POWER SUPPLY DEVICE AND ELECTRONIC DEVICE COMPRISING SAME

    公开(公告)号:US20230152874A1

    公开(公告)日:2023-05-18

    申请号:US18096993

    申请日:2023-01-13

    摘要: An electronic device comprising: a power supply apparatus including a first converter configured to generate driving power and a second converter configured to generate first standby voltage and second standby voltage; and a main body operated based on the driving power and the second standby power received from the power supply apparatus. The second converter is configured to: during a normal mode operation and a standby mode operation, obtain the first standby voltage and adjust the first standby power based on the obtained standby power; and during the standby mode operation, obtain the second standby voltage; and in response to the obtained second standby voltage being equal to or less than a reference level, perform the normal mode operation to control the first standby voltage to be maintained at a first voltage level and control the second standby voltage to be maintained at a second voltage level.

    Semiconductor package
    35.
    发明授权

    公开(公告)号:US11527509B2

    公开(公告)日:2022-12-13

    申请号:US17364541

    申请日:2021-06-30

    摘要: A semiconductor package including a first semiconductor chip including a first semiconductor layer having a first forward surface having a first integrated circuit thereon and a first rear surface and a plurality of first through vias electrically connected to the first integrated circuit and including at least first and second groups of first through vias, a second semiconductor chip including a second integrated circuit electrically connected to the first group of first through vias, and a third semiconductor chip including third through vias electrically connected to the second group of first through vias, wherein the first group of first through vias transfer input/output signals of the first integrated circuit, and the second group of first through vias transfer power to the first integrated circuit, may be provided.

    Audio output device and method for controlling output speed of audio data thereof

    公开(公告)号:US11487497B2

    公开(公告)日:2022-11-01

    申请号:US17148694

    申请日:2021-01-14

    IPC分类号: G06F3/16

    摘要: An audio output device according to an embodiment may include: a short-range communication module configured to perform short-range wireless communication; a memory configured to buffer audio data received from an external electronic device through the short-range communication module; an audio output unit configured to output the audio data; and a processor. The processor may be configured to: receive operation mode information related to a function being executed in the external electronic device from the external electronic device through the short-range communication module; configure a reference period corresponding to an amount of the audio data buffered in the memory based on the operation mode information; and determine a playback speed of the audio data to be output through the audio output unit by comparing the amount of the buffered audio data with the configured reference period. In addition, various other embodiments may be possible.

    EXTREME ULTRAVIOLET LIGHT SOURCE SYSTEMS

    公开(公告)号:US20220104336A1

    公开(公告)日:2022-03-31

    申请号:US17325327

    申请日:2021-05-20

    IPC分类号: H05G2/00 G03F7/20

    摘要: Extreme ultraviolet light source systems may include a chamber including a condensing mirror and having an intermediate focus, by which extreme ultraviolet light reflected from the condensing mirror is emitted along a first optical path, a blocking plate that may be on the chamber so as to intersect the first optical path and may include an opening through which the extreme ultraviolet light is emitted, a transparent cover on the blocking plate so as to cover the opening, a nozzle that may be between the chamber and the blocking plate so that an end portion faces the intermediate focus and may spray a first gas in a direction intersecting the first optical path, and an exhaust pipe between the chamber and the blocking plate so as to face the end portion of the nozzle.

    SEMICONDUCTOR DEVICE HAVING GATE ELECTRODE AND ELECTRONIC SYSTEM INCLUDING THE SAME

    公开(公告)号:US20220085047A1

    公开(公告)日:2022-03-17

    申请号:US17224695

    申请日:2021-04-07

    发明人: Sanghoon Lee

    摘要: A semiconductor device includes a substrate having a first area and a second area and an active area limited by an isolation layer in the first area and the second area, a p-type gate electrode doped with p-type impurities and including a p-type lower gate layer and a p-type upper gate layer on the p-type lower gate layer with a first gate dielectric layer disposed between the active area and the p-type gate electrode in the first area, and an n-type gate electrode doped with n-type impurities and including an n-type lower gate layer and an n-type upper gate layer on the n-type lower gate layer with a second gate dielectric layer disposed between the active area and the n-type gate electrode in the second area.

    DISPLAY APPARATUS AND DISPLAY CONTROL METHOD

    公开(公告)号:US20210149195A1

    公开(公告)日:2021-05-20

    申请号:US17095872

    申请日:2020-11-12

    IPC分类号: G02B27/01 G02B17/00 G02B5/10

    摘要: A display apparatus and a display control method are provided. The display apparatus includes: an image source configured to output a first image; a relay optics component configured to change a size of the first image and to transfer the first image; a surrounding structure provided around the image source or the relay optics component, and including a second image of a surrounding object; and a combiner configured to form a first virtual image by reflecting the first image, and to form a second virtual image around the first virtual image by reflecting the second image.

    SEMICONDUCTOR DEVICES
    40.
    发明申请

    公开(公告)号:US20200381555A1

    公开(公告)日:2020-12-03

    申请号:US16815744

    申请日:2020-03-11

    摘要: Semiconductor devices are provided. A semiconductor device includes a fin structure having a plurality of first semiconductor patterns and a plurality of second semiconductor patterns alternately stacked on a substrate, and extending in a first direction. The semiconductor device includes a semiconductor cap layer on an upper surface of the fin structure, and extending along opposite side surfaces of the fin structure in a second direction crossing the first direction. The semiconductor device includes a gate electrode on the semiconductor cap layer, and extending in the second direction. The semiconductor device includes a gate insulating film between the semiconductor cap layer and the gate electrode. Moreover, the semiconductor device includes a source/drain region connected to the fin structure. The plurality of first semiconductor patterns include silicon germanium (SiGe) having a germanium (Ge) content in a range of 25% to 35%, and the plurality of second semiconductor patterns include silicon (Si).