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208 条记录 (耗时 0.056 秒)

    DC-DC flyback converter having a synchronous rectification self-driven circuit
    31.
    发明授权
    DC-DC flyback converter having a synchronous rectification self-driven circuit 有权
    具有同步整流自驱动电路的DC-DC反激式转换器

    公开(公告)号：US07791903B2

    公开(公告)日：2010-09-07

    申请号：US11561937

    申请日：2006-11-21

    申请人： Congfeng Zhang ,  Hao Zhang ,  Guichao Hua

    发明人： Congfeng Zhang ,  Hao Zhang ,  Guichao Hua

    IPC分类号： H02M3/335

    CPC分类号： H02M3/33592 ,  Y02B70/1475

    摘要： A DC-DC flyback converter, includes a three-winding transformer; a primary power circuit having a first MOSFET connected to a first winding of the transformer; a secondary power circuit connected to a second winding of the transformer terminals; and a self-driven circuit connected to a third winding of the transformer. The secondary power circuit includes a synchronous rectifier in the form of a second MOSFET and the self-driven circuit further includes a delay drive circuit, an isolation differential circuit, a negative removal circuit having a third MOSFET and a synchronous rectifier trigger switch-off circuit for switching the synchronous rectifier to an off condition.

    摘要翻译： DC-DC反激式转换器，包括三绕组变压器; 主电源电路，其具有连接到变压器的第一绕组的第一MOSFET; 连接到变压器端子的第二绕组的次级电源电路; 以及连接到变压器的第三绕组的自驱动电路。 次级电源电路包括第二MOSFET形式的同步整流器，并且自驱动电路还包括延迟驱动电路，隔离差分电路，具有第三MOSFET的同步整流器和同步整流器触发关断电路 用于将同步整流器切换到关闭状态。

    Erbium-Doped Silicon Nanocrystalline Embedded Silicon Oxide Waveguide
    32.
    发明申请
    Erbium-Doped Silicon Nanocrystalline Embedded Silicon Oxide Waveguide 失效
    铒掺杂硅纳米晶体嵌入式氧化硅波导

    公开(公告)号：US20090232449A1

    公开(公告)日：2009-09-17

    申请号：US12112767

    申请日：2008-04-30

    申请人： Hao Zhang ,  Pooran Chandra Joshi ,  Apostolos T. Voutsas

    发明人： Hao Zhang ,  Pooran Chandra Joshi ,  Apostolos T. Voutsas

    IPC分类号： G02B6/26 ,  B05D5/06 ,  C23C14/48 ,  C23C14/16 ,  C23F1/00

    CPC分类号： C23C16/30 ,  C23C16/56 ,  H01L21/02156 ,  H01L21/02164 ,  H01L21/02274 ,  H01L21/02321 ,  H01L21/02362 ,  H01L21/31608

    摘要： An erbium (Er)-doped silicon (Si) nanocrystalline embedded silicon oxide (SiOx) waveguide and associated fabrication method are presented. The method provides a bottom layer, and forms an Er-doped Si nanocrystalline embedded SiOx film waveguide overlying the bottom layer, having a minimum optical attenuation at about 1540 nanometers (nm). Then, a top layer is formed overlying the Er-doped SiOx film. The Er-doped SiOx film is formed by depositing a silicon rich silicon oxide (SRSO) film using a high density plasma chemical vapor deposition (HDPCVD) process and annealing the SRSO film. After implanting Er+ ions, the Er-doped SiOx film is annealed again. The Er-doped Si nanocrystalline SiOx film includes has a first refractive index (n) in the range of 1.46 to 2.30. The top and bottom layers have a second refractive index, less than the first refractive index.

    摘要翻译： 提出了一种铒（Er）掺杂的硅（Si）纳米晶体嵌入式氧化硅（SiOx）波导及其制造方法。 该方法提供底层，并且形成覆盖底层的掺​​铒Si纳米晶体的包含SiOx的薄膜波导，在约1540纳米（nm）处具有最小的光衰减。 然后，形成覆盖Er掺杂的SiOx膜的顶层。 通过使用高密度等离子体化学气相沉积（HDPCVD）方法沉积富硅氧化物（SRSO）膜并退火SRSO膜来形成Er掺杂的SiOx膜。 在注入Er +离子后，再次对Er掺杂的SiOx膜进行退火。 掺铒Si纳米晶SiOx膜的第一折射率（n）在1.46〜2.30的范围内。 顶层和底层具有小于第一折射率的第二折射率。

    Silicon Nanocrystal Embedded Silicon Oxide Electroluminescence Device with a Mid-Bandgap Transition Layer
    33.
    发明申请
    Silicon Nanocrystal Embedded Silicon Oxide Electroluminescence Device with a Mid-Bandgap Transition Layer 有权
    具有中带隙过渡层的硅纳米晶体嵌入式硅氧化物电致发光器件

