公开(公告)号：US20250113716A1

公开(公告)日：2025-04-03

申请号：US18728173

申请日：2023-01-11

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Yasuharu HOSAKA ,  Yukinori SHIMA ,  Masami JINTYOU ,  Masataka NAKADA ,  Junichi KOEZUKA ,  Kenichi OKAZAKI

IPC: H10K59/131 ,  H10K59/12

Abstract: A semiconductor device including a miniaturized transistor is provided. The semiconductor device includes a semiconductor layer, a first conductive layer, a second conductive layer, a third conductive layer, a first insulating layer, and a second insulating layer. The first insulating layer is provided over the first conductive layer and includes a first opening reaching the first conductive layer. The second conductive layer is provided over the first insulating layer and includes a second opening in a region overlapping with the first opening. The semiconductor layer is in contact with a top surface of the first conductive layer, a side surface of the first insulating layer, and a top surface and a side surface of the second conductive layer. The second insulating layer is provided over the semiconductor layer. The third conductive layer is provided over the second insulating layer. The first insulating layer has a stacked-layer structure of a third insulating layer and a fourth insulating layer over the third insulating layer. The fourth insulating layer includes a region having a higher film density than the third insulating layer.

公开(公告)号：US20240079502A1

公开(公告)日：2024-03-07

申请号：US18505562

申请日：2023-11-09

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Junichi KOEZUKA ,  Kenichi OKAZAKI ,  Yukinori SHIMA ,  Yasutaka NAKAZAWA ,  Yasuharu HOSAKA ,  Shunpei YAMAZAKI

IPC: H01L29/786 ,  G06F3/041 ,  G06F3/044 ,  H01L21/02 ,  H01L27/02 ,  H01L27/12 ,  H01L29/24 ,  H01L29/66

CPC classification number: H01L29/78696 ,  G06F3/0412 ,  G06F3/044 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02631 ,  H01L27/0296 ,  H01L27/1225 ,  H01L27/1259 ,  H01L27/127 ,  H01L29/24 ,  H01L29/66969 ,  H01L29/78606 ,  H01L29/78648 ,  H01L29/7869 ,  G02F1/1368

Abstract: A semiconductor device with favorable electrical characteristics is to be provided. A highly reliable semiconductor device is to be provided. A semiconductor device with lower power consumption is to be provided. The semiconductor device includes a gate electrode, a first insulating layer over the gate electrode, a metal oxide layer over the first insulating layer, a pair of electrodes over the metal oxide layer, and a second insulating layer over the pair of electrodes. The first insulating layer includes a first region and a second region. The first region has a region being in contact with the metal oxide layer and containing more oxygen than the second region. The second region has a region containing more nitrogen than the first region. The metal oxide layer has at least a concentration gradient of oxygen in a thickness direction, and the concentration gradient becomes high on a first region side and on a second region side.

公开(公告)号：US20230320135A1

公开(公告)日：2023-10-05

申请号：US18127198

申请日：2023-03-28

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Yasuharu HOSAKA ,  Masami JINTYOU ,  Takahiro IGUCHI ,  Chieko MISAMA ,  Ami SATO ,  Masayoshi DOBASHI

IPC: H10K59/121 ,  H10K59/12

CPC classification number: H10K59/1213 ,  H10K59/1201

Abstract: Provided is a semiconductor device having a high degree of integration, which includes first and second transistors and a first insulating layer. The first transistor includes a first semiconductor layer, a second insulating layer, and first to third conductive layers. The second transistor includes a second semiconductor layer, a third insulating layer, and fourth to sixth conductive layers. The first insulating layer includes a region in contact with the first semiconductor layer and the first conductive layer and includes an opening reaching the first conductive layer. The first semiconductor layer is in contact with a top surface of the first conductive layer, an inner wall of the opening, and the second conductive layer. The second conductive layer is positioned over the first insulating layer. The third conductive layer is positioned over the first semiconductor layer and includes a region overlapping with the inner wall of the opening with the second insulating layer positioned therebetween. The second semiconductor layer is positioned over the first insulating layer and in contact with side and top surfaces of a side end portion of the fourth conductive layer and side and top surfaces of a side end portion of the fifth conductive layer; the side end portions face each other. The sixth conductive layer is positioned over the second semiconductor layer with the third insulating layer positioned therebetween. The first transistor is electrically connected to the second transistor.

公开(公告)号：US20220359575A1

公开(公告)日：2022-11-10

申请号：US17861430

申请日：2022-07-11

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Masashi OOTA ,  Noritaka ISHIHARA ,  Motoki NAKASHIMA ,  Yoichi KUROSAWA ,  Shunpei YAMAZAKI ,  Yasuharu HOSAKA ,  Toshimitsu OBONAI ,  Junichi KOEZUKA

IPC: H01L27/12 ,  H01L21/02 ,  H01L49/02 ,  H01L29/66 ,  H01L29/786 ,  H01L21/425 ,  H01L21/477

Abstract: To provide a method for manufacturing a semiconductor device including an oxide semiconductor film having conductivity, or a method for manufacturing a semiconductor device including an oxide semiconductor film having a light-transmitting property and conductivity. The method for manufacturing a semiconductor device includes the steps of forming an oxide semiconductor film over a first insulating film, performing first heat treatment in an atmosphere where oxygen contained in the oxide semiconductor film is released, and performing second heat treatment in a hydrogen-containing atmosphere, so that an oxide semiconductor film having conductivity is formed.

