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    CATHODE ACTIVE MATERIAL AND PROCESS FOR PRODUCING THE SAME
    31.
    发明申请
    CATHODE ACTIVE MATERIAL AND PROCESS FOR PRODUCING THE SAME 审中-公开
    阴极活性材料及其生产方法

    公开(公告)号：US20090278082A1

    公开(公告)日：2009-11-12

    申请号：US11910307

    申请日：2006-03-31

    申请人： Hitoshi Takebayashi ,  Makoto Hongu ,  Tetsuro Tojo ,  Shinji Saito ,  Takehiko Sawai ,  Katsuyuki Negishi ,  Masahiro Kikuchi

    发明人： Hitoshi Takebayashi ,  Makoto Hongu ,  Tetsuro Tojo ,  Shinji Saito ,  Takehiko Sawai ,  Katsuyuki Negishi ,  Masahiro Kikuchi

    IPC分类号： H01M4/58 ,  H01M4/88

    CPC分类号： H01M4/582 ,  C01G51/42 ,  C01G53/50 ,  C01P2002/52 ,  C01P2002/54 ,  C01P2004/61 ,  C01P2004/62 ,  C01P2006/40 ,  H01M4/02 ,  H01M4/131 ,  H01M2004/021 ,  H01M2004/028

    摘要： It is an object of the present invention to provide a cathode active material capable of reducing degradation in an operation voltage and capacity as compared conventionally when used for a lithium ion secondary battery, and a method for manufacturing the same. The cathode active material contains a composite oxide of lithium and a transition metal (s), wherein a reduction loss of TLC in the composite oxide is 20 to 60%. Also, the composite oxide has a particle diameter of 0.5 to 100 μm, and is preferably fluorinated. The method for manufacturing the cathode active material includes the step of fluorinating the cathode active material. The composite oxide has a particle diameter of 0.5 to 100 μm. The fluorinating step is to fluorinate the composite oxide in a reaction vessel under conditions where fluorine gas partial pressure is 1 to 200 kPa, a reaction time is 10 minutes to 10 days, and a reaction temperature is −10 to 200° C.

    摘要翻译： 本发明的一个目的是提供一种阴极活性材料及其制造方法，该阴极活性材料能够降低与常规用于锂离子二次电池时相比的操作电压和容量的降低。 正极活性物质含有锂和过渡金属的复合氧化物，复合氧化物中的TLC的还原损失为20〜60％。 此外，复合氧化物的粒径为0.5〜100μm，优选为氟化。 用于制造正极活性物质的方法包括氟化正极活性物质的步骤。 复合氧化物的粒径为0.5〜100μm。 氟化步骤是在氟气分压为1〜200kPa，反应时间为10分钟〜10天，反应温度为-10〜200℃的条件下，在反应容器中氟化复合氧化物。

    LITHIUM ION RECHARGEABLE BATTERY
    32.
    发明申请
    LITHIUM ION RECHARGEABLE BATTERY 有权
    锂离子充电电池

    公开(公告)号：US20090239145A1

    公开(公告)日：2009-09-24

    申请号：US12092485

    申请日：2006-10-06

    申请人： Hitoshi Takebayashi ,  Makoto Hongu ,  Tetsuro Tojo ,  Shinji Saito ,  Takehiko Sawai ,  Katsuyuki Negishi ,  Masahiro Kikuchi

    发明人： Hitoshi Takebayashi ,  Makoto Hongu ,  Tetsuro Tojo ,  Shinji Saito ,  Takehiko Sawai ,  Katsuyuki Negishi ,  Masahiro Kikuchi

    IPC分类号： H01M10/26

    CPC分类号： H01M10/0525 ,  H01M2/16 ,  H01M4/131 ,  H01M4/1315 ,  H01M4/1391 ,  H01M4/505 ,  H01M4/525 ,  H01M4/625 ,  H01M10/058

    摘要： A high power lithium-ion secondary battery having an increased capacity and capable of maintaining high discharge voltage and repeating charging/discharging high current. A lithium-ion secondary battery having; an electrode group formed by laminating or winding a negative electrode layer and a positive electrode layer so as to interpose a separator made of synthetic resin, the negative electrode layer containing a material capable of intercalating/deintercalating lithium-ion, and a positive electrode layer including a lithium-containing metallic oxide; and a non-aqueous electrolyte containing lithium salt, where the electrode group is immersed. The positive electrode material unit contains a fluorinated lithium-containing metallic oxide as a main material, and the separator possesses a hydrophilic group. Further, the positive electrode material preferably contains a main material including LiNixCoyMnzO2, where 0.4≦x≦1, 0≦y≦0.2, 0≦z 0.2, x+y+z=1.

