公开(公告)号：US07473622B2

公开(公告)日：2009-01-06

申请号：US11707094

申请日：2007-02-16

申请人： Shunpei Yamazaki ,  Hisashi Ohtani ,  Koichiro Tanaka ,  Kenji Kasahara ,  Ritsuko Kawasaki

发明人： Shunpei Yamazaki ,  Hisashi Ohtani ,  Koichiro Tanaka ,  Kenji Kasahara ,  Ritsuko Kawasaki

IPC分类号： H01L21/20

CPC分类号： H01L21/02683 ,  H01L21/02422 ,  H01L21/02488 ,  H01L21/02532 ,  H01L21/02595 ,  H01L21/02691 ,  H01L21/2026 ,  H01L27/1285 ,  Y10S438/904

摘要： To provide a laser apparatus and a laser annealing method with which a crystalline semiconductor film with a larger crystal grain size is obtained and which are low in their running cost. A solid state laser easy to maintenance and high in durability is used as a laser, and laser light emitted therefrom is linearized to increase the throughput and to reduce the production cost as a whole. Further, both the front side and the back side of an amorphous semiconductor film is irradiated with such laser light to obtain the crystalline semiconductor film with a larger crystal grain size.

摘要翻译： 为了提供一种激光装置和激光退火方法，通过该方法获得具有较大晶粒尺寸的结晶半导体膜并且其运行成本低。 使用易于维护的固态激光器和耐久性高的激光器，并且从其发射的激光线性化，从而提高了生产量并降低了整体的生产成本。 此外，用这样的激光照射非晶半导体膜的正面和背面，得到晶粒尺寸较大的结晶半导体膜。

公开(公告)号：US07456371B2

公开(公告)日：2008-11-25

申请号：US10836204

申请日：2004-05-03

申请人： Kenji Kasahara ,  Ritsuko Kawasaki ,  Hisashi Ohtani ,  Koichiro Tanaka

发明人： Kenji Kasahara ,  Ritsuko Kawasaki ,  Hisashi Ohtani ,  Koichiro Tanaka

IPC分类号： B23K26/06 ,  H01L21/20 ,  H01L21/36 ,  G02B27/10 ,  G02B27/14

CPC分类号： H01L21/02675 ,  B23K26/0608 ,  B23K26/067 ,  B23K26/0676 ,  H01L21/2026

摘要： The present invention provides a laser apparatus including a transmission-variable mirror and a method for forming a semiconductor device using the apparatus. For crystallizing an amorphous semiconductor film by irradiation of laser beams, a top surface and a back surface of the amorphous semiconductor film are irradiated with the laser beams. In this case, the transmission-variable mirror is used for dividing a laser light emitted from a laser source.

摘要翻译： 本发明提供一种激光装置，其包括透射变换镜和使用该装置形成半导体器件的方法。 为了通过激光束的照射使非晶半导体膜结晶，用激光照射非晶半导体膜的上表面和背面。 在这种情况下，透射变换镜用于分割从激光源发射的激光。

公开(公告)号：US07419861B2

公开(公告)日：2008-09-02

申请号：US11158453

申请日：2005-06-22

申请人： Koichiro Tanaka ,  Shunpei Yamazaki ,  Ritsuko Kawasaki

发明人： Koichiro Tanaka ,  Shunpei Yamazaki ,  Ritsuko Kawasaki

IPC分类号： H01L21/00

CPC分类号： H01L21/02686 ,  B23K26/0604 ,  B23K26/0608 ,  B23K26/067 ,  H01L21/02422 ,  H01L21/02532 ,  H01L21/02678 ,  H01L21/02691 ,  H01L21/2026 ,  H01L21/268 ,  H01L27/1285

摘要： To form a polycrystalline silicon film having a grain size of 1 μm or greater by means of laser annealing. A beam emitted from a laser apparatus (101) is split in two by a half mirror. The split beams are processed into linear shapes by cylindrical lenses (102) to (105), and (207), then simultaneously irradiate an irradiation surface (209). If an amorphous silicon film formed on a glass substrate is disposed on the irradiation surface (209), an area will be irradiated by both a linear shape beam entering from a front surface and a linear shape beam that has transmitted through the glass surface. Both linear shape beams irradiate the same area to thereby crystallize the amorphous silicon film.