公开(公告)号：US20220319866A1

公开(公告)日：2022-10-06

申请号：US17843083

申请日：2022-06-17

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Masami JINTYOU ,  Junichi KOEZUKA ,  Takashi HAMOCHI ,  Yasuharu HOSAKA

IPC: H01L21/385 ,  H01L21/02 ,  H01L21/44 ,  H01L21/443 ,  H01L21/4757 ,  H01L29/04 ,  H01L29/49 ,  H01L29/66 ,  H01L29/786

Abstract: The field-effect mobility and reliability of a transistor including an oxide semiconductor film are improved. Provided is a semiconductor device including an oxide semiconductor film. The semiconductor device includes a first insulating film, an oxide semiconductor film over the first insulating film, a second insulating film and a third insulating film over the oxide semiconductor film, and a gate electrode over the second insulating film. The second insulating film comprises a silicon oxynitride film. When excess oxygen is added to the second insulating film by oxygen plasma treatment, oxygen can be efficiently supplied to the oxide semiconductor film.

公开(公告)号：US20220216243A1

公开(公告)日：2022-07-07

申请号：US17701961

申请日：2022-03-23

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Yasuharu HOSAKA ,  Satoru IDOJIRI ,  Kenichi OKAZAKI ,  Hiroki ADACHI ,  Daisuke KUBOTA

IPC: H01L27/12 ,  H01L21/683 ,  H01L29/66 ,  H01L29/786

Abstract: A peeling method at low cost with high mass productivity is provided. A resin layer having a thickness greater than or equal to 0.1 μm and less than or equal to 3 μm is formed over a formation substrate using a photosensitive and thermosetting material, a transistor including an oxide semiconductor in a channel formation region is formed over the resin layer, the resin layer is irradiated with light using a linear laser device, and the transistor and the formation substrate are separated from each other. A first region and a second region which is thinner than the first region or an opening can be formed in the resin layer. In the case of forming a conductive layer functioning as an external connection terminal or the like to overlap with the second region or the opening of the resin layer, the conductive layer is exposed.

公开(公告)号：US20220187645A1

公开(公告)日：2022-06-16

申请号：US17562070

申请日：2021-12-27

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Yasuharu HOSAKA ,  Yukinori SHIMA ,  Kenichi OKAZAKI ,  Shunpei YAMAZAKI

IPC: G02F1/1368 ,  G02F1/1333 ,  G02F1/1362 ,  H01L27/12 ,  G02F1/1345 ,  G02F1/1335 ,  G02F1/1337

Abstract: The display device includes a first substrate provided with a driver circuit region that is located outside and adjacent to a pixel region and includes at least one second transistor which supplies a signal to the first transistor in each of the pixels in the pixel region, a second substrate facing the first substrate, a liquid crystal layer between the first substrate and the second substrate, a first interlayer insulating film including an inorganic insulating material over the first transistor and the second transistor, a second interlayer insulating film including an organic insulating material over the first interlayer insulating film, and a third interlayer insulating film including an inorganic insulating material over the second interlayer insulating film. The third interlayer insulating film is provided in part of an upper region of the pixel region, and has an edge portion on an inner side than the driver circuit region.

公开(公告)号：US20220149205A1

公开(公告)日：2022-05-12

申请号：US17585645

申请日：2022-01-27

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Yasuharu HOSAKA ,  Yukinori SHIMA ,  Masataka NAKADA ,  Masami JINTYOU

IPC: H01L29/786 ,  H01L29/423 ,  H01L29/49 ,  H01L29/66 ,  H01L29/04

Abstract: In a transistor that includes an oxide semiconductor, a change in electrical characteristics is suppressed and the reliability is improved.
A semiconductor device that includes a transistor is provided. The transistor includes a first conductive film that functions as a first gate electrode, a first gate insulating film, a first oxide semiconductor film that includes a channel region, a second gate insulating film, and a second oxide semiconductor film and a second conductive film that function as a second gate electrode. The second oxide semiconductor film includes a region higher in carrier density than the first oxide semiconductor film. The second conductive film includes a region in contact with the first conductive film.

公开(公告)号：US20200343347A1

公开(公告)日：2020-10-29

申请号：US16926861

申请日：2020-07-13

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Yasuharu HOSAKA ,  Yukinori SHIMA ,  Junichi KOEZUKA ,  Kenichi OKAZAKI

IPC: H01L29/24 ,  H01L29/06 ,  H01L29/10 ,  H01L29/786 ,  H01L29/49 ,  H01L29/423

Abstract: A novel material is provided. A composite oxide semiconductor includes a first region and a second region. The first region contains indium. The second region contains an element M (the element M is one or more of Ga, Al, Hf, Y, and Sn). The first region and the second region are arranged in a mosaic pattern. The composite oxide semiconductor further includes a third region. The element M is gallium. The first region contains indium oxide or indium zinc oxide. The second region contains gallium oxide or gallium zinc oxide. The third region contains zinc oxide.

公开(公告)号：US20180182870A1

公开(公告)日：2018-06-28

申请号：US15846657

申请日：2017-12-19

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Yasuharu HOSAKA ,  Takahiro IGUCHI ,  Masami JINTYOU ,  Takashi HAMOCHI ,  Junichi KOEZUKA

IPC: H01L29/66 ,  H01L29/786 ,  H01L21/4757 ,  H01L21/4763 ,  H01L21/385

Abstract: To provide a semiconductor device with favorable electrical characteristics. To provide a method for manufacturing a semiconductor device with high productivity. To reduce the temperatures in a manufacturing process of a semiconductor device. An island-like oxide semiconductor layer is formed over a first insulating film; a second insulating film and a first conductive film are formed in this order, covering the oxide semiconductor layer; oxygen is supplied to the second insulating film through the first conductive film; a metal oxide film is formed over the second insulating film in an atmosphere containing oxygen; a first gate electrode is formed by processing the metal oxide film; a third insulating film is formed, covering the first gate electrode and the second insulating film; and first heat treatment is performed. The second insulating film and the third insulating film each include oxide. The highest temperature in the above steps is 340° C. or lower.