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8 条记录 (耗时 0.041 秒)

    SULFONIUM SALT-CONTAINING POLYMER, RESIST COMPOSITION, AND PATTERNING PROCESS
    4.
    发明申请
    SULFONIUM SALT-CONTAINING POLYMER, RESIST COMPOSITION, AND PATTERNING PROCESS 有权
    含硫酸钠聚合物，耐腐蚀组合物和图案处理

    公开(公告)号：US20090269696A1

    公开(公告)日：2009-10-29

    申请号：US12428933

    申请日：2009-04-23

    申请人： Youichi OHSAWA ,  Jun HATAKEYAMA ,  Seiichiro TACHIBANA ,  Takeshi KINSHO

    发明人： Youichi OHSAWA ,  Jun HATAKEYAMA ,  Seiichiro TACHIBANA ,  Takeshi KINSHO

    IPC分类号： G03F7/20 ,  C08F214/18 ,  G03F7/004

    CPC分类号： G03F7/0045 ,  C08F220/18 ,  C08F220/28 ,  C08F220/30 ,  C08F220/38 ,  G03F7/0392 ,  G03F7/0397 ,  G03F7/2041 ,  Y10S430/143 ,  Y10S430/167

    摘要： A polymer comprising recurring units having formulae (1), (2) and (3) is provided as well as a chemically amplified resist composition comprising the same. R1 is H, F, CH3 or CF3, Rf is H, F, CF3 or C2F5, A is an optionally fluorine or oxygen-substituted divalent organic group, R2, R3 and R4 are alkyl, alkenyl, oxoalkyl, aryl, aralkyl or aryloxoalkyl, or may form a ring with the sulfur atom, N=0-2, R8 is H or alkyl, B is a single bond or optionally oxygen-substituted divalent organic group, a=0-3, b=1-3, and X is an acid labile group. The polymer generates a strong sulfonic acid which provides for effective cleavage of acid labile groups in a chemically amplified resist composition.

    摘要翻译： 提供了包含具有式（1），（2）和（3）的重复单元的聚合物以及包含其的化学放大抗蚀剂组合物。 R 1是H，F，CH 3或CF 3，R f是H，F，CF 3或C 2 F 5，A是任选氟或氧取代的二价有机基团，R 2，R 3和R 4是烷基，烯基，氧代烷基，芳基，芳烷基或芳氧基烷基 或者可以与硫原子形成环，N = O-2，R 8是H或烷基，B是单键或任选的氧取代的二价有机基团，a = 0-3，b = 1-3，和 X是酸不稳定组。 该聚合物产生强的磺酸，其提供化学增强抗蚀剂组合物中酸不稳定基团的有效切割。

    Lactone-containing compound, polymer, resist composition, and patterning process
    5.
    发明申请
    Lactone-containing compound, polymer, resist composition, and patterning process 有权
    含内酯的化合物，聚合物，抗蚀剂组合物和图案化工艺

    公开(公告)号：US20080026331A1

    公开(公告)日：2008-01-31

    申请号：US11878759

    申请日：2007-07-26

    申请人： Koji HASEGAWA ,  Tsunehiro NISHI ,  Takeshi KINSHO ,  Seiichiro TACHIBANA

    发明人： Koji HASEGAWA ,  Tsunehiro NISHI ,  Takeshi KINSHO ,  Seiichiro TACHIBANA

    IPC分类号： C08F28/06 ,  C08F24/00 ,  G03C5/00

    CPC分类号： G03F7/0397 ,  C08F220/18 ,  C08F220/28 ,  G03F7/0046 ,  Y10S430/111

    摘要： Lactone-containing compounds having formula (1) are novel wherein R1 is H, F, methyl or trifluoromethyl, R2 and R3 are monovalent hydrocarbon groups, or R2 and R3 may together form an aliphatic hydrocarbon ring, R4 is H or CO2R5, R5 is a monovalent hydrocarbon group, W is CH2, O or S, and k1 is 0 or 1. They are useful as monomers to produce polymers which are transparent to radiation≦500 nm. Radiation-sensitive resist compositions comprising the polymers as base resin exhibit excellent properties including resolution, pattern edge roughness, pattern density dependency and exposure margin.

