Collagen peptide, dipeptide and malady inhibitor
    31.
    发明授权
    Collagen peptide, dipeptide and malady inhibitor 有权
    胶原肽,二肽和恶性抑制剂

    公开(公告)号:US08410062B2

    公开(公告)日:2013-04-02

    申请号:US13523438

    申请日:2012-06-14

    IPC分类号: A61K38/05

    摘要: A problem that the present invention is to solve is to provide: a main body of a peptide molecule which is effective for inhibition of various maladies such as osteoporosis, osteoarthritis and pressure ulcer, particularly, a dipeptide which is easy to absorb into a body in an intestine; a collagen peptide which comprises the dipeptide as an essential dipeptide; and a malady inhibitor which comprises the dipeptide as an essential effective component. As a means of solving such a problem, a collagen peptide according to the present invention is characterized by comprising a dipeptide having a structure of Hyp-Gly as an essential dipeptide. A dipeptide according to the present invention is characterized by having a structure of Hyp-Gly. A malady inhibitor according to the present invention is characterized by comprising a dipeptide having a structure of Hyp-Gly as an essential effective component.

    摘要翻译: 本发明要解决的问题是提供:对于抑制诸如骨质疏松症,骨关节炎和压力性溃疡等各种疾病的肽分子的主体,特别是容易吸收到体内的二肽 肠 包含二肽作为必需二肽的胶原肽; 以及包含二肽作为基本有效成分的疾病抑制剂。 作为解决上述问题的方法,本发明的胶原肽的特征在于,含有具有Hyp-Gly结构的二肽作为必需二肽的二肽。 根据本发明的二肽的特征在于具有Hyp-Gly的结构。 根据本发明的疾病抑制剂的特征在于包含具有Hyp-Gly结构作为必需有效成分的二肽。

    Semiconductor device using charge pump circuit
    32.
    发明授权
    Semiconductor device using charge pump circuit 有权
    半导体器件采用电荷泵电路

    公开(公告)号:US08325533B2

    公开(公告)日:2012-12-04

    申请号:US12846446

    申请日:2010-07-29

    申请人: Masahiro Wada

    发明人: Masahiro Wada

    IPC分类号: G11C16/04

    CPC分类号: G11C16/10 G11C16/30

    摘要: A semiconductor device including a plurality of capacitance units connected in parallel between a first voltage and a second voltage. Each of the plurality of capacitance units includes: a capacitance element connected with the first voltage; and a capacitance disconnecting circuit connected between the second voltage and the capacitance element. The capacitance disconnecting circuit includes a non-volatile memory cell with a threshold voltage changed based on a change of a leakage current which flows from the capacitance element, and blocks off the leakage current based on a rise of the threshold voltage of the non-volatile memory cell when the leakage current exceeds a predetermined value.

    摘要翻译: 一种半导体器件,包括在第一电压和第二电压之间并联连接的多个电容单元。 所述多个电容单元中的每一个包括:与所述第一电压连接的电容元件; 以及连接在第二电压和电容元件之间的电容断开电路。 电容断开电路包括基于从电容元件流出的漏电流的变化而改变阈值电压的非易失性存储单元,并且基于非易失性的阈值电压的上升阻断泄漏电流 当泄漏电流超过预定值时,存储单元。

    System and method for producing iodine compound
    33.
    发明授权
    System and method for producing iodine compound 有权
    碘化合物的制备方法

    公开(公告)号:US08268284B2

    公开(公告)日:2012-09-18

    申请号:US12864915

    申请日:2009-01-29

    IPC分类号: B01J19/00 C01B7/13 C01B11/22

    摘要: A system (100) of the present invention for producing an iodine compound includes: a raw material adjusting unit (1) for supplying hydrogen-containing gas to at least one of liquid iodine in an iodine melting pot (4) and gaseous iodine obtained by evaporating liquid iodine so as to obtain a mixture gas; a hydrogen iodide producing unit (10) including a hydrogen iodide producing tower (12) having a catalyst layer (12a) for converting the introduced mixture gas into crude hydrogen iodide gas; a hydrogen iodide refining unit for removing unreacted iodine from the introduced crude hydrogen iodide gas so as to obtain hydrogen iodide gas; and an iodine compound producing unit (30) for producing a target iodine compound from the obtained hydrogen iodide gas and a reaction material. This allows producing an iodine compound with high purity easily, efficiently, and with low cost.

