公开(公告)号：US20150179520A1

公开(公告)日：2015-06-25

申请号：US14416895

申请日：2013-07-08

Applicant: Soitec

Inventor： Mariam Sadaka ,  Bernard Aspar ,  Chrystelle Lagahe Blanchard

IPC: H01L21/78 ,  H01L21/304 ,  H01L21/683 ,  H01L21/268

CPC classification number: H01L21/78 ,  H01L21/268 ,  H01L21/304 ,  H01L21/6835 ,  H01L21/7813 ,  H01L33/0079

Abstract: Methods of fabricating a semiconductor structure include bonding a carrier wafer over a substrate, removing at least a portion of the substrate, transmitting laser radiation through the carrier wafer and weakening a bond between the substrate and the carrier wafer, and separating the carrier wafer from the substrate. Other methods include forming circuits over a substrate, forming trenches in the substrate to define unsingulated semiconductor dies, bonding a carrier substrate over the unsingulated semiconductor dies, transmitting laser radiation through the carrier substrate and weakening a bond between the unsingulated semiconductor dies and the carrier substrate, and separating the carrier substrate from the unsingulated semiconductor dies. Some methods include thinning at least a portion of the substrate, leaving the plurality of unsingulated semiconductor dies bonded to the carrier substrate.

Abstract translation: 制造半导体结构的方法包括将载体晶片结合在衬底上，去除衬底的至少一部分，通过载体晶片传输激光辐射并削弱衬底和载体晶片之间的结合，并将载体晶片与 基质。 其他方法包括在衬底上形成电路，在衬底中形成沟槽以限定非引线半导体管芯，将载体衬底接合在非引线半导体管芯上方，将激光辐射传输通过载体衬底并削弱未加掩模的半导体管芯与载体衬底之间的接合 并且将载体衬底与未折叠的半导体管芯分离。 一些方法包括使衬底的至少一部分变薄，使得多个未折叠的半导体管芯接合到载体衬底。

公开(公告)号：US08866305B2

公开(公告)日：2014-10-21

申请号：US13937779

申请日：2013-07-09

Applicant: Soitec

Inventor： Mariam Sadaka ,  Ionut Radu

IPC: H01L23/538 ,  H01L21/768 ,  H01L23/00 ,  H01L21/20 ,  H01L25/00 ,  H01L27/06 ,  H01L21/683

CPC classification number: H01L23/5384 ,  H01L21/2007 ,  H01L21/6835 ,  H01L21/6836 ,  H01L21/76898 ,  H01L24/03 ,  H01L24/05 ,  H01L24/08 ,  H01L24/80 ,  H01L24/92 ,  H01L24/94 ,  H01L25/50 ,  H01L27/0688 ,  H01L2221/68327 ,  H01L2221/68363 ,  H01L2221/68368 ,  H01L2221/68381 ,  H01L2221/68386 ,  H01L2221/6839 ,  H01L2224/03462 ,  H01L2224/03464 ,  H01L2224/0361 ,  H01L2224/03616 ,  H01L2224/0362 ,  H01L2224/0381 ,  H01L2224/05009 ,  H01L2224/05647 ,  H01L2224/05687 ,  H01L2224/08146 ,  H01L2224/80006 ,  H01L2224/80065 ,  H01L2224/802 ,  H01L2224/80203 ,  H01L2224/80895 ,  H01L2224/80896 ,  H01L2224/94 ,  H01L2225/06513 ,  H01L2225/06541 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01023 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01051 ,  H01L2924/01072 ,  H01L2924/12042 ,  H01L2924/14 ,  H01L2224/80 ,  H01L2924/00

Abstract: Methods of forming bonded semiconductor structures include temporarily, directly bonding together semiconductor structures, thinning at least one of the semiconductor structures, and subsequently permanently bonding the thinned semiconductor structure to another semiconductor structure. The temporary, direct bond may be established without the use of an adhesive. Bonded semiconductor structures are fabricated in accordance with such methods.

Abstract translation: 形成键合的半导体结构的方法包括暂时将半导体结构直接结合在一起，使半导体结构中的至少一个变薄，然后将稀化的半导体结构永久地结合到另一个半导体结构。 可以在不使用粘合剂的情况下建立临时的直接粘合。 结合的半导体结构根据这样的方法制造。