公开(公告)号：US20050106480A1

公开(公告)日：2005-05-19

申请号：US10985902

申请日：2004-11-12

申请人： Kyoichi Suwa

发明人： Kyoichi Suwa

IPC分类号： H01L21/027 ,  G03F1/00 ,  G03F1/38 ,  G03F1/44 ,  G03F1/84 ,  G03F7/20 ,  H01L21/66 ,  H01L23/544 ,  G03F9/00 ,  G03C5/00 ,  G06K9/00

CPC分类号： G03F1/44 ,  G03F1/84 ,  G03F7/70625 ,  H01L22/34 ,  H01L2924/0002 ,  H01L2924/00

摘要： An exposure method includes an exposure step and a measurement step. The exposure step transfers a circuit pattern of a mask onto a photosensitive substrate via an optical system. The mask includes a circuit pattern and an inspection pattern to be used for a measurement of a line width of the pattern transferred to the substrate. The measurement step measures, prior to the exposure step, using the inspection pattern which is formed on the mask to be used in the exposure step, a line width of the pattern to be transferred to the substrate.

摘要翻译： 曝光方法包括曝光步骤和测量步骤。 曝光步骤通过光学系统将掩模的电路图案转印到感光基板上。 掩模包括用于测量转印到基板的图案的线宽的电路图案和检查图案。 测量步骤在曝光步骤之前，使用在曝光步骤中使用的掩模上形成的检查图案，将要传送到基板的图案的线宽度。

公开(公告)号：US6094256A

公开(公告)日：2000-07-25

申请号：US163049

申请日：1998-09-29

申请人： Ilya Grodnensky ,  Kyoichi Suwa ,  Kazuo Ushida ,  Eric R. Johnson

发明人： Ilya Grodnensky ,  Kyoichi Suwa ,  Kazuo Ushida ,  Eric R. Johnson

IPC分类号： G03B27/72 ,  G03C5/00 ,  G03F7/20 ,  G03B27/32 ,  G03B27/42

CPC分类号： G03F7/70625 ,  G03F7/70591 ,  G03F7/706 ,  G03F7/70633 ,  G03F7/70683

摘要： A method for forming a critical dimension test mark, and the use of the mark to characterize and monitor imaging performance is provided. Methods in accordance with the present invention encompass an exposure of an essentially standard critical dimension bar at each of two overlapping orientations that are rotated about an axis with respect to each other. The overlapped portion forming a critical dimension test mark that is useful for enabling low cost, rapid determination of sub-micron critical dimensions for characterizing exposure tool imaging performance and in-process performance monitoring using optical measurement systems.

摘要翻译： 提供了形成临界尺寸测试标记的方法，以及使用该标记来表征和监视成像性能。 根据本发明的方法包括在相对于彼此绕轴线旋转的两个重叠取向中的每一个处暴露基本上标准的临界尺寸条。 重叠部分形成临界尺寸测试标记，其有助于实现低成本，快速确定亚微米临界尺寸，以表征曝光工具成像性能和使用光学测量系统的在过程中性能监控。

公开(公告)号：US5870197A

公开(公告)日：1999-02-09

申请号：US738962

申请日：1996-10-24

申请人： Michael R. Sogard ,  John K. Eaton ,  Kyoichi Suwa ,  Naoyuki Kobayashi

发明人： Michael R. Sogard ,  John K. Eaton ,  Kyoichi Suwa ,  Naoyuki Kobayashi

IPC分类号： H01L21/027 ,  G03F7/20 ,  G03F7/207 ,  G01B9/02

CPC分类号： G03F7/70875 ,  G03F7/70716 ,  G03F7/70866

摘要： A local air duct directs a temperature-controlled stream of air across two perpendicular sets of interferometer beams which are used to measure the two dimension (X-Y) position of a precision stage in e.g. an optical lithography stepper or step and scan system, or in any other precision coordinate measuring machine. By thereby providing an additional single air flow which is azimuthally directed across both the X and Y direction interferometer beams, the precision of the interferometric measurement is maximized. In addition, a second flow of air is directed downwards from the local air duct, thus providing sufficient air circulation onto the stage when the stage is directly beneath the local duct, even though in that location the stage is otherwise blocked from receiving the main air flow through the chamber.

