Resist lower layer film composition and patterning process using the same
    34.
    发明申请
    Resist lower layer film composition and patterning process using the same 有权
    抵抗较低层的膜组成和使用其的图案化工艺

    公开(公告)号:US20080227037A1

    公开(公告)日:2008-09-18

    申请号:US12071806

    申请日:2008-02-26

    IPC分类号: G03F7/26 G03F5/00

    CPC分类号: G03F7/091 G03F7/0046

    摘要: A resist lower layer film composition, wherein an etching speed is fast, thus an etching time period can be shortened to minimize a film thickness loss of a resist pattern and a deformation of the pattern during etching, therefore, a pattern can be transferred with high accuracy and an excellent pattern can be formed on a substrate is provided.The resist lower layer film composition comprising at least a polymer having a repeating unit represented by the following general formula (1).

    摘要翻译: 一种抗蚀剂下层膜组合物,其中蚀刻速度快,因此可以缩短蚀刻时间周期,以最小化抗蚀剂图案的膜厚度损失和蚀刻期间图案的变形,因此,图案可以高转印 可以在基板上形成精度和极好的图案。 所述抗蚀剂下层膜组合物至少含有具有下述通式(1)表示的重复单元的聚合物。