    摘要翻译： 含有式（1）的含内酯的化合物是新的，其中R 1是H，F，甲基或三氟甲基，R 2和R 3是 一价烃基或R 2和R 3可以一起形成脂族烃环，R 4是H或CO 2， R 5，R 5是一价烃基，W是CH 2，O或S，和k 1 它们可用作单体以产生对辐射<= 500nm透明的聚合物。 包含作为基础树脂的聚合物的辐射敏感性抗蚀剂组合物表现出优异的性能，包括分辨率，图案边缘粗糙度，图案密度依赖性和曝光余量。

    SULFONIUM SALT-CONTAINING POLYMER, RESIST COMPOSITION, AND PATTERNING PROCESS
    7.
    发明申请
    SULFONIUM SALT-CONTAINING POLYMER, RESIST COMPOSITION, AND PATTERNING PROCESS 有权
    含硫酸钠聚合物，耐腐蚀组合物和图案处理

    公开(公告)号：US20090233223A1

    公开(公告)日：2009-09-17

    申请号：US12404245

    申请日：2009-03-13

    申请人： Seiichiro TACHIBANA ,  Jun Hatakeyama ,  Youichi Ohsawa ,  Masaki Ohashi

    发明人： Seiichiro TACHIBANA ,  Jun Hatakeyama ,  Youichi Ohsawa ,  Masaki Ohashi

    IPC分类号： G03F7/20 ,  C08F214/18 ,  G03F7/004

    CPC分类号： G03F7/0045 ,  G03F7/0392 ,  G03F7/0397 ,  G03F7/2041 ,  Y10S430/111

    摘要： A polymer comprising recurring units of a sulfonium salt represented by formula (1) is provided as well as a chemically amplified resist composition comprising the same. R1 is H, F, methyl or trifluoromethyl, R2 to R4 are C1-C10 alkyl or alkoxy, R5 is C1-C30 alkyl or C6-C14 aryl, k, m and n are 0 to 3. The recurring units generate a sulfonic acid upon exposure to high-energy radiation so as to facilitate effective scission of acid labile groups in the resist composition. The resist composition exhibits excellent resolution and a pattern finish with minimal LER.

    摘要翻译： 提供了包含由式（1）表示的锍盐的重复单元的聚合物以及包含该聚合物的化学放大抗蚀剂组合物。 R 1是H，F，甲基或三氟甲基，R 2至R 4是C 1 -C 10烷基或烷氧基，R 5是C 1 -C 30烷基或C 6 -C 14芳基，k，m和n是0至3.重复单元产生磺酸 暴露于高能量辐射下，以促进抗蚀剂组合物中酸不稳定基团的有效断裂。 抗蚀剂组合物以最小的LER显示出优异的分辨率和图案光洁度。

    POSITIVE RESIST COMPOSITION AND PATTERNING PROCESS
    8.
    发明申请
    POSITIVE RESIST COMPOSITION AND PATTERNING PROCESS 审中-公开
    积极的组合和绘图过程

    公开(公告)号：US20130065179A1

    公开(公告)日：2013-03-14

    申请号：US13604258

    申请日：2012-09-05

    申请人： Kazunori MAEDA ,  Ryosuke TANIGUCHI ,  Seiichiro TACHIBANA

    发明人： Kazunori MAEDA ,  Ryosuke TANIGUCHI ,  Seiichiro TACHIBANA

    IPC分类号： G03F7/004 ,  G03F7/20

    CPC分类号： G03F7/0397 ,  G03F7/0045 ,  G03F7/0046 ,  G03F7/2041

    摘要： There is disclosed a positive resist composition comprising (A) a specific resin (B) a photo acid generator, (C) a basic compound, and (D) a solvent. There can be a positive resist composition having, in a photolithography using a high energy beam such as an ArF excimer laser beam as a light source, an excellent resolution, especially excellent depth of focus (DOF) characteristics with an excellent pattern profile, and in addition, in formation of a contact hole pattern, giving a pattern having excellent circularity and high rectangularity; and a patterning process using this positive resist composition.

    摘要翻译： 公开了一种正型抗蚀剂组合物，其包含（A）特定树脂（B）光酸产生剂，（C）碱性化合物和（D）溶剂。 可以存在正光致抗蚀剂组合物，其在使用诸如ArF准分子激光束的高能束作为光源的光刻中具有优异的分辨率，特别优异的聚焦深度（DOF）特性，具有优异的图案轮廓，并且在 此外，形成接触孔图形，赋予圆形性和高矩形性优异的图案; 以及使用该正性抗蚀剂组合物的图案化工艺。