摘要翻译： 局部空气管道引导温度控制的空气流穿过两个垂直的干涉仪光束组，这些干涉仪光束用于测量例如精密级的二维（X-Y）位置。 光刻步进或步进扫描系统，或任何其他精密坐标测量机。 通过这样提供方位角定向穿过X和Y方向干涉仪光束的另外的单一空气流，干涉测量的精度最大化。 此外，空气的第二流动从局部空气管道向下引导，从而当台架直接位于局部管道下方时，能够在舞台上提供足够的空气循环，即使在该位置，台架被阻挡以免接收主空气 流过腔室。

公开(公告)号：US5825043A

公开(公告)日：1998-10-20

申请号：US727695

申请日：1996-10-07

申请人： Kyoichi Suwa

发明人： Kyoichi Suwa

IPC分类号： G03F7/20 ,  G03F7/207 ,  G03F9/00 ,  G03F9/02 ,  H01L21/027 ,  G01J1/20 ,  G01N21/86

CPC分类号： G03F7/70641 ,  G03F7/70275 ,  G03F7/70341 ,  G03F7/70358 ,  G03F7/70716 ,  G03F7/70808 ,  G03F7/70866 ,  G03F7/70875 ,  G03F7/70891 ,  G03F9/70 ,  G03F9/7026

摘要： Improvements in a focusing apparatus having an objective optical system for optically manufacturing a workpiece, forming a desired pattern on a surface of a workpiece or inspecting a pattern on a workpiece and used to adjust the state of focusing between the surface of the workpiece and the objective optical system. The focusing apparatus has a first detection system having a detection area at a first position located outside the field of the objective optical system, a second detection system having a detection area at a second position located outside the field of the objective optical system and spaced apart from the first position, and a third detection system having a detection area at a third position located outside the field of the objective optical system and spaced apart from each of the first and second positions. A calculator calculates a deviation between a first focus position and a target focus position and temporarily stores a second focus position at the time of detection made by the first detection system. A controller controls focusing on the surface of the workpiece on the basis of the calculated deviation, the stored second focus position and a third focus position when the area on the workpiece corresponding to the detection area of the first detection system is positioned in the field of the objective optical system by relative movement of the workpiece and the objective optical system.

摘要翻译： 具有用于光学制造工件的物镜光学系统，在工件表面上形成所需图案或检查工件上的图案并用于调节工件表面与目标之间的聚焦状态的聚焦装置的改进 光学系统。 聚焦装置具有第一检测系统，其具有位于物镜光学系统的场外的第一位置处的检测区域;第二检测系统，其具有位于物镜光学系统的场外的间隔开的第二位置处的检测区域 以及第三检测系统，其具有位于物镜光学系统的场外的第三位置处的检测区域，并且与第一和第二位置中的每一个间隔开。 计算器计算第一对焦位置和目标对焦位置之间的偏差，并且临时存储由第一检测系统进行的检测时的第二聚焦位置。 控制器基于计算出的偏差，存储的第二聚焦位置和第三对焦位置来控制对工件表面的对焦，当与第一检测系统的检测区域对应的工件上的区域位于 物镜光学系统通过相对运动的工件和物镜光学系统。

公开(公告)号：US5698069A

公开(公告)日：1997-12-16

申请号：US764664

申请日：1996-12-11

申请人： Arun A. Aiyer ,  Kyoichi Suwa

发明人： Arun A. Aiyer ,  Kyoichi Suwa

IPC分类号： G03F1/08 ,  G01N21/88 ,  G01N21/95 ,  H01L21/027 ,  H01L21/683 ,  H01L21/00

CPC分类号： G01N21/94 ,  G01N21/8806 ,  G01N21/9501

摘要： A method of detecting particles on a wafer support surface comprising positioning a wafer in a first position on the surface with the wafer in the first position, generating a first pattern on the wafer, and moving the wafer. Then, after moving the wafer, generating a second pattern on the wafer to generate a moire pattern by the interaction of the second pattern with the first pattern. The moire pattern is inspected to identify any visual distortion in the moire pattern due to physical distortion of the wafer caused by a particle on the support surface during the generation of the first pattern. The patterns may be ruled parallel lines, and the second pattern may be moved during inspection to shift the moire pattern to reveal distortions over a wide area.

