存储所创建的SEM模拟波形的组合和对应于所创建的SEM模拟波形的图案形状信息作为库; 将获得的实际电子显微镜图像与SEM模拟波形进行比较; 选择与实际电子显微镜图像最相似的SEM模拟波形; 以及根据与选择的SEM模拟波形对应的图案形状信息来估计测量对象图案的形状。

公开(公告)号：US20070120078A1

公开(公告)日：2007-05-31

申请号：US11657689

申请日：2007-01-25

申请人： Maki Tanaka ,  Hidetoshi Morokuma ,  Chie Shishido ,  Yuji Takagi

发明人： Maki Tanaka ,  Hidetoshi Morokuma ,  Chie Shishido ,  Yuji Takagi

IPC分类号： G01N21/86 ,  G01V8/00

CPC分类号： H01J37/28 ,  H01J37/304 ,  H01J2237/2814 ,  H01J2237/2817 ,  H01J2237/30455

摘要： A method of measuring pattern dimensions includes evaluating a relationship between cross-sectional shapes of a pattern and measurement errors of a pattern in a specified image processing technique, and conducting an actual measurement in which dimension measurement of an evaluation objective pattern from image signals of a microscope is carried out, and revising errors of the dimension measurement of the evaluation objective pattern based on the relationship between the cross-sectional shapes of a pattern and the measurement errors of a pattern previously evaluated.

摘要翻译： 测量图案尺寸的方法包括评估图案的横截面形状与特定图像处理技术中的图案的测量误差之间的关系，并且进行实际测量，其中评估对象图案的尺寸测量从图像信号 基于图案的截面形状与先前评估的图案的测量误差之间的关系，进行显微镜的修正，并修正评价对象图案的尺寸测量的误差。

公开(公告)号：US07166839B2

公开(公告)日：2007-01-23

申请号：US11320752

申请日：2005-12-30

申请人： Maki Tanaka ,  Chie Shishido ,  Yuji Takagi

发明人： Maki Tanaka ,  Chie Shishido ,  Yuji Takagi

IPC分类号： G21K7/00

CPC分类号： G01N23/225 ,  G01N23/2251 ,  H01J37/244 ,  H01J37/3171 ,  H01J2237/2814 ,  H01L21/32137 ,  H01L22/10 ,  H01L2924/0002 ,  H01L2924/00

摘要： Conventionally, there is no method for quantitatively evaluating the three-dimensional shape of an etched pattern in a non-destructive manner and it takes much time and costs to determine etching conditions. With the conventional length measuring method only, it has been impossible to detect an abnormality in the three-dimensional shape and also difficult to control the etching process. According to the present invention, variations in signal amounts of an SEM image are utilized to compute three-dimensional shape data on the pattern associated with the etching process steps, whereby the three-dimensional shape is quantitatively evaluated. Besides, determination of etching process conditions and process control are performed based on the three-dimensional shape data obtained. The present invention makes it is possible to quantitatively evaluate the three-dimensional shape of the etched pattern in a non-destructive manner. Further, the efficiency of determining the etching process conditions and a stable etching process can be realized.

摘要翻译： 通常，没有以非破坏性的方式定量地评价蚀刻图案的三维形状的方法，并且确定蚀刻条件需要花费大量时间和成本。 仅使用常规的长度测量方法，就不可能检测到三维形状的异常，并且也难以控制蚀刻工艺。 根据本发明，利用SEM图像的信号量的变化来计算与蚀刻工艺步骤相关联的图案上的三维形状数据，从而定量评估三维形状。 此外，基于获得的三维形状数据进行蚀刻工艺条件和工艺控制的确定。 本发明能够以非破坏性的方式对蚀刻图案的三维形状进行定量评价。 此外，可以实现确定蚀刻工艺条件的效率和稳定的蚀刻工艺。

公开(公告)号：US07116816B2

公开(公告)日：2006-10-03

申请号：US09793922

申请日：2001-02-28

申请人： Maki Tanaka ,  Takashi Hiroi ,  Masahiro Watanabe ,  Chie Shishido ,  Hiroshi Morioka ,  Kenji Watanabe ,  Hiroshi Miyai ,  Mari Nozoe

