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79 条记录 (耗时 0.023 秒)

    Bolometer fluid flow sensor
    2.
    发明授权
    Bolometer fluid flow sensor 有权

    公开(公告)号：US10168349B2

    公开(公告)日：2019-01-01

    申请号：US15259106

    申请日：2016-09-08

    申请人： Robert Bosch GmbH

    发明人： Seow Yuen Yee ,  Gary Yama ,  Thomas Rocznik

    IPC分类号： G01F1/68 ,  G01P5/26 ,  G01P13/00 ,  G01J5/00 ,  G01J5/04 ,  G01J5/08 ,  G01J5/02 ,  G01J5/06 ,  G01J5/20 ,  G01F1/699 ,  G01F1/684 ,  G01F1/69 ,  G01F1/696

    摘要： A sensor comprises a substrate having a first surface; a cap structure connected to the substrate, the cap structure configured to define a cavity between an inner surface of the cap structure and the first surface of the substrate, the cap structure configured to block infrared radiation from entering the cavity from outside the cap structure; a plurality of absorbers, each absorber in the plurality of absorbers being connected to the first surface of the substrate and arranged at a respective position within the cavity and configured to absorb infrared radiation at the respective position within the cavity; and a plurality of readout circuits, each readout circuit in the plurality of readout circuits being connected to a respective absorber in the plurality of absorbers and configured to provide a measurement signal that indicates an amount of infrared radiation absorbed by the respective absorber.

    System and Method for Maintaining a Smoothed Surface on a MEMS Device
    3.
    发明申请
    System and Method for Maintaining a Smoothed Surface on a MEMS Device 审中-公开

    公开(公告)号：US20180362338A1

    公开(公告)日：2018-12-20

    申请号：US16066580

    申请日：2016-12-29

    申请人： Robert Bosch GmbH

    发明人： Jochen Stehle ,  Gary Yama

    IPC分类号： B81C1/00 ,  B81B7/02

    摘要： A method of fabricating a MEMS device includes performing an atomic layer deposition (ALD) process to deposit a barrier layer such as Aluminum Oxide (AI2O3) having a thickness on a sacrificial layer deposited on a substrate. A portion of the barrier layer is removed to form an etched structure defined as a trench. An epi-polysilicon cap layer is epitaxially growth on the barrier layer and the entire etched structure. A portion of the epi-polysilicon cap layer has been removed to form a plurality of openings. The sacrificial layer is etched away leaving a cavity below the etched openings. A refill epi-polysilicon layer is epitaxially grown in the openings and seals the entire openings after a gap is formed between the cap layer and the substrate.

    BOLOMETER FLUID FLOW SENSOR
    4.
    发明申请
    BOLOMETER FLUID FLOW SENSOR 审中-公开

    公开(公告)号：US20180067143A1

    公开(公告)日：2018-03-08

    申请号：US15259106

    申请日：2016-09-08

    申请人： Robert Bosch GmbH

    发明人： Seow Yuen Yee ,  Gary Yama ,  Thomas Rocznik

    IPC分类号： G01P5/26 ,  G01P13/00

    CPC分类号： G01P5/26 ,  G01F1/68 ,  G01F1/684 ,  G01F1/69 ,  G01F1/696 ,  G01F1/699 ,  G01J5/0037 ,  G01J5/0265 ,  G01J5/045 ,  G01J5/06 ,  G01J5/061 ,  G01J5/0887 ,  G01J5/20 ,  G01J2005/063 ,  G01J2005/202 ,  G01P13/0006

    摘要： A sensor comprises a substrate having a first surface; a cap structure connected to the substrate, the cap structure configured to define a cavity between an inner surface of the cap structure and the first surface of the substrate, the cap structure configured to block infrared radiation from entering the cavity from outside the cap structure; a plurality of absorbers, each absorber in the plurality of absorbers being connected to the first surface of the substrate and arranged at a respective position within the cavity and configured to absorb infrared radiation at the respective position within the cavity; and a plurality of readout circuits, each readout circuit in the plurality of readout circuits being connected to a respective absorber in the plurality of absorbers and configured to provide a measurement signal that indicates an amount of infrared radiation absorbed by the respective absorber.

    MEMS device having a getter
    5.
    发明授权
    MEMS device having a getter 有权
    具有吸气剂的MEMS装置

    公开(公告)号：US09511998B2

    公开(公告)日：2016-12-06

    申请号：US14207752

    申请日：2014-03-13

    申请人： Robert Bosch GmbH

    发明人： Ashwin Samarao ,  Gary O'Brien ,  Ando Feyh ,  Gary Yama ,  Andrew Graham ,  Bongsang Kim ,  Fabian Purkl

    IPC分类号： H01L21/322 ,  B81C1/00 ,  H01L23/28

    CPC分类号： B81C1/00285 ,  B81C2201/0115 ,  B81C2203/0109 ,  B81C2203/0118 ,  B81C2203/035 ,  H01L21/3223 ,  H01L21/3225 ,  H01L23/28

    摘要： A microelectromechanical system (MEMS) device includes a high density getter. The high density getter includes a silicon surface area formed by porosification or by the formation of trenches within a sealed cavity of the device. The silicon surface area includes a deposition of titanium or other gettering material to reduce the amount of gas present in the sealed chamber such that a low pressure chamber is formed. The high density getter is used in bolometers and gyroscopes but is not limited to those devices.

