公开(公告)号：US20170275154A1

公开(公告)日：2017-09-28

申请号：US15470342

申请日：2017-03-27

申请人： Robert Bosch GmbH

发明人： Seow Yuen Yee ,  Ashwin Samarao ,  Gary Yama

IPC分类号： B81B7/00 ,  C23C16/22 ,  B81C1/00 ,  C23C16/455

摘要： System and method for forming an ALD assembly on a surface of a microelectromechanical system (MEMS) device comprises a substrate having a surface and the ALD assembly is at least partially disposed on the surface of the substrate, wherein the ALD assembly is at least one of hydrophobic and hydrophilic properties. The ALD layer further includes a first ALD and a second ALD. On the surface of the substrate, the first ALD is deposited in a first deposition cycle and the second ALD is deposited in a second deposition cycle. The ALD assembly further comprises a seed layer formed using atomic layer deposition and the ALD layer is at least partially disposed on the seed layer. In one example, the seed layer is formed from alumina (Al2O3) and the ALD layer is formed from platinum (Pt). In alternate embodiment, on the seed layer, the first ALD is deposited in a first deposition cycle and the second ALD is deposited in a subsequent deposition cycle. The substrate is formed from silicon dioxide (SiO2).

公开(公告)号：US20160223404A1

公开(公告)日：2016-08-04

申请号：US15022601

申请日：2014-09-26

申请人： ROBERT BOSCH GMBH

发明人： Ashwin K. Samarao ,  Gary O'Brien ,  Ando Feyh ,  Fabian Purkl ,  Gary Yama

IPC分类号： G01J5/20

CPC分类号： G01J5/20 ,  G01J5/024

摘要： A method for fabricating a semiconductor device includes patterning a sacrificial layer on a substrate to define a bolometer, with trenches being formed in the sacrificial layer to define anchors for the bolometer, the trenches extending through the sacrificial layer and exposing conductive elements at the bottom of the trenches. A thin titanium nitride layer is then deposited on the sacrificial layer and within the trenches. The titanium nitride layer is configured to form a structural support for the bolometer and to provide an electrical connection to the conductive elements on the substrate.

摘要翻译： 一种用于制造半导体器件的方法包括在衬底上图案化牺牲层以限定测辐射热计，其中在牺牲层中形成沟槽以限定测辐射热计的锚定，所述沟槽延伸穿过牺牲层并且暴露出底部的导电元件 壕沟 然后在牺牲层上和沟槽内沉积薄的氮化钛层。 氮化钛层被配置成形成用于测辐射热计的结构支撑件，并提供与衬底上的导电元件的电连接。

公开(公告)号：US20160137485A1

公开(公告)日：2016-05-19

申请号：US14201453

申请日：2014-03-07

申请人： Robert Bosch GmbH

发明人： Andrew Graham ,  Gary Yama ,  Gary O'Brien

IPC分类号： B81B3/00 ,  B81C1/00

CPC分类号： B81B3/0021 ,  B81B2201/0271 ,  B81B2203/04 ,  B81B2203/053 ,  B81C1/00095 ,  B81C1/00166 ,  B81C2201/0132 ,  B81C2201/014 ,  B81C2201/0177 ,  B81C2203/0136

摘要： In one embodiment, a method of forming an out-of-plane electrode includes forming an oxide layer above an upper surface of a device layer, etching an etch stop perimeter defining trench extending through the oxide layer, forming a first cap layer portion on an upper surface of the oxide layer and within the etch stop perimeter defining trench, etching a first electrode perimeter defining trench extending through the first cap layer portion and stopping at the oxide layer, depositing a first material portion within the first electrode perimeter defining trench, depositing a second cap layer portion above the deposited first material portion, and vapor releasing a portion of the oxide layer with the etch stop portion providing a lateral etch stop.

摘要翻译： 在一个实施例中，形成平面外电极的方法包括在器件层的上表面上形成氧化物层，蚀刻限定延伸穿过氧化物层的沟槽的蚀刻停止周界，在第一帽层部分上形成 氧化物层的上表面，并且在蚀刻停止周界内限定沟槽，蚀刻延伸穿过第一盖层部分并停止在氧化物层处的第一电极周界，限定沟槽，在第一电极周界限定沟槽内沉积第一材料部分，沉积 在沉积的第一材料部分上方的第二盖层部分，以及用蚀刻停止部分提供横向蚀刻停止物的一部分氧化物层的蒸气。

公开(公告)号：US09093594B2

公开(公告)日：2015-07-28

申请号：US14054923

申请日：2013-10-16

申请人： Robert Bosch GmbH

发明人： Ando Lars Feyh ,  Po-Jui Chen ,  Fabian Purkl ,  Gary Yama ,  Gary O'Brien

IPC分类号： G01J5/20 ,  H01L31/09 ,  H01L37/02 ,  G01J5/02 ,  G01J5/10 ,  G01J5/08

CPC分类号： H01L31/09 ,  G01J5/024 ,  G01J5/0853 ,  G01J5/10 ,  G01J5/20 ,  H01L37/02

摘要： A semiconductor device includes a substrate, suspension structures extending from the upper surface of the substrate, and an absorber stack attached to the substrate by the suspension structures. The suspension structures suspend the absorber stack over the substrate such that a gap is defined between the absorber stack and the substrate. The absorber stack includes a plurality of metallization layers interleaved with a plurality of insulating layers. At least one of the metallization layers has a thickness of approximately 10 nm or less.