发明人： Maki Tanaka ,  Takashi Hiroi ,  Masahiro Watanabe ,  Chie Shishido ,  Hiroshi Morioka ,  Kenji Watanabe ,  Hiroshi Miyai ,  Mari Nozoe

IPC分类号： G06K9/00

CPC分类号： G06T7/001 ,  G06T2207/10056 ,  G06T2207/30121 ,  G06T2207/30148 ,  H01J37/28 ,  H01J2237/221 ,  H01J2237/24592 ,  H01J2237/2811 ,  H01J2237/2817

摘要： In order to enable the most suitable image processing condition to be set as one in which a dispersion in brightness between comparing images caused by object to be inspected and an image detecting system is not applied as a false information, in the present invention, there is obtained a noise characteristic of a secondary electron image caused by the image detecting system is calculated, the most suitable image processing parameters are determined depending on the object to be inspected on the basis of the characteristic, and its comparing processing is performed by using the noise characteristic and the image of the object to be inspected, thereby a dispersion in process for the object to be inspected is evaluated.

摘要翻译： 为了使最合适的图像处理条件被设置为将未被应用的被检查对象所引起的比较图像与图像检测系统之间的亮度的色散作为虚假信息，在本发明中，存在 计算出由图像检测系统引起的二次电子图像的噪声特性，根据特性根据被检查对象确定最合适的图像处理参数，并且通过使用噪声来执行其比较处理 特性和待检查对象的图像，从而评估待检查对象的分散处理。

公开(公告)号：US06984589B2

公开(公告)日：2006-01-10

申请号：US10460217

申请日：2003-06-13

申请人： Maki Tanaka ,  Chie Shishido ,  Yuji Takagi

发明人： Maki Tanaka ,  Chie Shishido ,  Yuji Takagi

IPC分类号： H01L21/306

CPC分类号： G01N23/225 ,  G01N23/2251 ,  H01J37/244 ,  H01J37/3171 ,  H01J2237/2814 ,  H01L21/32137 ,  H01L22/10 ,  H01L2924/0002 ,  H01L2924/00

摘要： Conventionally, there is no method for quantitatively evaluating the three-dimensional shape of an etched pattern in a non-destructive manner and it takes much time and costs to determine etching conditions. With the conventional length measuring method only, it has been impossible to detect an abnormality in the three-dimensional shape and also difficult to control the etching process.According to the present invention, variations in signal amounts of an SEM image are utilized to compute three-dimensional shape data on the pattern associated with the etching process steps, whereby the three-dimensional shape is quantitatively evaluated. Besides, determination of etching process conditions and process control are performed based on the three-dimensional shape data obtained.The present invention makes it is possible to quantitatively evaluate the three-dimensional shape of the etched pattern in a non-destructive manner. Further, the efficiency of determining the etching process conditions and a stable etching process can be realized.

摘要翻译： 通常，没有以非破坏性的方式定量地评价蚀刻图案的三维形状的方法，并且确定蚀刻条件需要花费大量时间和成本。 仅使用常规的长度测量方法，就不可能检测到三维形状的异常，并且也难以控制蚀刻工艺。 根据本发明，利用SEM图像的信号量的变化来计算与蚀刻工艺步骤相关联的图案上的三维形状数据，从而定量评估三维形状。 此外，基于获得的三维形状数据进行蚀刻工艺条件和工艺控制的确定。 本发明能够以非破坏性的方式对蚀刻图案的三维形状进行定量评价。 此外，可以实现确定蚀刻工艺条件的效率和稳定的蚀刻工艺。

公开(公告)号：US20050285034A1

公开(公告)日：2005-12-29

申请号：US11156478

申请日：2005-06-21

申请人： Maki Tanaka ,  Atsushi Miyamoto ,  Hidetoshi Morokuma ,  Chie Shishido ,  Mitsuji Ikeda ,  Yasutaka Toyoda