    摘要翻译： 微机电系统（MEMS）装置包括高密度吸气剂。 高密度吸气剂包括通过孔化形成的硅表面积或通过在该装置的密封腔内形成沟槽。 硅表面积包括钛或其它吸气材料的沉积物，以减少密封室中存在的气体的量，从而形成低压室。 高密度吸气剂用于测辐射仪和陀螺仪，但不限于这些设备。

    Wafer with spacer including horizontal member
    7.
    发明授权
    Wafer with spacer including horizontal member 有权
    具有间隔件的晶片，包括水平构件

    公开(公告)号：US08933535B2

    公开(公告)日：2015-01-13

    申请号：US13868438

    申请日：2013-04-23

    申请人： Robert Bosch GmbH

    发明人： Andrew B. Graham ,  Gary Yama ,  Gary O'Brien

    IPC分类号： H01L29/00 ,  H01L29/06 ,  H01L21/768 ,  H01L23/482 ,  H01L21/762

    CPC分类号： H01L29/0649 ,  H01L21/76232 ,  H01L21/76283 ,  H01L21/7682 ,  H01L23/4821 ,  H01L2924/0002 ,  H01L2924/00

    摘要： A method of forming an insulating spacer is disclosed that includes providing a base layer, providing an intermediate layer above an upper surface of the base layer, etching a first trench in the intermediate layer, depositing a first insulating material portion within the first trench, depositing a second insulating material portion above an upper surface of the intermediate layer, forming an upper layer above an upper surface of the second insulating material portion, etching a second trench in the upper layer, and depositing a third insulating material portion within the second trench and on the upper surface of the second insulating material portion. A wafer is also disclosed.

    摘要翻译： 公开了一种形成绝缘间隔物的方法，其包括提供基底层，在基底层的上表面上方提供中间层，蚀刻中间层中的第一沟槽，在第一沟槽内沉积第一绝缘材料部分，沉积 在所述中间层的上表面上方的第二绝缘材料部分，在所述第二绝缘材料部分的上表面上方形成上层，蚀刻所述上层中的第二沟槽，以及在所述第二沟槽内沉积第三绝缘材料部分， 在第二绝缘材料部分的上表面上。 还公开了晶片。

    Wafer with recessed plug
    8.
    发明授权
    Wafer with recessed plug 有权
    带嵌入式插头的晶圆

    公开(公告)号：US08890283B2

    公开(公告)日：2014-11-18

    申请号：US14173383

    申请日：2014-02-05

    申请人： Robert Bosch GmbH

    发明人： Andrew B. Graham ,  Gary Yama ,  Gary O'Brien

    IPC分类号： H01L29/00 ,  H01L21/762 ,  B81B7/00 ,  B81C1/00

    CPC分类号： B81B7/00 ,  B81B2203/0307 ,  B81C1/00126 ,  H01L21/76283

    摘要： In one embodiment, a method of forming a plug includes providing a base layer, providing an intermediate oxide layer above an upper surface of the base layer, providing an upper layer above an upper surface of the intermediate oxide layer, etching a trench including a first trench portion extending through the upper layer, a second trench portion extending through the oxide layer, and a third trench portion extending into the base layer, depositing a first material portion within the third trench portion, depositing a second material portion within the second trench portion, and depositing a third material portion within the first trench portion.

    摘要翻译： 在一个实施例中，形成插头的方法包括提供基底层，在基底层的上表面上方提供中间氧化物层，在中间氧化物层的上表面上方提供上层，蚀刻包括第一 延伸穿过上层的沟槽部分，延伸穿过氧化物层的第二沟槽部分和延伸到基层中的第三沟槽部分，在第三沟槽部分内沉积第一材料部分，在第二沟槽部分内沉积第二材料部分 并且在第一沟槽部分内沉积第三材料部分。

    Out-of-Plane Spacer Defined Electrode
    9.
    发明申请
    Out-of-Plane Spacer Defined Electrode 有权
    平面间隔定子电极

    公开(公告)号：US20140197713A1

    公开(公告)日：2014-07-17

    申请号：US14217956

    申请日：2014-03-18

    申请人： Robert Bosch GmbH

    发明人： Andrew B. Graham ,  Gary Yama ,  Gary O'Brien

    IPC分类号： B81B3/00

    CPC分类号： B81B3/0021 ,  B81B2207/095 ,  B81C1/00301

    摘要： In one embodiment, a method of forming an out-of-plane electrode includes providing an oxide layer above an upper surface of a device layer, providing a first cap layer portion above an upper surface of the oxide layer, etching a first electrode perimeter defining trench extending through the first cap layer portion and stopping at the oxide layer, depositing a first material portion within the first electrode perimeter defining trench, depositing a second cap layer portion above the first material portion, vapor releasing a portion of the oxide layer, depositing a third cap layer portion above the second cap layer portion, etching a second electrode perimeter defining trench extending through the second cap layer portion and the third cap layer portion, and depositing a second material portion within the second electrode perimeter defining trench, such that a spacer including the first material portion and the second material portion define out-of-plane electrode.

    摘要翻译： 在一个实施例中，形成平面外电极的方法包括在器件层的上表面上方提供氧化物层，在氧化物层的上表面上方提供第一覆盖层部分，蚀刻第一电极周界， 沟槽延伸穿过第一盖层部分并在氧化物层处停止，在第一电极周界限定沟槽内沉积第一材料部分，在第一材料部分上方沉积第二盖层部分，释放氧化物层的一部分的蒸气，沉积 在所述第二盖层部分上方的第三盖层部分，蚀刻延伸穿过所述第二盖层部分和所述第三盖层部分的第二电极周界限定沟槽，以及在所述第二电极周界限定沟槽内沉积第二材料部分， 包括第一材料部分和第二材料部分的间隔件限定了平面外的电极。