    摘要翻译： 一种高功率锂离子二次电池，其具有增加的容量并且能够保持高放电电压并且重复充电/放电高电流。 一种锂离子二次电池，具有： 通过层叠或卷绕负极层和正极层形成的电极组，以便插入由合成树脂制成的隔板，所述负极层含有能够嵌入/脱嵌锂离子的材料，以及包括 含锂金属氧化物; 和含有锂盐的非水电解质，浸渍电极组。 正极材料单元包含含氟的含锂金属氧化物作为主要材料，隔膜具有亲水性基团。 此外，正极材料优选含有包含LiNixCoyMnzO 2的主要材料，其中0.4≤x≤1,0<= y <= 0.2,0 <= z 0.2，x + y + z = 1。

    Silicon Carbide Single Crystal and Method of Etching the Same
    33.
    发明申请
    Silicon Carbide Single Crystal and Method of Etching the Same 审中-公开
    碳化硅单晶及其蚀刻方法

    公开(公告)号：US20080050301A1

    公开(公告)日：2008-02-28

    申请号：US11631851

    申请日：2005-07-06

    申请人： Akimasa Tasaka ,  Tetsuro Tojo ,  Minoru Inaba ,  Atsuhisa Mimoto ,  Masamichi Tanaka ,  Kaori Shima

    发明人： Akimasa Tasaka ,  Tetsuro Tojo ,  Minoru Inaba ,  Atsuhisa Mimoto ,  Masamichi Tanaka ,  Kaori Shima

    IPC分类号： B32B9/04 ,  C01B31/36 ,  C23F1/00

    CPC分类号： H01L21/0445 ,  C30B29/36 ,  C30B33/08

    摘要： Single-crystal silicon carbide is obtained, which finds a wide variety of applications including semiconductors, and an etching method for single-crystal silicon carbide is provided, by which nitrogen trifluoride plasma is used in single-crystal silicon carbide to obtain a smooth surface. In order to obtain single-crystal silicon carbide having the smoothness (surface roughness) within 150 nm and the material, nitrogen trifluoride-containing gas is subjected to plasma excitation to obtain single-crystal silicon carbide with a smooth surface. It is preferable that the pressure of nitrogen trifluoride gas is in the range of 0.5 to 10 Pa. It is also preferable that the flow rate of the nitrogen trifluoride gas is in the range of 5 to 15 sccm.

    摘要翻译： 得到单晶碳化硅，其具有半导体的广泛应用，提供了单晶碳化硅的蚀刻方法，通过该方法，在单晶碳化硅中使用三氟化氮等离子体以获得光滑的表面。 为了获得具有150nm以内的平滑度（表面粗糙度）的单晶碳化硅和材料，对含三氟化氮的气体进行等离子体激发，得到具有光滑表面的单晶碳化硅。 优选三氟化氮气体的压力为0.5〜10Pa的范围，优选三氟化氮气体的流量为5〜15sccm的范围。

    Purification method for carbon material containing carbon nanotubes, carbon material produced by the same method, and resin molding, fiber, heat sink, slider, material for field electron emission source, conduction aid for electrode, catalyst support
    39.
    发明授权
    Purification method for carbon material containing carbon nanotubes, carbon material produced by the same method, and resin molding, fiber, heat sink, slider, material for field electron emission source, conduction aid for electrode, catalyst support 失效
    含有碳纳米管的碳材料的纯化方法，通过相同方法生产的碳材料，以及树脂成型，纤维，散热片，滑块，场电子发射源材料，电极导电助剂，催化剂载体