发明人： Maki Tanaka ,  Atsushi Miyamoto ,  Hidetoshi Morokuma ,  Chie Shishido ,  Mitsuji Ikeda ,  Yasutaka Toyoda

IPC分类号： H01J37/28

CPC分类号： H01J37/28 ,  H01J2237/2814

摘要： The present invention relates to a method and apparatus for measuring a three-dimensional profile using a SEM, capable of accurately measuring the three-dimensional profile of even a flat surface or a nearly vertical surface based on the inclination angle dependence of the amount of secondary electron image signal detected by the SEM. Specifically, a tilt image obtaining unit obtains a tilt image (a tilt secondary electron image) I(2) of flat regions a and c1 on a pattern to be measured by using an electron beam incident on the pattern from an observation direction φ(2). Then, profile measuring units presume the slope (or surface inclination angle) at each point on the pattern based on the obtained tilt image and integrate successively each presumed slope value (or surface inclination angle value) to measure three-dimensional profiles S2a and S2c. This arrangement allows a three-dimensional profile to be accurately measured.

摘要翻译： 本发明涉及一种用于使用SEM测量三维轮廓的方法和装置，其能够基于二次侧的量的倾斜角度依赖性精确地测量均匀的平面或几乎垂直的表面的三维轮廓 电子图像信号由SEM检测。 具体地说，倾斜图像获取单元通过使用从观察方向phi入射到图案上的电子束来获得待测图案上的平坦区域a和c 1的倾斜图像（倾斜二次电子图像）I（2） 2）。 然后，轮廓测量单元基于所获得的倾斜图像来假设在图案上的每个点处的斜率（或表面倾斜角），并且连续地积分每个假设的斜率值（或表面倾斜角值），以测量三维轮廓S 2a和 S 2 c。 这种布置允许精确地测量三维轮廓。

公开(公告)号：US20050037271A1

公开(公告)日：2005-02-17

申请号：US10894044

申请日：2004-07-20

申请人： Chie Shishido ,  Hidetoshi Morokuma ,  Yuki Ojima ,  Maki Tanaka ,  Wataru Nagatomo

发明人： Chie Shishido ,  Hidetoshi Morokuma ,  Yuki Ojima ,  Maki Tanaka ,  Wataru Nagatomo

IPC分类号： H01L21/66 ,  G03C5/00 ,  G03F7/20 ,  G03F9/00 ,  H01L21/027

CPC分类号： G03F7/70641 ,  G03F7/705 ,  G03F7/70625 ,  Y10S430/143

摘要： In monitoring of an exposure process, a highly isolative pattern greatly changed in a shape of cross section by fluctuations in the exposure dose and the focal position is an observation target. Especially, to detect a change in a resist shape of cross section from a tapered profile to an inverse tapered profile, one of the following observation methods is employed to obtain observation data: (1) a tilt image of a resist pattern is imaged by using tilt imaging electron microscopy, (2) an electron beam image of a resist pattern is imaged under imaging conditions for generating asymmetry on an electron beam signal waveform, and (3) scattering characteristic data of a resist pattern is obtained by an optical measurement system. The observation data is applied to model data created beforehand in accordance with the exposure conditions to estimate fluctuations in the exposure dose and the focal position.

公开(公告)号：US06587581B1

公开(公告)日：2003-07-01

申请号：US09006371

申请日：1998-01-12

申请人： Yukio Matsuyama ,  Yuji Takagi ,  Takashi Hiroi ,  Maki Tanaka ,  Asahiro Kuni ,  Junzou Azuma ,  Shunji Maeda ,  Chie Shishido

发明人： Yukio Matsuyama ,  Yuji Takagi ,  Takashi Hiroi ,  Maki Tanaka ,  Asahiro Kuni ,  Junzou Azuma ,  Shunji Maeda ,  Chie Shishido