摘要翻译： 半导体器件包括衬底，从衬底的上表面延伸的悬浮结构以及通过悬挂结构附接到衬底的吸收体堆叠。 悬架结构将吸收体堆叠物悬挂在衬底上，使得在吸收体堆叠和衬底之间限定间隙。 吸收体堆叠包括与多个绝缘层交错的多个金属化层。 至少一层金属化层的厚度约为10nm以下。

公开(公告)号：US09064982B2

公开(公告)日：2015-06-23

申请号：US14109917

申请日：2013-12-17

申请人： Robert Bosch GmbH

发明人： Fabian Purkl ,  Gary Yama ,  Ando Feyh ,  Andrew Graham ,  Ashwin Samarao ,  Gary O'Brien

IPC分类号： H01L21/00 ,  H01L31/0203 ,  G01J5/04 ,  G01J5/20 ,  H01L31/09 ,  H01L31/18

CPC分类号： H01L31/0203 ,  G01J5/045 ,  G01J5/20 ,  H01L31/09 ,  H01L31/18

摘要： A method of fabricating a bolometer infrared sensor includes depositing a first sacrificial layer on a surface of a substrate over a sensor region, and forming an absorber structure for the infrared sensor on top of the first sacrificial layer. A second sacrificial layer is deposited on top of the absorber structure. An encapsulating thin film is then deposited on top of the second sacrificial layer. Vent holes are formed in the encapsulating thin film. The first and the second sacrificial layers are removed below the encapsulating thin film to release the absorber structure and form a cavity above the sensing region that extends down to the substrate in which the absorber structure is located via the vent holes. The vent holes are then closed in a vacuum environment to seal the absorber structure within the cavity.

摘要翻译： 一种制造测辐射热计红外传感器的方法包括在传感器区域上的衬底表面上沉积第一牺牲层，以及在第一牺牲层的顶部上形成用于红外传感器的吸收体结构。 第二牺牲层沉积在吸收体结构的顶部。 然后将封装的薄膜沉积在第二牺牲层的顶部上。 在封装薄膜中形成排气孔。 在封装薄膜下方移除第一和第二牺牲层，以释放吸收体结构，并在感应区域之上形成一个空腔，该感应区域向下延伸到吸收体结构通过通气孔位于其中的衬底。 然后在真空环境中关闭通气孔以密封空腔内的吸收体结构。

公开(公告)号：US20140272333A1

公开(公告)日：2014-09-18

申请号：US14200198

申请日：2014-03-07

申请人： Robert Bosch GmbH

发明人： Fabian Purkl ,  John Provine ,  Gary Yama ,  Ando Feyh ,  Gary O'Brien

IPC分类号： C23C16/455

CPC分类号： C23C16/45529 ,  Y10T428/24851

摘要： A metamaterial includes a first continuous layer formed with a first material by atomic layer deposition (ALD), a first non-continuous layer formed with a second material by ALD on first upper surface portions of a first upper surface of the first continuous layer, and a second continuous layer formed with the first material by ALD on second upper surface portions of the first upper surface of the first continuous layer and on a second upper surface of the first non-continuous layer.

摘要翻译： 超材料包括通过原子层沉积（ALD）形成的第一材料的第一连续层，在第一连续层的第一上表面的第一上表面部分上由ALD形成的第二材料的第一非连续层，以及 第二连续层，其由第一连续层的第一上表面的第二上表面部分上的第一材料和第一非连续层的第二上表面上的第一材料形成。

公开(公告)号：US20140264781A1

公开(公告)日：2014-09-18

申请号：US14201247

申请日：2014-03-07

申请人： Robert Bosch GmbH

发明人： Ando Lars Feyh ,  Fabian Purkl ,  Andrew Graham ,  Gary Yama

IPC分类号： H01L21/02 ,  H01L29/06

CPC分类号： B81C1/00809 ,  B81C2201/016 ,  H01L21/02601 ,  H01L23/3192 ,  H01L45/146 ,  H01L2924/0002 ,  H01L2924/00

摘要： A method of fabricating a passivation layer and a passivation layer for an electronic device. The passivation layer includes at least one passivation film layer and at least one nanoparticle layer. A first film layer is formed of an insulating matrix, such as aluminum oxide (Al2O3) and a first layer of a noble metal nanoparticle layer, such as a platinum nanoparticle layer, is deposited on the first film layer. Additional layers are formed of alternating film layers and nanoparticle layers. The resulting passivation layer provides a thin and robust passivation layer of high film quality to protect electronic devices, components, and systems from the disruptive environmental conditions.