摘要翻译： 一种检测晶片支撑表面上的颗粒的方法，包括将晶片定位在表面上的第一位置，晶片处于第一位置，在晶片上产生第一图案并移动晶片。 然后，在移动晶片之后，通过第二图案与第一图案的相互作用在晶片上产生第二图案以产生莫尔+ E，acu + EE图案。 在产生第一图案期间，由于由支撑表面上的颗粒引起的晶片的物理失真，检查莫尔+ E，acu e + EE图案以识别moir + E，acu e + EE图案中的任何视觉失真 。 图案可以是划线的平行线，并且可以在检查期间移动第二图案以使莫尔+ E，acu e + EE图案移动以显示在广泛区域上的扭曲。

公开(公告)号：US4965630A

公开(公告)日：1990-10-23

申请号：US451166

申请日：1989-12-15

申请人： Kinya Kato ,  Kazuo Ushida ,  Toshiyuki Namikawa ,  Koichi Matsumoto ,  Kyoichi Suwa ,  Koichi Ohno

发明人： Kinya Kato ,  Kazuo Ushida ,  Toshiyuki Namikawa ,  Koichi Matsumoto ,  Kyoichi Suwa ,  Koichi Ohno

IPC分类号： G03F7/20 ,  H01L21/027 ,  H01L21/30

CPC分类号： G03F7/70241

摘要： The present invention provides a projection exposure apparatus comprising: a reticle stage; an illumination optical system for illuminating a reticle on the reticle stage; a stage on which a substrate is supported; and a projection optical system having a predetermined numerical aperture to project a pattern formed on the reticle and illuminated by the illumination optical system onto the substrate, and in which a longitudinal spherial aberration thereof regarding the focusing of the pattern formed on the reticle onto the substrate are excessively corrected.

摘要翻译： 本发明提供一种投影曝光装置，包括：标线片台; 照明光学系统，用于照亮标线片台上的掩模版; 支撑衬底的阶段; 以及具有预定数值孔径的投影光学系统，以将形成在标线上的图案投影并由照明光学系统照射到基板上，并且其中将关于在掩模版上形成的图案聚焦到基板上的纵向球面像差 被过度纠正。

公开(公告)号：US4741622A

公开(公告)日：1988-05-03

申请号：US835526

申请日：1986-03-03

申请人： Kyoichi Suwa ,  Masaichi Murakami

发明人： Kyoichi Suwa ,  Masaichi Murakami

IPC分类号： H01L21/30 ,  G03F7/20 ,  G03F9/00 ,  G06F3/03 ,  G06F3/033 ,  H01L21/027 ,  H01L21/67 ,  H01L21/68 ,  G01B11/27

CPC分类号： G03F9/70 ,  G03F7/70066

摘要： A method of detecting a registration diversion between a mask and a wafer prior to a main exposure. This method detects relative diversions between marks on the wafer and latent images of marks on the mask formed on a photosensitive layer of the wafer. The latent images of the marks on the mask are preliminarily formed on the photosensitive layer of the wafer by an exposure energy beam prior to the main exposure.

摘要翻译： 一种在主曝光之前检测掩模和晶片之间的配准转移的方法。 该方法检测晶片上的标记之间的相对转移以及形成在晶片的感光层上的掩模上的标记的潜像。 通过在主曝光之前的曝光能量束，在晶片的感光层上预先形成掩模上的标记的潜像。

公开(公告)号：US4734746A

公开(公告)日：1988-03-29

申请号：US51236

申请日：1987-05-12

申请人： Kazuo Ushida ,  Satoru Anzai ,  Kazuaki Suzuki ,  Toshio Matsuura ,  Kyoichi Suwa ,  Koichi Matsumoto

发明人： Kazuo Ushida ,  Satoru Anzai ,  Kazuaki Suzuki ,  Toshio Matsuura ,  Kyoichi Suwa ,  Koichi Matsumoto

IPC分类号： G03F7/20 ,  G03B27/32 ,  G03B27/42

CPC分类号： G03F7/70066 ,  G03F7/2022 ,  G03F7/70241 ,  G03F7/70458

摘要： An exposure method for photolithography comprises the steps of forming a pattern on a substrate by the use of a first exposure apparatus including a first imaging optical system having a reduction magnification 1/.beta.1 and an image circle of a diameter .phi.1, and forming a second pattern on the substrate on which the first pattern has been formed, by the use of a second exposure apparatus including a second imaging optical system having a reduction magnification 1/.beta.2 different from the reduction magnification 1/.beta.1 and an image circle of a diameter .phi.2, wherein when N is an integer, the conditions that .beta.1.times..phi.1=.beta.2.times..phi.2 and .phi.1=N.times..phi.2 are satisfied.