IPC分类号： G06K900

CPC分类号： G06T7/001 ,  G01N21/8851 ,  G01N21/95607 ,  G06T5/008 ,  G06T5/40 ,  G06T5/50 ,  G06T7/30 ,  G06T2207/10061 ,  G06T2207/30148 ,  H01J37/222 ,  H01J37/28 ,  H01J2237/2817

摘要： The present invention provides a scanning electron microscope (SEM) or optical inspection method and apparatus which correct differences in brightness between comparison images and thus which is capable of detecting a fine defect with a high degree of reliability without causing any false defect detection. According to the present invention, the brightness values of a pattern, which should be essentially the same, contained in two detected images to be compared are corrected in such a manner that, even if there may be a brightness difference in a portion free from defects, the brightness difference is reduced to such a degree so that it can be recognized as a normal portion. Also, a limit for the amount of correction is furnished in advance, and correction exceeding such limit value is not performed. Such correction prevents the difference in brightness that should be permitted as non-defective from being falsely recognized as a defect without overlooking great differences in brightness due to a defect.

摘要翻译： 本发明提供了一种扫描电子显微镜（SEM）或光学检查方法和装置，其校正比较图像之间的亮度差异，从而能够以高可靠性检测精细缺陷而不引起任何假缺陷检测。 根据本发明，将要被比较的两个检测图像中包含的基本上相同的图案的亮度值以这样的方式进行校正：即使在没有缺陷的部分中可能存在亮度差 ，亮度差降低到这样的程度，从而可以将其识别为正常部分。 此外，预先提供校正量的限制，并且不执行超过该限制值的校正。 这样的校正可以防止由于缺陷而将不允许的亮度差错误地识别为缺陷，而不会因为缺陷而忽略亮度的很大差异。

公开(公告)号：US06347150B1

公开(公告)日：2002-02-12

申请号：US08932193

申请日：1997-09-17

申请人： Takashi Hiroi ,  Maki Tanaka ,  Masahiro Watanabe ,  Asahiro Kuni ,  Hiroyuki Shinada ,  Mari Nozoe ,  Aritoshi Sugimoto ,  Chie Shishido

发明人： Takashi Hiroi ,  Maki Tanaka ,  Masahiro Watanabe ,  Asahiro Kuni ,  Hiroyuki Shinada ,  Mari Nozoe ,  Aritoshi Sugimoto ,  Chie Shishido

IPC分类号： G06K964

CPC分类号： G06T7/001 ,  G06T2207/10056 ,  G06T2207/30148

摘要： The present invention relates to detection of defects with simple specification of the coordinates, in the inspection of an object having a plurality of patterns in which a portion having the two-dimensional repetition and portions having the repetition only in the X direction and in the Y direction are mixedly present. The cross comparison between a notice point and comparison points, for example, which are repetitive pitches away from the notice point, is carried out, and only the portion having the difference which can be found out with any of the comparison points is extracted as a defect candidate, which results in that the portion having the two-dimensional repetition as well as the portion having the repetition only in the X direction or in the Y direction can be inspected. As a result, while the portion, such as an isolated point, having no repetition both in the X direction and in the Y direction is extracted as the defect candidate, the defect candidate is not treated as the defect in the case where the defect candidate of interest occurs regularly in a plurality of objects to be inspected, so that such a defect candidate is excluded to extract only a true defect.

摘要翻译： 本发明涉及通过简单的坐标指定来检测缺陷，在检查具有多个图案的物体时，其中具有二维重复的部分和仅在X方向上重复的部分和Y 方向混合存在。 执行通知点与比较点之间的交叉比较，比较点例如是远离通知点的重复间距，并且只有具有任何一个比较点可以发现的具有差异的部分被提取为 缺陷候补，这导致可以检查具有二维重复的部分以及仅在X方向或Y方向上具有重复的部分。 结果，虽然提取了在X方向和Y方向上都没有重复的诸如孤立点的部分作为缺陷候选，但是在缺陷候选者的情况下，缺陷候选不被视为缺陷 感兴趣的事件定期发生在要检查的多个对象中，因此排除这样的缺陷候选者仅提取真实的缺陷。