公开(公告)号：US11963299B2

公开(公告)日：2024-04-16

申请号：US17726354

申请日：2022-04-21

Applicant: Rambus Inc.

Inventor： Frederick A. Ware ,  Suresh Rajan

IPC: G11C7/00 ,  G06F1/18 ,  G06F13/16 ,  G06F13/40 ,  G06F15/78 ,  G11C5/04 ,  G11C5/06 ,  G11C7/10 ,  G11C11/408 ,  G11C11/4093 ,  H05K1/11 ,  H05K1/18

CPC classification number: H05K1/11 ,  G06F1/184 ,  G06F13/1694 ,  G06F13/4068 ,  G06F15/7803 ,  G11C5/04 ,  G11C5/06 ,  G11C7/10 ,  G11C11/4082 ,  G11C11/4093 ,  H05K1/181 ,  H05K2201/10159 ,  H05K2201/10189

Abstract: The embodiments described herein describe technologies for memory systems. One implementation of a memory system includes a motherboard substrate with multiple module sockets, at least one of which is populated with a memory module. A first set of data lines is disposed on the motherboard substrate and coupled to the module sockets. The first set of data lines includes a first subset of point-to-point data lines coupled between a memory controller and a first socket and a second subset of point-to-point data lines coupled between the memory controller and a second socket. A second set of data lines is disposed on the motherboard substrate and coupled between the first socket and the second socket. The first and second sets of data lines can make up a memory channel.

公开(公告)号：US11960418B2

公开(公告)日：2024-04-16

申请号：US17965684

申请日：2022-10-13

Applicant: Rambus Inc.

Inventor： Frederick A. Ware ,  Amir Amirkhany ,  Suresh Rajan ,  Mohammad Hekmat ,  Dinesh Patil

IPC: G11C7/10 ,  G06F13/16 ,  G06F13/40 ,  G11C5/02 ,  G11C7/22 ,  G11C8/18 ,  G11C11/4076 ,  G11C11/4093 ,  G11C11/4096 ,  G11C11/419 ,  G11C29/02

CPC classification number: G06F13/1673 ,  G06F13/4068 ,  G11C5/02 ,  G11C7/10 ,  G11C7/1012 ,  G11C7/1021 ,  G11C7/106 ,  G11C7/1066 ,  G11C7/1072 ,  G11C7/1087 ,  G11C7/1093 ,  G11C7/222 ,  G11C8/18 ,  G11C11/4076 ,  G11C11/4093 ,  G11C11/4096 ,  G11C11/419 ,  G11C29/022 ,  G11C29/023 ,  G11C29/028

Abstract: A semiconductor memory system includes a first semiconductor memory die and a second semiconductor memory die. The first semiconductor memory die includes a primary data interface to receive an input data stream during write operations and to deserialize the input data stream into a first plurality of data streams, and also includes a secondary data interface, coupled to the primary data interface, to transmit the first plurality of data streams. The second semiconductor memory die includes a secondary data interface, coupled to the secondary data interface of the first semiconductor memory die, to receive the first plurality of data streams.

公开(公告)号：US20230377668A1

公开(公告)日：2023-11-23

申请号：US18138661

申请日：2023-04-24

Applicant: Rambus Inc.

Inventor： Ely Tsern ,  Frederick A Ware ,  Suresh Rajan ,  Thomas Vogelsang

IPC: G11C29/24 ,  G06F11/10 ,  G11C29/50 ,  G11C29/44 ,  G11C5/04

CPC classification number: G11C29/24 ,  G06F11/1008 ,  G11C29/50016 ,  G11C2029/4402 ,  G11C2211/4061 ,  G11C5/04

Abstract: A method of operation in an integrated circuit (IC) memory device is disclosed. The method includes refreshing a first group of storage rows in the IC memory device at a first refresh rate. A retention time for each of the rows is tested. The testing for a given row under test includes refreshing at a second refresh rate that is slower than the first refresh rate. The testing is interruptible based on an access request for data stored in the given row under test.

公开(公告)号：US11568919B2

公开(公告)日：2023-01-31

申请号：US17334170

申请日：2021-05-28

Applicant: Rambus Inc.

Inventor： Frederick A. Ware ,  Suresh Rajan ,  Scott C. Best

IPC: G11C11/408 ,  G11C5/04 ,  G11C11/4093 ,  G06F12/06 ,  G06F13/16 ,  G11C7/10 ,  G11C7/22 ,  G11C11/4076

Abstract: The embodiments described herein describe technologies for using the memory modules in different modes of operation, such as in a standard multi-drop mode or as in a dynamic point-to-point (DPP) mode (also referred to herein as an enhanced mode). The memory modules can also be inserted in the sockets of the memory system in different configurations.

公开(公告)号：US11487679B2

公开(公告)日：2022-11-01

申请号：US17081909

申请日：2020-10-27

Applicant: Rambus Inc.

Inventor： Frederick A. Ware ,  Amir Amirkhany ,  Suresh Rajan ,  Mohammad Hekmat ,  Dinesh Patil

IPC: G06F13/14 ,  G06F13/16 ,  G11C7/10 ,  G11C8/18 ,  G11C11/419 ,  G11C7/22 ,  G11C11/4076 ,  G11C11/4093 ,  G11C11/4096 ,  G11C5/02 ,  G06F13/40 ,  G11C29/02

Abstract: A semiconductor memory system includes a first semiconductor memory die and a second semiconductor memory die. The first semiconductor memory die includes a primary data interface to receive an input data stream during write operations and to deserialize the input data stream into a first plurality of data streams, and also includes a secondary data interface, coupled to the primary data interface, to transmit the first plurality of data streams. The second semiconductor memory die includes a secondary data interface, coupled to the secondary data interface of the first semiconductor memory die, to receive the first plurality of data streams.

