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公开(公告)号：US20210389949A1
公开(公告)日：2021-12-16
申请号：US16902009
申请日：2020-06-15
Applicant: Micron Technology, Inc.
Inventor： Scott Anthony Stoller , Douglas Eugene Majerus , Qisong Lin
Abstract: Disclosed in some examples are methods, systems, devices, memory controllers, memory dies, memory devices, and machine-readable mediums that allow for efficient updating of software instructions of the memory die. In some examples, the controller of the memory device may cause the software instructions of one or more memory dies to be updated by causing the page buffers of the one or more memory dies to be loaded with updated software instructions and subsequently issuing a command to the memory die to update the software instructions from the page buffer.
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公开(公告)号：US20210098030A1
公开(公告)日：2021-04-01
申请号：US17122531
申请日：2020-12-15
Applicant: Micron Technology, Inc
Inventor： Xiangang Luo , Jianmin Huang , Patroclo Fumagalli , Scott Anthony Stoller , Alessandro Magnavacca , Andrea Pozzato
IPC: G11C5/14 , G06F11/07 , G11C29/38 , G11C11/4099
Abstract: Systems and methods are disclosed, including determining whether to write dummy data to a first physical page of memory cells of a storage system, such as in response to a detected asynchronous power loss (APL) at the storage system, using a determined number of zeros in the first physical page.
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公开(公告)号：US10685731B2
公开(公告)日：2020-06-16
申请号：US16410764
申请日：2019-05-13
Applicant: Micron Technology, Inc.
Inventor： Ting Luo , Scott Anthony Stoller , Preston Allen Thomson , Devin Batutis , Harish Reddy Singidi , Kulachet Tanpairoj
Abstract: Disclosed in some examples are methods, systems, memory devices, and machine readable mediums for performing an erase page check. For example, in response to an unexpected (e.g., an asynchronous) shutdown, the memory device may have one or more cells that did not finish programming. The memory device may detect these cells and erase them or mark them for erasure.
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公开(公告)号：US20190066817A1
公开(公告)日：2019-02-28
申请号：US16129422
申请日：2018-09-12
Applicant: Micron Technology, Inc.
Inventor： Ting Luo , Scott Anthony Stoller , Preston Thomson , Devin Batutis , Harish Reddy Singidi , Kulachet Tanpairoj
Abstract: Disclosed in some examples are methods, systems, memory devices, and machine readable mediums for performing an erase page check. For example, in response to an unexpected (e.g., an asynchronous) shutdown, the memory device may have one or more cells that did not finish programming. The memory device may detect these cells and erase them or mark them for erasure.
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公开(公告)号：US20240355402A1
公开(公告)日：2024-10-24
申请号：US18637913
申请日：2024-04-17
Applicant: Micron Technology, Inc.
Inventor： Robert Winston Mason , Scott Anthony Stoller , Kyle Brock-Petersen
CPC classification number: G11C16/3459 , G11C16/102 , G11C16/3404
Abstract: A system and method for a memory device for detecting, by a processing device, a failure exhibited by a set of cells of a memory device, estimating a severity of the failure, identifying, based on the severity of the failure, a failed subset of cells of the set of cells, and copying data from the failed subset of cells to a second set of cells of the memory device.
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Patent Agency Ranking
36.发明公开公开(公告)号：US20240020020A1
公开(公告)日：2024-01-18
申请号：US17867204
申请日：2022-07-18
Applicant: Micron Technology, Inc.
Inventor： Sandeep Reddy Kadasani , Pitamber Shukla , Scott Anthony Stoller , Niccolo' Righetti
IPC: G06F3/06
CPC classification number: G06F3/0619 , G06F3/0688 , G06F3/0653 , G06F3/064
Abstract: A set of threshold voltage distribution width measurements are obtained for a block in a memory device. An endurance estimate is determined for the block based on the threshold voltage distribution width measurements. The endurance estimate comprises an indication of an estimated number of program/erase cycles during which data can be reliably stored by the block. One or more parameters of the block are managed based on the endurance estimate.
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公开(公告)号：US11789738B2
公开(公告)日：2023-10-17
申请号：US17986318
申请日：2022-11-14
Applicant: Micron Technology, Inc.
Inventor： Scott Anthony Stoller , Douglas Eugene Majerus , Qisong Lin
CPC classification number: G06F9/30181 , G06F3/0604 , G06F3/0659 , G06F3/0673 , G06F8/65 , G06F9/445
Abstract: Disclosed in some examples are methods, systems, devices, memory controllers, memory dies, memory devices, and machine-readable mediums that allow for efficient updating of software instructions of the memory die. In some examples, the controller of the memory device may cause the software instructions of one or more memory dies to be updated by causing the page buffers of the one or more memory dies to be loaded with updated software instructions and subsequently issuing a command to the memory die to update the software instructions from the page buffer.
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公开(公告)号：US11626163B2
公开(公告)日：2023-04-11
申请号：US17464853
申请日：2021-09-02
Applicant: Micron Technology, Inc.
Inventor： Justin Bates , Giuseppe Cariello , Pitamber Shukla , Fulvio Rori , Chiara Cerafogli , Scott Anthony Stoller
Abstract: Various embodiments provide for adjusting (or adapting) a program voltage step used to program a memory cell by a program algorithm after the program algorithm resumes from a suspension, where the program voltage step is adjusted (or adapted) based on one or more factors.
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公开(公告)号：US20230067570A1
公开(公告)日：2023-03-02
申请号：US17464853
申请日：2021-09-02
Applicant: Micron Technology, Inc.
Inventor： Justin Bates , Giuseppe Cariello , Pitamber Shukla , Fulvio Rori , Chiara Cerafogli , Scott Anthony Stoller
Abstract: Various embodiments provide for adjusting (or adapting) a program voltage step used to program a memory cell by a program algorithm after the program algorithm resumes from a suspension, where the program voltage step is adjusted (or adapted) based on one or more factors.
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公开(公告)号：US20230058645A1
公开(公告)日：2023-02-23
申请号：US17404875
申请日：2021-08-17
Applicant: Micron Technology, Inc.
Inventor： Sandeep Reddy Kadasani , Scott Anthony Stoller , Pitamber Shukla , Niccolo' Righetti , Chi Ming Chu
IPC: G06F3/06
Abstract: A read operation is performed on a memory device in accordance with a pass-through voltage setting that defines a pass-through voltage applied to one or more cells of the memory device during read operations. A number of zero bits read from the memory device based on the read operation are counted and compared with a threshold value. Based on the number of zero bits exceeding the threshold value, the pass-through voltage is increased by adjusting the pass-through voltage setting.
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