摘要翻译： 通过激光退火形成粒径为1μm以上的多晶硅膜。 从激光装置（101）发射的光束被半反射镜分离。 通过圆柱透镜（102）到（105）和（207）将分割光束处理成线状，然后同时照射照射表面（209）。 如果将形成在玻璃基板上的非晶硅膜设置在照射面（209）上，则从前表面进入的线状光束和透过玻璃表面的线状光束都会被照射面积。 两个直线形光束照射相同的区域，从而使非晶硅膜结晶。

公开(公告)号：US20070138475A1

公开(公告)日：2007-06-21

申请号：US11703667

申请日：2007-02-08

申请人： Hidehito Kitakado ,  Ritsuko Kawasaki ,  Kenji Kasahara

发明人： Hidehito Kitakado ,  Ritsuko Kawasaki ,  Kenji Kasahara

IPC分类号： H01L29/786

CPC分类号： H01L29/66765 ,  G02F1/13454 ,  H01L27/124 ,  H01L27/1255 ,  H01L29/42384 ,  H01L29/458 ,  H01L29/4908 ,  H01L29/78621 ,  H01L29/78627 ,  H01L29/78633

摘要： The present invention provides a semiconductor device in which a bottom-gate TFT or an inverted, stagger TFT arranged in each circuit is suitably constructed in conformity with the functionality of the respective circuits, thereby attaining an improvement in the operating efficiency and reliability of the semiconductor device. In the structure, LDD regions in a pixel TFT are arranged so as not to overlap with a channel protection insulating film and to overlap with a gate electrode by at least a portion thereof. LDD regions in an N-channel TFT of a drive circuit is arranged so as not to overlap with a channel protection insulating film and to overlap with a gate electrode by at least a portion thereof. LDD regions in a P-channel TFT of the drive circuit is arranged so as to overlap with a channel protection insulating film and to overlap with the gate electrode.

摘要翻译： 本发明提供了一种半导体器件，其中布置在每个电路中的底栅TFT或倒置的交错TFT适当地构造成与各个电路的功能一致，从而提高半导体的操作效率和可靠性 设备。 在该结构中，像素TFT中的LDD区域布置成不与沟道保护绝缘膜重叠，并且通过其至少一部分与栅电极重叠。 驱动电路的N沟道TFT中的LDD区域布置成不与沟道保护绝缘膜重叠，并且通过其至少一部分与栅电极重叠。 驱动电路的P沟道TFT中的LDD区域布置成与沟道保护绝缘膜重叠并与栅电极重叠。

公开(公告)号：US07179698B2

公开(公告)日：2007-02-20

申请号：US10871380

申请日：2004-06-21

申请人： Shunpei Yamazaki ,  Hisashi Ohtani ,  Koichiro Tanaka ,  Kenji Kasahara ,  Ritsuko Kawasaki

发明人： Shunpei Yamazaki ,  Hisashi Ohtani ,  Koichiro Tanaka ,  Kenji Kasahara ,  Ritsuko Kawasaki

IPC分类号： H01L21/00

CPC分类号： H01L21/02683 ,  H01L21/02422 ,  H01L21/02488 ,  H01L21/02532 ,  H01L21/02595 ,  H01L21/02691 ,  H01L21/2026 ,  H01L27/1285 ,  Y10S438/904

摘要： To provide a laser apparatus and a laser annealing method with which a crystalline semiconductor film with a larger crystal grain size is obtained and which are low in their running cost. A solid state laser easy to maintenance and high in durability is used as a laser, and laser light emitted therefrom is linearized to increase the throughput and to reduce the production cost as a whole. Further, both the front side and the back side of an amorphous semiconductor film is irradiated with such laser light to obtain the crystalline semiconductor film with a larger crystal grain size.