    公开(公告)号：US08628748B2

    公开(公告)日：2014-01-14

    申请号：US12531283

    申请日：2008-03-07

    申请人： Yuji Takimoto ,  Naoto Ohta ,  Tetsuro Tojo

    发明人： Yuji Takimoto ,  Naoto Ohta ,  Tetsuro Tojo

    IPC分类号： D01F9/12 ,  C01B31/02

    CPC分类号： B01J21/185 ,  B01J23/83 ,  B82Y30/00 ,  B82Y40/00 ,  C01B32/17 ,  C01B2202/06 ,  H01J9/025 ,  H01J2201/30469

    摘要： A purification method for a carbon material containing carbon nanotubes is provided, which satisfies the following requirements: The method should prevent carbon nanotubes from being damaged, broken or flocculated; the method should be capable of removing the catalyst metal and carbon components other than the carbon nanotubes; and the method should be applicable to not only multi-walled carbon nanotubes but also single-walled carbon nanotubes which will undergo significant structural changes when heated to 1400° C. or higher temperatures. The method is characterized by including a carbon material preparation process for preparing a carbon material containing carbon nanotubes by an arc discharge method, using an anode made of a material containing at least carbon and a catalyst metal; and a halogen treatment process for bringing the carbon material into contact with a gas containing a halogen and/or halogen compound.

    摘要翻译： 提供了一种含有碳纳米管的碳材料的净化方法，该方法满足以下要求：该方法应防止碳纳米管受损，破裂或絮凝; 该方法应能除去碳纳米管以外的催化剂金属和碳成分; 该方法不仅适用于多壁碳纳米管，而且还适用于单层碳纳米管，当加热至1400℃或更高温度时，其将经历显着的结构变化。 该方法的特征在于包括通过电弧放电法制备含有碳纳米管的碳材料的碳材料制备方法，使用由至少含有碳和催化剂金属的材料制成的阳极; 以及使碳材料与含有卤素和/或卤素化合物的气体接触的卤素处理方法。

    Graphite Member for Beam-Line Internal Member of Ion Implantation Apparatus
    40.
    发明申请
    Graphite Member for Beam-Line Internal Member of Ion Implantation Apparatus 有权
    离子植入装置的束线内部成员的石墨构件

    公开(公告)号：US20090181527A1

    公开(公告)日：2009-07-16

    申请号：US12084206

    申请日：2006-10-12

    申请人： Kiyoshi Saito ,  Fumiaki Yokoyama ,  Hitoshi Suzuki ,  Atsuko Ando ,  Tetsuro Tojo ,  Seiji Shinohara

    发明人： Kiyoshi Saito ,  Fumiaki Yokoyama ,  Hitoshi Suzuki ,  Atsuko Ando ,  Tetsuro Tojo ,  Seiji Shinohara

    IPC分类号： H01L21/00 ,  H01J37/08 ,  H01J27/00

    CPC分类号： H01J37/3171 ,  C04B35/522 ,  C04B35/532 ,  C04B2235/5436 ,  C04B2235/656 ,  C04B2235/77 ,  H01J37/16 ,  H01J2237/0213 ,  H01J2237/022 ,  H01J2237/31705

    摘要： The problem of the present invention is to provide, in high current-low energy type ion implantation apparatuses, a graphite member for a beam line inner member of an ion implantation apparatus, which graphite member can markedly reduce particles incorporated in a wafer surface. This problem can be solved by the graphite member of the present invention, which is a graphite member for a beam line inner member of an ion implantation apparatus, which member having a bulk density of not less than 1.80 Mg/m3 and an electric resistivity of not more than 9.5 μΩ·m. Preferably, the R value obtained by dividing D band intensity at 1370 cm−1 by G band intensity at 1570 cm−1 in the Raman spectrum of a spontaneous fracture surface of the graphite member is not more than 0.20.

    摘要翻译： 本发明的问题在于，在高电流 - 低能量型离子注入装置中，提供一种用于离子注入装置的束线内部构件的石墨构件，该石墨构件可以显着地减少结合在晶片表面中的颗粒。 该问题可以通过本发明的石墨构件来解决，该石墨构件是用于离子注入装置的束线内部构件的石墨构件，其堆积密度不小于1.80Mg / m 3，并且电阻率 不超过9.5亩。 优选地，在石墨构件的自发断裂面的拉曼光谱中，将1370cm -1处的D带强度除以1570cm -1处的G带强度获得的R值不大于0.20。