    公开(公告)号：US20080305566A1

    公开(公告)日：2008-12-11

    申请号：US12197045

    申请日：2008-08-22

    申请人： Jiandong Huang ,  Pooran Chandra Joshi ,  Hao Zhang ,  Apostolos T. Voutsas

    发明人： Jiandong Huang ,  Pooran Chandra Joshi ,  Hao Zhang ,  Apostolos T. Voutsas

    IPC分类号： H01L21/00

    CPC分类号： C23C16/30 ,  C23C16/24 ,  C23C16/401 ,  C23C16/505 ,  C23C16/56 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/02274 ,  H01L21/02532 ,  H01L21/02601 ,  H01L21/0262 ,  H01L21/31608

    摘要： A method is provided for forming a silicon (Si) nanocrystal embedded Si oxide electroluminescence (EL) device with a mid-bandgap transition layer. The method provides a highly doped Si bottom electrode, and forms a mid-bandgap electrically insulating dielectric film overlying the electrode. A Si nanocrystal embedded SiOx film layer is formed overlying the mid-bandgap electrically insulating dielectric film, where X is less than 2, and a transparent top electrode overlies the Si nanocrystal embedded SiOx film layer. The bandgap of the mid-bandgap dielectric film is about half that of the bandgap of the Si nanocrystal embedded SiOx film. In one aspect, the Si nanocrystal embedded SiOx film has a bandgap (Eg) of about 10 electronvolts (eV) and mid-bandgap electrically insulating dielectric film has a bandgap of about 5 eV. By dividing the high-energy tunneling processes into two lower energy tunneling steps, potential damage due to high power hot electrons is reduced.

    摘要翻译： 提供了一种用于形成具有中间带隙过渡层的硅（Si）纳米晶体嵌入式Si氧化物电致发光（EL）器件的方法。 该方法提供高度掺杂的Si底部电极，并且形成覆盖电极的中带隙电绝缘膜。 在其中X小于2的中间带隙绝缘电介质膜上形成Si纳米晶体嵌入的SiOx膜层，并且透明顶部电极覆盖在Si纳米晶体嵌入的SiOx膜层上。 中间带隙电介质膜的带隙约为Si纳米晶体嵌入的SiOx膜的带隙的一半。 在一个方面，Si纳米晶体嵌入的SiO x膜具有约10电子伏特（eV）的带隙（Eg），并且中带隙绝缘电介质膜具有约5eV的带隙。 通过将高能隧道工艺分成两个较低能量的隧穿步骤，由于大功率热电子引起的潜在损害降低。

    Substituted azole acid derivatives useful as antidiabetic and antiobesity agents and method
    35.
    发明授权
    Substituted azole acid derivatives useful as antidiabetic and antiobesity agents and method 有权
    用作抗糖尿病和抗肥胖剂的取代唑类衍生物和方法

    公开(公告)号：US06967212B2

    公开(公告)日：2005-11-22

    申请号：US10294525

    申请日：2002-11-14

    申请人： Peter T. Cheng ,  Hao Zhang

    发明人： Peter T. Cheng ,  Hao Zhang

    IPC分类号： C07D413/12 ,  C07D413/14 ,  C07D417/14 ,  A61K31/421 ,  C07D263/32 ,  C07D413/10

    CPC分类号： C07D413/12 ,  C07D413/14 ,  C07D417/14

    摘要： Compounds are provided which have the structure wherein Q is C or N; R2a, R2b, R2c, X1 to X7, R1, R2, R3, R3a, R4, A, Y, m, and n are as defined herein, which compounds are useful as antidiabetic, hypolipidemic, and antiobesity agents. The present invention further provides a method for treating obesity and dyslipidemia in mammals including humans through simultaneous inhibition of peroxisome proliferator activated receptor-γ (PPARγ) and stimulation of peroxisome proliferator activated receptor-α (PPARα).

    摘要翻译： 提供具有其中Q为C或N的结构的化合物; R 2b，R 2b，R 2c，X 1至X 7， R 1，R 2，R 3，R 3，R 4，R 4， A，Y，m和n如本文所定义，该化合物可用作抗糖尿病，降血脂药和抗肥胖剂。 本发明还提供通过同时抑制过氧化物酶体增殖物激活受体-γ（PPARγ）和刺激过氧化物酶体增殖物激活受体-α（PPARα）来治疗哺乳动物包括人类的肥胖和血脂异常的方法。

    Shower wall hair catcher
    40.
    外观设计
    Shower wall hair catcher 有权

    公开(公告)号：USD997590S1

    公开(公告)日：2023-09-05

    申请号：US29869995

    申请日：2023-01-13

    申请人： Hao Zhang

    设计人： Hao Zhang

    摘要： FIG. 1 is a front and top perspective view of a shower wall hair catcher, showing my new design;
    FIG. 2 is a front elevation view thereof;
    FIG. 3 is a rear elevation view thereof;
    FIG. 4 is a left side elevation view thereof;
    FIG. 5 is a right side elevation view thereof;
    FIG. 6 is a top plan view thereof;
    FIG. 7 is a bottom plan view thereof; and,
    FIG. 8 is another perspective view thereof, shown in an alternative position.
    The broken lines in the figures illustrate portions of the shower wall hair catcher that form no part of the claimed design.