    摘要翻译: 用于制备碘化合物的本发明的系统(100)包括:用于向碘熔池(4)中的液碘中的至少一种供给含氢气体的原料调节单元(1)和由 蒸发液体碘以得到混合气体; 含有碘化氢生成塔(12)的碘化氢生成装置(10),具有催化剂层(12a),用于将引入的混合气体转化为粗的碘化氢气体; 一种碘化氢精制装置,用于从引入的碘化氢气体中除去未反应的碘,以获得碘化氢气体; 和由所得碘化氢气体和反应物质制造目标碘化合物的碘化合物生成装置(30)。 这样可以容易地,有效地且低成本地制备高纯度的碘化合物。

    Composite porous body, gas diffusion layer member, cell member, and manufacturing method thereof
    34.
    发明授权
    Composite porous body, gas diffusion layer member, cell member, and manufacturing method thereof 有权
    复合多孔体,气体扩散层部件,电池部件及其制造方法

    公开(公告)号:US07838172B2

    公开(公告)日:2010-11-23

    申请号:US10556565

    申请日:2004-05-07

    IPC分类号: H01M8/00 H01M8/10

    摘要: A composite porous body, a gas diffusion layer member of a polymer electrolyte fuel cell, a cell member for the polymer electrolyte fuel cell, and manufacturing methods thereof are provided. The composite porous body is a metallic composite porous body in which a sheet-like metal portion composed of a composite porous body having a three-dimensional mesh structure and a resin portion extending in an in-plane direction of the metal portion are integrally formed with each other. The gas diffusion layer member of a polymer electrolyte fuel cell is composed of a composite porous body in which a sheet-like metal portion composed of a composite porous body having a three-dimensional mesh structure and a resin portion extending in an in-plane direction of the metal portion are integrally formed with each other. Also, the gas diffusion layer member of a polymer electrolyte fuel cell has a separator plate, and the conductive porous body placed on at least one surface of the separator plate. A resin frame is integrally provided so as to cover the peripheries of separator plate and the conductive porous body.

    摘要翻译: 提供了复合多孔体,固体高分子型燃料电池的气体扩散层部件,聚合物电解质型燃料电池用电池部件及其制造方法。 复合多孔体是金属复合多孔体,其中由具有三维网眼结构的复合多孔体和在金属部分的面内方向延伸的树脂部分组成的片状金属部分与 彼此。 聚合物电解质燃料电池的气体扩散层构件由复合多孔体构成,其中由具有三维网状结构的复合多孔体和在面内方向延伸的树脂部分构成的片状金属部分 的金属部分彼此一体地形成。 此外,聚合物电解质燃料电池的气体扩散层构件具有隔板,并且导电性多孔体位于隔板的至少一个表面上。 一体地设置树脂框架,以覆盖隔板和导电性多孔体的周边。

    OTP memory cell, OTP memory, and method of manufacturing OTP memory cell
    35.
    发明授权
    OTP memory cell, OTP memory, and method of manufacturing OTP memory cell 失效
    OTP存储单元,OTP存储器以及制造OTP存储单元的方法

    公开(公告)号:US07808054B2

    公开(公告)日:2010-10-05

    申请号:US12153250

    申请日:2008-05-15

    申请人: Masahiro Wada

    发明人: Masahiro Wada

    IPC分类号: H01L27/088

    摘要: An OTP memory cell according to the present invention includes: a semiconductor substrate including a lower electrode forming region having a lower electrode formed therein, a diffusion layer forming region having a source and a drain formed therein, a first trench-type insulating region, and a second trench-type insulating region; an upper electrode being in contact with the first trench-type insulating region and formed on the lower electrode with the first insulating film interposed therebetween; and a gate electrode being in contact with the second trench-type insulating region and formed on a channel region with the second insulating film interposed therebetween, in which a shape of at least a part of an end of the lower electrode forming region in contact with the first insulating film is sharper than a shape of an end of the channel region in contact with the second insulating film.

    摘要翻译: 根据本发明的OTP存储单元包括:半导体衬底,包括形成有下电极的下电极形成区,形成有源极和漏极的扩散层形成区,第一沟槽型绝缘区和 第二沟槽型绝缘区域; 上电极与所述第一沟槽型绝缘区域接触并形成在所述下电极上,其间插入有所述第一绝缘膜; 以及栅极电极,与第二沟槽型绝缘区域接触并且形成在与其间插入第二绝缘膜的沟道区域上,其中下部电极形成区域的端部的至少一部分的形状与 第一绝缘膜比与第二绝缘膜接触的沟道区域的端部的形状更尖锐。