摘要翻译： 为了提供一种激光装置和激光退火方法，通过该方法获得具有较大晶粒尺寸的结晶半导体膜并且其运行成本低。 使用易于维护的固态激光器和耐久性高的激光器，并且从其发射的激光线性化，从而提高了生产量并降低了整体的生产成本。 此外，用这样的激光照射非晶半导体膜的正面和背面，得到晶体尺寸较大的结晶半导体膜。

公开(公告)号：US07132687B2

公开(公告)日：2006-11-07

申请号：US10958887

申请日：2004-10-05

申请人： Ritsuko Kawasaki ,  Hidehito Kitakado ,  Kenji Kasahara ,  Shunpei Yamazaki

发明人： Ritsuko Kawasaki ,  Hidehito Kitakado ,  Kenji Kasahara ,  Shunpei Yamazaki

IPC分类号： H01L29/04

CPC分类号： H01L27/1214 ,  G02F1/13454 ,  H01L27/3244 ,  H01L29/66765 ,  H01L29/78621 ,  H01L29/78627 ,  H01L29/78633 ,  H01L29/78636 ,  H01L29/78645

摘要： To improve the operation characteristic and reliability of a semiconductor device by optimizing the structure of bottom gate type or inverted stagger type TFTs arranged in circuits of the semiconductor device in accordance with the function of the respective circuits. At least LDD regions that overlap with a gate electrode are formed in an N channel type TFT of a driving circuit, and LDD regions that do not overlap with the gate electrode are formed in an N channel type TFT of a pixel matrix circuit. The concentration of the two kinds of LDD regions is differently set from each other, to thereby obtain the optimal circuit operation.

摘要翻译： 通过根据各个电路的功能优化设置在半导体器件的电路中的底栅型或倒置交错型TFT的结构来提高半导体器件的操作特性和可靠性。 至少与栅电极重叠的LDD区域形成在驱动电路的N沟道型TFT中，并且在像素矩阵电路的N沟道型TFT中形成与栅电极不重叠的LDD区域。 两种LDD区域的浓度彼此不同，从而获得最佳电路操作。

公开(公告)号：US07132686B2

公开(公告)日：2006-11-07

申请号：US11298378

申请日：2005-12-08

申请人： Shunpei Yamazaki ,  Taketomi Asami ,  Toru Takayama ,  Ritsuko Kawasaki ,  Hiroki Adachi ,  Naoya Sakamoto ,  Masahiko Hayakawa ,  Hiroshi Shibata ,  Yasuyuki Arai

发明人： Shunpei Yamazaki ,  Taketomi Asami ,  Toru Takayama ,  Ritsuko Kawasaki ,  Hiroki Adachi ,  Naoya Sakamoto ,  Masahiko Hayakawa ,  Hiroshi Shibata ,  Yasuyuki Arai

IPC分类号： H01L29/04 ,  H01L31/036 ,  H01L31/0376 ,  H01L31/20

CPC分类号： H01L29/7842 ,  H01L27/12 ,  H01L27/1248 ,  H01L27/1277 ,  H01L29/66757 ,  H01L29/66765 ,  H01L29/78603 ,  H01L29/78621 ,  H01L29/78627 ,  H01L29/78636 ,  H01L29/78645 ,  H01L2029/7863

摘要： In a semiconductor device including a laminate of a first insulating layer, a crystalline semiconductor layer, and a second insulating layer, characteristics of the device are improved by determining its structure in view of stress balance. In the semiconductor device including an active layer of the crystalline semiconductor layer having tensile stress on a substrate, tensile stress is given to the first insulating layer formed to be in close contact with a surface of the semiconductor layer at a substrate side, and compressive stress is given to the second insulating layer formed to be in close contact with a surface of the semiconductor layer at a side opposite to the substrate side.

公开(公告)号：US20060246634A1

公开(公告)日：2006-11-02

申请号：US11454880

申请日：2006-06-19

申请人： Kenji Kasahara ,  Ritsuko Kawasaki ,  Hisashi Ohtani

发明人： Kenji Kasahara ,  Ritsuko Kawasaki ,  Hisashi Ohtani

IPC分类号： H01L21/84 ,  H01L21/20

CPC分类号： H01L21/02675 ,  G02F1/13454 ,  H01L21/02422 ,  H01L21/02488 ,  H01L21/02494 ,  H01L21/02502 ,  H01L21/02532 ,  H01L21/2026 ,  H01L27/1281 ,  H01L27/1296 ,  H01L29/66825

