摘要:
A CCD image sensing device has vertical shift registers (22), a horizontal shift register (3A), a horizontal transfer gate (4), a horizontal shift register (3B), a smear gate (6), a smear drain region (7) and a channel stop region (8) arranged in that order on an n-type substrate (N-Sub). A p-well region underlying the vertical shift registers (22), the horizontal shift register (3A), the horizontal transfer gate (4), the horizontal shift register (3B) the smear gate (6), the smear drain region (7) and the channel stop region (8) is doped in a high impurity concentration to stabilize the potential of the p-well region at a potential substantially equal to that of the channel stop region (8), i.e., ground potential (GND). Consequently, no hole storage region is formed in the p-well and hence the deterioration of the signal transfer performance can be prevented. Since no hole-depletion region is created, no dark current due to avalanche is produced.
摘要:
A solid-state charge-coupled-device imager has an imaging region composed of a matrix of vertically and horizontally arrayed photosensitive areas for storing signal charges depending on the intensity of applied light, and a plurality of vertical shift resisters for vertically transferring the signal charges shifted from the photosensitive areas. The signal charges from the vertical shift registers are shifted to a horizontal shift register that transfers the signal charges in a horizontal direction. The horizontal shift register comprises a plurality of charge transfer electrodes horizontally spaced at predetermined intervals. The charge transfer electrodes are inclined to the horizontal direction. The charge transfer electrodes may be inclined linearly in their entirety to the horizontal direction or may be of a chevron shape.
摘要:
A solid state image pick-up device includes means for cancelling a difference in impedance between photo-sensing areas in a photo-sensitive array. The impedance difference cancelling means cancels or makes the difference of impedance at each photo-sensing area ignorable to unify the charge handling in respective photo-sensing areas. In practice, the impedance difference cancelling means provides a resistance high enough to make the impedance difference between respective photo-sensing areas ignorable.
摘要:
The present invention has an object of providing a method of driving a solid-state imaging device which can reduce reading voltage even when transfer electrodes adjacent to reading electrodes are smaller than the reading electrodes as a result of miniaturization of pixels. The solid-state imaging device includes photodiodes and vertical CCDs each including transfer electrodes. The method includes: reading signal charges from the photodiodes by setting the electric potential of a predetermined transfer electrode among the reading electrodes to the electric potential VH; transferring the read signal charges in a column direction by applying driving pulses having electric potentials VM and VL to the transfer electrodes. Each of the reading electrodes has a larger area than the adjacent transfer electrodes. In reading the signal charges, while the electric potential VH is being applied, the electric potential of one of the transfer electrodes adjacent to the predetermined reading electrode is set to the electric potential VM, and the electric potentials of the other one of the transfer electrodes adjacent to the predetermined reading electrode and a reading electrode other than the predetermined electrode are changed.
摘要:
Light-splitting elements are arranged in at least two columns and two rows to form two pairs 1a, 1b and 1c, 1d. Each element splits incident light into light rays and makes them fall on a portion of a photosensing section right under itself and an adjacent photosensitive cell. The element 1a splits the incident light so that a primary color ray C1 and its complementary color ray C1′ enter an adjacent cell 2b and an underlying cell 2a, respectively. The element 1b makes a primary color ray C2 and its complementary color ray C2′ enter an underlying cell 2a and an adjacent cell 2a, respectively. The element 1c does the same as the element 1b. And the element 1d makes a primary color ray C3 and its complementary color ray C3′ enter an adjacent cell 2c and an underlying cell 2d, respectively. These photosensitive cells 2 perform photoelectric conversion, thereby outputting an electrical signal representing the intensity of the incident light. By carrying out simple calculations between the outputs of these cells, a color signal and a luminance signal are generated.
摘要:
Provided is a solid-state imaging device including a plurality of vertical transfer units (VCCDs), a horizontal transfer unit (HCCD) and a driving unit. In a vertical final stage of the VCCDs, there are same transfer electrode structures in every m columns, where m is equal to or more than 2, the vertical final stage being a vertical transfer stage located the closest to the HCCD, in each vertical final stage of columns except one column among the m columns or of all columns among the m columns, there are transfer electrodes independent from electrodes in the other columns in the m columns, and the independent transfer electrodes are driven independently to perform transfer processing from the corresponding vertical final stage to the HCCD, the driving being independent from driving for the electrodes in the other columns in the m columns, and the driving unit performs sequential vertical transfer driving, by which first packets and second packets are sequentially and vertically transferred within one horizontal transfer period, the first packet including a signal component to be used as an image signal and the second packet not including any signal component to be used as an image signal, and to apply, in the sequential vertical transfer driving, respective transfer pulses to the transfer electrodes in the vertical transfer stage and transfer electrodes of the HCCD, so that the first packets and the second packets are separated to be allocated into respective different horizontal transfer stages of the HCCD.
摘要:
A pixel operable within a photographing device includes a light receiving portion for generating an electric signal corresponding to an intensity of received light, an amplifying portion for amplifying an output signal of the light receiving portion, a number of storing portions for storing, as a current signal, an electric signal amplified by the amplifying portion, a load portion for converting current outputs of the number of storing portions into voltages, a bias portion for supplying an offset current to an input of the load portion, and a calculating portion for calculating an output of the load portion, wherein a number of the pixels are arranged in a matrix. The storing portions and the photographing device are disposed on the same circuit, thereby expediting pixel processing. Additionally, with a bias, the output becomes stable.
摘要:
A solid-state imaging apparatus which prevents fixed pattern noise from occurring is provided, the fixed pattern noise having a correlation in a column direction (or a row direction) caused by non-uniformity of a sampling circuit itself. The solid state imaging apparatus comprises a sampling circuit in which a signal from a photodiode PD is sampled. And, the sampling circuit includes: a sampling capacitor CSH for holding the signal from the photodiode PD; a sampling MOS switch M12 which (i) transmits the signal from the photodiode PD to the sampling capacitor CSH, or (ii) blocks the transmission; and a damping capacitor CDS connected to (i) one of a source electrode and a drain electrode of the sampling MOS switch M12 which is located closer to the sampling capacitor CSH and (ii) a gate electrode of the sampling MOS switch M12.
摘要:
The method for manufacturing a camera module of the present invention includes forming a bump on each electrode portion of an imaging element. Next, a through hole is formed in a substrate. The imaging element is then mounted on a first side of the substrate having at least one bump such that a light receiving portion of the imaging element receives light via the through-hole of the substrate. A periphery of the imaging element is sealed to the substrate. Next, a lens unit is mounted on a second side of the substrate.
摘要:
An amplifier type solid-state imaging device is operated in a capacitor load operation system. This solid-state imaging device is made high in reliability and an arrangement of the horizontal output circuit portion is simplified. The solid-state imaging device includes a plurality of pixel MOS transistors each of which is connected between a voltage source (V.sub.DD) and a vertical signal line, a control electrode thereof being connected to a scanning line and charges generated by photoelectric conversion being accumulated near the channel thereof, a load capacitor element connected between the vertical signal line and a first potential, and a reset MOS switch for resetting the load capacitor element to a reset potential. A potential of the vertical signal line is also reset. When a signal is read out, the potential of the load capacitor element is set to substantially the same potential as the channel potential of the pixel MOS transistor. The capacitance of the load capacitor element is set to be larger than the capacitance of the vertical signal line. The reset potential is set to be shallower than the channel potential obtained in the pixel MOS transistor when no light is incident on the pixel MOS transistor, and a potential difference between it and a channel potential obtained when no light is incident on the pixel MOS transistor is set so as to fall within 2.0 V.