Substituted norbornene fluoroacrylate copolymers and use thereof in lithographic photoresist compositions
    32.
    发明授权
    Substituted norbornene fluoroacrylate copolymers and use thereof in lithographic photoresist compositions 有权
    取代的降冰片烯氟代丙烯酸酯共聚物及其在平版光刻胶组合物中的用途

    公开(公告)号:US06548219B2

    公开(公告)日:2003-04-15

    申请号:US09771262

    申请日:2001-01-26

    IPC分类号: G03F7039

    摘要: Copolymers prepared by radical polymerization of a substituted norbornene monomer and a fluoromethacrylic acid, fluoromethacrylonitrile, or fluoromethacrylate comonomer are provided. The polymers are useful in lithographic phtoresist compositions, particularly chemical amplification resists. In a preferred embodiment, the polymers are substantially transparent to deep ultraviolet (DUV) radiation, i.e., radiation of a wavelength less than 250 nm, including 157 nm, 193 nm and 248 nm radiation, and are thus useful in DUV lithographic photoresist compositions. A process for using the composition to generate resist images on a substrate is also provided, i.e., in the manufacture of integrated circuits or the like.

    摘要翻译: 提供了通过取代的降冰片烯单体和氟代甲基丙烯酸,氟甲基丙烯腈或氟代甲基丙烯酸酯共聚单体的自由基聚合制备的共聚物。 聚合物可用于光刻抗蚀剂组合物,特别是化学增强抗蚀剂。 在优选的实施方案中,聚合物对深紫外(DUV)辐射基本上是透明的,即波长小于250nm的辐射,包括157nm,193nm和248nm辐射,因此可用于DUV平版光刻胶组合物。 还提供了使用该组合物在衬底上产生抗蚀剂图像的方法,即在集成电路等的制造中。

    Alkaline rinse agents for use in lithographic patterning
    33.
    发明授权
    Alkaline rinse agents for use in lithographic patterning 有权
    用于平版印刷图案的碱性漂洗剂

    公开(公告)号:US08298751B2

    公开(公告)日:2012-10-30

    申请号:US12611043

    申请日:2009-11-02

    IPC分类号: G03F7/26

    摘要: Lithographic patterning methods involve the formation of a (one or more) metal oxide capping layer, which is rinsed with an aqueous alkaline solution as part of the method. The rinse solution does not damage the capping layer, but rather allows for lithographic processing without thinning the capping layer or introducing defects into it. Ammoniated water is a preferred rinse solution, which advantageously leaves behind no nonvolatile residue.

    摘要翻译: 平版印刷图案化方法涉及形成(一种或多种)金属氧化物覆盖层,其作为该方法的一部分用碱性水溶液冲洗。 冲洗溶液不会损坏盖层,而是允许光刻处理,而不会使封盖层变薄或引入缺陷。 氨水是优选的漂洗溶液,其有利地不留下非挥发性残余物。

    Photoresists for visible light imaging
    34.
    发明授权
    Photoresists for visible light imaging 有权
    用于可见光成像的光致抗蚀剂

    公开(公告)号:US07807340B2

    公开(公告)日:2010-10-05

    申请号:US12050589

    申请日:2008-03-18

    IPC分类号: G03F7/26

    摘要: A method of creating patterned objects using a class of lithographic photoresist combinations is disclosed which is suitable for use with visible light and does not require a post-exposure bake step. The disclosed photoresists are preferably chemical amplification photoresists and contain a photosensitizer having the structure of formula (I): where Ar1 and Ar2 are independently selected from monocyclic aryl and monocyclic heteroaryl, R1 and R2 may be the same or different, and have the structure —X—R3 where X is O or S and R3 is C1-C6 hydrocarbyl or heteroatom-containing C1-C6 hydrocarbyl, and R4 and R5 are independently selected from the group consisting of hydrogen and —X—R3, or, if ortho to each other, may be taken together to form a five- or six-membered aromatic ring, with the proviso that any heteroatom contained within Ar1, Ar2, or R3 is O or S. The use of the disclosed photoresists, particularly for the manufacture of holographic diffraction gratings, is also disclosed.

    摘要翻译: 公开了一种使用一类光刻胶组合物形成图形物体的方法,其适用于可见光并且不需要曝光后烘烤步骤。 所公开的光致抗蚀剂优选是化学放大光致抗蚀剂,并含有具有式(I)结构的光敏剂:其中Ar 1和Ar 2独立地选自单环芳基和单环杂芳基,R 1和R 2可以相同或不同, X-R3,其中X是O或S,R3是C1-C6烃基或含杂原子的C1-C6烃基,R4和R5独立地选自氢和-X-R3,或者如果每个 另一些可以一起形成五元或六元芳香环,条件是Ar1,Ar2或R3中含有的任何杂原子都是O或S.使用所公开的光致抗蚀剂,特别是用于制造全息 衍射光栅,也被公开。

    Method for employing vertical acid transport for lithographic imaging applications
    36.
    发明授权
    Method for employing vertical acid transport for lithographic imaging applications 失效
    用于平版印刷成像应用的垂直酸运输方法

    公开(公告)号:US07160665B2

    公开(公告)日:2007-01-09

    申请号:US10334219

    申请日:2002-12-30

    IPC分类号: G03F7/38 G03F7/095

    摘要: The present invention provides methods for forming images in positive- or negative-tone chemically amplified photoresists. The methods of the present invention rely on the vertical up-diffusion of photoacid generated by patternwise imaging of an underlayer disposed on a substrate and overcoated with a polymer containing acid labile functionality. In accordance with the present invention, the vertical up-diffusion can be the sole mechanism for imaging formation or the methods of the present invention can be used in conjunction with conventional imaging processes.

    摘要翻译: 本发明提供了在正或负色调化学放大的光致抗蚀剂中形成图像的方法。 本发明的方法依赖于通过对设置在基底上的底层的图案成像产生的光酸的垂直向上扩散,并且用含有酸不稳定性功能的聚合物涂覆。 根据本发明,垂直向上扩散可以是用于成像成像的唯一机构,或者本发明的方法可以与传统的成像过程结合使用。

    Norbornene fluoroacrylate copolymers and process for the use thereof
    38.
    发明授权
    Norbornene fluoroacrylate copolymers and process for the use thereof 有权
    降冰片烯氟代丙烯酸酯共聚物及其使用方法

    公开(公告)号:US06509134B2

    公开(公告)日:2003-01-21

    申请号:US09771149

    申请日:2001-01-26

    IPC分类号: G03F7039

    摘要: Novel norbornene fluoroacrylate copolymers are provided. The polymers are useful in lithographic photoresist compositions, particularly chemical amplification resists. In a preferred embodiment, the polymers are substantially transparent to deep ultraviolet (DUV) radiation, i.e., radiation of a wavelength less than 250 nm, including 157 nm, 193 nm and 248 nm radiation, and are thus useful in DUV lithographic photoresist compositions. A process for using the composition to generate resist images on a substrate is also provided, i.e., in the manufacture of integrated circuits or the like.

    摘要翻译: 提供了新的降冰片烯氟代丙烯酸酯共聚物。 聚合物可用于平版印刷光刻胶组合物,特别是化学增强抗蚀剂。 在优选的实施方案中,聚合物对深紫外(DUV)辐射基本上是透明的,即波长小于250nm的辐射,包括157nm,193nm和248nm辐射,因此可用于DUV平版光刻胶组合物。 还提供了使用该组合物在衬底上产生抗蚀剂图像的方法,即在集成电路等的制造中。