公开(公告)号：US20200107441A1

公开(公告)日：2020-04-02

申请号：US16657130

申请日：2019-10-18

Applicant: Rambus Inc.

Inventor： Frederick A. Ware ,  Suresh Rajan

IPC: H05K1/11 ,  G11C11/4093 ,  H05K1/18 ,  G06F15/78 ,  G11C11/408 ,  G06F1/18 ,  G11C5/04 ,  G11C5/06 ,  G11C7/10 ,  G06F13/16 ,  G06F13/40

Abstract: The embodiments described herein describe technologies for memory systems. One implementation of a memory system includes a motherboard substrate with multiple module sockets, at least one of which is populated with a memory module. A first set of data lines is disposed on the motherboard substrate and coupled to the module sockets. The first set of data lines includes a first subset of point-to-point data lines coupled between a memory controller and a first socket and a second subset of point-to-point data lines coupled between the memory controller and a second socket. A second set of data lines is disposed on the motherboard substrate and coupled between the first socket and the second socket. The first and second sets of data lines can make up a memory channel.

公开(公告)号：US10455698B2

公开(公告)日：2019-10-22

申请号：US16208353

申请日：2018-12-03

Applicant: Rambus Inc.

Inventor： Frederick A. Ware ,  Suresh Rajan

IPC: G11C11/00 ,  H05K1/11 ,  G06F13/40 ,  H05K1/18 ,  G11C7/10 ,  G11C5/06 ,  G11C5/04 ,  G11C11/4093 ,  G06F13/16 ,  G11C11/408 ,  G06F15/78 ,  G06F1/18

Abstract: The embodiments described herein describe technologies for memory systems. One implementation of a memory system includes a motherboard substrate with multiple module sockets, at least one of which is populated with a memory module. A first set of data lines is disposed on the motherboard substrate and coupled to the module sockets. The first set of data lines includes a first subset of point-to-point data lines coupled between a memory controller and a first socket and a second subset of point-to-point data lines coupled between the memory controller and a second socket. A second set of data lines is disposed on the motherboard substrate and coupled between the first socket and the second socket. The first and second sets of data lines can make up a memory channel.

公开(公告)号：US10453517B2

公开(公告)日：2019-10-22

申请号：US15483817

申请日：2017-04-10

Applicant: Rambus Inc.

Inventor： Frederick A. Ware ,  Suresh Rajan ,  Scott C. Best

IPC: G11C11/408 ,  G11C5/04 ,  G11C11/4093 ,  G06F12/06 ,  G06F13/16 ,  G11C7/10 ,  G11C7/22 ,  G11C11/4076

Abstract: The embodiments described herein describe technologies for using the memory modules in different modes of operation, such as in a standard multi-drop mode or as in a dynamic point-to-point (DPP) mode (also referred to herein as an enhanced mode). The memory modules can also be inserted in the sockets of the memory system in different configurations.

公开(公告)号：US10380053B2

公开(公告)日：2019-08-13

申请号：US15289785

申请日：2016-10-10

Applicant: Rambus Inc.

Inventor： Amir Amirkhany ,  Suresh Rajan ,  Ravindranath Kollipara ,  Ian Shaeffer ,  David A. Secker

IPC: G06F13/40 ,  G06F13/16 ,  G06F12/00 ,  G06F13/00

Abstract: A memory module comprises a data interface including a plurality of data lines and a plurality of configurable switches coupled between the data interface and a data path to one or more memories. The effective width of the memory module can be configured by enabling or disabling different subsets of the configurable switches. The configurable switches may be controlled by manual switches, by a buffer on the memory module, by an external memory controller, or by the memories on the memory module.

公开(公告)号：US20190191561A1

公开(公告)日：2019-06-20

申请号：US16208353

申请日：2018-12-03

Applicant: Rambus Inc.

Inventor： Frederick A. Ware ,  Suresh Rajan

IPC: H05K1/11 ,  G06F13/40 ,  H05K1/18 ,  G11C7/10 ,  G11C5/06 ,  G11C5/04 ,  G06F1/18 ,  G11C11/4093 ,  G06F13/16 ,  G11C11/408 ,  G06F15/78

CPC classification number: H05K1/11 ,  G06F1/184 ,  G06F13/1694 ,  G06F13/4068 ,  G06F15/7803 ,  G11C5/04 ,  G11C5/06 ,  G11C7/10 ,  G11C11/4082 ,  G11C11/4093 ,  H05K1/181 ,  H05K2201/10159 ,  H05K2201/10189

Abstract: The embodiments described herein describe technologies for memory systems. One implementation of a memory system includes a motherboard substrate with multiple module sockets, at least one of which is populated with a memory module. A first set of data lines is disposed on the motherboard substrate and coupled to the module sockets. The first set of data lines includes a first subset of point-to-point data lines coupled between a memory controller and a first socket and a second subset of point-to-point data lines coupled between the memory controller and a second socket. A second set of data lines is disposed on the motherboard substrate and coupled between the first socket and the second socket. The first and second sets of data lines can make up a memory channel.