    Spongy sintered article of titanium or titanium alloy exhibiting excellent compression strength
    36.
    发明授权
    Spongy sintered article of titanium or titanium alloy exhibiting excellent compression strength 有权
    表现出优异的抗压强度的钛或钛合金海绵状烧结体

    公开(公告)号:US07771506B2

    公开(公告)日:2010-08-10

    申请号:US11718351

    申请日:2005-11-14

    IPC分类号: B22F3/00

    摘要: A spongy sintered article of titanium or titanium alloy having a three-dimensional network structure in which continuous pores opening to a surface and continuing with internal pores are formed, and having a porosity of 50 to 98%, the spongy sintered article having a composition consisting of 0.1 to 0.6% by mass of carbon and a remainder containing titanium and inevitable impurities, the inevitable impurities having an oxygen content limited to not more than 0.6% by mass, and the spongy sintered article exhibiting an excellent compression strength.

    摘要翻译: 一种钛或钛合金的海绵状烧结体,其具有三维网状结构,其中形成连续的孔,并连续内孔,孔隙率为50〜98%,海绵状烧结体的组成为 0.1〜0.6质量%的碳,余量为钛和不可避免的杂质,氧含量限制在0.6质量%以下的不可避免的杂质,海绵状烧结体的抗压强度优异。

    OTP memory cell, OTP memory, and method of manufacturing OTP memory cell
    39.
    发明申请
    OTP memory cell, OTP memory, and method of manufacturing OTP memory cell 失效
    OTP存储单元,OTP存储器以及制造OTP存储单元的方法

    公开(公告)号:US20080283931A1

    公开(公告)日:2008-11-20

    申请号:US12153250

    申请日:2008-05-15

    申请人: Masahiro Wada

    发明人: Masahiro Wada

    IPC分类号: H01L27/112

    摘要: An OTP memory cell according to the present invention includes: a semiconductor substrate including a lower electrode forming region having a lower electrode formed therein, a diffusion layer forming region having a source and a drain formed therein, a first trench-type insulating region, and a second trench-type insulating region; an upper electrode being in contact with the first trench-type insulating region and formed on the lower electrode with the first insulating film interposed therebetween; and a gate electrode being in contact with the second trench-type insulating region and formed on a channel region with the second insulating film interposed therebetween, in which a shape of at least a part of an end of the lower electrode forming region in contact with the first insulating film is sharper than a shape of an end of the channel region in contact with the second insulating film.

    摘要翻译: 根据本发明的OTP存储单元包括:半导体衬底,包括形成有下电极的下电极形成区,形成有源极和漏极的扩散层形成区,第一沟槽型绝缘区和 第二沟槽型绝缘区域; 上电极与所述第一沟槽型绝缘区域接触并形成在所述下电极上,其间插入有所述第一绝缘膜; 以及栅极电极,与第二沟槽型绝缘区域接触并且形成在与其间插入第二绝缘膜的沟道区域上,其中下部电极形成区域的端部的至少一部分的形状与 第一绝缘膜比与第二绝缘膜接触的沟道区域的端部的形状更尖锐。

    Quantization control system for video coding
    40.
    发明授权
    Quantization control system for video coding 有权
    视频编码量化控制系统

    公开(公告)号:US07436890B2

    公开(公告)日:2008-10-14

    申请号:US10392392

    申请日:2003-03-20

    IPC分类号: H04N7/18

    摘要: The present invention provides a quantization control system for video coding, for optimizing bit allocation based on visual priority which expresses at high precision human visual characteristics for videos, thereby improving subjective image quality of the whole image even with a limited number of bits. An object is extracted from a picture of an input image (S1) and a gaze parameter V(j) for the extracted object is calculated (S2). Then, a texture attribute parameter t(k) of each macroblock included in the object is calculated (S3). The gaze parameter V(j) and texture attribute parameter t(k) are used to calculate a visual priority parameter w(k) for each macroblock. Based on this parameter w(k), a quantization parameter is determined.

    摘要翻译: 本发明提供了一种用于视频编码的量化控制系统,用于基于视觉优先级优化比特分配,其以高精度的人视觉特征表示视频,从而即使在有限位数的情况下也能提高整个图像的主观图像质量。 从输入图像的图像中提取对象(S 1),并计算提取对象的注视参数V(j)(S 2)。 然后,计算包含在对象中的每个宏块的纹理属性参数t(k)(S 3)。 注视参数V(j)和纹理属性参数t(k)用于计算每个宏块的视觉优先级参数w(k)。 基于该参数w(k),确定量化参数。