公开(公告)号：US20230044446A1

公开(公告)日：2023-02-09

申请号：US17964056

申请日：2022-10-12

Applicant: Seoul Viosys Co., Ltd.

Inventor： Seong Kyu Jang ,  Hong Suk Cho ,  Kyu Ho Lee ,  Chi Hyun In

IPC: H01L33/02 ,  H01L33/38 ,  H01L33/62 ,  H01L33/44 ,  H01L33/48 ,  H01L23/00 ,  H01L33/46

Abstract: A light emitting device including a substrate, a first conductivity-type semiconductor layer, a mesa including a second conductivity-type semiconductor layer and an active layer, first and second contact electrodes respectively contacting the first and second conductivity-type semiconductor layers, a passivation layer covering the first and second contact electrodes, the mesa, and including first and second openings, and first and second bump electrodes electrically connected to the first and second contact electrodes through the first and second openings, respectively, in which the first and second bump electrodes are disposed on the mesa, the passivation layer is disposed between the first bump electrode and the second contact electrode, the first contact electrode includes a reflective material, and a portion of the first opening is surrounded with a side surface of the mesa, and another portion of the first opening is not surrounded with the side surface of the mesa.

公开(公告)号：US11362073B2

公开(公告)日：2022-06-14

申请号：US16782594

申请日：2020-02-05

Applicant: SEOUL VIOSYS CO., LTD.

Inventor： Seom Geun Lee ,  Chan Seob Shin ,  Ho Joon Lee ,  Seong Kyu Jang

IPC: H01L25/13 ,  H01L33/62 ,  H01L33/42 ,  H01L33/08

Abstract: A light emitting device for a display including first, second, and third LED stacks each including a first semiconductor layer, an active layer, and a second semiconductor layer, first, second, and third transparent electrodes in ohmic contact with a lower surface of the first LED stack, an upper surface of the second LED stack, and an upper surface of the third LED stack, respectively, a first electrode pad disposed on the first semiconductor layer of the third LED stack, a lower second electrode pad disposed on the third transparent electrode, and first, second, and third bump pads disposed on the first LED stack and electrically connected to the LED stacks, respectively, and a common bump pad disposed electrically connected to each LED stack, in which an upper surface of the first electrode pad is located at substantially the same elevation as that of the lower second electrode pad.

公开(公告)号：US11211528B2

公开(公告)日：2021-12-28

申请号：US16815823

申请日：2020-03-11

Applicant: SEOUL VIOSYS CO., LTD.

Inventor： Seong Kyu Jang ,  Chan Seob Shin ,  Seom Geun Lee ,  Ho Joon Lee

IPC: H01L33/24 ,  H01L33/62 ,  H01L25/075 ,  G02B27/01 ,  G06F1/16

Abstract: A light emitting device for a display including first, second, and third LED stacks, and bump pads disposed on the first LED stack, in which each LED stack includes a first semiconductor layer and a second semiconductor layer exposing a portion of the first semiconductor layer, the first LED stack includes upper through-holes and the second LED stack includes lower through-holes, the bump pads include a first bump pad electrically connected to the second semiconductor layer of the first LED stack, a second bump pad electrically connected to the second semiconductor layer of the second LED stack through the upper through-hole, a third bump pad electrically connected to the second semiconductor layer of the third LED stack through the upper through-hole and the lower through-hole, and a common bump pad electrically connected to the first semiconductor layers of each LED stack in common.

公开(公告)号：US10763392B2

公开(公告)日：2020-09-01

申请号：US16745758

申请日：2020-01-17

Applicant: Seoul Viosys Co., Ltd.

Inventor： Seong Kyu Jang ,  Hong Suk Cho ,  Kyu Ho Lee ,  Chi Hyun In

IPC: H01L33/08 ,  H01L33/02 ,  H01L33/46 ,  H01L23/00 ,  H01L33/48 ,  H01L33/44 ,  H01L33/62 ,  H01L33/38 ,  H01L33/40

Abstract: A light emitting device including a substrate, a first semiconductor layer, a mesa disposed thereon and including a second semiconductor layer and an active layer, a first contact electrode contacting the first semiconductor layer exposed around the mesa, a second contact electrode contacting the second semiconductor layer, a passivation layer covering the first contact electrode, the mesa, and the second contact electrode and having openings disposed on the first and second contact electrodes, and first and second bump electrodes electrically connected to the first and second contact electrodes through the openings, respectively, in which the mesa has indentations in plan view, the first contact electrode is spaced apart from the mesa by a predetermined distance, surrounds the mesa, and contacts the first semiconductor layer in the indentations, and each of the first and second bump electrodes covers one of the openings of the passivation layer and a portion thereof.

公开(公告)号：US20180323343A1

公开(公告)日：2018-11-08

申请号：US15969723

申请日：2018-05-02

Applicant: SEOUL VIOSYS CO., LTD.

Inventor： Seong Kyu Jang ,  Ji Hyeon Jeong ,  Kyu Ho Lee ,  Joon Hee Lee

IPC: H01L33/38 ,  H01L33/40 ,  H01L33/62 ,  H01L27/15 ,  H01L33/44 ,  H01L33/32 ,  H01L33/20 ,  H01L33/00

CPC classification number: H01L33/38 ,  H01L27/156 ,  H01L33/0025 ,  H01L33/06 ,  H01L33/08 ,  H01L33/145 ,  H01L33/20 ,  H01L33/32 ,  H01L33/387 ,  H01L33/405 ,  H01L33/44 ,  H01L33/62

Abstract: An ultraviolet light emitting diode is provided to comprise an n-type semiconductor layer disposed on a substrate; light emitting elements disposed on the n-type semiconductor layer, each comprising an active layer and a p-type semiconductor layer; an n-type ohmic contact layer contacting the n-type semiconductor layer around the micro light emitting elements; p-type ohmic contact layers contacting the p-type semiconductor layers, respectively; an n-bump electrically connecting to the n-type ohmic contact layer; and a p-bump electrically connected to the p-type ohmic contact layers, wherein each of the n-bump and the p-bump is disposed across over a plurality of micro light emitting elements. The micro light emitting elements may be arranged over a wide area of the substrate, and thus light output can be improved and a forward voltage may be lowered, in addition, the n-bump and the p-bump may be formed relatively widely.