摘要翻译： 一种制造用于电子设备的钝化层和钝化层的方法。 钝化层包括至少一个钝化膜层和至少一个纳米颗粒层。 第一膜层由诸如氧化铝（Al2O3）的绝缘基体形成，并且第一层金属纳米颗粒层（例如铂纳米颗粒层）沉积在第一膜层上。 附加层由交替的膜层和纳米颗粒层形成。 所得到的钝化层提供了一种具有高膜质量的薄且坚固的钝化层，以保护电子设备，部件和系统免受破坏性环境条件的影响。

公开(公告)号：US20140151822A1

公开(公告)日：2014-06-05

申请号：US13705441

申请日：2012-12-05

申请人： ROBERT BOSCH GMBH

发明人： Andrew B. Graham ,  Gary Yama ,  Gary O'Brien

IPC分类号： B81C1/00 ,  B81B3/00

CPC分类号： B81C1/00642 ,  B81B3/0021 ,  G01L9/0047 ,  G01L9/0073

摘要： A method of fabricating a pressure sensor includes performing a chemical vapor deposition (CVD) process to deposit a first sacrificial layer having a first thickness onto a substrate. A portion of the first sacrificial layer is then removed down to the substrate to form a central region of bare silicon. One of a thermal oxidation process and an atomic layer deposition process is then performed to form a second sacrificial layer on the substrate having a second thickness in the central region that is less than the first thickness. A cap layer is then deposited over the first and second sacrificial layers. The second sacrificial layer is removed from the central region, and the first and second sacrificial layers are removed from a perimeter region that at least partially surrounds the central region on the substrate to form a contiguous, structured gap between the cap layer and the substrate, the structured gap having a first width in the central region and a second width in the perimeter region with the second width being greater than the first width.

摘要翻译： 制造压力传感器的方法包括执行化学气相沉积（CVD）工艺以将具有第一厚度的第一牺牲层沉积到衬底上。 然后将第一牺牲层的一部分下移到衬底以形成裸硅的中心区域。 然后执行热氧化工艺和原子层沉积工艺之一，以在衬底上形成第二牺牲层，其中心区域的第二厚度小于第一厚度。 然后在第一和第二牺牲层上沉积覆盖层。 从中心区域去除第二牺牲层，并且从周边区域去除第一和第二牺牲层，周边区域至少部分地围绕衬底上的中心区域，以在盖层和衬底之间形成连续的，结构化的间隙， 所述结构化间隙在所述中心区域具有第一宽度，并且所述周边区域中的第二宽度具有大于所述第一宽度的所述第二宽度。

公开(公告)号：US10999421B1

公开(公告)日：2021-05-04

申请号：US16718012

申请日：2019-12-17

申请人： Robert Bosch GmbH

发明人： Gary Yama ,  Christian Peters ,  Thomas Rocznik ,  Timothy Schultz ,  Ning Wang ,  Seow Yuen Yee

IPC分类号： H04M1/724

摘要： A system of determining a location of a force exerted on a mobile communication device, the system comprising a first pressure sensor disposed within the mobile communication device and adjacent an outer surface of the mobile communication device, wherein the first pressure sensor is attached to the outer surface via a first interface material, wherein the first pressure sensor is configured to detect pressure below the outer surface, a second pressure sensor disposed within the mobile communication device and adjacent the outer surface of the mobile communication device, wherein the second pressure sensor is attached to the outer surface via a second interface material, wherein the second pressure sensor is configured to detect pressure below the outer surface, and a processor coupled to the first and second pressure sensors and configured to activate an associated mobile communication device command in response to the detected pressure being above a threshold.

公开(公告)号：US10298858B2

公开(公告)日：2019-05-21

申请号：US14092152

申请日：2013-11-27

申请人： Robert Bosch GmbH

发明人： Ando Feyh ,  Sam Kavusi ,  Johan Vanderhaegen ,  Gary Yama ,  Fabian Purkl

IPC分类号： H04N7/18 ,  H04N5/33 ,  G01J5/08 ,  G01J5/02 ,  H04N5/225 ,  H04N5/232 ,  H04N13/02

摘要： A device for generating thermal images includes a low resolution infrared (IR) sensor supported within a housing and having a field of view. The IR sensor is configured to generate thermal images of objects within the field of view having a first resolution. A spatial information sensor supported within the housing is configured to determine a position for each of the thermal images generated by the IR sensor. A processing unit supported within the housing is configured to receive the thermal images and to combine the thermal images based on the determined positions of the thermal images to produce a combined thermal image having a second resolution that is greater than the first resolution.