摘要翻译： 用于光刻的曝光方法包括以下步骤：通过使用包括具有缩小倍率1 /β1的第一成像光学系统和直径φ1的图像圆的第一曝光装置在基板上形成图案，并且形成 通过使用包括具有不同于缩小倍率1 /β1的缩小倍率1 /β2的第二成像光学系统的第二曝光装置和形成第一图案的图像圆的第二图案， 直径phi 2，其中当N是整数时，满足β1 phi 1 =β2 ph 2和ph 1 = N x ph 2的条件。

公开(公告)号：US4657379A

公开(公告)日：1987-04-14

申请号：US729970

申请日：1985-05-03

申请人： Kyoichi Suwa

发明人： Kyoichi Suwa

IPC分类号： H01L21/30 ,  G03F1/00 ,  G03F1/38 ,  G03F1/42 ,  G03F7/20 ,  G03F9/00 ,  H01L21/027 ,  G03B27/42

CPC分类号： G03F7/708 ,  G03F9/70

摘要： A photomask includes a pattern region including a predetermined original image pattern, a pair of mark regions which respectively include alignment marks located on a line crossing the pattern region and which are located at two sides of the pattern region, and a pair of light-shielding regions each of which has at least the same width as that of a corresponding one of the mark regions along a direction parallel to the line.An exposure apparatus for sequentially exposing a plurality of regions on a photosensitive substrate by using a projection image on the photomask includes means for moving the photosensitive substrate and the photomask relative to each other such that images of marks for a current projection image are projected on a portion of a nonexposed region of a previous projection image, the portion being located next to a previous mark latent image and the nonexposed region being located between the latent image of the previous original image pattern and the latent image of the previous mark.

摘要翻译： 光掩模包括包括预定原始图像图案的图案区域，分别包括位于与图案区域交叉的并位于图案区域的两侧的线上的对准标记的一对标记区域和一对遮光 每个区域具有至少与沿着平行于该线的方向的相应一个标记区域的宽度相同的宽度。 通过使用光掩模上的投影图像来顺序曝光感光基板上的多个区域的曝光装置包括用于使感光基板和光掩模相对于彼此移动的装置，使得当前投影图像的标记图像投影在 前一投影图像的未曝光区域的部分，该部分位于先前标记潜像旁边，并且未曝光区域位于先前原始图像图案的潜像和先前标记的潜像之间。

公开(公告)号：US4390279A

公开(公告)日：1983-06-28

申请号：US166794

申请日：1980-07-08

申请人： Kyoichi Suwa

发明人： Kyoichi Suwa

IPC分类号： G03F9/00 ,  G01B11/00

CPC分类号： G03F9/7076 ,  G03F9/7049

摘要： An alignment device in an IC projection exposure apparatus includes a projection lens system for viewing to a wafer surface having a reference mark comprising a periodic pattern structure having a predetermined period in one direction and a mask surface having a reference mark to be position-adjusted with respect to the reference mark of the wafer, the projection lens system being capable of forming an image of an observation light source on the wafer surface through the mask surface, and an observation optical system for detecting the reflected light from the wafer surface passed through the projection lens system. The device further includes means for selecting a particular component of the diffracted light from the wafer surface formed by the pattern of the reference mark on the wafer, and for directing the particular component to the observation optical system. Said means includes a light-intercepting member provided near the pupil of the observation optical system and formed with a light-transmitting opening extending in a band-like form in a direction orthogonal to the direction of the period of the reference mark on the wafer surface.

摘要翻译： IC投影曝光装置中的对准装置包括：投影透镜系统，用于观看具有参考标记的晶片表面，所述参考标记包括在一个方向上具有预定周期的周期性图案结构，以及掩模表面具有要被位置调整的参考标记 相对于晶片的参考标记，投影透镜系统能够通过掩模表面在晶片表面上形成观察光源的图像;以及观察光学系统，用于检测通过该晶片表面的晶片表面的反射光 投影镜头系统。 该装置还包括用于从由晶片上的参考标记的图案形成的晶片表面选择衍射光的特定分量的装置，并用于将特定部件引导到观察光学系统。 所述装置包括在观察光学系统的瞳孔附近设置的遮光部件，并且形成有在与晶片表面上的基准标记的周期方向正交的方向上以带状形式延伸的透光开口 。