摘要： To realize TFT enabling high-speed operation by fabricating a crystalline semiconductor film in which positions and sizes of crystal grains are controlled and using the crystalline semiconductor film in a channel forming region of TFT, a film thickness is stepped by providing a stepped difference in at least one layer of a matrix insulating film among a plurality of matrix insulating films having refractive indices different from each other. By irradiating laser beam from a rear face side of a substrate (or both sides of a surface side and the rear face side of the substrate), there is formed an effective intensity distribution of laser beam with regard to a semiconductor film and there is produced a temperature gradient in correspondence with a shape of the stepped difference and a distribution of the film thickness of the matrix insulating film in the semiconductor film. By utilizing thereof, a location of producing lateral growth and a direction thereof can be controlled to thereby enable to provide crystal grains having large particle sizes.

公开(公告)号：US20060113543A1

公开(公告)日：2006-06-01

申请号：US11298378

申请日：2005-12-08

申请人： Shunpei Yamazaki ,  Taketomi Asami ,  Toru Takayama ,  Ritsuko Kawasaki ,  Hiroki Adachi ,  Naoya Sakamoto ,  Masahiko Hayakawa ,  Hiroshi Shibata ,  Yasuyuki Arai

发明人： Shunpei Yamazaki ,  Taketomi Asami ,  Toru Takayama ,  Ritsuko Kawasaki ,  Hiroki Adachi ,  Naoya Sakamoto ,  Masahiko Hayakawa ,  Hiroshi Shibata ,  Yasuyuki Arai

IPC分类号： H01L29/04

CPC分类号： H01L29/7842 ,  H01L27/12 ,  H01L27/1248 ,  H01L27/1277 ,  H01L29/66757 ,  H01L29/66765 ,  H01L29/78603 ,  H01L29/78621 ,  H01L29/78627 ,  H01L29/78636 ,  H01L29/78645 ,  H01L2029/7863

摘要： In a semiconductor device including a laminate of a first insulating layer, a crystalline semiconductor layer, and a second insulating layer, characteristics of the device are improved by determining its structure in view of stress balance. In the semiconductor device including an active layer of the crystalline semiconductor layer having tensile stress on a substrate, tensile stress is given to the first insulating layer formed to be in close contact with a surface of the semiconductor layer at a substrate side, and compressive stress is given to the second insulating layer formed to be in close contact with a surface of the semiconductor layer at a side opposite to the substrate side.

公开(公告)号：US06974731B2

公开(公告)日：2005-12-13

申请号：US09986743

申请日：2001-11-09

申请人： Shunpei Yamazaki ,  Hisashi Ohtani ,  Koichiro Tanaka ,  Kenji Kasahara ,  Ritsuko Kawasaki

发明人： Shunpei Yamazaki ,  Hisashi Ohtani ,  Koichiro Tanaka ,  Kenji Kasahara ,  Ritsuko Kawasaki

IPC分类号： H01L21/20 ,  H01L21/00 ,  H01L21/84 ,  H01L21/36

CPC分类号： H01L21/02683 ,  H01L21/02422 ,  H01L21/02488 ,  H01L21/02532 ,  H01L21/02595 ,  H01L21/02691 ,  H01L21/2026 ,  H01L27/1285 ,  Y10S438/904

摘要： To provide a laser apparatus and a laser annealing method with which a crystalline semiconductor film with a larger crystal grain size is obtained and which are low in their running cost. A solid state laser easy to maintenance and high in durability is used as a laser, and laser light emitted therefrom is linearized to increase the throughput and to reduce the production cost as a whole. Further, both the front side and the back side of an amorphous semiconductor film is irradiated with such laser light to obtain the crystalline semiconductor film with a larger crystal grain size.

摘要翻译： 为了提供一种激光装置和激光退火方法，通过该方法获得具有较大晶粒尺寸的结晶半导体膜并且其运行成本低。 使用易于维护的固态激光器和耐久性高的激光器，并且从其发射的激光线性化，从而提高了生产量并降低了整体的生产成本。 此外，用这样的激光照射非晶半导体膜的正面和背面，得到晶粒尺寸较大的结晶半导体膜。